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The physical reason behind the very high correlation between the drain and induced gate noise in a lateral asymmetric channel MOSFET (LAC-MOSFET) is discussed. The high correlation between the drain and gate noise is due to the strong localization of the drain and gate impedance fields (IFs).

An analytical nonstationary extension of the standard low-frequency noise model, which is valid for any kind of periodic excitation, is presented.

An analytical noise modeling methodology for lateral nonuniform MOSFET is presented. Findings reveal that the vector impedance field becomes position and bias dependent due to the presence of lateral nonuniformity.

The application of small-signal partitioning concept to lateral asymmetric MOSFET for obtaining capacitances and conductances in the presence of field-dependent mobility is discussed.

The flatband perturbation technique is used extensively to study and model low-frequency noise in a MOS transistor, and the method is considered valid even in nonohmic regions. Results demonstrate that this methodology is valid only in an ohmic region (drain-to-source voltage tending to be zero) and establish its link with the Langevid method, the most fundamental noise calculation methodology.

An analytical expression of the small-signal nonquasi-static (NQS) parameters are derived using a charge-based model that includes velocity saturation and that is applicable in all regions of inversion. The model predicts the anomalous high-frequency behavior of transadmittance in saturation, and can be easily implemented on top of an existing long-channel NQS model.

A demonstration on some methodologies adapted to incorporate mobility degradation and show that for any arbitrary mobility model all the methods yield the same result for drain and induced gate noise current. The equivalence between all the three most important noise calculation methodologies without the need for constant mobility assumption is demonstrated.

A compact charge-based description of small-signal non-quasi-static (NQS) effects in the intrinsic metal oxide semiconductor (MOS) transistor is presented. A simple equivalent circuit can be described by only two frequency-dependent generic functions. The theoretical approach is confirmed by measurements.

The authors examine efficient parameter extraction and accurate modeling for submicrometer transistors. Topics include small-signal equivalent circuits, saturation regions, and gate resistance.

This paper suggests several approaches for determining the transient stability of a power network by using an analog VLSI chip for simulating the system behavior. The main advantages of using this method are the much sorter computation time and lower complexity compared to the currently used methods, which are based on numerical calculations or discrete analog emulators. Index Terms: Analog computation, low power, power networks, transient stability.

An analytical solution of sidewall capacitances is presented in the presence of a gate underlap region. It is found that a geometry-dependent quantity gamma determines the scaling of the problem, and this quantity will be very useful for the problems where the main intention is to optimize the dimensions for a fixed value of capacitance.