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102 results on '"Gaddi, R."'

1. A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches

Author

Bedani, M., Carozza, F., Gaddi, R., Gnudi, A., Margesin, B., and Giacomozzi, F.

Subjects
Computer Science - Other Computer Science
Abstract

We propose the design of a reconfigurable impedance matching network for the lower RF frequency band, based on a developed RF-MEMS technology. The circuit is composed of RF-MEMS ohmic relays, metal-insulator-metal (MIM) capacitors and suspended spiral inductors, all integrated on a high resistivity Silicon substrate. The presented circuit is well-suited for all applications requiring adaptive impedance matching between two in principle unknown cascaded RF-circuits. The fabrication and testing of a monolithic integrated prototype in RF-MEMS technology from ITC-irst is currently underway., Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

Published
2008

2. A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package

Author

Iannacci, J., Tian, J., Gaddi, R., Gnudi, A., and Bartek, M.

Subjects
Computer Science - Other Computer Science
Abstract

In this work, we present a fully parameterized capped transmission line model for electromagnetic optimization of a wafer level package (WLP) for RF MEMS applications using the Ansoft HFSS-TM electromagnetic simulator. All the degrees of freedom (DoF's) in the package fabrication can be modified within the model in order to optimize for losses and mismatch (capacitive and inductive couplings) introduced by the cap affecting the MEMS RF behaviour. Ansoft HFSS-TM was also validated for the simulation of capped RF MEMS devices by comparison against experimental data. A test run of capped 50 transmission lines and shorts was fabricated and tested., Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

Published
2008

4. Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems

Author

Iannacci, J., Tian, Jason, Sinaga, S., Gaddi, R., Gnudi, A., and Bartek, M.

Subjects
Computer Science - Other Computer Science
Abstract

In RF-MEMS packaging, next to the protection of movable structures, optimization of package electrical performance plays a very important role. In this work, a wafer-level packaging process has been investigated and optimized in order to minimize electrical parasitic effects. The RF-MEMS package concept used is based on a wafer-level bonding of a capping silicon substrate to an RF-MEMS wafer. The capping silicon substrate resistivity, substrate thickness and the geometry of through-substrate electrical interconnect vias have been optimized using finite-element electromagnetic simulations (Ansoft HFSS). Test structures for electrical characterization have been designed and after their fabrication, measurement results will be compared with simulations., Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Published
2007

7. Culture, fashion and communication design in time of emergency. Communication and design strategies for the sustainable improvement of the fashion and textile production in the Indian subcontinent

Author

liberti r, gaddi r, A.a.V.v., Liberti, R, and Gaddi, R

Subjects
Sustainability, Inclusion, Local Excellence, Branding, Fashion Design
Abstract

Within the scenario of contemporary design, we daily observe experiments to redefine the meaning and value of products and give rise to renewed consumer attitudes, with a more ethical approach, according to the logic of circular economy and inclusive practices. The territory takes value from the tradition and the identity of the place, the so-called genius loci, and becomes a symbol for local values through the enhancement of traditional knowledge. In this proficient competition between territories, design becomes the element of dialogue between different societies and cultures. Today, the prevailing system of the fashion industry has created many environmental, social, and ethical issues behind the glamorous facade. How to reduce fabric waste during the design process has become an urgent requirement for fashion designers, specifically in countries with an outstanding industrial production as India. Even while the country progresses with power looms and modern designs, India still continues to protect its handloom legacy, traditions and culture to sustain the craft and keep it revived. The essay tackles the duality between branding and environmental sustainability for a fashion project developed at GD Goenka University on the theme of capsule collections between textile tradition and green experimentation.

Published
2021

16. Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems

Author

Jacopo Iannacci, Tian, J., Sinaga, S. M., Gaddi, R., Gnudi, A., Bartek, M., HiTeC-DIMES, Delft University of Technology (TU Delft), Advanced Research Center on Electronic Systems for Information and Communication Technologies E. De Castro [Bologna] (ARCES), and Alma Mater Studiorum Università di Bologna [Bologna] (UNIBO)

Subjects
[INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], FOS: Computer and information sciences, wafer-level packaging, Computer Science - Other Computer Science, Other Computer Science (cs.OH), through-vias, RF-MEMS, parasitics
Abstract

In RF-MEMS packaging, next to the protection of movable structures, optimization of package electrical performance plays a very important role. In this work, a wafer-level packaging process has been investigated and optimized in order to minimize electrical parasitic effects. The RF-MEMS package concept used is based on a wafer-level bonding of a capping silicon substrate to an RF-MEMS wafer. The capping silicon substrate resistivity, substrate thickness and the geometry of through-substrate electrical interconnect vias have been optimized using finite-element electromagnetic simulations (Ansoft HFSS). Test structures for electrical characterization have been designed and after their fabrication, measurement results will be compared with simulations., Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Published
2007
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17. A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches

Author

Bedani, M., Carozza, F., Gaddi, R., Gnudi, A., Margesin, B., Giacomozzi, F., M. Bedani, F. Carozza, R. Gaddi, A. Gnudi, B. Margesin, F. Giacomozzi, Advanced Research Center on Electronic Systems for Information and Communication Technologies E. De Castro [Bologna] (ARCES), Alma Mater Studiorum Università di Bologna [Bologna] (UNIBO), and Fondazione Bruno Kessler [Trento, Italy] (FBK)

Subjects
[INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], FOS: Computer and information sciences, Computer Science - Other Computer Science, Hardware_GENERAL, Other Computer Science (cs.OH), [INFO.INFO-OH]Computer Science [cs]/Other [cs.OH], Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, Hardware_LOGICDESIGN
Abstract

We propose the design of a reconfigurable impedance matching network for the lower RF frequency band, based on a developed RF-MEMS technology. The circuit is composed of RF-MEMS ohmic relays, metal-insulator-metal (MIM) capacitors and suspended spiral inductors, all integrated on a high resistivity Silicon substrate. The presented circuit is well-suited for all applications requiring adaptive impedance matching between two in principle unknown cascaded RF-circuits. The fabrication and testing of a monolithic integrated prototype in RF-MEMS technology from ITC-irst is currently underway., Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

Published
2007

20. Reliability of RF-MEMS

Author

Gaddi, R., ANTONIO GNUDI, Tazzoli, A., Meneghesso, G., Zanoni, E., R. Gaddi, A. Gnudi, A. Tazzoli, G. Meneghesso, and E. Zanoni

Subjects
MEMS, Radio Frequency, reliability, ING-INF/01 Elettronica
Abstract

The continuously evolving MEMS technology for RF/microwave applications poses issues regarding new reliability and lifetime estimation. We will overview the most important degradation mechanisms concerning capacitive and ohmic RF-MEMS devices and their effects on the device lifetime. Preliminary results will also be given on ElectroStatic Discharge effects on ohmic shunt switches adopting a Transmission Line Pulse stress technique.

Published
2005

22. Reconfigurable small antenna for mobile phone using MEMS tunable capacitor

Author

Ramachandran, Prasadh, Annamaa, P., Gaddi, R., Tornatta, P., Morrell, L., Schepens, C., Ramachandran, Prasadh, Annamaa, P., Gaddi, R., Tornatta, P., Morrell, L., and Schepens, C.

Abstract

In this paper we present a tunable PIFA which can be used in a mobile terminal. A NanoMech™ process enabled MEMS digital variable capacitor has been used as a capacitive load to the antenna. The antenna occupies a volume of just 1.3 cc and is targeted to be placed at the bottom corner of the device. With the help of tunability the antenna is able to cover from 704-960MHz in the low-band and 1710-2170MHz in the high-band, thus covering a wide range of frequency bands required for GSM/WCDMA/LTE systems. The MEMS device has an equivalent series inductance of less than 0.1nH hence the variation in the capacitance value with respect to frequency is less than 10%up to 5GHz. Further, the equivalent series resistance (ESR) of the digital variable capacitor is <0.4 across the whole frequency range of interest, hence causing very low insertion loss to the antenna. The tunable antenna is characterized by measuring it in 3D anechoic chamber. The measured total efficiency of the antenna varies from -4 to -2dB for 700MHz-960MHz and -3dB to -2dB for 1710-2170MHz., QC 20140409

Published
2013
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46. Profiling cardiac resynchronization therapy patients: responders, non-responders and those who cannot respond--the good, the bad and the ugly?

Author

Zacà V, Mondillo S, Gaddi R, Favilli R, Zacà, Valerio, Mondillo, Sergio, Gaddi, Rosaria, and Favilli, Roberto

Abstract

Cardiac resynchronization therapy (CRT) is an effective option for the management of heart failure (HF) patients with left ventricular systolic dysfunction and prolongation of the QRS interval. Unfortunately, a variable proportion of eligible patients fail to benefit from this treatment, the so-called "non-responders". Despite intensive investigations aimed at identifying reliable diagnostic tools, additional to standard criteria, for the selection of responders, partly due to the complexity and multi-factorial nature of the mechanism underlying response, no conclusive evidence is currently available about which of the many variables assessed may predict individual response and should be included in selection criteria. Accordingly, even if labeled as a non-responder, a patient should receive a CRT device being the certain risk of withholding the treatment more consistent than the potential risk of being a non-responder. However, a possible third profile of patients along with responders and non-responders is emerging consisting of a limited subset of individuals, mainly among those with HF of ischemic aetiology, who simply do not possess the anatomical requisite for conventional biventricular pacing to be effective. Such patients may be referred to as those who cannot respond to CRT and their identification is potentially feasible by integrating non-invasive imaging findings and of clinical relevance in the definition of the therapeutic strategy. In conclusion, this review will provide an analysis of gathered data about the selection of candidates to CRT beyond responders and non-responders with the perspective of the potential characterization of patients who cannot respond to CRT. [ABSTRACT FROM AUTHOR]

Published
2011
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49. Large-Signal Vectorial Load–Pull Characterization of MEMS RF-Actuation.

Author

Gaddi, R., Williams, T., Benedikt, J., Tasker, P.J., Giacomozzi, F., Margesin, B., and Gnudi, A.

Abstract

Electrostatic actuated radio frequency microelectromechanical systems (RF-MEMS) switches and variable capacitors are susceptible to issues related to RF actuation or even RF pull-in under large-signal regime. This phenomenon is strictly related to the average RF voltage more than power, and the impedance environment of the device should be fully accounted for. We perform for the first time large-signal time-domain measurements to characterize the RF actuation effect on the real-time capacitance value of a suspended membrane-based RF-MEMS varactor, while controlling the load impedance presented to the device with an active load-pull. The dependence of RF-actuation on both real impedance and inductive admittance is directly extracted, giving strong insights on how power handling should be carefully scrutinized against each specific circuit design. [ABSTRACT FROM PUBLISHER]

Published
2007
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50. The integrated evaluation of indoor particulate exposure (VIEPI) project: Main goals and campaign description

Author

Pelliccioni, A., Tofful, L., Catrambone, M., Marcovecchio, F., Monti, P., Leuzzi, G., Bernardino, A. D., Pini, A., Cattani, G., Cusano, M., Alessandro Di Menno di Bucchianico, Gaeta, A., Gaddi, R., Leone, G., Santis, A., Gherardi, M., Gordiani, A., L’episcopo, N., Ferrante, R., Boccuni, F., Tombolini, F., Conte, C., D’ovidio, M. C., Capone, P., Boccacci, L., Di Renzi, S., Cacciani, M., Canepari, S., and Perrino, C.

Subjects
exfiltration, aerobiological particles, indoor air quality, infiltration, PM, ultrafine particles

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