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Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence.
- Source :
- MRS Online Proceedings Library; 2000, Vol. 610 Issue 1, p1-6, 6p
- Publication Year :
- 2000
Details
- Language :
- English
- ISSN :
- 19464274
- Volume :
- 610
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- MRS Online Proceedings Library
- Publication Type :
- Conference
- Accession number :
- 147384759
- Full Text :
- https://doi.org/10.1557/PROC-610-B4.10