Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

Authors :: S. M. Sattari-Esfahlan
Hesameddin Ilatikhameneh
Javad Fouladi-Oskouei
Source :: Annalen der Physik. 533:2100121
Publication Year :: 2021
Publisher :: Wiley, 2021.

Subjects :: Materials science
Condensed matter physics
Modulation
Graphene
law
Tunnel diode
Resonant-tunneling diode
General Physics and Astronomy
Fermi energy
Double barrier
Differential (mathematics)
law.invention

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