Growth and ferroelectric properties of SrBi2Ta2O9 thin films on highly oriented pyrolytic graphite substrates with atomic structure like graphene surface.

Layered perovskite-structured thin films of SrBi2Ta2O9 (SBT) were successfully deposited onto highly oriented pyrolytic graphite substrates using a pulse laser deposition technique, resulting in an atomic structure identical to that of the graphene surface. The SBT thin films exhibited enhanced ferroelectric and dielectric properties when the substrate temperature was slightly lowered, attributed to the improvement in a-oriented crystallinity. Due to the enhancement in a-oriented crystallinity, the SBT thin films exhibited an improved remanent polarization of approximately 12.3 μC/cm2 and an enhanced remanent piezoelectric coefficient of approximately 13.6 pm/V. The observations of ferroelectric domain structures using piezoresponse force microscopy confirmed a slight increase in domain boundary energy for SBT thin films with enhanced a-oriented crystallinity. [ABSTRACT FROM AUTHOR]