88 results on '"Fuse, G."'
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2. Electrical properties of Si heavily implanted with boron molecular ions.
3. Electrical properties of Si implanted with As through SiO2 films.
4. The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantation.
5. Relationship between degradation of wood and production of H2O2-producing or one-electron oxidases by brown-rot fungi
6. Recovery and characterization of Neptune's near-polar stratospheric hot spot
7. Doping mechanism of helium-based plasma
8. Significant roles of ultra-high energy ion implanter for high performance image sensing devices
9. Monitoring of W accumulation in ion implanter beam line utilizing portable XRF instrument
10. Fundamentals of Ion Implantation Technologies for Image Sensing Devices
11. New combination of damage control techniques using SEN's single-wafer implanters
12. Advanced yield-growth method: MIND+ (plus) system
13. Momentum Transfer Implantation for Sidewall Doping of FinFET's
14. Diffusion-less ultra-shallow p+/n junction formation in Si using low-temperature solid phase epitaxy and non-melt laser annealing
15. Vth control by halo implantation using the SEN's MIND system
16. Controlled dose-modulated ion implantation on serial implanters
17. Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans
18. Formation of shallow p+/n junction in silicon by non-melt laser annealing.
19. New combination of damage control techniques using SEN's single-wafer implanters.
20. Advanced yield-growth method: MIND+ (plus) system.
21. Feasibility study of plasma doping using B2H6 and PH3 for shallow junction.
22. A defect behavior in boron shallow junction formation of Si under low-temperature pre-anneal and non-melt-laser anneal.
23. Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices.
24. 55nm gate CMOS technology using sub-keV ion implantation without through surface oxide
25. 80 nm High Performance CMOSFET with Low Gate Leakage Current Using Conventional Thin Gate Nitric Oxide
26. N-channel MOS FET degradation by source/drain implantation.
27. A practical trench isolation technology with a novel planarization process.
28. New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation.
29. Arsenic implantation to oxide filled trench isolation structure
30. Narrow-width effects of shallow trench-isolated CMOS with n/sup +/-polysilicon gate.
31. A planarization technology using a bias-deposited dielectric film and an etch-back process.
32. A new isolation method with boron-implanted sidewalls for controlling narrow-width effect.
33. A new half-micrometer p-channel MOSFET with efficient punchthrough stops.
34. Ion-implanted thin polycrystalline-silicon high-value resistors for high-density poly-load static RAM applications.
35. A 16-Mbit DRAM with a relaxed sense-amplifier-pitch open-bit-line architecture.
36. Relationship between degradation of wood and production of H2O2-producing or one-electron oxidases by brown-rot fungi
37. The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO2-Si substrates
38. The effect of recoiled oxygen on the annealing properties of Si surface layer implanted with As through SiO 2films
39. The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO 2 -Si substrates.
40. 101-Stage 2 µm gate ring oscillators in laser-grown silicon islands embedded in SiO2.
41. Behavior of recoiled oxygen in through-oxide arsenic-implanted silicon
42. SCC (Surrounded Capacitor Cell) Structure for DRAM
43. A New Self-Aligned Contact Technology for LDD MOS Transistors
44. Depth Profiles of Boron Atoms with Large Tilt‐Angle Implantations
45. Über zwei bisher unbekannte Kreuzungsarten der Pyramidenbahn bei den Säugern: Der laterale Seitenstrangtypus der oberen, proximalen Pyramidenkreuzung beim Pangolin (Manis pentadactyla) und NacktschwanzgÜrteltier (Lysiurus unicinctus) sowie der ventrale Seitenstrangtypus der unteren, distalen Pyramidenkreuzung beim Zweizehenfaultier (Choloepus didactylus)
46. The Change of Wood Properties by the Decay
47. New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation
48. A New Half-Micron P-Channel MOS FET with Efficient Punchthrough Stops.
49. Trench Isolation with Boron Implanted Side-Walls for Controlling Narrow-Width Effect of n-MOS Threshold Voltages.
50. Reordering of implanted amorphous Si layers with low temperature RTA.
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