The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO 2 -Si substrates.

Details

Language :

English

ISSN :

00337579

Volume :

47

Issue :

1-4

Database :

Complementary Index

Journal :

Radiation Effects

Publication Type :

Periodical

Accession number :

75428057

Full Text :

https://doi.org/10.1080/00337578008209194