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1. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

2. Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

3. Design Rules for High Performance Tunnel Transistors From 2-D Materials

4. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

5. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

7. Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation

8. Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

9. Doping profile engineered triple heterojunction TFETs with 12 nm body thickness

10. Switching Mechanism and the Scalability of Vertical-TFETs

11. Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

12. Universality of Short-Channel Effects on Ultrascaled MOSFET Performance

14. Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures

15. Effective work-function tuning of TiN/HfO2/SiO2 gate-stack; a density functional tight binding study

16. Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

17. Can Homojunction Tunnel FETs Scale Below 10 nm?

18. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

19. Channel thickness optimization for ultra thin and 2D chemically doped TFETs

20. Electrically Tunable Bandgaps in Bilayer MoS2

21. Design Guidelines for Sub-12 nm Nanowire MOSFETs

22. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

23. Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors

24. Understanding contact gating in Schottky barrier transistors from 2D channels

25. Gate tunable 2D WSe2 Esaki diode by SiNx doping

26. Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS

27. Sensitivity Challenge of Steep Transistors

28. WSe 2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

29. Efficient and realistic device modeling from atomic detail to the nanoscale

30. Multiscale transport simulation of nanoelectronic devices with NEMO5

31. Novel III-N heterostructure devices for low-power logic and more

32. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

33. Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

34. Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass

35. Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene

36. Design Rules for High Performance Tunnel Transistors from 2D Materials

37. Electrically Tunable Bandgaps in Bilayer MoS₂

38. From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling

39. Achieving a higher performance in bilayer graphene FET - strain engineering

40. Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs

41. Electrically doped 2D material tunnel transistor

42. Quantum dot lab: an online platform for quantum dot simulations

43. Electrically doped WTe2 tunnel transistors

44. Engineering the optical transitions of self-assembled quantum dots

45. Tunneling: The major issue in ultra-scaled MOSFETs

46. Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs

47. Dielectric Engineered Tunnel Field-Effect Transistor

48. A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations

49. Transport in vertically stacked hetero-structures from 2D materials

50. Brillouin zone unfolding method for effective phonon spectra

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