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Ferroelectric Control of Spin‐Orbitronics.

Authors :
Gu, Youdi
Zheng, Zhenyi
Jia, Lanxin
Shi, Shu
Zhao, Tieyang
Zeng, Tao
Zhang, Qihan
Zhu, Yao
Wang, Han
Chen, Jingsheng
Source :
Advanced Functional Materials. 10/8/2024, Vol. 34 Issue 41, p1-26. 26p.
Publication Year :
2024

Abstract

Spin‐orbit coupling refers to the relativistic interaction between the spin and orbital motions of electrons. This interaction leads to numerous intriguing phenomena, including spin‐orbit torques, spin–momentum locking, topological spin textures, etc., that have recently gained prominence in the field of spin‐orbitronics. In particular, the emerging ferroelectric control is recognized and validated as an effective means to enhance energy efficiency across a broad spectrum of spin‐orbitronic devices. Here, cutting‐edge research on ferroelectric control of spin‐orbitronics (FECSO) by means of spontaneous polarization, reversible ferroelectric switching, and multiferroic coupling, are comprehensively reviewed. Two fascinating topics are mainly discussed: topological spin texture and spin‐charge interconversion. The classification of control mechanisms for different interactions in FECSO is summarized first. Then, from the perspective of material classification, the ferroelectric‐controlled spin‐orbit coupling with tunable topological spin texture in oxide systems, magnetic metal multilayers, and 2D van der Waals materials is reviewed. Subsequently, the ferroelectric‐tunable spin‐charge interconversion on heavy metal layers, oxide interfaces, and ferroelectric Rashba semiconductors is highlighted. In the end, the challenges and forthcoming prospects of FECSO are discussed. This work may provide pertinent and forward‐thinking guidance to accelerate the ongoing advancement of this field. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
34
Issue :
41
Database :
Academic Search Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
180150092
Full Text :
https://doi.org/10.1002/adfm.202406444