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2. Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

Author

Smith, Roger, Shaw, Marcus, Webb, Roger P., and Foad, Majeed A.

Subjects
Molecular dynamics -- Models, Semiconductors -- Junctions, Physics
Abstract

Molecular dynamics simulations were conducted to determine the feasibility of employing decaborane B10H14 in the development of shallow junctions in Si. Results show that a small amount of H is also implanted in the crystal along with B atoms. Results also indicate that individual molecular collisions cause local swelling as well as small craters, creating a problem for ultrashallow junctions.

Published
1998

5. Formation of ultra-shallow junctions by ion implantation and RTA

Author

Foad, Majeed A. and Jennings, Dean

Subjects
Semiconductor device, Ion implantation -- Usage -- Methods, Semiconductor preparation -- Methods -- Usage, Annealing -- Usage -- Methods
Abstract

As device CDs shrink to 180 nm and beyond, doped regions in the transistor, in particular the source/drain (S/D) junctions, are getting shallower [1]. Stringent control on the lateral diffusion […]

Published
1998

6. Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon.

Author

Giubertoni, Damiano, Pepponi, Giancarlo, Gennaro, Salvatore, Bersani, Massimo, Sahiner, Mehmet Alper, Kelty, Stephen P., Doherty, Roisin, Foad, Majeed A., Kah, Max, Kirkby, Karen J., Woicik, Joseph C., and Pianetta, Piero

Subjects
ARSENIC, SILICON, HALL effect, ABSORPTION, SECONDARY ion mass spectrometry, ABSORPTION spectra, DENSITY functionals
Abstract

The understanding of the behavior of arsenic in highly doped near surface silicon layers is of crucial importance for the formation of N-type ultrashallow junctions in current and future very large scale integrated technology. This is of particular relevance when studying recently developed implantation and annealing methods. Past theoretical as well as experimental investigations have suggested that the increase in As concentration, and therefore the reciprocal proximity of several As atoms, leads to a drastic increase in electrically inactive defects giving only marginal reduction in sheet resistance. Monoclinic SiAs aggregates as well as various arsenic-vacancy clusters contribute to the deactivation of arsenic. This study aims to correlate between the results of electrical activation measurements and x-ray absorption fine structure measurements. Samples were doped with a nominal fluence of 1×1015–3×1015 atoms/cm2, implanted at 2 keV, and annealed by rapid thermal treatments, laser submelt treatments, and a combination of both. Hall effect and sheet resistance measurements have been performed to obtain the density of charge carriers. Secondary ion mass spectrometry has been employed to measure the depth profile and the total retained fluences. The percentage of substitutional arsenic has been obtained by least-squares fits of the measured x-ray absorption spectra with simulated spectra of relaxed structures of the defects obtained by density functional theory. A good agreement with the Hall effect measured electrically active dose fraction has been obtained and a quantification of the population of the different defects involved has been attempted. [ABSTRACT FROM AUTHOR]

Published
2008
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7. S/D extension formation for sub-65nm transistors

Author

Foad, Majeed and Graoui, Houda

Subjects
Transistors -- Research, Transistors -- Design and construction, Field-effect transistors -- Research
Abstract

OVERVIEW The increasing demand for high-performance computers and the widespread use of more complex consumer products continue to fuel the scaling of leading-edge logic devices. In particular, CMOS FETs must […]

Published
2005

9. Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

Author

Meirer, Florian, Demenev, Evgeny, Giubertoni, Damiano, Vanzetti, Lia, Gennaro, Salvatore, Fedrizzi, Michele, Pepponi, Giancarlo, Steinhauser, Georg, Vishwanath, Vinayak, Foad, Majeed, Bersani, Massimo, Debye Institute, Inorganic Chemistry and Catalysis, and Sub Inorganic Chemistry and Catalysis

Subjects
Arsenic implants, Plasma immersion ion implantation, Silicon, Condensed Matter Physics, Surface evolution
Abstract

The evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation and deposition (PIIID) using a non-pulsed plasma source was studied over a time period of more than one year. The study focused on the effect of arsenolite micro-crystal formation, enhanced oxidation, and the significant As dose loss from as implanted samples at room temperature. The study was carried out combining analytical evidence from SIMS, XPS, INAA, SEM, and optical microscopy suggesting a two stage process of As dose loss, the first implying arsenolite crystal growth and the second an out-diffusion. In fact, comparison of samples fabricated using different PIIID parameters showed that crystal growth seems not to be the only process responsible for dose loss.

Published
2014

11. Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing

Author

Demenev, Evgeny, Meirer, Florian, Essa, Zahi, Giubertoni, Damiano, Cristiano, Fuccio, Pepponi, Giancarlo, Gennaro, Salvatore, Bersani, Massimo, Foad, Majeed A., Debye Institute, Inorganic Chemistry and Catalysis, and Sub Inorganic Chemistry and Catalysis

Subjects
Laser annealing, Silicon, Ultra shallow junctions, Ion implantation, Condensed Matter Physics, Arsenic
Abstract

The stability and the evolution of electrical properties of high concentration arsenic ultra-shallow junctions in silicon have been studied with regard to their effect on the evolution of point defects. The activation of 2 keV 1 × 1015 cm-2 As implants was performed using millisecond sub-melt laser annealing at two different temperatures, 1100 and 1300 °C. The electrical deactivation upon subsequent thermal treatment at 700 °C was indirectly monitored through the diffusion of five 10 nm-wide boron layers aimed to detect the injection of self-interstitials coming from dopant clustering. Thermal treatments were repeated on samples implanted with Ge at condition similar to the As ones. The comparison helped to discriminate between interstitials coming from lattice damage evolution and dopant clustering. The results show the relevance of the laser annealing temperature in order to ensure junction stability in terms of active carrier concentration and junction depth.

Published
2014

12. Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

Author

Debye Institute, Inorganic Chemistry and Catalysis, Sub Inorganic Chemistry and Catalysis, Meirer, Florian, Demenev, Evgeny, Giubertoni, Damiano, Vanzetti, Lia, Gennaro, Salvatore, Fedrizzi, Michele, Pepponi, Giancarlo, Steinhauser, Georg, Vishwanath, Vinayak, Foad, Majeed, Bersani, Massimo, Debye Institute, Inorganic Chemistry and Catalysis, Sub Inorganic Chemistry and Catalysis, Meirer, Florian, Demenev, Evgeny, Giubertoni, Damiano, Vanzetti, Lia, Gennaro, Salvatore, Fedrizzi, Michele, Pepponi, Giancarlo, Steinhauser, Georg, Vishwanath, Vinayak, Foad, Majeed, and Bersani, Massimo

Published
2014

13. Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing

Author

Debye Institute, Inorganic Chemistry and Catalysis, Sub Inorganic Chemistry and Catalysis, Demenev, Evgeny, Meirer, Florian, Essa, Zahi, Giubertoni, Damiano, Cristiano, Fuccio, Pepponi, Giancarlo, Gennaro, Salvatore, Bersani, Massimo, Foad, Majeed A., Debye Institute, Inorganic Chemistry and Catalysis, Sub Inorganic Chemistry and Catalysis, Demenev, Evgeny, Meirer, Florian, Essa, Zahi, Giubertoni, Damiano, Cristiano, Fuccio, Pepponi, Giancarlo, Gennaro, Salvatore, Bersani, Massimo, and Foad, Majeed A.

Published
2014

14. Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study

Author

Sadigh, Babak, de La Rubia, Tomas Diaz, Lenosky, Thomas J., Theiss, Silva K., Caturla, Maria-Jose, Diaz de la Rubia, Tomas, and Foad, Majeed A.

Abstract

An exhaustive first-principles study of the energetics of B-Si interstitial complexes of various configurations and charge states is used to elucidate the diffusion mechanism of B in Si. Total energy calculations and molecular dynamics simulations show that B diffuses by an interstitialcy mechanism. Substitutional B captures a Si interstitial with a binding energy of 0.90 eV. This complex is itself a fast diffuser, with no need to first ``kick out'' the B into an interstitial channel. The migration barrier is about 0.68 eV. Kinetic Monte Carlo simulations confirm that this mechanism leads to a decrease in the diffusion length with increasing temperature, as observed experimentally.

Published
1999

15. Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study

Author

Meirer, Florian, primary, Demenev, Evgeny, additional, Giubertoni, Damiano, additional, Vanzetti, Lia, additional, Gennaro, Salvatore, additional, Fedrizzi, Michele, additional, Pepponi, Giancarlo, additional, Steinhauser, Georg, additional, Vishwanath, Vinayak, additional, Foad, Majeed, additional, and Bersani, Massimo, additional

Published
2013
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16. Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing

Author

Demenev, Evgeny, primary, Meirer, Florian, additional, Essa, Zahi, additional, Giubertoni, Damiano, additional, Cristiano, Fuccio, additional, Pepponi, Giancarlo, additional, Gennaro, Salvatore, additional, Bersani, Massimo, additional, and Foad, Majeed A., additional

Published
2013
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17. Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon

Author

Meirer, Florian, primary, Giubertoni, Damiano, additional, Demenev, Evgeny, additional, Vanzetti, Lia, additional, Gennaro, Salvatore, additional, Fedrizzi, Michele, additional, Pepponi, Giancarlo, additional, Mehta, Apurva, additional, Pianetta, Piero, additional, Steinhauser, Georg, additional, Vishwanath, Vinayak, additional, Foad, Majeed, additional, and Bersani, Massimo, additional

Published
2012
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19. Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment

Author

Giubertoni, Damiano, primary, Pepponi, Giancarlo, additional, Sahiner, Mehmet Alper, additional, Kelty, Stephen P., additional, Gennaro, Salvatore, additional, Bersani, Massimo, additional, Kah, Max, additional, Kirkby, Karen J., additional, Doherty, Roisin, additional, Foad, Majeed A., additional, Meirer, F., additional, Streli, C., additional, Woicik, Joseph C., additional, and Pianetta, Piero, additional

Published
2010
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20. Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)

Author

Ortolland, Claude, primary, Horiguchi, Naoto, additional, Kerner, Christoph, additional, Chiarella, Thomas, additional, Eyben, Pierre, additional, Everaert, Jean-Luc, additional, del Agua Borniquel, Jose Ignacio, additional, Poon, Tze, additional, Santhanam, Kartik, additional, Porshnev, Peter, additional, Foad, Majeed, additional, Schreutelkamp, Robert, additional, Absil, Philippe, additional, Vandervorst, Wilfried, additional, Felch, Susan, additional, Hoffmann, Thomas, additional, Seebauer, Edmund G., additional, Felch, Susan B., additional, Jain, Amitabh, additional, and Kondratenko, Yevgeniy V., additional

Published
2008
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27. Large enhancement of boron solubility in silicon due to biaxial stress

Author

Sadigh, Babak, primary, Lenosky, Thomas J., additional, Caturla, Maria-Jose, additional, Quong, Andrew A., additional, Benedict, Lorin X., additional, Diaz de la Rubia, Tomas, additional, Giles, Martin M., additional, Foad, Majeed, additional, Spataru, Catalin D., additional, and Louie, Steven G., additional

Published
2002
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