Compact modeling of anomalous high-frequency behavior of MOSFET's small-signal NQS parameters in presence of velocity saturation

Authors :: Roy, Ananda S.
Enz, Christian C.
Sallese, Jean-Michel
Source :: IEEE Transactions on Electron Devices. Sept, 2006, Vol. 53 Issue 9, p2044, 7 p.
Publication Year :: 2006
Abstract: An analytical expression of the small-signal nonquasi-static (NQS) parameters are derived using a charge-based model that includes velocity saturation and that is applicable in all regions of inversion. The model predicts the anomalous high-frequency behavior of transadmittance in saturation, and can be easily implemented on top of an existing long-channel NQS model.

Subjects :: Complementary metal oxide semiconductors -- Usage
Integrated circuits -- Design and construction
Semiconductor chips -- Design and construction
Circuit design -- Analysis
Standard IC
Circuit designer
Integrated circuit design
Business
Electronics
Electronics and electrical industries

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