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303 results on '"Felix, Nelson M."'

1. Resist shrink characterization methodology for more accurate CD metrology

Author

Breton, Mary A., primary, Petrillo, Karen, additional, Church, Jennifer, additional, Meli, Luciana, additional, Fullam, Jennifer, additional, Sieg, Stuart, additional, Lallement, Romain, additional, Felix, Nelson M., additional, Levi, Shimon, additional, Zollinger, Susan, additional, Levitov, Felix, additional, Hand, Sean, additional, Osborne, Jason, additional, and Wang, Weijie, additional

Published
2022
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3. Morphology change and release of tin and lead micro-particles from substrates in hydrogen plasma

Author

Shefer, Dmitry, Nikipelov, Andrey, van de Kerkhof, Mark, Banine, Vadim, Beckers, Job, Felix, Nelson M., Lio, Anna, Complex Ionized Media, and Elementary Processes in Gas Discharges

Subjects
Materials science, Defectivity, Scanning electron microscope, business.industry, Extreme ultraviolet lithography, chemistry.chemical_element, Plasma, Particles, chemistry, Extreme ultraviolet, Reticle, Optoelectronics, EUV, business, Tin, Lithography, Particle Contamination Control, Lead oxide, Particle deposition
Abstract

Extreme ultraviolet (EUV) lithography is a technology for high volume manufacturing (HVM) of integrated circuits. HVM defines critical specification for cleanliness of reticles (masks) used to impose a pattern on wafers. EUV-induced hydrogen plasma produced by photoionization of the H2 gas by the 13.5 nm photons plays an important role in the release and transport of particles from contaminated surfaces to the reticle. It was observed that the rate of particle deposition on the reticle in an EUV scanner scales with EUV power which in turn defines the properties of the EUV-induced plasma to increase the knowledge regarding this phenomenon. We demonstrate images, acquired by a scanning electron microscopy (SEM) to illustrate morphological changes, accumulating in particles of tin, lead and lead oxide that were subject to applied hydrogen plasma (non-EUV). These changes led to the potential loss of adhesion of these materials to the relevant surfaces or potential defectivity outbreaks via explosive fragmentation. This work proposes that the mechanical stress in particles' material lattice caused by accumulation of hydrogen bubbles under the surface plays the major role in the morphological changes observed.

Published
2021

5. Particle contamination control by application of plasma

Author

Beckers, Job, van Minderhout, Boy, Blom, Paul P.M., Kroesen, Gerrit M.W., Peijnenburg, Ton, Felix, Nelson M., Lio, Anna, Elementary Processes in Gas Discharges, Complex Ionized Media, EAISI High Tech Systems, and EIRES Chem. for Sustainable Energy Systems

Subjects
Contamination control, Materials science, business.industry, Extreme ultraviolet lithography, Flow (psychology), Plasma, Contamination, Particles, Electric field, Extreme ultraviolet, EUV lithography, EUV, Aerospace engineering, business, Lithography
Abstract

With the introduction of Extreme Ultraviolet (EUV) lithography, the control of contamination has become crucial. Sources for contamination in EUV lithography scanners are not limited to only particle generation and release inside the scanner environment but may be introduced from outside as well, e.g. through translational and/or rotational (robotic) feedthroughs.In this contribution we highlight our joint (TU/e and VDL ETG) research efforts aimed at the development of plasma-enabled contamination control strategies. The focus in this research is on airborne particles immersed in a low pressure gas flow that interact with both the afterglow of a plasma and an externally applied electric field.A flexible experimental setup has been developed and will be introduced which is able to study the interaction between contaminants, plasmas and externally applied electric fields. Our results show that the designed configuration allows to carefully control the residual charges of the particles as well as their positions and trajectories with respect to the gas flow in which they are immersed. These results, together with the understanding of the underlying principle processes, open-up various possibilities to achieve improved cleanliness of the mentioned systems.

Published
2020

6. Spectral purity performance of high-power EUV systems

Author

van de Kerkhof, Mark, Liu, Fei, Meeuwissen, Marieke, Zhang, Xueqing, de Kruif, Robert, Davydova, Natalia, Schiffelers, Guido, Wählish, Felix, van Setten, Eelco, Varenkamp, Wouter, Ricken, Kees, de Winter, Laurens, McNamara, John, Bayraktar, Muharrem, Felix, Nelson M., Lio, Anna, and XUV Optics

Subjects
Scanner, Pellicle, Materials science, business.industry, Extreme ultraviolet lithography, Spectral Purity, Power (physics), Optics, DGL-membrane, Out-of-band management, Reticle, DUV, High-Power, EUV, Emission spectrum, business, Throughput (business), Spectral purity
Abstract

With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). The high EUV power of >200W being realized with this system satisfies the throughput requirements of HVM, but also requires reconsideration of the imaging aspects of spectral purity, both from the details of the EUV emission spectrum and from the DUV emission. This paper will present simulation and experimental results for the spectral purity of high-power EUV systems, and the imaging impact of this, both for the case of with and without a pellicle. Also, possible controls for spectral purity will be discussed, and a novel method will be described to measure imaging impact of varying CE and DUV. It will be shown that CE optimization towards higher source power leads to reduction in relative DUV content, that the small deltas in EUV source spectrum for higher power do not influence imaging. It will also be shown that resulting variations in DUV do not affect imaging performance significantly, provided that a suitable reticle black border is used. In short, spectral purity performance is not a bottleneck for increasing power of EUV systems to well above 250W.

Published
2020

9. Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch

Author

Church, Jennifer, primary, Meli, Luciana, additional, Guo, Jing, additional, Burkhardt, Martin, additional, Mack, Chris, additional, DeSilva, Anuja, additional, Petrillo, Karen, additional, Breton, Mary, additional, Bonam, Ravi, additional, Lallement, Romain, additional, Miller, Eric, additional, Austin, Brad, additional, Matham, Shravan, additional, and Felix, Nelson M., additional

Published
2020
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12. Electrical validation of the integration of 193i and DSA for sub-20nm metal cut patterning

Author

Liu, Chi-Chun, primary, Farrell, Richard A., additional, Lai, Kafai, additional, Mignot, Yann, additional, Liu, Eric, additional, Guo, Jing, additional, Ido, Yasuyuki, additional, Muramatsu, Makoto, additional, Felix, Nelson M., additional, Hetzer, David R., additional, Ko, Akiteru, additional, Arnold, John C., additional, and Corliss, Daniel A., additional

Published
2019
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14. The defect mitigation on EUV stack by track based technology

Author

Shibata, Naoki, primary, Huli, Lior, additional, Lemley, Corey, additional, Miyata, Yuichiro, additional, Hetzer, Dave, additional, Wada, Toshiharu, additional, Ko, Akiteru, additional, Kawakami, Shinichiro, additional, Kai, Akiko, additional, Shiozawa, Takahiro, additional, Yano, Hidetsugu, additional, Ueda, Kenichi, additional, Sonoda, Akihiro, additional, Petrillo, Karen, additional, Meli, Luciana, additional, Felix, Nelson M., additional, Murray, Cody, additional, and Hubbard, Alex, additional

Published
2019
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15. LCDU improvement of EUV-patterned vias with DSA

Author

Guo, Jing, primary, Janes, Dustin W., additional, Mignot, Yann, additional, Johnson, Richard C., additional, Chi, Cheng, additional, Liu, Chi-Chun, additional, Meli, Luciana, additional, Kuroda, Takuya, additional, DiPaola, Domenico A., additional, Tanaka, Yuji, additional, Harumoto, Masahiko, additional, Felix, Nelson M., additional, and Corliss, Daniel A., additional

Published
2019
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20. Defect detection strategies and process partitioning for SE EUV patterning (Conference Presentation)

Author

Kawakami, Shinichiro, primary, Meli, Luciana, primary, Petrillo, Karen, primary, De Silva, Anuja, primary, Arnold, John, primary, Felix, Nelson M., primary, Robinson, Chris, primary, Briggs, Benjamin, primary, Mignot, Yann, primary, Shearer, Jeffrey, primary, Hamieh, Bassem, primary, Hontake, Koichi, primary, Huli, Lior, primary, Lemley, Corey, primary, Hetzer, Dave, primary, Shimoaoki, Takeshi, primary, Hashimoto, Yusaku, primary, Ichinomiya, Hiroshi, primary, Kai, Akiko, primary, Tanaka, Koichiro, primary, Jain, Ankit, primary, Saville, Barry, primary, Lenox, Chet, primary, Matham, Shravan, primary, Liu, Eric, primary, Akiteru, Ko, primary, and Choi, HeungSoo, primary

Published
2018
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40. CNT EUV pellicle tunability and performance in a scanner-like environment

Author

Felix, Nelson M., Lio, Anna, Timmermans, Marina Y., Pollentier, Ivan, Korytov, Maxim, Nuytten, Thomas, Sergeant, Stefanie, Conard, Thierry, Meersschaut, Johan, Zhang, Yide, Dialameh, Masoud, Alaerts, Wilfried, Jazaeri, Ehsan, Spampinato, Valentina, Franquet, Alexis, Brems, Steven, Huyghebaert, Cedric, and Gallagher, Emily E.

Published
2021
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41. 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography

Author

Felix, Nelson M., Lio, Anna, De Simone, D., Kljucar, L., Das, P., Blanc, R., Beral, C., Severi, J., Vandenbroeck, N., Foubert, P., Charley, A., Oak, A., Xu, D., Gillijns, W., Mitard, J., Tokei, Z., van der Veen, M., Heylen, N., Teugels, L., Le, Q. T., Schleicher, F., Leray, P., Ronse, K., Kim, Il Hwan, Kim, Insung, Park, Changmin, Lee, Jisun, Ryu, Koungmin, De Schepper, P., Doise, J., and Kocsis, M.

Published
2021
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