Fabrication and characterization of HfxAl(1-x)Oy ceramic targets and thin films by RF sputtering.

The potential of HfO 2 as a memory semiconductor material with ferroelectric properties in thin-film deposition has been recently analyzed. In this study, the preparation, composition, and physical properties of Al-doped hafnium oxides were analyzed. Hf x Al (1- x) O y (HAO) [ x = 0.33, 0.5, and 0.67] powders were prepared by controlling the ratio of Hf to Al and using ball milling. The HAO powder was calcined at 1000 °C in a furnace and then sintered in a temperature range of 1000–1600 °C by a solid-state reaction method to fabricate high-quality targets with high densities. The density and crystal size increased with the sintering temperature. The 1600-°C Hf 0.67 Al 0.33 O y target was optimal for thin-film deposition. In addition, the target properties were affected by an increase in the HfO 2 content x. The crystal structures and sizes, surface free energies, contact angles, and band gaps of the HAOs were evaluated to analyze their potential as high- k dielectric materials. HAO is a promising high- k dielectric and memory material, valuable for further studies on ferroelectric gate oxide materials. This study contributes to the increasing number of studies on the ferroelectricity of HfO 2 thin films and provides a fundamental understanding of this material and its potential for novel device applications. [ABSTRACT FROM AUTHOR]