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Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics.
- Source :
- Advanced Materials; 3/5/2020, Vol. 32 Issue 9, p1-9, 9p
- Publication Year :
- 2020
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 32
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 142039507
- Full Text :
- https://doi.org/10.1002/adma.201906499