Electrically doped WTe2 tunnel transistors

Authors :: Hesameddin Ilatikhameneh
Joerg Appenzeller
Gerhard Klimeck
Rajib Rahman
Source :: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Publication Year :: 2015
Publisher :: IEEE, 2015.
Abstract: In this work, the performance of an electrically doped monolayer WTe 2 tunnel field-effect (TFET) transistor is investigated by means of full band quantum transport simulations. The atomistic simulations predict an ON-current above 100 uA/um and a SS below 10 mV/dec for a channel length of 13nm and V DD of 0.5V. The impact of the design parameters such as oxide thickness and dielectric constant is discussed in detail.

Subjects :: Work (thermodynamics)
Materials science
business.industry
Doping
Transistor
Oxide
Electrical engineering
Dielectric
law.invention
chemistry.chemical_compound
Quantum transport
chemistry
law
Logic gate
Monolayer
Optoelectronics
business

Database :: OpenAIRE
Journal :: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Accession number :: edsair.doi...........4e4c2ac8ab079db4f9916aae7c5f1ecb
Full Text :: https://doi.org/10.1109/sispad.2015.7292311