Cite
Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode
MLA
S. M. Sattari-Esfahlan, et al. “Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling Diode.” Annalen Der Physik, vol. 533, Sept. 2021, p. 2100121. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........81eae3bbde6cc76b1fffafff627d6579&authtype=sso&custid=ns315887.
APA
S. M. Sattari-Esfahlan, Hesameddin Ilatikhameneh, & Javad Fouladi-Oskouei. (2021). Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode. Annalen Der Physik, 533, 2100121.
Chicago
S. M. Sattari-Esfahlan, Hesameddin Ilatikhameneh, and Javad Fouladi-Oskouei. 2021. “Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling Diode.” Annalen Der Physik 533 (September): 2100121. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........81eae3bbde6cc76b1fffafff627d6579&authtype=sso&custid=ns315887.