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Spin‐orbit coupling refers to the relativistic interaction between the spin and orbital motions of electrons. This interaction leads to numerous intriguing phenomena, including spin‐orbit torques, spin–momentum locking, topological spin textures, etc., that have recently gained prominence in the field of spin‐orbitronics. In particular, the emerging ferroelectric control is recognized and validated as an effective means to enhance energy efficiency across a broad spectrum of spin‐orbitronic devices. Here, cutting‐edge research on ferroelectric control of spin‐orbitronics (FECSO) by means of spontaneous polarization, reversible ferroelectric switching, and multiferroic coupling, are comprehensively reviewed. Two fascinating topics are mainly discussed: topological spin texture and spin‐charge interconversion. The classification of control mechanisms for different interactions in FECSO is summarized first. Then, from the perspective of material classification, the ferroelectric‐controlled spin‐orbit coupling with tunable topological spin texture in oxide systems, magnetic metal multilayers, and 2D van der Waals materials is reviewed. Subsequently, the ferroelectric‐tunable spin‐charge interconversion on heavy metal layers, oxide interfaces, and ferroelectric Rashba semiconductors is highlighted. In the end, the challenges and forthcoming prospects of FECSO are discussed. This work may provide pertinent and forward‐thinking guidance to accelerate the ongoing advancement of this field. [ABSTRACT FROM AUTHOR]

Spin Hall magnetoresistance (SMR) provides an effective tool to probe the spin structure in magnet/heavy metal bilayers. Here, we investigate the SMR in Gd3Fe5O12 (GdIG)/Pt bilayers, where GdIG is a compensated ferrimagnetic insulator. Under a finite magnetic field, GdIG has a collinear magnetic phase far away from compensated temperature (Tcomp) and noncollinear/canted magnetic phase around Tcomp of 278 K. A conventional SMR behavior is observed at different temperatures without any sign change around Tcomp. Meanwhile, an asymmetric behavior (unidirectional-like) exists in the observed SMR at the temperatures just above or below Tcomp, because of the contribution of the anisotropic magnetothermopower effect, i.e., spin Seebeck effect. The spin Seebeck effect component exhibits a sign change around Tcomp, which is correlated with the reversal of the sublattice magnetization. Our finding provides an insight into SMR and thermal spin transport in the GdIG/Pt bilayer structure. [ABSTRACT FROM AUTHOR]

SrRuO3 (SRO)-based heterostructures have attracted much attention for potential applications such as electrodes, oxide spintronics, topological electronics and electrocatalytic function mainly due to the strong spinâ€"orbit coupling, itinerant ferromagnetism with 4 d electrons, high metallic conductivity, perpendicular magnetic anisotropy and rich oxygen octahedral distortion of SRO. Here, this work aims to offer a timely and systematic review on SRO-based heterostructures for its emerging opportunities in oxide spintronic and topological electronic applications. We first present a brief summary of the current status in SRO-based heterostructures and describe the motivations of this review. We then briefly review the surface and interface modulation in SRO-based heterostructures, including oxygen octahedral distortions (antiferrodistortive mode and ferroelectric mode) engineering and ion defect engineering. In the third part, we discuss the spin-charge interconversion phenomena in SRO-based heterostructures, covering the inverse spin Hall effect and current-induced spin-orbit torques. Particularly, in the fourth part, we discuss the emergent topological Hall effect and underlying mechanism in SRO-based heterostructures, including the two-channel anomalous Hall effect and Berry phase manipulation. The fifth part presents the magnetic Weyl fermions and its electric-field control of SRO films. We finally conclude with a discussion of challenges and prospects of SRO-based heterostructures, which provides a guidance for exploring novel physical properties and designing multifunctional devices based on SRO. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) magnets provide an ideal platform to explore new physical phenomena in fundamental magnetism and to realize the miniaturization of magnetic devices. The study on its domain structure evolution with thickness is of great significance for better understanding the 2D magnetism. Here, we investigate the magnetization reversal and domain structure evolution in 2D ferromagnet Fe3GeTe2 (FGT) with a thickness range of 11.2–112 nm. Three types of domain structures and their corresponding hysteresis loops can be obtained. The magnetic domain varies from a circular domain via a dendritic domain to a labyrinthian domain with increasing FGT thickness, which is accompanied by a transition from squared to slanted hysteresis loops with reduced coercive fields. These features can be ascribed to the total energy changes from exchange interaction-dominated to dipolar interaction-dominated with increasing FGT thickness. Our finding not only enriches the fundamental magnetism, but also paves a way towards spintronics based on 2D magnet. [ABSTRACT FROM AUTHOR]

Metal–insulator transition (MIT) is generally thought to be difficult to alter once the material has been prepared. In this study, visible light is used to tune the resistance of NdNiO3 films, which are covered by granular CoFe2O4 capping, in an insulating state. With light illumination, the resistance of the NdNiO3 films is enhanced significantly at a low temperature of ≈9 K, which shows non‐volatile behavior. The magnitude of light‐induced resistance increase is dependent on the light wavelength and illumination time, irrespective of whether the time is consecutive or intermittent. Light control of the resistance can be ascribed to photon‐induced release of the monoclinic lattice of NdNiO3, which is clamped by granular CoFe2O4 capping before the light illumination. Our finding provides insight into the optical manipulation of physical properties on an interface and applications of this method in optoelectronics. [ABSTRACT FROM AUTHOR]

Abstract: The Cu47.5Zr47.5Al5 bulk metallic glass (BMG) and its composites have been synthesized by the copper-mold suction casting method and proper annealing treatment. The corrosion behaviors in seawater solution and mechanical properties of the BMG and its composites have been investigated by electrochemical polarization measurement, scanning electron microscopy and MTS Criterion testing machine. The results show that the as-cast BMG composite exhibits the higher corrosion potential and lower corrosion current density as well as distinct passive region. Combined with the corrosion morphologies, it suggests that the as-cast BMG composite has a higher corrosion resistance in seawater than the BMG and as-annealed composite, which is attributed to an appropriate amount of CuZr nanocrystals dispersing homogeneously in the glassy matrix. Compared to its composites, the Cu-based BMG with fully amorphous structure exhibits good ductility of ~1% plastic elongation and high compressive fracture strength of ~1843MPa. [Copyright &y& Elsevier]

Magnetotransport is at the center of spintronics. Mn3Sn single crystals, an antiferromagnet that has a noncollinear 120° spin order, exhibit large anomalous Hall effect (AHE) at room temperature. But such a behavior has remained elusive in epitaxial Mn3Sn films. Here the observation of AHE‐like behavior with in‐plane magnetic field up to room temperature in quasi‐epitaxial Mn3Sn thin films, prepared by magnetron sputtering, is reported. The growth of both (1120)‐ and (0001)‐oriented Mn3Sn films provides a unique opportunity for comparing AHE‐like behavior in three different measurement configurations. When the magnetic field is swept along (0001) plane, such as the direction of [0110] and [2110], the films show comparatively higher Hall conductivity than its perpendicular counterpart [0001], irrespective of their respectively orthogonal current along [0001] or [0110]. A quite weak ferromagnetic moment of ≈3 emu cm−3 is obtained in (1120)‐oriented Mn3Sn films, guaranteeing the switching of the Hall signals with magnetization reversal. This finding would advance the integration of Mn3Sn in antiferromagnetic spintronics. An anomalous Hall effect (AHE)‐like behavior is observed with an in‐plane magnetic field up to room temperature in 50 nm quasi‐epitaxial Mn3Sn thin films, prepared by magnetron sputtering. The observed AHE‐like signals in the Mn3Sn thin films stem from the chiral noncollinear 120° spin configuration of antiferromagnets rather than the direct magnetic moment change of ferromagnets. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) magnets provide an ideal platform to explore new physical phenomena in fundamental magnetism and to realize the miniaturization of magnetic devices. The study on its domain structure evolution with thickness is of great significance for better understanding the 2D magnetism. Here, we investigate the magnetization reversal and domain structure evolution in 2D ferromagnet Fe3GeTe2 (FGT) with a thickness range of 11.2–112 nm. Three types of domain structures and their corresponding hysteresis loops can be obtained. The magnetic domain varies from a circular domain via a dendritic domain to a labyrinthian domain with increasing FGT thickness, which is accompanied by a transition from squared to slanted hysteresis loops with reduced coercive fields. These features can be ascribed to the total energy changes from exchange interaction-dominated to dipolar interaction-dominated with increasing FGT thickness. Our finding not only enriches the fundamental magnetism, but also paves a way towards spintronics based on 2D magnet. [ABSTRACT FROM AUTHOR]