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1. Process Innovations for Future Technology Nodes with Back-Side Power Delivery and 3D Device Stacking

Author

Kobrinsky, M., primary, Silva, J. D, additional, Mannebach, E., additional, Mills, S., additional, El Qader, M. Abd, additional, Adebayo, O., additional, Radhakrishna, N. Arkali, additional, Beasley, M., additional, Chawla, J., additional, Chugh, S., additional, Clinton, E., additional, Dasgupta, A., additional, Desai, U., additional, De Re, E., additional, Dewey, G., additional, Edwards, T., additional, Engel, C., additional, Galatage, R., additional, Ghani, T., additional, Gudmundsson, V., additional, Hibbeler, L., additional, Hicks, J., additional, Krist, B., additional, Mehandru, R., additional, Meric, I., additional, Morrow, P., additional, Nandi, D., additional, Pantuso, D., additional, Patel, P., additional, Pawashe, C., additional, Radosavljevic, M., additional, Ramamurthy, R., additional, Samanta, D., additional, Cekli, S., additional, Shoer, L., additional, Amour, A. St, additional, Tan, L. H., additional, Yemenicioglu, S., additional, Wang, X., additional, and Wiedemer, J. A., additional

Published
2023
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2. Novel Cell Architectures with Back-side Transistor Contacts for Scaling and Performance

Author

Kobrinsky, M., primary, Silva, J. D, additional, Mannebach, E., additional, Mills, S., additional, Qader, M. Abd El, additional, Adebayo, O., additional, Radhakrishna, N. Arkali, additional, Beasley, M., additional, Chawla, J., additional, Chugh, S., additional, Dasgupta, A., additional, Desai, U., additional, Re, E. De, additional, Dewey, G., additional, Edwards, T., additional, Engel, C., additional, Gudmundsson, V., additional, Hicks, J., additional, Krist, B., additional, Mehandru, R., additional, Meric, I., additional, Morrow, P., additional, Nandi, D., additional, Patel, P., additional, Ramamurthy, R., additional, Samanta, D., additional, Shoer, L., additional, Amour, A. St, additional, Tan, L. H., additional, Yemenicioglu, S., additional, Wang, X., additional, and Ghani, T., additional

Published
2023
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3. Poetry of al-Akhṭal : a close structural, thematic and stylistic analysis

Author

Jusoh, Tengku Ghani T.

Subjects
892.7
Abstract

The object of this thesis is to examine and to identify some of the characteristics of al-Akhtal's poetry. No such study of these five poems has previously been attempted. There are six sections to the thesis: 1. The text and translation. 2. A close structural and thematic analysis. 3. A stylistic analysis. 4. A conclusion. 5. Appendices. 6. Bibliography. It is hoped that from this study, it may be possible to present a critical examination of the poems in a manner which would be readily accessible to anyone interested.

Published
1995
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6. 2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications

Author

Alzate, J.G., primary, Hentges, P., additional, Jahan, R., additional, Littlejohn, A., additional, Mainuddin, M., additional, Ouellette, D., additional, Pellegren, J., additional, Pramanik, T., additional, Puls, C., additional, Quintero, P., additional, Rahman, T., additional, Arslan, U., additional, Sekhar, M., additional, Sell, B., additional, Seth, M., additional, Smith, A. J., additional, Smith, A. K., additional, Wei, L., additional, Wiegand, C., additional, Golonzka, O., additional, Hamzaoglu, F., additional, Bai, P., additional, Brockman, J., additional, Chen, Y. J., additional, Das, N., additional, Fischer, K., additional, Ghani, T., additional, and Heil, P., additional

Published
2019
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7. Non-Volatile RRAM Embedded into 22FFL FinFET Technology

Author

Golonzka, O., primary, Arslan, U., additional, Bai, P., additional, Bohr, M., additional, Baykan, O., additional, Chang, Y., additional, Chaudhari, A., additional, Chen, A., additional, Clarke, J., additional, Connor, C., additional, Das, N., additional, English, C., additional, Ghani, T., additional, Hamzaoglu, F., additional, Hentges, P., additional, Jain, P., additional, Jezewski, C., additional, Karpov, I., additional, Kothari, H., additional, Kotlyar, R., additional, Lin, B., additional, Metz, M., additional, Odonnell, J., additional, Ouellette, D., additional, Park, J., additional, Pirkle, A., additional, Quintero, P., additional, Seghete, D., additional, Sekhar, M., additional, Gupta, A. Sen, additional, Seth, M., additional, Strutt, N., additional, Wiegand, C., additional, Yoo, H. J., additional, and Fischer, K., additional

Published
2019
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8. MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

Author

Golonzka, O., primary, Alzate, J. -G., additional, Arslan, U., additional, Bohr, M., additional, Bai, P., additional, Brockman, J., additional, Buford, B., additional, Connor, C., additional, Das, N., additional, Doyle, B., additional, Ghani, T., additional, Hamzaoglu, F., additional, Heil, P., additional, Hentges, P., additional, Jahan, R., additional, Kencke, D., additional, Lin, B., additional, Lu, M., additional, Mainuddin, M., additional, Meterelliyoz, M., additional, Nguyen, P., additional, Nikonov, D., additional, O'brien, K., additional, Donnell, J.O, additional, Oguz, K., additional, Ouellette, D., additional, Park, J., additional, Pellegren, J., additional, Puls, C., additional, Quintero, P., additional, Rahman, T., additional, Romang, A., additional, Sekhar, M., additional, Selarka, A., additional, Seth, M., additional, Smith, A. J., additional, Smith, A. K., additional, Wei, L., additional, Wiegand, C., additional, Zhang, Z., additional, and Fischer, K., additional

Published
2018
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9. Why do defaults affect behavior? Experimental evidence from Afghanistan

Author

Blumenstock, J, Blumenstock, J, Callen, M, Ghani, T, Blumenstock, J, Blumenstock, J, Callen, M, and Ghani, T

Abstract

We report on an experiment examining why default options impact behavior. By randomly assigning employees to different varieties of a salary-linked savings account, we find that default enrollment increases participation by 40 percentage points - A effect equivalent to providing a 50 percent matching incentive. We then use a series of experimental interventions to differentiate between explanations for the default effect, which we conclude is driven largely by present-biased preferences and the cognitive cost of thinking through different savings scenarios. Default assignment also changes employees' attitudes toward saving, and makes them more likely to actively decide to save after the study concludes.

Published
2018

10. Optimization of Impact Resistant Throwable Unmanned Ground Vehicle Using Mathematical Modeling Techniques

Author

Sohail Hamza, Hamza Amir, Rashid Nasir, Ali Muhammad Saad, and Ghani Taha

Subjects
throwable unmanned ground vehicles, optimization, composite materials, impact force, mathematical modeling, land vehicle, Engineering (General). Civil engineering (General), TA1-2040
Abstract

Unmanned Ground Vehicles are used for various reasons. One of them is used in search and rescue operations which are known as Throwable Unmanned Ground Vehicles. It is a type of Unmanned Ground Vehicle which can sustain falls from several meters. Such vehicles are easily deployable, lightweight and impact resistant. Wheels play an important role since they absorb most of the impact. To optimize the performance of such vehicle, mathematical modeling is necessary. In this research paper, the main goal is to model the system mathematically. Parameters like impact forces, elasticity, Young’s modulus and duration of impact depend highly on material properties and structure of wheels. Results show the effect of certain parameters on wheel’s design and materials. For that purpose three materials are chosen PCTPE, carbon fiber, and vulcanized rubber for wheels. Impact forces, and duration of time are plotted against height of fall and diameter of the wheel for these materials.

Published
2024
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11. Impact Testing of Different Materials on Wheels Used in Throwable Unmanned Ground Vehicles

Author

Sohail Hamza, Hamza Amir, Rashid Nasir, Ali Muhammad Saad, and Ghani Taha

Subjects
unmanned ground vehicles, composite materials, impact testing, ansys, land vehicle, explicit dynamic analysis, Engineering (General). Civil engineering (General), TA1-2040
Abstract

Throwable Unmanned Ground Vehicles are light weight, small size, easily deployable and impact resistive vehicles mainly used in domestic as well as in military purposes where human life is compromised such as inspection of sewage pipes, and search and rescue operations etc. Main challenge while considering a Throwable UGV is its impact absorption capability which is seen through its material properties. Wheels of Throwable UGV absorb most of the impact without harming the internal structure. To solve this problem a honeycomb structured wheel is designed and simulated in ANSYS Workbench. Vulcanized rubber and Plastic composite PCTPE material wheels were impact tested using explicit dynamic analysis tool in ANSYS workbench. Total deformation, equivalent stress and strain results are tested in ANSYS under impact testing of wheel which is dropped from 10 meter height with velocity of 14m/s in a concrete surface. A plastic composite material PCTPE was 3D-printed and was used in Throwable Unmanned Ground Vehicle.

Published
2024
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13. EFFECT OF BMI (BODY MASS INDEX) ON BMD (BONE MINERAL DENSITY) IN POSTMENOPAUSAL WOMEN.

Author

GHANI, T., PAUL, S. K., BEGUM, A., NOORJAHAN, SARKAR, M., HUSSAIN, T., ANAR, M. G. A., RANA, M. S., and HOSSAIN, M. S.

Subjects
*BODY mass index, *BONE density, *MENOPAUSE, *OSTEOPOROSIS prevention, *PERIODIC health examinations
Abstract

Menopause is commonly associated with rapid bone loss and this bone loss manifests as a significant decrease in bone mineral density (BMD). Body weight or body mass index is the most important factor which influences BMD. Aim of this study was to evaluate the association between BMI and BMD in post menopausal women. Also to measure the correlation between age, duration of menopause, weight with BMD. This cross-sectional study was undertaken in the Department of Obstetrics and Gynaecology in Dhaka Medical College Hospital, Dhaka from January, 2012 to December, 2012. The study included women of 50 to 70 years who had menopause with three or more parity. Total 100 women were evaluated by history taking, physical examination and laboratory investigation (BMD).The results showed that there was significant positive correlation between BMI and BMD value of L1-4 and total femur (Pearson's coefficient was +0.285, P<0.01 and +.350, P<.001). There was also significant positive correlation between weight and T- score of L1-4 (r =+ .482, P<.01) and Total femur (r = +.513, P< .01). In addition, significant negative correlation was found between BMD with age and duration of menopause. It can be concluded that in postmenopausal women as the BMI decreases bone mineral density also decreases. So, adequate weight and BMI necessary for the prevention of osteoporosis. [ABSTRACT FROM AUTHOR]

Published
2019
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14. Research on the Writing History of Arabic Rhetoric Studies and its Importance

Author

Md. Nor Abdullah, Roslan Ab Rahman, Hashim Mat Zin, and Tengku Ghani T Jusoh

Subjects
Higher education, Grammar, business.industry, Arabic, media_common.quotation_subject, Field (Bourdieu), Economics, Econometrics and Finance (miscellaneous), General Social Sciences, Environmental Science (miscellaneous), language.human_language, Epistemology, Arts and Humanities (miscellaneous), Law, Rhetoric, Diction, language, Business, Management and Accounting (miscellaneous), business, Psychology, Composition (language), Sentence, media_common
Abstract

Now the situation studies in Arabic Rhetoric in Malaysia, especially in the field of Islamic studies such as misinterpretation of the Quran were less emphasized. This problem may stem from a lack of knowledge disclosure Rhetoric since in school, higher education and society in general. Learning Arabic is mostly just focused on knowledge of grammar and morphology without involving Rhetoric. Therefore, the objective of this study is to make a review of the early history of the development of pre-Islamic Rhetoric again until the eighth century as exposure to entice the attention of the community to Arabic Rhetoric and explain its significance. Library research method chosen to obtain the necessary data from the book of Arabic Rhetoric tradition. As a result, it is evident that the persistence of the scholars of the past do a research field with many other Arab Rhetoric inject motivation to researchers now. Leading works by al-Jurjani has opened a new dimension to the theory of Arabic Rhetoric al-Nazm (diction is the choice of words and sentence patterns appropriate to the situation). Its importance is very helpful to understand the Quran better. DOI: 10.5901/ajis.2013.v2n9p517

Published
2013
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15. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size

Author

Natarajan, S., primary, Agostinelli, M., additional, Akbar, S., additional, Bost, M., additional, Bowonder, A., additional, Chikarmane, V., additional, Chouksey, S., additional, Dasgupta, A., additional, Fischer, K., additional, Fu, Q., additional, Ghani, T., additional, Giles, M., additional, Govindaraju, S., additional, Grover, R., additional, Han, W., additional, Hanken, D., additional, Haralson, E., additional, Haran, M., additional, Heckscher, M., additional, Heussner, R., additional, Jain, P., additional, James, R., additional, Jhaveri, R., additional, Jin, I., additional, Kam, H., additional, Karl, E., additional, Kenyon, C., additional, Liu, M., additional, Luo, Y., additional, Mehandru, R., additional, Morarka, S., additional, Neiberg, L., additional, Packan, P., additional, Paliwal, A., additional, Parker, C., additional, Patel, P., additional, Patel, R., additional, Pelto, C., additional, Pipes, L., additional, Plekhanov, P., additional, Prince, M., additional, Rajamani, S., additional, Sandford, J., additional, Sell, B., additional, Sivakumar, S., additional, Smith, P., additional, Song, B., additional, Tone, K., additional, Troeger, T., additional, Wiedemer, J., additional, Yang, M., additional, and Zhang, K., additional

Published
2014
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16. OUTCOME OF PREMATURE RUPTURE OF MEMBRANES -- A STUDY OF 120 CASES IN DHAKA MEDICAL COLLEGE HOSPITAL.

Author

BEGUM, A., GHANI, T., PAUL, S. K., HUSSAIN, T., JAHAN, NOOR, and BEGUM, N.

Subjects
*GESTATIONAL age, *PREGNANCY complications, *NEWBORN infants, *MEDICAL hospitals
Abstract

Introduction: Premature rupture of membrane or PROM means when membrane ruptures before the onset of labour at a gestational age less than 37 completed weeks. In Bangladesh, every year, around 28,000 women die due to complications of pregnancy and childbirth. Nonscientific intervention in PROM made at various levels intensify the pregnancy complications several times, thereby leading many more deaths of foetus and newborn. Aetiology of PROM is largely unknown. The possible causes are either reduction of membrane strength or an increase in intrauterine pressure or both. Proper diagnostic facilities, proper monitoring and standard protocol in the management can improve the maternal and fetal outcome. Aim and objective: The aim of the study was to observe the incidence, type and maternal and fetal outcome of PROM. Materials and Method: A prospective case control analytical study was carried out at Dhaka Medical College Hospital, Dhaka from May '2000 to December'2000. Total 120 patients were selected for this study among them 60 patients as case (Group A) and 60 patients were taken as control (Group B). Both primi and multigravida with Pregnancy more than 28 weeks with intact membrane as control and spontaneous rupture of membrane taken as case. High- risk patients such as hypertensive disorder of pregnancy, APH, cardiac disease, previous H/O caesarean section were excluded from the study. After taking proper history, speculum examination, some diagnostic investigations were carried out. Findings were recorded in predesigned questionnaire and statistical analysis were done using computerized software SPSS for Windows. A P value < 0.05 was taken as significant. Results: In our study maternal complications were significantly higher in Group A patients (Chi-square test: X2 = 6.263, df= 1, P< 0.05). Number of premature babies in PROM patients (25%) was significantly higher than control group. Perinatal morbidity was found higher in PROM (36.66%) compared to control group (31.66%). Most common morbidity was neonatal jaundice in PROM patients (13.33%) compared to babies of control group (8.33%). Conclusion: This study focused on certain risk factors in relation to PROM which can be preventable and reduce incidence and improvement of maternal and fetal outcome. [ABSTRACT FROM AUTHOR]

Published
2016

17. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

Author

Auth, C., primary, Allen, C., additional, Blattner, A., additional, Bergstrom, D., additional, Brazier, M., additional, Bost, M., additional, Buehler, M., additional, Chikarmane, V., additional, Ghani, T., additional, Glassman, T., additional, Grover, R., additional, Han, W., additional, Hanken, D., additional, Hattendorf, M., additional, Hentges, P., additional, Heussner, R., additional, Hicks, J., additional, Ingerly, D., additional, Jain, P., additional, Jaloviar, S., additional, James, R., additional, Jones, D., additional, Jopling, J., additional, Joshi, S., additional, Kenyon, C., additional, Liu, H., additional, McFadden, R., additional, McIntyre, B., additional, Neirynck, J., additional, Parker, C., additional, Pipes, L., additional, Post, I., additional, Pradhan, S., additional, Prince, M., additional, Ramey, S., additional, Reynolds, T., additional, Roesler, J., additional, Sandford, J., additional, Seiple, J., additional, Smith, P., additional, Thomas, C., additional, Towner, D., additional, Troeger, T., additional, Weber, C., additional, Yashar, P., additional, Zawadzki, K., additional, and Mistry, K., additional

Published
2012
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18. High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors

Author

Packan, P., primary, Akbar, S., additional, Armstrong, M., additional, Bergstrom, D., additional, Brazier, M., additional, Deshpande, H., additional, Dev, K., additional, Ding, G., additional, Ghani, T., additional, Golonzka, O., additional, Han, W., additional, He, J., additional, Heussner, R., additional, James, R., additional, Jopling, J., additional, Kenyon, C., additional, Lee, S-H., additional, Liu, M., additional, Lodha, S., additional, Mattis, B., additional, Murthy, A., additional, Neiberg, L., additional, Neirynck, J., additional, Pae, S., additional, Parker, C., additional, Pipes, L., additional, Sebastian, J., additional, Seiple, J., additional, Sell, B., additional, Sharma, A., additional, Sivakumar, S., additional, Song, B., additional, St. Amour, A., additional, Tone, K., additional, Troeger, T., additional, Weber, C., additional, Zhang, K., additional, Luo, Y., additional, and Natarajan, S., additional

Published
2009
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19. Future device scaling - Beyond traditional CMOS

Author

Tyagi, S., primary, Auth, C., additional, Ban, I., additional, Chang, P., additional, Chau, R., additional, Ghani, T., additional, Jan, C-H., additional, Kavalieros, J., additional, Kuhn, K., additional, Maiz, J., additional, Mistry, K., additional, and Post, I., additional

Published
2009
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21. A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array

Author

Natarajan, S., primary, Armstrong, M., additional, Bost, M., additional, Brain, R., additional, Brazier, M., additional, Chang, C.-H., additional, Chikarmane, V., additional, Childs, M., additional, Deshpande, H., additional, Dev, K., additional, Ding, G., additional, Ghani, T., additional, Golonzka, O., additional, Han, W., additional, He, J., additional, Heussner, R., additional, James, R., additional, Jin, I., additional, Kenyon, C., additional, Klopcic, S., additional, Lee, S.-H., additional, Liu, M., additional, Lodha, S., additional, McFadden, B., additional, Murthy, A., additional, Neiberg, L., additional, Neirynck, J., additional, Packan, P., additional, Pae, S., additional, Parker, C., additional, Pelto, C., additional, Pipes, L., additional, Sebastian, J., additional, Seiple, J., additional, Sell, B., additional, Sivakumar, S., additional, Song, B., additional, Tone, K., additional, Troeger, T., additional, Weber, C., additional, Yang, M., additional, Yeoh, A., additional, and Zhang, K., additional

Published
2008
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23. 45nm High-k + metal gate strain-enhanced transistors

Author

Auth, C., primary, Cappellani, A., additional, Chun, J.-S., additional, Dalis, A., additional, Davis, A., additional, Ghani, T., additional, Glass, G., additional, Glassman, T., additional, Harper, M., additional, Hattendorf, M., additional, Hentges, P., additional, Jaloviar, S., additional, Joshi, S., additional, Klaus, J., additional, Kuhn, K., additional, Lavric, D., additional, Lu, M., additional, Mariappan, H., additional, Mistry, K., additional, Norris, B., additional, Rahhal-orabi, N., additional, Ranade, P., additional, Sandford, J., additional, Shifren, L., additional, Souw, V., additional, Tone, K., additional, Tambwe, F., additional, Thompson, A., additional, Towner, D., additional, Troeger, T., additional, Vandervoorn, P., additional, Wallace, C., additional, Wiedemer, J., additional, and Wiegand, C., additional

Published
2008
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24. Dielectric breakdown in a 45 nm high-k/metal gate process technology

Author

Prasad, C., primary, Agostinelli, M., additional, Auth, C., additional, Brazier, M., additional, Chau, R., additional, Dewey, G., additional, Ghani, T., additional, Hattendorf, M., additional, Hicks, J., additional, Jopling, J., additional, Kavalieros, J., additional, Kotlyar, R., additional, Kuhn, M., additional, Kuhn, K., additional, Maiz, J., additional, McIntyre, B., additional, Metz, M., additional, Mistry, K., additional, Pae, S., additional, Rachmady, W., additional, Ramey, S., additional, Roskowski, A., additional, Sandford, J., additional, Thomas, C., additional, Wiegand, C., additional, and Wiedemer, J., additional

Published
2008
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25. BTI reliability of 45 nm high-K + metal-gate process technology

Author

Pae, S., primary, Agostinelli, M., additional, Brazier, M., additional, Chau, R., additional, Dewey, G., additional, Ghani, T., additional, Hattendorf, M., additional, Hicks, J., additional, Kavalieros, J., additional, Kuhn, K., additional, Kuhn, M., additional, Maiz, J., additional, Metz, M., additional, Mistry, K., additional, Prasad, C., additional, Ramey, S., additional, Roskowski, A., additional, Sandford, J., additional, Thomas, C., additional, Thomas, J., additional, Wiegand, C., additional, and Wiedemer, J., additional

Published
2008
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26. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

Author

Mistry, K., primary, Chau, R., additional, Choi, C.-H., additional, Ding, G., additional, Fischer, K., additional, Ghani, T., additional, Grover, R., additional, Han, W., additional, Hanken, D., additional, Hattendorf, M., additional, He, J., additional, Allen, C., additional, Hicks, J., additional, Huessner, R., additional, Ingerly, D., additional, Jain, P., additional, James, R., additional, Jong, L., additional, Joshi, S., additional, Kenyon, C., additional, Kuhn, K., additional, Lee, K., additional, Auth, C., additional, Liu, H., additional, Maiz, J., additional, McIntyre, B., additional, Moon, P., additional, Neirynck, J., additional, Pae, S., additional, Parker, C., additional, Parsons, D., additional, Prasad, C., additional, Pipes, L., additional, Beattie, B., additional, Prince, M., additional, Ranade, P., additional, Reynolds, T., additional, Sandford, J., additional, Shifren, L., additional, Sebastian, J., additional, Seiple, J., additional, Simon, D., additional, Sivakumar, S., additional, Smith, P., additional, Bergstrom, D., additional, Thomas, C., additional, Troeger, T., additional, Vandervoorn, P., additional, Williams, S., additional, Zawadzki, K., additional, Bost, M., additional, Brazier, M., additional, Buehler, M., additional, and Cappellani, A., additional

Published
2007
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28. Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

Author

Shifren, L., primary, Wang, X., additional, Matagne, P., additional, Obradovic, B., additional, Auth, C., additional, Cea, S., additional, Ghani, T., additional, He, J., additional, Hoffman, T., additional, Kotlyar, R., additional, Ma, Z., additional, Mistry, K., additional, Nagisetty, R., additional, Shaheed, R., additional, Stettler, M., additional, Weber, C., additional, and Giles, M. D., additional

Published
2004
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29. A 90-nm Logic Technology Featuring Strained-Silicon

Author

Thompson, S.E., primary, Armstrong, M., additional, Auth, C., additional, Alavi, M., additional, Buehler, M., additional, Chau, R., additional, Cea, S., additional, Ghani, T., additional, Glass, G., additional, Hoffman, T., additional, Jan, C.-H., additional, Kenyon, C., additional, Klaus, J., additional, Kuhn, K., additional, Ma, Z., additional, Mcintyre, B., additional, Mistry, K., additional, Murthy, A., additional, Obradovic, B., additional, Nagisetty, R., additional, Nguyen, P., additional, Sivakumar, S., additional, Shaheed, R., additional, Shifren, L., additional, Tufts, B., additional, Tyagi, S., additional, Bohr, M., additional, and El-Mansy, Y., additional

Published
2004
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30. A Logic Nanotechnology Featuring Strained-Silicon

Author

Thompson, S.E., primary, Armstrong, M., additional, Auth, C., additional, Cea, S., additional, Chau, R., additional, Glass, G., additional, Hoffman, T., additional, Klaus, J., additional, Ma, Z., additional, Mcintyre, B., additional, Murthy, A., additional, Obradovic, B., additional, Shifren, L., additional, Sivakumar, S., additional, Tyagi, S., additional, Ghani, T., additional, Mistry, K., additional, Bohr, M., additional, and El-Mansy, Y., additional

Published
2004
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31. Understanding stress enhanced performance in Intel 90nm CMOS technology

Author

Giles, M.D., primary, Armstrong, M., additional, Auth, C., additional, Cea, S.M., additional, Ghani, T., additional, Hoffmann, T., additional, Kotlyar, R., additional, Matagne, P., additional, Mistry, K., additional, Nagisetty, R., additional, Obradovic, B., additional, Shaheed, R., additional, Shifren, L., additional, Stettler, M., additional, Tyagi, S., additional, Wang, X., additional, Weber, C., additional, and Zawadzki, K., additional

Published
2004
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47. IDENTIFIKASI KAWASAN RAWAN KONVERSI PADA LAHAN SAWAH DI KECAMATAN 2 X 11 ENAM LINGKUNG KABUPATEN PADANG PARIAMAN BERBASIS GIS (GEOGRAPHIC INFORMATION SYSTEM)

Author

Feri Arlius, Eri Gas Ekaputra, and Ghani Tasrif

Subjects
lahan rawan konversi, lahan sawah, kriteria kualitas lahan, tipe konversi lahan, Agriculture, Agriculture (General), S1-972, Technology (General), T1-995
Abstract

Lahan sawah Kecamatan 2x11 Enam Lingkung merupakan kawasan rawan konversi, hal ini dikarenakan wilayah Kecamatan 2x11 Enam Lingkung dilewati oleh jalan utama Padang– Bukittinggi dengan potensi terjadinya tingkat konversi lahan tinggi. Laju pertumbuhan penduduk setiap tahunnya meningkat dan letak daerah Kecamatan 2x11 Enam Lingkung berdekatan dengan pusat Kabupaten Padang Pariaman juga faktor yang mengakibatkan lahan sawah yang ada menjadi rawan konversi. Penelitian ini bertujuan untuk mengidentifikasi kawasan rawan konversi pada lahan sawah di Kecamatan 2x11 Enam Lingkung Kabupaten Padang Pariaman. Hasil pengolahan data spasial dan citra Kecamatan 2x11 Enam Lingkung diperoleh luas areal sawah untuk Kecamatan 2x1 Enam Lingkung tahun 2016 sebesar 886,66 Ha. Lahan sawah di Kecamatan 2x11 Enam Lingkung dibagi menjadi 4 kelas berdasarkan kriteria kualitas lahan sawah. Lahan sawah rawan konversi dibagi mejadi 4 tipe konversi lahan. Berdasarkan hasil pengolahan data didapatkan lahan rawan konversi pada lahan sawah di Kecamatan 2x11 Enam Lingkung seluas 185,83 Ha. Luas lahan sawah tipe konversi sistematik berpola enclave (K2) sebesar 55,81 Ha, tipe konversi lahan sebagai respon atas pertumbuhan penduduk (K3) sebesar 55,65 Ha, tipe konversi multi bentuk atau tanpa bentuk (K7) sebesar 2,22, dan tipe konversi kawasan jalan (K8) sebesar 72,15 Ha. Prediksi kehilangan produksi padi jika semua lahan sawah rawan konversi mengalami konversi lahan sebesar ± 1405,99 Ton/Tahun.

Published
2017
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48. Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-SiGe/n-Si heterojunction bipolar transistors.

Author

Ghani, T., Hoyt, J., McCarthy, A., and Gibbons, J.

Abstract

Boron out-diffusion in epitaxially grown n-Si/p-SiGe/n-Si heterojunction bipolar transistors is significantly enhanced during 850°C, 10 s rapid thermal annealing following arsenic emitter contact implantation. In this paper, we introduce three techniques which dramatically reduce boron out-diffusion during implant activation. Limiting the post-implant processing to 600°C for 2 min results in minimal diffusion giving acceptable device performance. A second technique involves pulsed laser annealing of the As implant, which removes residual defects and eliminates enhanced diffusion during subsequent thermal processing. Finally, we show that high bulk concentrations of oxygen in the SiGe (∼10 cm) dramatically reduce the implant-damage-enhanced boron diffusion. In addition to the depth profiles, electrical measurements performed on heterojunction bipolar transistors, incorporating these fabrication techniques, show ideal collector current characteristics and confirm the absence of deleterious boron out-diffusion effects. [ABSTRACT FROM AUTHOR]

Published
1995
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49. Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors

Author

Ghani, T., Hoyt, J., McCarthy, A., and Gibbons, J.

Abstract

Abstract: Boron out-diffusion in epitaxially grown n-Si/p+-Si1-xGex/n-Si heterojunction bipolar transistors is significantly enhanced during 850C, 10 s rapid thermal annealing following arsenic emitter contact implantation. In this paper, we introduce three techniques which dramatically reduce boron out-diffusion during implant activation. Limiting the post-implant processing to 600C for 2 min results in minimal diffusion giving acceptable device performance. A second technique involves pulsed laser annealing of the As implant, which removes residual defects and eliminates enhanced diffusion during subsequent thermal processing. Finally, we show that high bulk concentrations of oxygen in the Si1-xGex (∼1020 cm-3) dramatically reduce the implant-damage-enhanced boron diffusion. In addition to the depth profiles, electrical measurements performed on heterojunction bipolar transistors, incorporating these fabrication techniques, show ideal collector current characteristics and confirm the absence of deleterious boron out-diffusion effects.

Published
1995
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