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The unique ability of ferroelectrics to generate high voltage under shock loading is limited by electrical breakdown within the shock-compressed ferroelectric material. Breakdown is a hybrid process of initiation and growth. The possible mechanisms of electrical breakdown in ferroelectric films and bulk ceramics subjected to high-pressure shock loading are discussed and experiments designed to elucidate which mechanisms govern breakdown. Gigapascal shock loading experiments were performed on poled Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 ferroelectric film specimens in the range of 32–156 μm thickness to determine the dependence of the breakdown field on thickness and on film specimens in the range of 4–16 mm length to determine the dependence of the breakdown field on the duration of shock compression. The resulting breakdown-field vs thickness and breakdown-field vs shock transit time dependencies are consistent with a hybrid electron emission initiation and Joule heating microchannel growth mechanism. Further analysis of data previously obtained on shock-compressed 0.27Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.26PbTiO3 ferrvoelectric single crystals and Pb(Zr0.65Ti0.35)O3, Pb0.99(Zr0.52Ti0.48)0.99Nb0.01O3, Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 bulk ceramics is consistent with this dual mechanism. It appears that neither chemical composition nor microstructure (single crystal vs polycrystalline) of the ferroelectric material has a significant effect on the breakdown mechanism in shocked ferroelectrics. [ABSTRACT FROM AUTHOR]

This study investigates the stability of the (Hf,Zr)O2 (HZO) and AlScN thin films against the depolarization effect. In order to adversely interfere with the polarization screening of ferroelectric (FE) film and induce the depolarization effect, an Al2O3 film was inserted between the TiN bottom electrode and the FE film. Subsequently, to minimize charge injection through Al2O3 films, the double remanent polarization–voltage (2Pr–V) curve was measured employing voltage pulses with 1 μs-length. As the thickness of the Al2O3 film increased, the charge injection through the Al2O3 film decreased, leading to a decrease in the slope of the 2Pr–V curve. The magnitude of the depolarization field applied to the FE film was determined by simulating the 2Pr–V curve using an equivalent circuit model. Subsequently, the proportion of reversed domains during the delay period due to the depolarization effect was measured. It was revealed that HZO films exhibited vulnerability to the depolarization effect, with 16% of domains being reversed. On the other hand, AlScN films demonstrated superior stability, with polarization loss of less than 1%. Ultimately, it was revealed that AlScN films demonstrated superior stability against the depolarization effect compared to HZO films due to their higher coercive field and more uniform polarization distribution across the film area. [ABSTRACT FROM AUTHOR]

Ferroelectric strontium barium niobate (SrxBa1−xNb2O6 or SBN) is a material with high electro-optic (EO) response. It is currently of interest in low voltage silicon-integrated photonics (SiPh). We have grown strongly textured SBN films with x = 0.65 by radio frequency sputtering on (100)-oriented SrTiO3 substrates where grains with mixed (310) and (001) out-of-plane orientation form. For these mixed orientation films, we observed a maximum effective EO coefficient of 230 pm/V using a transmission EO measurement geometry that is responsive only to the in-plane polarization component coming from the (310)-oriented grains. We also demonstrate that by growing SBN on TiO2-terminated SrTiO3 substrates, we can obtain predominantly (001)-oriented SBN films with out-of-plane polarization. Transmission EO measurements on such (001)-oriented films show a reduced effective Pockels coefficient of 88 pm/V, which is consistent with the overall ferroelectric polarization becoming out-of-plane. This work shows that controlling substrate termination is effective in controlling the grain orientation of SBN films grown on top and that one can readily integrate SBN films on SrTiO3-buffered Si for use in SiPh. [ABSTRACT FROM AUTHOR]

Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb(1−3x/2)LaxHfO3 (PLHO-x, x = 0–0.05) thin films were fabricated on Pt(111)/TiO2/SiO2/Si substrates via the chemical solution deposition method. The x-ray diffraction and high-resolution transmission electron microscopy results show that the doping of La3+, which has a smaller ion radius, leads to a slight decrease in the lattice constant and unit cell volume, which can induce the lattice distortion. In addition, the dielectric and polarization properties indicate that with an increase in the temperature or La3+ content, the antiferroelectric (AFE) I phase can transform into an AFE II phase, exhibiting a slimmer P–E loop with enhanced switching field and more pronounced polarization dispersion. Notably, PLHO-0.04 showcases excellent energy storage performance (55 J/cm3, at 2.8 MV/cm). This material also exhibits good thermal, frequency, and fatigue stability. These results suggest that the energy storage performance of PbHfO3-based films can be enhanced through the phase structure design, presenting a valuable approach to fulfill the growing demand for advanced energy storage devices. [ABSTRACT FROM AUTHOR]

Magnetic materials with high negative spin polarization have been sought as a building block to increase the design freedom and performance of spintronics devices. In this paper, we investigate negative spin polarization of Mn2VGa Heusler alloy in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. We fabricated an epitaxial CPP-GMR stack consisting of Mn2VGa/Ag/CoFe with L21 ordering in the Mn2VGa layer and observed negative magnetoresistance (MR), which provided evidence of negative spin polarization. The MR ratio depended on thermal treatments (deposition at an elevated temperature and post-annealing), because these processes affected the ordering, roughness, and magnetic properties of Mn2VGa. The maximum MR ratio reached −1.8% at room temperature and −3.0% at low temperatures, representing the highest among the negative MR values in pseudo-spin-valve CPP-GMR devices despite the underestimation due to an incomplete antiparallel magnetization configuration. These findings demonstrate the potential of Mn2VGa for a material with high negative spin polarization. [ABSTRACT FROM AUTHOR]

Switching Spectroscopy Piezoresponse Force Microscopy (SSPFM) stands out as a powerful method for probing ferroelectric properties within materials subjected to incremental polarization induced by an external electric field. However, the dense data processing linked to this technique is a critical factor influencing the quality of obtained results. Furthermore, meticulous exploration of various artifacts, such as electrostatics, which may considerably influence the signal, is a key factor in obtaining quantitative results. In this paper, we present a global methodology for SSPFM data processing, accessible in open-source with a user-friendly Python application called PySSPFM. A ferroelectric thin film sample of potassium sodium niobate has been probed to illustrate the different aspects of our methodology. Our approach enables the reconstruction of hysteresis nano-loops by determining the PR as a function of applied electric field. These hysteresis loops are then fitted to extract characteristic parameters that serve as measures of the ferroelectric properties of the sample. Various artifact decorrelation methods are employed to enhance measurement accuracy, and additional material properties can be assessed. Performing this procedure on a grid of points across the surface of the sample enables the creation of spatial maps. Furthermore, different techniques have been proposed to facilitate post-treatment analysis, incorporating algorithms for machine learning (K-means), phase separation, and mapping cross correlation, among others. Additionally, PySSPFM enables a more in-depth investigation of the material by studying the nanomechanical properties during poling, through the measurement of the resonance properties of the cantilever–tip–sample surface system. [ABSTRACT FROM AUTHOR]

Layered thin films of the ferroelectric perovskite Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCZT) and the ferromagnetic half-metal La0.80Sr0.20MnO3 (LSMO) are well-known multiferroic systems that show promise for spintronic applications. In this work, the structure–property relationships are explored in novel BCZT/LSMO thin film heterostructures with optimized ferroic properties. Epitaxial BCZT/LSMO thin film heterostructures are grown by varying the lattice mismatch strains on single crystal LaAlO3 (LAO) (100) and MgO (100) substrates using the pulsed laser deposition technique. The epitaxial strain in the films gives rise to a tetragonal distortion of the BCZT and LSMO unit cells and significantly affects their magnetotransport and magnetodielectric properties. The BCZT/LSMO/LAO heterostructure exhibits a colossal magnetoresistance effect due to a large out-of-plane tensile strain, which induces enhanced carrier hopping in the LSMO layer as compared to the BCZT/LSMO/MgO film. The larger tetragonal distortion of the BCZT unit cell in BCZT/LSMO/MgO contributes to higher dielectric permittivity, with a greater dielectric maxima temperature and freezing temperature. Magnetodielectric measurements reveal a hitherto unobserved giant magnetodielectric effect in the BCZT/LSMO/MgO film, attributed to a large in-plane strain, which induces interfacial polarization distortion at the interfacial layer. Overall, this work elucidates the unique strain and charge-mediated cross-coupled phenomena of magnetic and electric orders in multiferroic thin film heterostructures, which are critical for their technological applications. [ABSTRACT FROM AUTHOR]

Oxygen defects are introduced into PbZr0.5Ti0.5O3 films and their impact on ferroelectric behavior, linear dielectric response (LDR), and nonlinear dielectric response (NDR) is studied. Apart from a notable decrease in both polarization and LDR permittivity, the frequency spectra of LDR exhibit a distinctive loss peak. The peak position varies with temperature and oxygen defect concentration. NDR parameters, including the Rayleigh coefficient (α1), the slope (α2) correlating the imaginary part of permittivity with the ac electric field, and the slope (k) between the real and the imaginary parts of permittivity, demonstrate diverse behaviors in response to temperature and oxygen defect concentration. The similarity in the frequency spectra of tanδ and 1/k reveals the correlation between LDR and NDR induced by the presence of oxygen defects. These observations are attributed to the behavior of the single and composite defects associated with oxygen vacancies. [ABSTRACT FROM AUTHOR]

This study analyzes the regulatory mechanism of oxygen vacancy concentration on tail-to-tail charged domain walls (T–T CDWs), along with the writing time, conduction current magnitude, and retention performance of through-type T–T CDWs. The research results show that the highest density and length of T–T CDWs are achieved when the oxygen vacancy concentration is 1 × 1020 cm−3. Moreover, the successful writing of through-type T–T CDWs is limited to a certain electric field range, which is controlled by oxygen vacancy concentration. An increase in the oxygen vacancy concentration leads to a decrease in the maximum and minimum threshold electric fields required for writing through-type charged domain walls. The writing time and conductivity of through-type T–T CDWs determine the information writing speed and signal strength of domain wall memories, and the oxygen vacancy concentration also plays a regulatory role in both aspects. When the oxygen vacancy concentration is 1 × 1020 cm−3, the through-type T–T CDW exhibits the fastest writing speed, requiring only 8 ns. The magnitude of the conduction current of through-type T–T CDWs is directly proportional to the oxygen vacancy concentration. The through-type T–T CDWs formed by the aggregation of oxygen vacancies exhibit excellent retention performance, making them highly promising for applications in ferroelectric domain wall memories. Our research demonstrates that oxygen vacancies have a significant regulatory effect on the morphology and current response of charged domain walls, opening up new avenues for the study of domain wall memories. [ABSTRACT FROM AUTHOR]

In this work, the piezoelectric properties of chemical solution deposition derived ferroelectric HfO2–CeO2 thin films deposited on platinized silicon substrates are investigated. Large-signal strain-field measurements show an effective piezoelectric coefficient of approximately d 33 , eff = 12.7 pm / V for 17 mol. % cerium under bipolar excitation and d 33 , eff = 8 pm / V under unipolar excitation. Progressive bipolar electric field cycling leads to a reduction in the overall field induced strain although no fatigue with regards to the polarization is observed. To explain this, we propose a model explanation based on changes in the polarization reversal pathway from a primarily ferroelastic, i.e., 90 ° domain wall mediated switching, to a 180 ° type switching. Furthermore, unipolar strain-field measurements reveal a negative intrinsic piezoelectric coefficient in the absence of any ferroelastic contribution, confirming theoretical predictions. The results suggest that the ferroelastic contribution to the field-induced strain needs to be stabilized in Hafnia-based ferroelectric materials to make them more feasible for micro-electromechanical systems. [ABSTRACT FROM AUTHOR]

This study presents findings indicating that the ferroelectric tunnel junction (FTJ) or resistive random-access memory (RRAM) in one cell can be intentionally selected depending on the application. The HfAlO film annealed at 700 °C shows stable FTJ characteristics and can be converted into RRAM by forming a conductive filament inside the same cell, that is, the process of intentionally forming a conductive filament is the result of defect generation and redistribution, and applying compliance current prior to a hard breakdown event of the dielectric film enables subsequent RRAM operation. The converted RRAM demonstrated good memory performance. Through current–voltage fitting, it was confirmed that the two resistance states of the FTJ and RRAM had different transport mechanisms. In the RRAM, the 1/f noise power of the high-resistance state (HRS) was about ten times higher than that of the low-resistance state (LRS). This is because the noise components increase due to the additional current paths in the HRS. The 1/f noise power according to resistance states in the FTJ was exactly the opposite result from the case of the RRAM. This is because the noise component due to the Poole–Frenkel emission is added to the noise component due to the tunneling current in the LRS. In addition, we confirmed the potentiation and depression characteristics of the two devices and further evaluated the accuracy of pattern recognition through a simulation by considering a dataset from the Modified National Institute of Standards and Technology. [ABSTRACT FROM AUTHOR]

Epitaxial (Bi, K)TiO3 films with 800- to 900-nm thicknesses were grown hydrothermally at 200 °C on SrTiO3 substrates covered with SrRuO3 layers. Perfectly (001)-oriented films grew on (100)SrTiO3 due to good lattice matching. Films on (110)SrTiO3 had mixed orientations of dominant (110) and minor (101), while three types of (111) orientations with in-plane 120° rotation were observed for the film on (111)SrTiO3. The (101) and (110) orientations of the film deposited on (110)SrTiO3 were tilted by approximately 2.6° and 1.6°, respectively, from surface normal due to the formation of a 90° domain with a twinning plane. The plane-view measurement for the film deposited on (111)SrTiO3 showed nine spots. These are explained by the presence of 15 possible spots resulting from the relaxed 90° domain combination and by overlapping. The lattice parameters of these films explain the tilting angles of these domains. These results reveal the formation of perfectly relaxed 90° domain structures for films grown on (110) and (111)SrTiO3. This differs from our previous data for tetragonal Pb(Zr,Ti)O3 films grown above TC on (110) and (111)SrTiO3 because the present films directly grow the ferroelectric films below TC without phase change. The tilting angle of the polar-axis and the volume fraction of the 90° domain can explain the piezoelectric responses of these films assuming that films have purely an up-state. This suggests that these films show almost pure up-state polarization without 180° domains, at least along surface-normal directions. These data show that these films have domain structures different from the well-known ones for the tetragonal Pb(Zr,Ti)O3 films. [ABSTRACT FROM AUTHOR]

We investigated leakage current characteristics affected by crystallinity and domain wall currents of epitaxial Bi5Ti3FeO15 (BTFO) thin films on Nb-doped SrTiO3 substrates. Highly a-oriented BTFO thin films, highly c-oriented BTFO thin films, and BTFO thin films with a mixture of a-oriented and c-oriented crystallinity were prepared by controlling the substrate temperature and the pulsed laser deposition deposition rate. Highly c-oriented BTFO thin films exhibited the best leakage current characteristics because the Bi2O2 layers were placed perpendicular to the c-axis to reduce leakage currents. The BTFO thin films with a mixture of a-oriented and c-oriented crystallinity showed larger leakage currents compared to highly c-oriented BTFO thin films. The current domains of the BTFO thin films corresponding to the ferroelectric domain structures were observed by a conducting atomic force microscope, and it was observed that leakage currents were formed around the domain walls. In particular, the largest leakage currents are formed at the boundaries of c-oriented domains and a-oriented domains, and these domain boundaries confirmed that the BTFO thin films with a mixture of a-oriented and c-oriented crystallinity were responsible for the largest leakage currents. [ABSTRACT FROM AUTHOR]

The demand for reliable memory devices capable of operating in harsh environments, such as space and vehicles, necessitates the development of high-temperature-resistant technologies. In this study, we propose a novel ferroelectric domain wall (DW) memory utilizing BiFeO3 thin films, which exhibit exceptional retention and fatigue properties at 135 °C. Achieving this performance was made possible through precise control of the oxygen vacancy density in the epitaxial thin films induced by a post-annealing procedure conducted under an appropriate oxygen pressure of 10 Pa. Initially, prototype nano-memory devices lacking post-annealing treatment demonstrated resistive switching behavior at room temperature, with a current rectification ratio of 100:1, achieved by manipulating the uncompensated DW induced by polarization switching. With the additional annealing procedure in lower oxygen pressure, the wall current magnitude of the devices increased significantly, indicating the critical role of the oxygen vacancies in modulating the DW conductivity. Moreover, the nanodevices exhibited improved polarization retention due to oxygen vacancy-mediated charge injection that can be further enhanced at the elevated temperature. The electrons trapped deeply at the artificial DW were found to stabilize the switched polarization at the expense of reduced DW conductivity, emphasizing the importance of precise control over oxygen vacancy density for achieving a balance between high DW conductivity and excellent polarization retention. [ABSTRACT FROM AUTHOR]

In this work, the effects of cerium doping and oxygen defects of ferroelectric Hf0.5Zr0.5O2 (HZO) are systematically studied by first-principles calculations. According to the results, the combined effect of Ce atoms and oxygen vacancy has a significant effect on the improvement of the orthorhombic phase fraction in HZO, and the mechanism of this phenomenon is also studied. The optimal concentration of Ce doping is 9.375 formula unit%, and the optimal concentration of oxygen vacancy is 9.375 formula unit%. The interaction between Ce doping and oxygen defects is also discussed from the perspective of structural stability and electrical balance. These findings are helpful for the preparation of Ce-doped HZO ferroelectric thin films and provide experience for the study of other dopants. [ABSTRACT FROM AUTHOR]

HfO2– and ZrO2–based ferroelectric thin films have emerged as promising candidates for the gate oxides of next-generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase mixture with partially in-plane polarization can lead to negative capacitance (NC) stabilization. However, there is a discrepancy between experiments and the theoretical understanding of domain formation and domain wall motion in these multi-phase, polycrystalline materials. Furthermore, the effect of anisotropic domain wall coupling on NC has not been studied so far. Here, 3D phase field simulations of HfO2– and ZrO2–based mixed-phase ultra-thin films on silicon are applied to understand the necessary and beneficial conditions for NC stabilization. It is found that smaller ferroelectric grains and a larger angle of the polar axis with respect to the out-of-plane direction enhances the NC effect. Furthermore, it is shown that theoretically predicted negative domain wall coupling even along only one axis prevents NC stabilization. Therefore, it is concluded that topological domain walls play a critical role in experimentally observed NC phenomena in HfO2– and ZrO2–based ferroelectrics.

Understanding the mechanisms underlying a stable polarization at the surface of ferroelectric thin films is of particular importance both from a fundamental point of view and to achieve control of the surface polarization itself. In this study, we demonstrate that the X-ray standing wave technique allows the surface polarization profile of a ferroelectric thin film, as opposed to the average film polarity, to be probed directly. The X-ray standing wave technique provides the average Ti and Ba atomic positions, along the out-of-plane direction, near the surface of three differently strained thin films. This technique gives direct access to the local ferroelectric polarization at and below the surface. By employing X-ray photoelectron spectroscopy, a detailed overview of the oxygen-containing species adsorbed on the surface is obtained. The different amplitude and orientation of the local ferroelectric polarizations are associated with surface charges attributed to different type, amount and spatial distribution of the oxygen-containing adsorbates. [ABSTRACT FROM AUTHOR]

Superconductor/ferroelectric heterostructures are very important for fundamental research and applications since superconductivity can be controlled by electric fields via ferroelectric polarization/piezostrain. Superconductivity is a macroscopic quantum phenomenon and it is commonly believed that the in‐plane superconducting transition temperature (Tc) should be isotropic for superconductors with crystal structures of stacking layers (quasi 2D). Here, the observation of piezostrain‐induced in‐plane anisotropy of Tc in FeSe0.5Te0.5 (FST) thin films grown on ferroelectric single crystals is reported. The as‐prepared FST shows a tetragonal phase with equal in‐plane lattice parameters and an absence of in‐plane anisotropy of Tc. Upon applying electric fields, piezostrain induces a difference in the in‐plane lattice parameters (a‐b) and in‐plane anisotropy of Tc. The in‐plane anisotropy of Tc correlates with a‐b and becomes more remarkable for larger values of a‐b. Some possible extrinsic effects are ruled out by experiments and analysis. A possible mechanism is proposed involving electronic nematicity and inhomogeneous superconductivity in FST to account for this unusual phenomenon. This work is significant for uncovering the exotic nature of unconventional superconductors, as well as applications. [ABSTRACT FROM AUTHOR]

Ferroelectric materials hold significant potential for ultralow-energy-consuming oxide electronics and have recently been pointed out as a suitable platform for next-generation neuromorphic and reservoir computing schemes. We provide a brief overview of the progress in engineering electric dipole textures of epitaxial ferroelectric oxide thin films, with an emphasis on the technologically relevant ultrathin regime. In epitaxial films that are only a few unit-cells thick, surface chemistry and interfacial electrostatics are commonly considered limiting factors in ferroelectric device integration, as they may suppress the net ferroelectric behavior. Here, we highlight how nanoscale lattice chemistry control, including off-stoichiometry and layer polarization in oxides, can, in fact, emerge as powerful tools for engineering ferroelectricity in thin films. We also discuss the potential of such an approach in the context of recent trends in the field, such as the design of ferroelectric freestanding membranes and the optical control of polarization in thin films. Hence, with our Perspective article, we aim to provide key insights on the use of lattice chemistry for ferroelectricity engineering in thin films to facilitate exciting developments in ferroelectric-based applications. [ABSTRACT FROM AUTHOR]

Using the radio frequency magnetron sputtering process, NaNbO3-based antiferroelectric thin films were obtained on Pt(111)/Ti/SiO2/Si substrates. The effects of annealing temperature on the phase structure, dielectric properties, ferroelectric properties, and energy storage properties of the thin films were studied. As the annealing temperature increased, the crystallinity and film quality of the thin films improved. Moreover, oxygen vacancies were effectively suppressed, which is beneficial for the thin film to obtain a higher dielectric constant, a larger saturation polarization, and a smaller residual polarization intensity. The NaNbO3-based thin film has a higher energy storage density, power density and efficiency (Wrec = 3.6 J/cm3, Pd =200.8 kW/cm3, η = 68.31%) at an annealing temperature of 600 ℃. The observed phenomenon could be attributed to higher breakdown field strength and polarization difference resulting from the appropriate annealing temperature and the presence of lower oxygen vacancies under pure oxygen atmosphere. The wonderful property of the NaNbO3-based thin film indicates that it will have the potential to be applied in a wide range of contexts within the sphere of energy storage. [ABSTRACT FROM AUTHOR]

This study investigates the synthesis and electrical property tailoring of BaZrxTi1-xO3 (BZT) ferroelectric films through Zr content variation, offering new insights into non-ferroelectric resistive switching (RS) mechanisms. Using a sol–gel spin-coating technique, BZT films with varying Zr compositions (x = 0.2, 0.4, 0.6, and 0.8) were deposited on (001)-oriented Si substrates. Our investigation reveals the intricate influence of Zr doping on crystalline structure, morphology, dielectric response, energy storage capability, ferroelectric polarization, leakage current, conductive mechanism, and RS behaviors. Notably, lower Zr4+ substitution for Ti4+ enhances grain growth and morphology, resulting in superior dielectric properties. Films with Zr doping below 40% demonstrate exceptional crystalline quality, higher dielectric constant, increased polarization withstand voltage, and reduced leakage currents. Remarkably, above 40% Zr concentrations, despite declines in these properties, a robust RS phenomenon emerges and strengthens with increased Zr doping. This RS behavior, attributed to the formation and rupture of conductive filaments rather than ferroelectric polarization, opens new pathways for developing advanced non-volatile memory devices. Our findings offer a breakthrough in understanding and engineering BZT films, providing a strategic foundation for future electronic and memory applications. [ABSTRACT FROM AUTHOR]

Lead-free ferroelectric thin film capacitors offering superb power density and fast charge-discharge rates are ideal for energy storage applications. However, the trade-off relationship between polarization strength and breakdown strength significantly hinders the improvement of energy storage performance. In this work, relaxor-ferroelectric Na 0.5 Bi 0.5 TiO 3 (NBT) thin films have been deposited on Pt/Ti/SiO 2 /Si substrate via sol-gel method. First, the energy storage performance of the films is optimized by adjusting the annealing temperature. It is found that the NBT film annealed at 650 °C has both excellent breakdown strength and polarization strength. Then the influence of ion doping on the energy storage performance of NBT films has been studied. An excellent energy storage density of 42.1 J/cm3 and efficiency of 55.8 % are simultaneously achieved in the 2 % Mn-NBT thin film. Additionally, the energy storage performance remains stable within the temperature range of 25–180 °C and frequency range of 500–5000 Hz. The energy storage performance of 2 % Mn-NBT thin film did not decrease significantly after 107 electrical cycles. It is predicted that this work will advance the utilization of Na 0.5 Bi 0.5 TiO 3 -based film capacitors in energy storage systems. [ABSTRACT FROM AUTHOR]

Antiferroelectrics have recently captured widespread attention for their potential applications in energy storage capacitors, electronic and electrothermal devices. PbZrO3, being the first antiferroelectric discovered, remains the focus of antiferroelectric studies. Conventionally, the PbZrO3 ceramics were prepared via a high-temperature solid-state reaction method (higher than 1000∘C). Here, we report a simple sol–gel route to prepare single-phase PbZrO3 ceramic at a much lower calcination temperature of 600∘C. By using the single-phase PbZrO3 ceramics, thin films with outstanding antiferroelectric property showing well-defined double-hysteresis polarization switching were further obtained by pulsed laser deposition. [ABSTRACT FROM AUTHOR]

Incorporating specific defects into complex oxides facilitates the exploration of exotic phenomena and novel functionalities based on the intricate coupling between the defects and lattice/charge. However, methods for maximizing the density of specific defects while enhancing the desired properties have been rarely explored. In this study, the effect of N+ ion bombardment‐driven specific defects on the properties of bismuth ferrite (BFO) thin films was investigated. Furthermore, atomic structure characterization and computational processing revealed the displacement and orientation of the Fe atoms, which are linearly related to the degree of polarization. The ion bombardment introduced deep‐level trap states within the lattice, leading to a significant reduction in the leakage current and improved insulation performance of the films. By precisely engineering the defect content through N+ ion bombardment, the pure BFO thin films with remarkable and stable ferroelectric properties (remnant polarization, Pr = ∼116.8 µC·cm−2; leakage current, J = ∼1.5 × 10−8 A·cm−2) were fabricated. This innovative defect engineering‐based approach enables the customization and optimization of local ferroelectric order parameters, thereby establishing a solid foundation for designing functionalities across various functional material systems. [ABSTRACT FROM AUTHOR]

In this paper, the thin-film ferroelectric material equation (TFFME) which enables the propagation of solitary polarization in thin-film ferroelectric materials is investigated, and also illustrated through the nonlinear evolution equations. Ferroelectrics are dielectric materials that exhibit nonlinear behaviors in wave propagation. Thin films constructed from the ferroelectric materials are utilized in different modern electronic devices. To investigate the characteristics of new waves, the solitary wave dynamics of the mentioned equation is used in the generalized trial equation scheme. The bright and periodic solutions are obtained by semi-inverse variational principle scheme. Many alternative responses may be obtained through different formulae; each of these solutions offers a distinct graph. The validity of such methods and solutions may be demonstrated by assessing how well the relevant techniques and solutions match up. The effects of free variables on the behavior of few achieved solutions for nonlinear rational exact cases are also plotted and explored depending upon the nature of nonlinearities. The dynamic properties of the obtained results are shown and analyzed by some density, two- and three-dimensional images. The results provide a way for future research on generating optical memories based on the nonlinear solitons. [ABSTRACT FROM AUTHOR]

The flexoelectric effect describes phenomena where strain gradients induce electrical polarization and electric field gradients cause strain in materials. This specific type of electromechanical coupling effect is remarkable for being independent of material symmetry, Curie temperature, and it exhibits notable effects in small‐sized materials. The study of flexoelectric effects has provided fresh insights into materials science, particularly highlighting how thin‐film structures, with their unique geometrical and dimensional attributes, are highly responsive to flexoelectric influences, thereby offering significant opportunities for modulating electrical properties. Herein, this paper presents the fundamental concepts and theories underlying the flexoelectric effect are presented. Various methods for inducing this effect in thin films are explored, including the optimization of growth and deposition conditions, and the application of external mechanical stresses to create strain gradients. Additionally, recent advances in utilizing the flexoelectric effect to modulate ferroelectric domains, modify properties of thin films, and enhance functionalities in photovoltaic systems, nanogenerators, sensors, and actuators are reviewed. Finally, the challenges and future prospects for flexoelectric effects in advanced electronics are briefly presented. [ABSTRACT FROM AUTHOR]

As analogies to magnetic skyrmions, polar skyrmions in ferroelectric superlattices and multilayers have garnered widespread attention for their non-trivial topology and novel properties like negative capacitance and nonlinear optical effect. So far, they have only been theoretically predicted to be able to assemble ordered hexagonal skyrmion lattices (SkLs) in ferroelectric thin films. Here, based on phase-field simulations, we report the critical roles of flexoelectricity playing in the stabilization and transformation of polar SkLs. Different polar SkL patterns can emerge in the ferroelectric thin films, including tetragonal-SkL, and hexagonal-SkLs with diverse orientations, as summarized by phase diagrams. These emergent SkL states are attributed to the material anisotropy modified by the flexoelectric effect. Interestingly, we further found that the hexagonal-SkLs can be rotated by applying strain gradient or in-plane electric field to the films. Moreover, a nonreciprocal bending response of tetragonal-SkL is also induced by the flexoelectric effect. Our results provide useful guidelines for the implementation of polar skyrmion lattices in experiments. [ABSTRACT FROM AUTHOR]

The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power consumption, high operation speed, and nondestructive reading, has attracted great attention for the application of next-generation nonvolatile memory. The complementary metal–oxide–semiconductor-compatible hafnium oxide (HfO2) ferroelectric thin film found in the recent decade is promising for the scalability and industrialization of FTJs. However, the electric performance, such as the tunneling electroresistance (TER) effect, of the current HfO2-based FTJs is not very satisfactory. In this work, we propose a type of high-performance HfO2-based FTJ by utilizing a ferroelectric/dielectric composite barrier strategy. Using density functional theory calculations, we study the electronic and transport properties of the designed Ni/HfO2/MgS/Ni (001) FTJ and demonstrate that the introduction of an ultra-thin non-polar MgS layer facilitates the ferroelectric control of effective potential barrier thickness and leads to a significant TER effect. The OFF/ON resistance ratio of the designed FTJ is found to exceed 4 × 103 based on the transmission calculation. Such an enhanced performance is driven by the resonant tunneling effect of the ON state, which significantly increases transmission across the FTJ when the ferroelectric polarization of HfO2 is pointing to the non-polar layer due to the aroused electron accumulation at the HfO2/MgS interface. Our results provide significant insight for the understanding and development of the FTJs based on the HfO2 ferroelectric/non-polar composite barrier. [ABSTRACT FROM AUTHOR]

The potential of HfO 2 as a memory semiconductor material with ferroelectric properties in thin-film deposition has been recently analyzed. In this study, the preparation, composition, and physical properties of Al-doped hafnium oxides were analyzed. Hf x Al (1- x) O y (HAO) [ x = 0.33, 0.5, and 0.67] powders were prepared by controlling the ratio of Hf to Al and using ball milling. The HAO powder was calcined at 1000 °C in a furnace and then sintered in a temperature range of 1000–1600 °C by a solid-state reaction method to fabricate high-quality targets with high densities. The density and crystal size increased with the sintering temperature. The 1600-°C Hf 0.67 Al 0.33 O y target was optimal for thin-film deposition. In addition, the target properties were affected by an increase in the HfO 2 content x. The crystal structures and sizes, surface free energies, contact angles, and band gaps of the HAOs were evaluated to analyze their potential as high- k dielectric materials. HAO is a promising high- k dielectric and memory material, valuable for further studies on ferroelectric gate oxide materials. This study contributes to the increasing number of studies on the ferroelectricity of HfO 2 thin films and provides a fundamental understanding of this material and its potential for novel device applications. [ABSTRACT FROM AUTHOR]

Magnetic and ferroelectric oxide thin films have long been studied for their applications in electronics, optics, and sensors. The properties of these oxide thin films are highly dependent on the film growth quality and conditions. To maximize the film quality, epitaxial oxide thin films are frequently grown on single‐crystal oxide substrates such as strontium titanate (SrTiO3) and lanthanum aluminate (LaAlO3) to satisfy lattice matching and minimize defect formation. However, these single‐crystal oxide substrates cannot readily be used in practical applications due to their high cost, limited availability, and small wafer sizes. One leading solution to this challenge is film transfer. In this demonstration, a material from a new class of multiferroic oxides is selected, namely bismuth‐based layered oxides, for the transfer. A water‐soluble sacrificial layer of Sr3Al2O6 is inserted between the oxide substrate and the film, enabling the release of the film from the original substrate onto a polymer support layer. The films are transferred onto new substrates of silicon and lithium niobate (LiNbO3) and the polymer layer is removed. These substrates allow for the future design of electronic and optical devices as well as sensors using this new group of multiferroic layered oxide films. [ABSTRACT FROM AUTHOR]

The study reviews the current progress in the sol-gel method for the synthesis of ferroelectric powders, thin films, and rods in the lead zirconate-titanate system. In addition, it examines methods for obtaining controlled particle morphology, primarily rod-like. The synthetic approaches in the sol-gel process and heat treatment conditions for obtaining lead zirconate-titanate ceramics of pre-defined morphology are the primary focus of the present review. [ABSTRACT FROM AUTHOR]

Ferroelectric HfO2 has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal–oxide–semiconductor (CMOS) technology. However, the crystallization of polar orthorhombic phase (o-phase) HfO2 is less competitive, which greatly limits the ferroelectricity of the as-obtained ferroelectric HfO2 thin films. Fortunately, the crystallization of o-phase HfO2 can be thermodynamically modulated via interfacial stress engineering. In this paper, the growth of improved ferroelectric Al doped HfO2 (HfO2:Al) thin films on (111)-oriented Si substrate has been reported. Structural analysis has suggested that nonpolar monoclinic HfO2:Al grown on (111)-oriented Si substrate suffered from a strong compressive strain, which promoted the crystallization of (111)-oriented o-phase HfO2 in the as-grown HfO2:Al thin films. In addition, the in-plane lattice of (111)-oriented Si substrate matches well with that of (111)-oriented o-phase HfO2, which further thermally stabilizes the o-phase HfO2. Accordingly, an improved ferroelectricity with a remnant polarization (2 P r) of 26.7 μC/cm2 has been obtained. The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO2 thin films. [ABSTRACT FROM AUTHOR]

This document provides information about the data availability for a study conducted by a group of authors. The authors' names are listed, and it is stated that the data supporting the findings of the study are available within the article. The document does not provide any further details about the study or its findings. [Extracted from the article]

Inorganic dielectric films have attracted extensive attention in the field of microelectronic and electrical devices because of their wide operating temperature range, small size, and easy integration. Here, we designed and prepared eco-friendly (1-x)Bi0.45Na0.45Ba0.1TiO3-xBi(Mg1/3Nb2/3)O3 multifunctional ferroelectric thin films for energy storage and photovoltaic. The results show that Bi(Mg1/3Nb2/3)O3 can effectively improve the energy storage performance. At x = 0.05, the energy storage density and efficiency are as high as 73.1 J/cm3 and 86.2%, respectively, and can operate stably in a wide temperature range. The breakdown field strength of the thin films increased significantly, and the analysis showed that the addition of Bi(Mg1/3Nb2/3)O3 caused a change in the internal conduction mechanism. At the same time, the generation of polar nanoregions increases the relaxation characteristics, thus improving the energy storage properties. In addition, the thin film material also has excellent ferroelectric photovoltaic properties. This work represents a new design paradigm that can serve as an effective strategy for developing advanced multi-functional materials. [ABSTRACT FROM AUTHOR]

Oxygen vacancies play a crucial role in stabilizing the ferroelectric phase in hafnium (Hf) oxide-based thin films and in shaping the evolution of their ferroelectric properties. In this study, we directly manipulated the oxygen vacancy concentration in Hf0.5Zr0.5O2−x (HZO) ferroelectric thin films in situ using oxygen plasma treatment. We scrutinized the variations in the ferroelectric properties of HZO films across different oxygen vacancy concentrations by integrating the findings from ferroelectric performance tests. Additionally, we elucidated the mechanism underlying the influence of oxygen vacancies on the coercive field and polarization properties of HZO ferroelectric films through the first-principles density functional theory (DFT) calculations. Finally, to study the impact of oxygen vacancies on the practical application of HZO ferroelectric synaptic devices, leveraging the plasticity of the ferroelectric polarization, we constructed a multilayer perceptron (MLP) network. We simulated its recognition accuracy and convergence speed under different oxygen vacancy concentrations in the MNIST recognition task. [ABSTRACT FROM AUTHOR]

Layered perovskite-structured thin films of SrBi2Ta2O9 (SBT) were successfully deposited onto highly oriented pyrolytic graphite substrates using a pulse laser deposition technique, resulting in an atomic structure identical to that of the graphene surface. The SBT thin films exhibited enhanced ferroelectric and dielectric properties when the substrate temperature was slightly lowered, attributed to the improvement in a-oriented crystallinity. Due to the enhancement in a-oriented crystallinity, the SBT thin films exhibited an improved remanent polarization of approximately 12.3 μC/cm2 and an enhanced remanent piezoelectric coefficient of approximately 13.6 pm/V. The observations of ferroelectric domain structures using piezoresponse force microscopy confirmed a slight increase in domain boundary energy for SBT thin films with enhanced a-oriented crystallinity. [ABSTRACT FROM AUTHOR]

The sublayer thickness of superlattices, as a key factor affecting lattice integrity, interface defects, and strain, deserves in-depth studies about its impact on improving ferroelectric properties. This study described and analyzed the performance of HfO2/ZrO2 superlattices with various sublayer thicknesses. It can be concluded that the structure of the thicker layers will guide the trend of the phase composition of the entire device: when ZrO2 layers are thicker, the superlattices will exhibit antiferroelectricity due to the higher content of the tetragonal phase (t-phase); when HfO2 layers become thicker, the fraction of the monoclinic phase (m-phase) will increase, leading to a decrease in ferroelectricity and an increase in leakage current. In this way, the device with a 1:1 HfO2/ZrO2 thickness ratio was optimized to have the largest remanent polarization and the lowest leakage current. Maintaining the same thickness ratio of the HfO2/ZrO2 superlattices, it was found that HfO2/ZrO2 superlattices with thinner sublayers exhibited a larger remanent polarization (Pr) value due to increased interlayer distortion. On the contrary, the thicker sublayers reduced leakage current, which was beneficial for improving the device lifespan. [ABSTRACT FROM AUTHOR]

High-quality epitaxial BiFeO3 (BFO) films were grown on (001)-, (110)- and (111)-oriented Nb:SrTiO3 (NSTO) substrates by pulsed laser deposition. The type of domain structure can be modulated using BFO ferroelectric films with different crystalline orientations. The ON/OFF ratios obtained in (001)-, (110)- and (111)-oriented Au/BFO/NSTO ferroelectric tunnel junctions (FTJs) are 6 × 103, 3 × 104 and 2 × 105, respectively. Analysis of the I – V curves of tunnelling current and average BFO ferroelectric barrier height proves that the polarization intensity of the BFO films modulates both the ferroelectric barrier and the Schottky barrier profile, which further influences the electronic tunnelling probability in BFO FTJs. This work will be useful for further study on achieving a giant ON/OFF ratio and developing insights into the barrier profile and transport mechanism of metal/ferroelectric/semiconductor-type FTJs. [ABSTRACT FROM AUTHOR]

BiFe 1-2 x Zn x Co x O 3 (BFZCO) thin films (x = 0 %, 1 %, 2 %, 3 %, 4 %, 5 %) were deposited on FTO/glass substrates by sol-gel method. We systematically investigated the effects of equal doping of (Zn, Co) on the crystal microstructure, leakage current, leakage mechanism, and ferroelectric properties of BFZCO thin films. The XRD patterns indicate that all samples matched the chalcogenide structure without any impurity phases. The BiFe 0.96 Zn 0.02 Co 0.02 O 3 (BFZCO-2) film exhibited a large residual polarization (2 P r = 339.9 μC/cm2) at an electric field strength of approximately 2000 kV/cm. The curve of leakage current density shows that equal doping of (Zn, Co) can considerably decrease the leakage current of BFO thin films at low electric fields. Furthermore, the mechanism of leakage conduction has shifted from Ohmic conduction at low electric fields to SCLC conduction at high electric fields. [ABSTRACT FROM AUTHOR]

Ferroelectric HfO2-based thin films have attracted increasing interest due to their potential applications in nonvolatile memory areas. However, their unique properties, such as imprint, lead to serious reliability issues. In this study, the origin of imprint behavior is investigated by using TiN/Hf0.5Zr0.5O2 (10 nm)/TiN MFM capacitors. By modulating the internal electric field during imprint, we discover that charge injection/de-trapping in metal–ferroelectric interfaces plays an essential role in imprint behavior rather than charge movement inside the FE layer. The asymmetric shift of the coercive field is also discussed, which is attributed to nonlinear interaction between polarization's bound charges and the electrode's screening charges. This suggests that controlling interface quality should effectively suppress imprint in HfO2-based thin films. [ABSTRACT FROM AUTHOR]

The present study elucidates the role of annealing with electric field on lamellar crystalline structure and molecular orientation of polymer chains in ferroelectric copolymer (P(VDF‐TrFE)) and ferroelectric terpolymer (P(VDF‐TrFE‐CFE)) spin‐coated thin films. The ferroelectric polymer thin films annealed under an electric field support the growth of nanostructure with an “edge‐on” lamellar crystalline structure having in‐plane molecular chain orientation. The poled P(VDF‐TrFE) thin films have higher remnant polarization (Pr) ≈6.2 µC cm−2 and saturation polarization (Ps) ≈8.2 µC cm−2 at an applied electric field of 250 MV/m compared to unpoled thin films having Pr ≈4.7 and Ps ≈6.2 µC cm−2. Also, poled P(VDF‐TrFE) thin films show lower coercive field (Ec) ≈94 MV/m compared to an unpoled thin film having Ec ≈105 MV/m. Similarly, poled PVDF‐TrFE‐CFE thin film shows better ferroelectric properties having Pr ≈0.4 and Ps ≈5.7 µC cm−2 at an applied electric field of 200 MV m−1 compared to unpoled thin films having Pr ≈0.4 and Ps ≈4.1 µC cm−2. The storage energy efficiency of unpoled and poled P(VDF‐TrFE‐CFE) thin films is measured to be ≈75% and 80%. Annealing of ferroelectric P(VDF‐TrFE) polymer thin films under an electric field demonstrates improved ferroelectric and electroactive properties. [ABSTRACT FROM AUTHOR]

Freestanding ferroelectric thin films, free from substrate constraints, present a platform for advanced strain engineering owing to their exceptional mechanical flexibility. The strain state in freestanding ferroelectric thin films can be modulated through various mechanical deformations, enabling precise control over the physical properties and performance of the ferroelectric films. Here, we utilized phase-field simulations to explore the polarization evolution and switching behavior of freestanding BaTiO3 ferroelectric thin films under bending and shear strains. Our findings reveal that shear strain transforms flux-closure domains into a monoclinic phase, increasing the coercive field, maximum polarization, and remanent polarization, thereby broadening the ferroelectric polarization–electric field hysteresis loop. The underlying mechanism involves the competition between elastic and electrostatic energies, which becomes more pronounced with increasing shear strain. Additionally, this contrasts with the modulation of domain structures by bending strain, which causes a rightward shift in the ferroelectric polarization–electric field hysteresis loop due to the flexoelectric fields generated by bending deformation. These findings provide profound insights into the strain effects in ferroelectrics, highlighting the complex interplay between mechanical deformation and electrical response. The ability to manipulate domain structures and polarization behaviors through controlled mechanical strains paves the way for designing high-performance, flexible ferroelectric devices. [ABSTRACT FROM AUTHOR]

Exploring the unique physical properties of oxide perovskites necessitates their growth on diverse single‐crystal substrates. The thin‐film growth of perovskite SrMnO3 (SMO) has been a particular focus of research due to its emerging room‐temperature multiferroicity. Herein, the epitaxial thin films of (110)‐oriented SMO are grown on the piezoelectric (110)‐oriented (1–x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN‐PT) substrate. The effects of the thickness and oxygen annealing on the crystal structure, stoichiometry, and ferroelectric properties of the SMO thin film are systematically investigated. The tensile strain produced by the lattice mismatch between the bulk SMO and the PMN‐PT substrate causes an expansion of the c‐lattice parallel to the in‐plane direction of the substrate. The films show larger a‐, b‐, and c‐lattice parameters than the bulk material, resulting in volume expansion of the unit cell. This lattice expansion is attributed to the generation of oxygen vacancies driven by the reduced formation energy caused by the high elastic strain. Piezoelectric force microscopy reveals that the SMO film contains domains with strain‐mediated in‐plane and vacancy‐mediated out‐of‐plane polarization. Furthermore, the piezoelectric response of the PMN‐PT substrate effectively modulates the biaxial tensile strain in the SMO film, offering a potential strategy for controlling the crystal structure and ferroelectric properties of SMO. [ABSTRACT FROM AUTHOR]

Recent studies have highlighted the ferroelectric potential of ZrO 2 thin films, which offer advantages over HfO 2 -based ferroelectric materials, such as lower thermal budget and greater natural abundance. In this research, pure ZrO 2 ferroelectric thin films were fabricated on Si substrates using chemical solution deposition with all-inorganic precursors. We explored the impacts of film thickness and HfO 2 seed layers on phase transition and ferroelectric properties. Notably, an 11 nm thick ZrO 2 film exhibited ferroelectric behavior with a remanent polarization of 12.6 μC/cm2. Due to the combined effects of tensile stress and surface energy, the increase in thickness to 30 nm led to a phase transition from the orthorhombic phase to the monoclinic phase and a resultant decrease in remanent polarization. Additionally, the introduction of a HfO 2 seed layer facilitated the crystallization of the ferroelectric o-phase, enhancing the remanent polarization to 16.5 μC/cm2 in our ∼8 nm thick ZrO 2 thin film with a ∼2 nm thick HfO 2 seed layer. These findings provide valuable insights into optimizing ferroelectric properties in ZrO 2 thin films through phase transition control. [ABSTRACT FROM AUTHOR]

This document discusses the field of nonlinear nanophotonics, which has seen significant advancements due to the development of advanced nanofabrication technologies. Nonlinear nanophotonics has applications in various fields such as biomedical imaging, environmental sensing, secure communications, and quantum computing. The document includes research papers and review papers that cover topics such as second harmonic generation, gallium phosphide in nanophotonics, advancements in nonlinear photonics on integrated platforms, nonlinear optical effects induced by high-power THz sources, and the enhancement of nonlinear optical properties in various materials. The document also explores the use of 2D materials, bound states in the continuum, and nonlinear nanophotonics in quantum information processing and all-optical modulators. Overall, this special issue provides valuable insights into the current research and applications in the field of nonlinear nanophotonics. [Extracted from the article]

Chemical Solution Deposition enables low‐cost fabrication of ferroelectric HfO2 films suitable for piezoelectric applications. Control of processing parameters is of utmost importance to obtain high‐quality functional films. However, the impact of the annealing atmosphere on ferroelectric properties of solution‐processed HfO2 films is not clear. In this work, the influence of annealing atmosphere and growth methods on orientation, density and electrical properties of La:HfO2 films is studied. The 45 nm‐thick films are grown by two routes, conventional (crystallization of the final 45 nm‐thick film) and layer‐by‐layer (intermediate crystallizations of 5 nm‐thick films). Annealing is performed in N2:O2 and Ar atmosphere. Films grown by layer‐by‐layer method in an oxygen‐rich atmosphere tend to have higher density (87% of theoretical density) and remanent polarization (15 µC cm–2) than the conventional films (density and remanent polarization of 80% and 7.5 µC cm‐2). Secondary ion mass spectrometry reveals higher amounts of carbon presence in the conventional films annealed in Ar. For layer‐by‐layer films, the ability to control the preferential out‐of‐plane orientation from (111) to (002) simply by changing the annealing atmosphere, is demonstrated. The results can guide the path toward high‐quality thicker films for piezoelectric applications. [ABSTRACT FROM AUTHOR]

Advances in flexible electronics are driving the development of ferroelectric thin‐film capacitors toward flexibility and high energy storage performance. In the present work, the synergistic combination of mechanical bending and defect dipole engineering is demonstrated to significantly enhance the energy storage performance of freestanding ferroelectric thin films, achieved through the generation of a narrower and right‐shifted polarization‐electric field hysteresis loop. The recoverable energy storage density of freestanding PbZr0.52Ti0.48O3 thin films increases from 99.7 J cm−3 in the strain (defect) ‐free state to 349.6 J cm−3, marking a significant increase of 251%. The collective impact of the flexoelectric field, bending tensile strain, and defect dipoles contributes to this enhancement. The demonstrated synergistic optimization strategy has potential applicability to flexible ferroelectric thin film systems. Moreover, the energy storage properties of flexible ferroelectric thin films can be further fine‐tuned by adjusting bending angles and defect dipole concentrations, offering a versatile platform for control and performance optimization. [ABSTRACT FROM AUTHOR]

Flexible PbZr0.52Ti0.48O3 (PZT) films have a wide application prospect in wearable devices. In this work, PZT films were fabricated on LaNiO3–based Si substrates and mica substrates, respectively. The effects of Si substrates and mica substrates on the dielectric and ferroelectric properties of PZT films were studied. The stability of PZT films on different substrates was discussed by controlling temperature and frequency. The optimal annealing temperature for preparing PZT films on LaNiO3–based Si substrates and mica substrates is 750 °C. The dielectric and ferroelectric properties of PZT films vary with the substrates. The diffraction peak of PZT films deposited on mica substrates shifted to the left compared with that deposited on Si substrates, due to difference of the expansion coefficients. The as–prepared PZT films exhibit a good ferroelectric property at a frequency in the range of 100 Hz~1000 Hz. Moreover, PZT films deposited on mica substrates have larger remanent polarization values and coercive fields than PZT films deposited on Si substrates. With the elevation in temperature, the dielectric constant of PZT films gradually enhance. And as–prepared PZT films at an annealing temperature of 750 °C have a better dielectric temperature stability. PZT films grown on Si substrates exhibit more excellent dielectric temperature stability than that of PZT films grown on mica substrates. [ABSTRACT FROM AUTHOR]

For ferroelectric (FE) thin films, working in the harsh environment of a high electric field (E) or high temperature (T) remains a great challenge. As a post-treatment approach, dead-layer engineering exhibits a certain generality and could improve the dielectric strength (Eb) via depositing a specially designed artificial "dead-layer" on most of the as-prepared FE thin films. However, physical essence of the artificial dead-layer needs further analysis. Great challenges are the abundant and complicated conduction mechanisms in the FE-based thin films and the lack of adequate research on modulating these conduction mechanisms by this artificial dead-layer. As a vital part of the conduction mechanisms, electron injection can be easily triggered under E and thermal excitation that almost appeared in all FE-based thin films. Here, the ultrathin artificial dead-layer of Ca0.2Zr0.8O1.8 (CSZ) was used to restrain multiple electron injection in low-Eb LaNiO3/Ba0.58Sr0.42TiO3 (LNO/BST) FE thin films, including thermal emission and tunneling effect, under a high E and T, even under an opposite E. It was found that the suppressing effect on the multiple electron-injection mechanisms via the artificial dead-layer mainly comes from its wall-like energy-barrier structure, which is composed of two opposite and high interface energy barriers (BST/CSZ: 2.95 eV, CSZ/Au: 3.92 eV) and a wide depletion layer. The generality of protecting the ferroelectric thin films from electron injection via the artificial dead-layer was discussed. [ABSTRACT FROM AUTHOR]