N-channel MOS FET degradation by source/drain implantation.

Authors :: Fuse, G.
Shibata, S.
Kato, Y.
Source :: Proceedings of 11th International Conference on Ion Implantation Technology; 1996, p642-645, 4p
Publication Year :: 1996

Language :: English
ISBNs :: 9780780332898
Database :: Complementary Index
Journal :: Proceedings of 11th International Conference on Ion Implantation Technology
Publication Type :: Conference
Accession number :: 92255074
Full Text :: https://doi.org/10.1109/IIT.1996.586485