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1. A Sensitivity Study of Butler Matrices: Application to an SIW Extended Beam Matrix at 28 GHz

Author

Giuseppe Acri, Jordan Corsi, Florence Podevin, Emmanuel Pistono, Philippe Ferrari, and Luigi Boccia

Subjects
Butler matrix, beam forming network, extended beam, sensitivity study, millimeter-wave, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

In this paper, a detailed sensitivity study of Butler matrices is proposed. In particular, a Monte Carlo analysis is carried out on each block constituting the matrix to estimate its impact on the overall performance. The isolation level of the crossover transmission path is hence proved to be a critical part of the Butler matrix design. As it will be shown using both full-wave analysis and analytical equations, an isolation of 30 dB should be reached in order to guarantee proper operation of the matrix. These outcomes were experimentally proved by designing two 28 GHz Substrate Integrated Waveguide (SIW) $4\times 4$ Butler matrices as a demonstrator in the framework of the extended beam concept. Thanks to the crossover transmission path high isolation, the measured results show an insertion loss of 2.13±0.7 dB and a maximum output progressive phase deviation of −15.5° and +16.9°. Based on 0.5 $\lambda $ _0 evenly spaced isotropic antennas, those results enable a spatial coverage from −89.4° to 83.1° with a maximum loss of 2.2 dB and a ripple of 1.1 dB for the array factor as compared to the −48.6°/+48.6° spatial coverage, 3.7-dB of ripple of the conventional $4\times 4$ Butler matrix array.

Published
2022
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10. Electrical modeling of spin-torque diodes used as radio frequency detectors: a step-by-step methodology for parameter extraction

Author

Imadeddine Bendjeddou, Mafalda Jotta Garcia, Ahmed Sidi el Valli, Artem Litvinenko, Vincent Cros, Ursula Ebels, Alex Jenkins, Ricardo Ferreira, Roberta Dutra, Dominique Morche, Emmanuel Pistono, Sylvain Bourdel, Yannis Le Guennec, Florence Podevin, Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), GIPSA Pôle Géométrie, Apprentissage, Information et Algorithmes (GIPSA-GAIA), Grenoble Images Parole Signal Automatique (GIPSA-lab), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), International Iberian Nanotechnology Laboratory (INL), and ANR-18-CE24-0012,SPINNET,La spintronique microondes pour les réseaux de capteurs sans fils(2018)

Subjects
parameter extraction, Radiation, PACS 8542, electrical modeling, RF-to-dc conversion, Electrical and Electronic Engineering, spin-torque diodes (STDs), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Condensed Matter Physics, radio frequency (RF) detector
Abstract

International audience; In this article here below, we present an electrical model for nanoscale spintronic radio frequency (RF) detectors called spin-torque diodes (STDs). A complete methodology for model parameter extraction is proposed. An equivalent electrical circuit for STD is derived and includes a modeling of the device resistance nonlinearity together with the STD effect. A detailed step-by-step methodology is presented to extract the model parameters using conventional dc measurements, RF scattering parameters (S -parameters), continuous wave (CW), and power characterizations. After parameter extraction, a comparison with measurements of a single STD successfully validates the model. Finally, the proposed STD electrical model is used to anticipate the behavior of a two-STD-based RF detector architecture. Simulation results highlight the interest of the proposed modeling approach to investigate suitable RF detector architectures to enhance RF-to-dc conversion efficiency for single or multiband RF detection.

Published
2023

12. A 28‐GHz reconfigurable 1‐bit substrate‐integrated‐waveguide based phase shifter

Author

Philippe Ferrari, Giuseppe Acri, Emmanuel Pistono, Luigi Boccia, and Florence Podevin

Subjects
QC501-766, Waveguide (electromagnetism), Materials science, business.industry, substrate integrated waveguides, phase shifters, TK5101-6720, Substrate (printing), Electricity and magnetism, Bit (horse), Hardware_INTEGRATEDCIRCUITS, Telecommunication, Optoelectronics, Hardware_ARITHMETICANDLOGICSTRUCTURES, antenna phased arrays, Electrical and Electronic Engineering, business, Phase shift module
Abstract

A switched‐line substrate integrated waveguide 1‐bit phase shifter is designed and measured at 28 GHz. Reconfigurability is achieved through a set of floating metallized vias whose connection to the waveguide top and bottom layers can be controlled using PIN diodes. The reconfigurable vias are used to dynamically create alternative paths having different phase delays. A three‐metal layer printed circuit board stack‐up is employed to fully integrate the diode biasing network and to ease the routing of the bias signal. The high integration of the proposed configuration makes it well suited for the implementation of reconfigurable Butler matrices. The phase shift offset between the two states of this digital 1‐bit phase shifter equals 262° at 28 GHz, leading to a measured figure of merit of 161°/dB, and input 1‐dB compression point over 20 dBm. The total area is 13.72 × 10.9 mm without feeding lines and bias.

Published
2021

13. 77.3-GHz Standing-Wave Oscillator Based on an Asymmetrical Tunable Slow-Wave Coplanar Stripline Resonator

Author

Ekta Sharma, Philippe Ferrari, Leonardo G. Gomes, Antonio Augusto Lisboa de Souza, Gustavo P. Rheder, Sylvain Bourdel, Ariana L. C. Serrano, and Emmanuel Pistono

Subjects
Standing wave, Physics, Resonator, CMOS, business.industry, Phase noise, Optoelectronics, dBc, Figure of merit, Electrical and Electronic Engineering, Inductor, business, Stripline
Abstract

In this paper, the design of a 77.3 GHz Standing-Wave oscillator (SWO) is presented. The proposed SWO relies on the distribution of varactors along an asymmetrical slow-wave coplanar stripline, which enables the improvement of the quality factor of the tunable resonator, resulting in superior performance in terms of phase noise and DC-to-RF efficiency. The design methodology, based on the use of analytical models and abaci, is presented in detail and applied to a design in a 55-nm CMOS technology. With a core consumption of 15.1 mW, the proposed SWO operates from 76.09 GHz to 78.60 GHz and presents a phase noise of −115.1 dBc/Hz at 10 MHz offset, leading to a Figure of Merit (FOM) of −181 dBc/Hz. The DC-to-RF efficiency obtained is 3.1%.

Published
2021

14. mm-Wave Through-Load Element for On-Wafer Measurement Applications

Author

Sylvie Lepilliet, Philippe Ferrari, Loic Vincent, Christophe Gaquiere, Olivier Occello, Emmanuel Pistono, Abdelhalim A. Saadi, Marc Margalef-Rovira, Vanessa Avramovic, Manuel J. Barragan, Sylvain Bourdel, Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), NXP Semiconductors [France], Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
Through-load, transfer-switch millimeter-wave, attenuator, 02 engineering and technology, BiCMOS, law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, slow-wave, Electrical and Electronic Engineering, Physics, Attenuator (electronics), on-wafer, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), Transistor, Electrical engineering, Transfer switch, 3-dB coupler, [SPI.TRON]Engineering Sciences [physics]/Electronics, Return loss, business, Voltage
Abstract

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50- $\Omega $ load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50- $\Omega $ load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50- $\Omega $ load connection.

Published
2021

15. Circular Polarized Square Slot Antenna Based on Slow-Wave Substrate Integrated Waveguide

Author

Philippe Ferrari, N. Corrao, Emmanuel Pistono, and Anh Tu Ho

Subjects
Waveguide (electromagnetism), Materials science, Physics::Instrumentation and Detectors, business.industry, 020206 networking & telecommunications, Slot antenna, 02 engineering and technology, Polarization (waves), Microstrip, Radiation pattern, Microstrip antenna, Optics, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Antenna (radio), business, Circular polarization
Abstract

The design of a compact substrate integrated waveguide (SIW) cavity-backed circular-polarized antenna using a slow wave structure is proposed in PCB technology. Based on a multilayer substrate, this topology includes internal metallized blind via holes connected to the bottom conductive plane, inducing the physical separation of electric and magnetic fields in the SIW cavity. Hence, a slow wave effect is obtained, allowing a 47% reduction of the antenna cavity in comparison with its classic SIW antenna counterpart. Moreover, by asymmetrically inserting an inductive via into the patch region, a degenerated mode allows both a circular polarization and an enlargement of impedance bandwidth. Measurements and simulations are in good agreement in terms of radiation pattern and circular polarization with a return loss of 15 dB and a gain of 4.8 dBic.

Published
2021

16. On the Effect of Field Spatial Separation on Slow Wave Propagation

Author

Darine Kaddour, Jordan Corsi, Vincent Puyal, Emmanuel Pistono, Matthieu Bertrand, and Philippe Ferrari

Subjects
Physics, Waveguide (electromagnetism), Radiation, Field (physics), Wave propagation, Attenuation, Magnetic separation, Nanowire, 020206 networking & telecommunications, 02 engineering and technology, Dielectric, Condensed Matter Physics, Magnetic field, Computational physics, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering
Abstract

This article introduces a description of the slow wave effect based on the analysis of spatial field separation. Considering an ideal parallel-plate framework, approximate analytical expressions are derived for the slow wave factor (SWF), as well as dielectric attenuation. In particular, it is shown that the SWF can be related to the spatial distribution of both electric and magnetic fields. It is also demonstrated that the dielectric attenuation increases by the same factor as the velocity reduces. The derived principles are applied to a study case consisting of a parallel-plate waveguide partially filled with vertically grown metallic nanowires.

Published
2020

17. Radio Receivers based on Spin-Torque Diodes as Energy Detectors

Author

I. Bendjeddou, M. Jotta Garcia, Sylvain Bourdel, Y. Le Guennec, A. Sidi El Valli, Emmanuel Pistono, A. N. Litvinenko, Romain Lebrun, P. Bortolotti, Dominique Morche, Ricardo Ferreira, Florence Podevin, Ursula Ebels, A. S. Jenkins, Vincent Cros, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), GIPSA Pôle Géométrie, Apprentissage, Information et Algorithmes (GIPSA-GAIA), Grenoble Images Parole Signal Automatique (GIPSA-lab), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), GIPSA-Services (GIPSA-Services), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), International Iberian Nanotechnology Laboratory (INL), and ANR-18-CE24-0012,SPINNET,La spintronique microondes pour les réseaux de capteurs sans fils(2018)

Subjects
Computer science, Radio Communication, Detector, Radio receiver, Keying, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Magnetic tunnel junctions, RF-DC converters, Rectifying effect, law, Electronic engineering, Torque, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Antenna (radio), [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, Energy (signal processing), Diode, Spin-½
Abstract

International audience; Radiofrequency receivers based on energy detection usually require bulky and costly antenna filters. A promising alternative comes from spin-torque diodes that inherently provide both rectifying and filtering effects. This work proposes a behavioral electrical model, extracted from measurement results, that considers both the non-linearity of the magnetic junction and its parasitic. This model has been used at system-level to design a frequency-shift keying receiver

Published
2021

18. Mm-wave single-pole double-throw switches: HBT-vs MOSFET-based designs

Author

Loic Vincent, Philippe Ferrari, A. A. Lisboa de Souza, M. Margalef-Rovira, C. Gaquiere, Emmanuel Pistono, Manuel J. Barragan, Florence Podevin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Universidade Federal da Paraiba (UFPB), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Division of Graduate Education, DGE, European Commission, EC, TARANTO, Electronic Components and Systems for European Leadership, ECSEL, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Federal University of Paraíba (UFPB), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
Physics, BiCMOS, mm-Wave, business.industry, Heterojunction bipolar transistor, Bandwidth (signal processing), Bicmos technology, SPDT, [SPI]Engineering Sciences [physics], S-CPW, HBT, MOSFET, Return loss, Insertion loss, Optoelectronics, slow-wave, Center frequency, business
Abstract

International audience; This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.

Published
2021

19. BenzoCycloButene-based in-Package Substrate Integrated Waveguides for sub-THz Applications

Author

Frédéric Aniel, Philippe Ferrari, Nicolas Zerounian, Loic Vincent, Florence Podevin, Giuseppe Acri, A.-S. Grimault-Jacquin, Luigi Boccia, Emmanuel Pistono, BEN TITO, Laurence, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica [Calabria] (DIMES), Università della Calabria [Arcavacata di Rende] (Unical), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre Interuniversitaire de Micro-Electronique (CIME), and Institut National Polytechnique de Grenoble (INPG)

Subjects
Materials science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, packaging, 02 engineering and technology, law.invention, chemistry.chemical_compound, law, Benzocyclobutene, 0202 electrical engineering, electronic engineering, information engineering, frequency measurement, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, substrates, attenuation, passive circuit, Electronic circuit, business.industry, Attenuation, 020208 electrical & electronic engineering, Q-factor, 020206 networking & telecommunications, CMOS, chemistry, PACS 85.42, Attenuation coefficient, Q factor, Interposer, Optoelectronics, attenuation measurement, business, Waveguide
Abstract

International audience; This paper introduces an experimental characterization of substrate integrated waveguide (SIW) components integrated in a benzocyclobutene-based interposer for WR10-band applications. High performance SIWs were experimentally validated, with a measured attenuation constant of 0.39 dB/mm and a quality factor of 27 at 90 GHz. The attenuation constant remains equal to 0.4 dB/mm between 85 GHz and 110 GHz and the quality factor reaches 40 in the upper end of the band. These results show the benefits offered by using benzocyclobutene 3D packaging for the realization of high performance passive circuits with lower cost and higher electrical performance as compared to standard CMOS technologies and concurrent packaging technologies.

Published
2021

20. ESD mm-wave-circuit protection: 3-dB couplers

Author

Géraldine Pelletier, Christophe Gaquiere, Johan Bourgeat, Jean-Marc Duchamp, Sylvie Lepilliet, Vanessa Avramovic, Philippe Ferrari, Marc Margalef-Rovira, Manuel J. Barragan, Sylvain Bourdel, Emmanuel Pistono, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire de Génie Electrique de Grenoble (G2ELab ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Puissance - IEMN (PUISSANCE - IEMN), European Union through Toward Advanced BiCMOS NanoTechnology Platforms for RF Applications TARANTO (Grant Number: ECSEL JU GA 737454), General Directorate for Enterprises DGA France, PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Reliable RF and Mixed-signal Systems (TIMA-RMS)

Subjects
ESD protection, BiCMOS, 01 natural sciences, 7. Clean energy, 0103 physical sciences, couplers, Insertion loss, slow-wave, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Physics, Electrostatic discharge, business.industry, Attenuation, CMOS, Electrical engineering, mmwave, Electronic, Optical and Magnetic Materials, Human-body model, PACS 8542, Return loss, Node (circuits), business
Abstract

International audience; This article presents an innovative architecture for the implementation of an electrostatic discharge (ESD) protection for millimeter-wave (mm-wave) devices. The proposed architecture is based on the use of 3-dB couplers, whose coupled outputs have been shorted to the ground node. In order to reduce the physical dimensions of the 3-dB coupler and to reach the high coupling required for this application, the Coupled Slow wave CoPlanar Waveguides (CS-CPWs) architecture was favored. The demonstrator of the proposed system was fabricated in the STMicroelectronics 55-nm bipolar-cmos (BiCMOS) technology, demonstrating a return loss greater than 10 dB across the 50-160-GHz frequency range, an attenuation greater than 18 dB below 5 GHz, and a minimum insertion loss at 90 GHz of 0.55 dB. To prove the performance of the proposed solution, human body model (HBM) and charge device model (CDM) events were simulated at the input of the 3-dB coupler, showing that the proposed architecture effectively protects against these events while minimally impacting the RF path.

Published
2021

21. Miniaturization of Transmission Lines: Meandered Slow-wave CPWs

Author

Tadeu Mota-Frutuoso, Emmanuel Pistono, Manuel J. Barragan, Christophe Gaquiere, Marc Margalef-Rovira, Philippe Ferrari, Loic Vincent, Abdelhalim A. Saadi, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), This work has been funded by the European Union (ECSEL JU GA 737454: TowARds Advanced BiCMOS NanoTechnology platforms for RF applicatiOns -Taranto), and the General Directorate for Enterprises (DGE) in France., European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
010302 applied physics, Materials science, business.industry, CPW, 020206 networking & telecommunications, Ranging, transmission line, 02 engineering and technology, Dielectric, 01 natural sciences, Microstrip, Electric power transmission, CMOS, Transmission line, Q factor, PACS 85.42, 0103 physical sciences, mm-wave, 0202 electrical engineering, electronic engineering, information engineering, Miniaturization, Optoelectronics, slow-wave, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; This work presents novel transmission line structures based on Meandered Slow-wave CoPlanar Waveguides (MS-CPWs), aiming to achieve high miniaturization. As a proof-of-concept, these two kinds of transmission lines were designed and fabricated in the AMS 0.35 mu m CMOS technology together with classical straight and meandered microstrip lines. Measurement results from 70 kHz to 100 GHz of the fabricated transmission lines are presented. At 80 GHz, all the considered transmission lines present similar quality factors, ranging between 10 and 14. On the other hand, at this frequency, one of the developed MS-CPW presents an effective dielectric constant of 88, while the meandered microstrip exhibits an equivalent effective dielectric constant of 51, thus leading to higher compactness for the MS-CPW.

Published
2020

22. Potentialities of Air-Filled Substrate Integrated Waveguides based on Carbon Nanotubes in E-band

Author

Florence Podevin, Emmanuel Pistono, Phi Long Doan, Dominique Baillargeat, Jianxiong Wang, Stephane Bila, Joseph de Saxce, and Philippe Coquet

Subjects
Materials science, business.industry, E band, Context (language use), Substrate (electronics), Carbon nanotube, law.invention, law, Scattering parameters, Insertion loss, Optoelectronics, business, Waveguide, Beam (structure)
Abstract

This paper describes a classic architecture of a 4 × 4 Butler matrix in an innovative air-filled waveguide technology based on carbon nanotubes for beam pointing or beam tracking activities for 5G applications. The working frequencies concern particularly the E-band (71-86 GHz). The model used to simulate the waveguides, couplers and crossovers needed for the Butler matrix is presented as well as the expected results in terms of S parameters. The expected insertion loss is extremely low thanks to the considered technology, 0.02 dB/mm in E-band, making the carbon nanotubes very attractive in this context. The transitions that allow connecting the waveguides to planar transmission lines have also been developed and are introduced in this paper. Their maximum insertion losses are 0.6 dB for a matching better than 17 dB over the entire E-band.

Published
2020

23. Partially-Air-Filled Slow-Wave Substrate Integrated Waveguide in Metallic Nanowire Membrane Technology

Author

Emmanuel Pistono, Ariana L. C. Serrano, Jordan Corsi, Gustavo P. Rehder, Matthieu Bertrand, Leonardo G. Gomes, and Philippe Ferrari

Subjects
Waveguide (electromagnetism), Fabrication, Materials science, Nanoporous, business.industry, Nanowire, 020206 networking & telecommunications, 02 engineering and technology, Substrate (electronics), Membrane, Attenuation coefficient, 0202 electrical engineering, electronic engineering, information engineering, Interposer, Optoelectronics, business
Abstract

In this paper, the slow-wave effect and air-filled technology are combined to achieve a compact and efficient substrate integrated waveguide in the W-band. The MnM interposer technology, based on a nanoporous alumina membrane and copper nanowires, allowing a simple through substrate via fabrication, was used. A first partially-air-filled slow-wave substrate integrated waveguide was fabricated and measured, resulting in a reduction of the attenuation constant by 75% at 1.2 times the cut-off frequency as compared to the classic SIW, with Slimilar dimensions.

Published
2020

24. mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

Author

Christophe Gaquiere, Abdelhalim A. Saadi, Philippe Ferrari, Manuel J. Barragan, Sylvain Bourdel, Emmanuel Pistono, Marc Margalef-Rovira, Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Reliable RF and Mixed-signal Systems (TIMA-RMS), and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
Materials science, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 7. Clean energy, law.invention, law, 3-dB slow-wave coupler, in-situ reflectometer, mm-wave, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, NMOS logic, Load control switch, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), Transistor, 020206 networking & telecommunications, Biasing, switch, PACS 85.42, Power dividers and directional couplers, Optoelectronics, business, on-wafer calibration, Voltage
Abstract

International audience; In this paper, an innovative millimeter-wave (mm-wave) through-load switch for in-situ reflectometers and on-wafer calibration is proposed. This two-port device can switch between two states: (i) a through connection or (ii) a 50 Ω load for both of its ports. The through-load switch is composed of a 3-dB directional coupler and two nMOS transistors controlled through a biasing voltage applied to their gate. Measurement results of a 120-GHz 3-dB directional coupler are provided up to 145 GHz together with EM simulations and circuit-level simulations up to 220 GHz of the through-load switch. A wide bandwidth is obtained, from 73 GHz to 179 GHz, with limited insertion loss of 2 dB.

Published
2020

25. 77.8 GHz Standing-wave Oscillator Based on a Tuneable Slow-wave Coplanar Stripline Resonator

Author

Antonio Lisboa, Philippe Ferrari, Leonardo G. Gomes, Ekta Sharma, Emmanuel Pistono, and Sylvain Bourdel

Subjects
Materials science, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, 02 engineering and technology, 7. Clean energy, Standing wave, Resonator, Voltage-controlled oscillator, Quality (physics), Transmission line, Phase noise, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Stripline, Voltage
Abstract

This paper presents the design of a voltage controlled Standing-Wave Oscillator for applications in the E-band. A high quality factor tuneable Slow-wave Coplanar Stripline is used for the resonator. Varactors are distributed along the transmission line to mitigate the effect of their low Q-factor on the losses of the resonator. The Slow-wave Coplanar Stripline is asymmetrically sized to maximise the tuning range. The VCO achieves a measured phase noise of −114.9dBc at 80 GHz with 15mW power consumption and 3.3% continuous frequency tuning range.

Published
2020

26. Highly tunable high-Q inversion-mode MOS varactor in the 1-325-GHz band

Author

Abdelhalim A. Saadi, Manuel J. Barragan, Sylvain Bourdel, Christophe Gaquiere, Emmanuel Pistono, Cedric Durand, Marc Margalef-Rovira, Philippe Ferrari, Daniel Gloria, Loic Vincent, Sylvie Lepilliet, Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), 0.13039/501100011688-European Union through Toward Advanced BiCMOS NanoTechnology Platforms for RF Applications, Taranto (Grant Number: ECSEL JU GA 737454), PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
010302 applied physics, Materials science, business.industry, Electrical model, Semiconductor device modeling, 01 natural sciences, Capacitance, Bicmos technology, Electronic, Optical and Magnetic Materials, PACS 8542, CMOS, Logic gate, Q factor, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Varicap
Abstract

This article presents the design, experimental results, and modeling of an inversion-mode CMOS varactor integrated in the STMicroelectronics 55-nm BiCMOS technology. The device was characterized from 1 to 325 GHz, demonstrating high-quality factor at millimeter-waves. For instance, a quality factor of 7 at around 190 GHz for a tuning ratio ( ${C}_{\text {max}}/{C}_{\text {min}}$ ) greater than 4 was measured. This performance overpasses that of accumulation-mode varactors usually provided in CMOS technologies design kits, for frequencies beyond about 100 GHz. In addition, a small-signal electrical model is provided from 100 to 250 GHz.

Published
2020

27. Design of mm-wave slow-wave coupled coplanar waveguides

Author

Manuel J. Barragan, Sylvain Bourdel, Sylvie Lepilliet, Marc Margalef-Rovira, Jose Lugo-Alvarez, Florence Podevin, Emmanuel Pistono, Loic Vincent, Christophe Gaquiere, Alfredo Bautista, Abdelhalim A. Saadi, Philippe Ferrari, Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Advanced Silicon S.A. (AS), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Reliable RF and Mixed-signal Systems (TIMA-RMS), and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
coupling coefficient, Semiconductor device modeling, CMOS/BiCMOS technology, 02 engineering and technology, STRIPS, BiCMOS, Microstrip, law.invention, Optics, slow-wave concept, law, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Physics, Radiation, business.industry, Coplanar waveguide, 020206 networking & telecommunications, Condensed Matter Physics, PACS 8542, CMOS, Power dividers and directional couplers, business, Coupling coefficient of resonators, directional couplers
Abstract

International audience; This paper focuses on the design of high-performance Coupled Slow-wave CoPlanar Waveguide (CS-CPW) in CMOS technologies for the mm-wave frequency bands. First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two millimeter-wave backward directional 3-dB couplers are designed in a Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) 55-nm technology for 120 and 185-GHz operation, respectively. Simulation and experimental results demonstrate that the use of the CS-CPW concept leads to state-of-the-art performance, with a good agreement between the analytical model, electromagnetic simulations and measurement results.

Published
2020

28. Compact low-pass stepped impedance filters with enhanced out of band response

Author

H. Issa, Heba El-Halabi, S. Abou-Chahine, Emmanuel Pistono, Phillipe Ferrari, and Darine Kaddour

Subjects
010302 applied physics, Materials science, business.industry, Low-pass filter, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Printed circuit board, 0103 physical sciences, Out-of-band management, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, business, Electrical impedance, m-derived filter
Published
2017

29. Compact and performing transmission lines for mm-wave circuits design in advanced CMOS technology

Author

Luigi Boccia, Emmanuel Pistono, T. Lim, Philippe Ferrari, Giuseppe Acri, Florence Podevin, Erkan Nevzat Isa, N. Corrao, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica [Calabria] (DIMES), Università della Calabria [Arcavacata di Rende] (Unical), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Fraunhofer (Fraunhofer-Gesellschaft), and BEN TITO, Laurence

Subjects
CMOS process, coplanar waveguide, Computer science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Coplanar waveguide, Capacitive sensing, 020208 electrical & electronic engineering, Transmission line measurement, 020206 networking & telecommunications, 02 engineering and technology, Microstrip, Electric power transmission, CMOS, PACS 85.42, strip, Line (geometry), 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, attenuation, passive circuit, transmission line measurement, Electronic circuit
Abstract

International audience; This work presents a comparative study of conventional and slow wave (SW) transmission lines implemented in an advanced 22-nm CMOS process. Both microstrip (MS) and coplanar waveguides (CPW) were analysed through simulations and measurements. A classical SW approach was used for the implementation of the SW CPWs while the SW effect was generated in the MS lines using bed of nails integrated in the CMOS process. As a proof of concept, the proposed SW MS approach was employed to design a new artificial quarter-wave TL section. The proposed configuration was created loading a meandered MS line with open ended S-MS stubs acting as discrete capacitive loads. Results show that the proposed methodology offers an attractive form factor and good performance.

Published
2019

30. Forward-wave Directional Coupler based on Slow-wave Coupled Microstrip Lines

Author

Philippe Ferrari, Emmanuel Pistono, Duc-Long Luong, Didier Vincent, Giuseppe Acri, Ariana L. C. Serrano, Florence Podevin, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Laboratoire Hubert Curien [Saint Etienne] (LHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet [Saint-Étienne] (UJM)-Centre National de la Recherche Scientifique (CNRS), Laboratory of Microelectronics USP, and Universidade de São Paulo (USP)

Subjects
Physics, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), 020206 networking & telecommunications, 02 engineering and technology, Microstrip, Microstrip directional couplers, [SPI.TRON]Engineering Sciences [physics]/Electronics, Printed circuit board, Optics, Proof of concept, 0202 electrical engineering, electronic engineering, information engineering, Power dividers and directional couplers, Forward wave, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Electrical impedance, ComputingMilieux_MISCELLANEOUS
Abstract

This study presents the design of a forward-wave directional coupler based on slow-wave coupled microstrip lines realised in a multilayered printed circuit board technology. Thanks to the concept of slow-wave, a high difference between the even- and odd-mode phase velocities can be inherently achieved. Hence, by choosing adequate even- and odd-mode characteristic impedances close to 50 Ω, reduced-length forward couplers can be designed. As a proof of concept, a 0 dB forward coupler operating at 4.5 GHz is proposed. It exhibits a very high coupling of 0.56 dB at the centre frequency and a very large bandwidth of 43%, corresponding to 10 dB of isolation. A length miniaturisation of 84% is obtained as compared to the standard microstrip, leading to a total surface area of 0.132 λ g 2 , the smallest one reported so far.

Published
2019

31. A 3-dB Coupler in Slow Wave Substrate Integrated Waveguide Technology

Author

Darine Kaddour, Philippe Ferrari, Vincent Puyal, Matthieu Bertrand, Houssein El Dirani, Emmanuel Pistono, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Laboratoire de Conception et d'Intégration des Systèmes (LCIS)

Subjects
Coupling, Permittivity, Materials science, business.industry, Bandwidth (signal processing), 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, Homogeneous, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, Optoelectronics, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

This letter presents the design, simulation, and measurement results of a 3-dB coupler in slow wave (SW) substrate integrated waveguide technology at 11 GHz. It shows the possibility of reducing by 70% of the surface area without significant increase in insertion loss. The topology relies on a uniform distribution of blind via-holes, creating a distributed SW effect. It is therefore applicable to already existing coupling structures, in this case, the short-slot coupler. An equivalent homogeneous substrate defined by an increased permittivity is used to simplify the optimization of the structure. Finally, a good agreement is obtained between simulation and measurement.

Published
2019

32. Integrated Waveguides in Nanoporous Alumina Membrane for Millimeter-Wave Interposer

Author

Ariana L. C. Serrano, Julio M. Pinheiro, Darine Kaddour, Rogerio C. A. Alvarenga, Philippe Ferrari, Noureddine Kabbani, Matthieu Bertrand, Emmanuel Pistono, Leonardo G. Gomes, Vincent Puyal, Gustavo P. Rehder, Laboratory of Microelectronics USP, Universidade de São Paulo (USP), Laboratoire de Conception et d'Intégration des Systèmes (LCIS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Université Grenoble Alpes (UGA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Universidade de São Paulo ( USP ), Laboratoire de Conception et d'Intégration des Systèmes ( LCIS ), Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Université Grenoble Alpes ( UGA ), Équipe MIcro et Nanosystèmes pour les Communications sans fil ( LAAS-MINC ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Techniques of Informatics and Microelectronics for integrated systems Architecture ( TIMA ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Institut National Polytechnique de Grenoble ( INPG ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes ( UGA ), and Universidade de São Paulo = University of São Paulo (USP)

Subjects
Materials science, Nanoporous, business.industry, Coplanar waveguide, Nanowire, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, [ SPI.TRON ] Engineering Sciences [physics]/Electronics, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, law, Attenuation coefficient, Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, Interposer, Optoelectronics, Electrical and Electronic Engineering, Photolithography, business, Waveguide, ComputingMilieux_MISCELLANEOUS
Abstract

The integration of rectangular waveguides inside a nanoporous alumina membrane is proposed in this letter. The horizontal copper plates are realized by a photolithography process while the vertical connections are made of copper nanowires selectively grown inside the nanopores. The lateral wall position can, therefore, be freely adjusted. Waveguides in the $V$ -band (50–75 GHz) and the $W$ -band (75–110 GHz) were manufactured in a 50- $\mu \text{m}$ -thick membrane. For the measurement purpose, wideband transitions from a grounded coplanar waveguide to the waveguide were designed. The measured performance validates the propagation of guided waves with an attenuation constant of about 0.5–0.8 dB/mm in the operating bands, opening the way for the design of functionalized millimeter-wave alumina interposers.

Published
2019

33. A Millimeter-Wave Miniature Branch-Line Coupler in 22-nm CMOS Technology

Author

Luigi Boccia, Florence Podevin, T. Lim, E. N. Isa, Philippe Ferrari, Emmanuel Pistono, Giuseppe Acri, N. Corrao, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica [Calabria] (DIMES), Università della Calabria [Arcavacata di Rende] (Unical), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Fraunhofer (Fraunhofer-Gesellschaft), and Publica

Subjects
Frequency response, metals, magnetic field, 02 engineering and technology, solid state circuit, Microstrip, Transmission line, strip, 0202 electrical engineering, electronic engineering, information engineering, Miniaturization, Insertion loss, nail, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Physics, coupler, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, PACS 8542, CMOS, Extremely high frequency, Return loss, Optoelectronics, business, microstrip
Abstract

A 60-GHz innovative quadrature branch-line coupler is proposed in this letter. The device was implemented in a 22-nm CMOS process, from global foundries. The proposed design merges two miniaturization techniques. On the one hand, slow-wave microstrip (SW-MS) lines based on bed of nails are demonstrated in CMOS technology for the first time. On the other hand, the two quarter-wavelength MS line sections required for the branch-line coupler implementation are realized using the SW-MS transmission line configurations with different form factors. As a result, the achieved miniaturization versus electrical performance is very good as compared to the state-of-the-art. Design insights addressing the coupler dimensions and losses are discussed. The experimental assessment shows an adequate frequency response with amplitude and phase imbalance of 0.8 dB and 1.8° at 60 GHz, respectively. The measured insertion loss is 2.35 dB at 60 GHz and the return loss is better than 15 dB at any port (from 54 to 66 GHz). The isolation is better than 15 dB (from 51 to 68 GHz). The overall size of the coupler is 0.3 mm $\times $ 0.22 mm, which is equivalent to $0.06 \cdot \lambda _{0} \times 0.044 \cdot {\lambda }_{0}$ , at 60 GHz.

Published
2019

34. Design Optimization of Through-Silicon Vias for Substrate-Integrated Waveguides embedded in High-Resistive Silicon Interposer

Author

S. Tolunay Wipf, T. VoB, Mehmet Kaynak, Matthias Wietstruck, Steffen Marschmeyer, Emmanuel Pistono, Giuseppe Acri, C. Wipf, Florence Podevin, Matthieu Bertrand, Philippe Ferrari, Innovations for High Performance Microelectronics (IHP), Laboratoire d'Electronique et Electromagnétisme (L2E), Sorbonne Université (SU), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Silicon, Terahertz radiation, dielectric loss, chemistry.chemical_element, metals, 02 engineering and technology, Substrate (electronics), cutoff frequency, Silicon interposer, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, substrates, Resistive touchscreen, business.industry, Attenuation, silicon, 020206 networking & telecommunications, Cutoff frequency, chemistry, PACS 85.42, Optoelectronics, Dielectric loss, conductivity, business, through-silicon vias
Abstract

International audience; In this work, the optimization of TSVs for SIWs embedded in a high-resistive silicon interposer is demonstrated. EM simulations are performed to analyze and optimize important TSV design parameters enabling silicon interposer technologies with low-loss SIWs working at mm-wave/THz frequencies. A silicon interposer using high resistive silicon and TSVs is fabricated and SIWs are characterized working from 110-170 GHz with very low attenuation of ~0.5 dB/mm.

Published
2018

35. Miniaturized Humidity Sensor Based on a Partially Air-Filled Slow-Wave SIW Resonator

Author

Anh TuHo, Philippe Ferrari, Frederic Domingue, Majid Ndoye, and Emmanuel Pistono

Subjects
Permittivity, Materials science, business.industry, Frequency band, 010401 analytical chemistry, Humidity, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, 0104 chemical sciences, law.invention, Resonator, law, Electric field, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Relative humidity, business, Sensitivity (electronics), Waveguide
Abstract

This paper presents a compact substrate integrated waveguide (SIW) sensor combining slow-wave and air-filled technologies for humidity environment detection. Designed in a multilayer printed-circuit-board process, the proposed sensor operates at 5.8 GHz, in the industrial, scientific and medical (ISM) frequency band. Since the permittivity of the air depends on its relative humidity, the detection is obtained by measuring the resonant frequency shift of a SIW resonator. Whereas air-filled technology allows improving sensitivity detection, slow-wave effect allows both concentrating the electric field in the air and reducing the size of the sensor. Hence, a surface area reduction of the resonator cavity of 41% and 75% is obtained as compared to the partially air-filled SIW and the fully air-filled SIW, respectively. A good agreement between the numerical EM simulation and the experimental result without humidity variation is obtained. Moreover, thanks to the concentration of the electric field in the air region of the cavity, simulation results show that a sensor sensitivity of 973 kHz/RH can be expected. It allows validating the interest of combining slow-wave SIW and air-filled technology for humidity sensing application.

Published
2018

36. Miniaturized branch-line coupler based on slow-wave microstrip lines

Author

Florence Podevin, H. Issa, S. Abou-Chahine, Darine Kaddour, Philippe Ferrari, Emmanuel Pistono, A. Baheti, H. Alhalabi, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Laboratoire de Conception et d'Intégration des Systèmes (LCIS)

Subjects
010302 applied physics, Materials science, business.industry, 020206 networking & telecommunications, 02 engineering and technology, Substrate (printing), 01 natural sciences, Microstrip, [SPI.TRON]Engineering Sciences [physics]/Electronics, Printed circuit board, Branch line coupler, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Miniaturization, Return loss, Optoelectronics, Insertion loss, Electrical and Electronic Engineering, business, Layer (electronics), ComputingMilieux_MISCELLANEOUS
Abstract

This paper presents a miniaturized 3-dB branch-line coupler based on slow-wave microstrip transmission lines. The miniaturized coupler operating at 2.45 GHz is designed and implemented on a double-layer printed circuit board substrate with blind metallic vias embedded in the lower substrate layer providing the slow-wave effect. Based on this concept, a 43% size miniaturization is achieved as compared with a classical microstrip branch-line coupler prototype. The measured S parameters present a return loss of 25.5 dB and an average insertion loss equal to 0.05 dB at the operating frequency.

Published
2018

37. A 270-to-300 GHz LO-Path Phase Shifting Architecture for Sub-mm-wave Phased Arrays

Author

Zyad Iskandar, Emmanuel Pistono, Alexandre Siligaris, Jose Lugo-Alvarez, Philippe Ferrari, XAVIER, Pascal, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Beamforming, Physics, business.industry, Phased array, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, 020208 electrical & electronic engineering, Phase (waves), 020206 networking & telecommunications, 02 engineering and technology, BiCMOS, 7. Clean energy, Signal, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Injection locking, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Phase shift module, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

In this paper, a 270 to 300 GHz LO-path phase shifting architecture is presented. It is dedicated to phased array in the sub-mm-wave band for beamforming and beam-steering. The circuit includes a sub-harmonic injection locked oscillator that generates an output signal in the 270–300 GHz band, from an injection signal in the 45 to 50 GHz band that is multiplied by six. To control the phase of the output signal, an analog reflection-type phase shifter is implemented in the 45–50 GHz band, achieving near 60° phase shift in this band, and thus almost 360° in the output band. The circuit was fabricated in a BiCMOS 55 nm technology. It achieves a locking range of 30 GHz with a phase shift variation of $\mathbf{340}^{\mathrm{o}}\pm \mathbf{13}^{\mathrm{o}}$ . The power consumption of the whole circuit is 52 mW at 1.2 V voltage supply.

Published
2018

38. A millimeter-wave CMOS power amplifier design using high-Q slow-wave transmission lines

Author

Xiao-Lan Tang, Philippe Ferrari, Jean-Michel Fournier, and Emmanuel Pistono

Subjects
Power gain, Power-added efficiency, Materials science, business.industry, Amplifier, 020208 electrical & electronic engineering, RF power amplifier, Electrical engineering, Power bandwidth, 020206 networking & telecommunications, 02 engineering and technology, 7. Clean energy, Computer Graphics and Computer-Aided Design, Microstrip, Computer Science Applications, CMOS, 0202 electrical engineering, electronic engineering, information engineering, Figure of merit, Electrical and Electronic Engineering, business
Abstract

A three-stage 60-GHz power amplifier (PA) has been implemented in a 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. High-quality-factor slow-wave coplanar waveguides (S-CPW) were used for input, output and inter-stage matching networks to improve the performance. Being biased for Class-A operation, the PA exhibits a measured power gain G of 18.3 dB at the working frequency, with a 3-dB bandwidth of 8.5 GHz. The measured 1-dB output compression point (OCP1dB) and the maximum saturated output power Psat are 12 dBm and 14.2 dBm, respectively, with a DC power consumption of 156 mW under 1.2 V voltage supply. The measured peak power added efficiency PAE is 16%. The die area is 0.52 mm2 (875 × 600 μm2) including all the pads, whereas the effective area is only 0.24 mm2. In addition, the performance improvement of the PA in terms of G, OCP1dB, Psat, PAE and the figure of merit using S-CPW instead of thin film microstrip have been demonstrated. © 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2015.

Published
2015

39. Full Study of the Parallel-Coupled Stub-Loaded Resonator: Synthesis Method in a Narrow Band With an Extended Optimal Rejection Bandwidth

Author

H. Issa, Akil Jrad, Minra Akra, Emmanuel Pistono, Philippe Ferrari, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Systèmes électroniques, Télécommunications et Réseaux (Université Libanaise) (LaSTRe), and XAVIER, Pascal

Subjects
Radiation, Computer science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Bandwidth (signal processing), Stopband, Fundamental frequency, Condensed Matter Physics, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Stub (electronics), [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Resonator, Band-pass filter, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Stripline, m-derived filter
Abstract

This paper gives a complete theoretical study in a narrow band for the parallel-coupled filters based on short-circuited stub-loaded resonators. It describes a synthesis method for this filter topology, and a complete resonant mode analysis to fully control the spurious frequencies positions. To enlarge the out-of-band rejection, an original technique, based on simple design steps, is used to address tuning of extra transmission zeros. Harmonic was suppressed to better than 35 dB with a wide stopband of more than six time the fundamental frequency. Design equations and design rules are given. Finally, several three-pole bandpass filters are designed and characterized in stripline and miscrostrip technologies to demonstrate the efficiency of the proposed concepts.

Published
2014

40. Slow-wave coplanar strip line based Low-power 80-GHz voltage control oscillator on 22-nm FDSOI technology

Author

Philippe Ferrari, Emmanuel Pistono, Sylvain Bourdel, Linus Maurer, T. Lim, Erkan Nevzat Isa, David Borggreve, Ekta Sharma, Frank Vanselow, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and XAVIER, Pascal

Subjects
Materials science, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, dBc, Silicon on insulator, 020206 networking & telecommunications, 02 engineering and technology, 7. Clean energy, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Inductance, Voltage-controlled oscillator, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Transmission line, Q factor, Phase noise, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Stripline, ComputingMilieux_MISCELLANEOUS
Abstract

This paper presents the design of a voltage controlled oscillator at mm-wave frequencies in the 22-nm Fully Depleted Silicon On Insulator technology from GlobalFoundries (22FDX). The low-quality factor inductance was replaced by a high-quality factor slow-wave transmission line. Including the output buffers, the oscillation frequency is centred at 80 GHz, with as a low-power consumption of 6.7 mW, an output power of −15.5 dBm and a phase noise of −104.7 dBc/Hz at 10 MHz offset.

Published
2017

41. DGS-SMS Compact Fifth Order Low Pass Filter

Author

Philippe Ferrari, Darine Kaddour, Heba El-Halabi, Emmanuel Pistono, H. Issa, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and XAVIER, Pascal

Subjects
010302 applied physics, Waveguide filter, Physics::Instrumentation and Detectors, business.industry, Computer science, Low-pass filter, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020206 networking & telecommunications, 02 engineering and technology, Distributed element filter, Constant k filter, 01 natural sciences, Composite image filter, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Prototype filter, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Telecommunications, Optical filter, m-derived filter, ComputingMilieux_MISCELLANEOUS
Abstract

This paper presents a slow-wave microstrip transmission lines based on a double-layer PCB substrate. The slow wave effect is obtained by inserting metallic via rows within the lower substrate layer. Based on this concept, miniaturized high rejection 5'h order low pass stepped impedance filters with a cut-off frequency of 2.45 GHz are designed, fabricated and measured. Measurement results are in good agreement with simulations. Thanks to the slow-wave transmission lines, the size of the realized filters is reduced by 54% as compared to a classical filter prototype.

Published
2017

42. Thru-load de-embedding method for millimeter wave transmission lines

Author

N. Corrao, Ayssar Serhan, Jean-Daniel Arnould, Vipin Velayudhan, Emmanuel Pistono, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and XAVIER, Pascal

Subjects
Engineering, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, 020206 networking & telecommunications, 02 engineering and technology, Integrated circuit, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Electric power transmission, Transmission line, law, Extremely high frequency, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Embedding, Device under test, Millimeter, Parasitic extraction, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

This paper presents a new deembedding method for transmission lines at millimeter waves and beyond in silicon integrated technology. The proposed method is called “Thru-Load” de-embedding which is a simplification from “Half-Thru” de-embedding. In this method the pad or pad interconnects parasitics are modeled into a simple “Half-Thru”. The simulated and measurement results are presented for the fabricated S-CPW transmission line as device under test in Bi-CMOS 55 nm technology.

Published
2017

43. Slow-Wave Substrate Integrated Waveguide

Author

H. Issa, Victoria Nasserddine, Anne-Laure Franc, Emmanuel Pistono, Tan-Phu Vuong, Alejandro Niembro-Martin, and Philippe Ferrari

Subjects
Radiation, Materials science, Physics::Instrumentation and Detectors, business.industry, Topology (electrical circuits), Substrate (electronics), Condensed Matter Physics, Cutoff frequency, Magnetic field, law.invention, law, Return loss, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, Phase velocity, business, Electrical conductor, Waveguide
Abstract

This paper describes a new concept of substrate integrated waveguide (SIW): a slow-wave substrate integrated waveguide (SW-SIW). Compared to a conventional SIW, the proposed topology requires a double-layer substrate with a bottom layer including internal metallized via-holes connected to the bottom conductive plane. The slow-wave effect is obtained by the physical separation of electric and magnetic fields in the structure. Electromagnetic simulations show that this topology of SIW allows decreasing the longitudinal dimension by more than 40% since the phase velocity is significantly smaller than that of a classical SIW. Simultaneously, the lateral dimension of the waveguide is also reduced. By considering a double-layer technology, SW-SIWs exhibiting a cutoff frequency of 9.3 GHz were designed, fabricated, and measured. The transversal dimension and the phase velocity of the proposed SW-SIW are both reduced by 40% as compared to a classical SIW designed for the same cutoff frequency, leading to a significant surface reduction. Moreover, an original kind of taper is proposed to achieve a good return loss when the SW-SIW is fed by a microstrip transmission line.

Published
2014

45. Compact and Broadband Millimeter-Wave Electrically Tunable Phase Shifter Combining Slow-Wave Effect With Liquid Crystal Technology

Author

Rolf Jakoby, Philippe Ferrari, Gustavo P. Rehder, Onur Hamza Karabey, Anne-Laure Franc, and Emmanuel Pistono

Subjects
Radiation, Materials science, business.industry, Electrical engineering, Topology (electrical circuits), Biasing, Condensed Matter Physics, Signal, CMOS, Transmission line, Extremely high frequency, Optoelectronics, Insertion loss, Electrical and Electronic Engineering, business, Phase shift module
Abstract

Based on a CMOS slow-wave coplanar-waveguide transmission-line topology, a novel compact millimeter-wave phase shifter is presented. The tunability is accomplished by using a liquid crystal (LC) material as a tunable dielectric between the coplanar signal strip and the shielding plane of the slow-wave transmission line. The device tunability is considerably enhanced by moving the free-standing signal strip with the application of a bias voltage. Combining the miniaturizing benefits of the slow-wave effect with the continuous tuning of LC material, the proposed device occupies only 0.38 mm2 and exhibits high performance. The phase shifter was characterized up to 45 GHz for a maximum bias voltage of 20 V without significant power consumption. The reproducible measurements show a figure-of-merit (ratio between the maximum phase shift and the maximum insertion loss) of 51°/dB at 45 GHz.

Published
2013

46. A 30–50 GHz reflection-type phase shifter based on slow-wave coupled lines in BiCMOS 55 nm technology

Author

Vincent Puyal, Florence Podevin, Alfredo Bautista, Emmanuel Pistono, Jose Lugo-Alvarez, Alexandre Siligaris, Philippe Ferrari, Zyad Iskandar, XAVIER, Pascal, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire Opto+, Alcatel R&I Marcoussis, ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Beamforming, Materials science, business.industry, Phased array, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Coplanar waveguide, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, BiCMOS, Chip, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 0202 electrical engineering, electronic engineering, information engineering, Return loss, Insertion loss, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Phase shift module, ComputingMilieux_MISCELLANEOUS
Abstract

This paper presents a mm-wave compact, ultra-wideband reflection-type phase shifter (RTPS). This phase shifter is dedicated to phased array transmitter based on LO-path phase shifting for beamforming and beam-steering applications in the sub-mm-wave band. The proposed RTPS is designed using a slow-wave coplanar waveguide coupler and reflective loads. The circuit was fabricated in BiCMOS 55 nm technology. As predicted by simulations, measurement results show a relative phase shift of 61°±1° that is very stable over a wide frequency range from 30 GHz to 50 GHz, with insertion loss of 4 dB ± 1 dB at 50 GHz, leading to a figure-of-merit (FoM) of 12°/dB. The measured return loss is always better than 10 dB across the whole band. The chip area is only 0.18 mm2.

Published
2016

47. High-Performance Shielded Coplanar Waveguides for the Design of CMOS 60-GHz Bandpass Filters

Author

Philippe Ferrari, Emmanuel Pistono, Anne-Laure Franc, and Daniel Gloria

Subjects
Engineering, business.industry, Topology (electrical circuits), STRIPS, Microstrip, Electronic, Optical and Magnetic Materials, law.invention, Band-pass filter, CMOS, Filter (video), law, Q factor, Electronic engineering, Insertion loss, Electrical and Electronic Engineering, business
Abstract

This paper presents optimized very high performance CMOS slow-wave shielded CPW transmission lines (S-CPW TLines). They are used to realize a 60-GHz bandpass filter, with T-junctions and open stubs. Owing to a strong slow-wave effect, the longitudinal length of the S-CPW is reduced by a factor up to 2.6 compared to a classical microstrip topology in the same technology. Moreover, the quality factor of the realized S-CPWs reaches 43 at 60 GHz, which is about two times higher than the microstrip one and corresponds to the state of the art concerning S-CPW TLines with moderate width. For a proof of concept of complex passive device realization, two millimeter-wave filters working at 60 GHz based on dual-behavior-resonator filters have been designed with these S-CPWs and measured up to 110 GHz. The measured insertion loss for the first-order (respectively, second-order) filter is -2.6 dB (respectively, -4.1 dB). The comparison with a classical microstrip topology and the state-of-the-art CMOS filter results highlights the very good performance of the realized filters in terms of unloaded quality factor. It also shows the potential of S-CPW TLines for the design of high-performance complex CMOS passive devices.

Published
2012

48. Millimeter-wave CMOS power amplifier using slow-wave transmission lines

Author

Yuefei Dai, Philippe Ferrari, Zongming Duan, Jean-Michel Fournier, Xiao-Lan Tang, Qiang Ma, Emmanuel Pistono, XAVIER, Pascal, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Power gain, Power supply rejection ratio, Power-added efficiency, Materials science, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Amplifier, RF power amplifier, Electrical engineering, Power bandwidth, 7. Clean energy, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Linear amplifier, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Direct-coupled amplifier, ComputingMilieux_MISCELLANEOUS
Abstract

A three-stage 60-GHz power amplifier was implemented in a 65 nm CMOS technology. High-quality-factor slow-wave coplanar waveguides were used for input, output and inter-stage matching networks in order to improve the performance. In Class-A operation, the power amplifier exhibits a measured maximum linear power gain G of 18.3 dB at 55 GHz, with a 3-dB bandwidth of 8.5 GHz. The measured 1-dB output compression point OCP 1dB and the maximum saturated output power P sat are 12 dBm and 14.2 dBm, respectively, with a DC power consumption of 156 mW under 1.2 V voltage supply. The measured peak power added efficiency PAE is 16 %. The die area is 0.52 mm2 (875 ×m × 600 μm) including all the pads, whereas the effective area is only 0.24 mm2.

Published
2015

49. Impact of technology dispersion on slow-wave high performance shielded CPW transmission lines characteristics

Author

H. Issa, Darine Kaddour, Emmanuel Pistono, N. Corrao, Philippe Ferrari, Anne-Laure Franc, Jean-Michel Fournier, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Radio spectrum, Electronic, Optical and Magnetic Materials, law.invention, Quality (physics), Electric power transmission, CMOS, law, Shielded cable, Dispersion (optics), 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optoelectronics, Wafer, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, business, Microwave
Abstract

Shielded coplanar waveguides are promising candidates for the development of high quality factor transmission lines in millimeter-wave frequency bands. In this article, state-of-the-art experimental results carried out on a CMOS 0.35 μm low-cost technology are presented. This letter especially deals with the benchmark of slow-wave transmission lines in focusing on the impact of technology dispersion on the measurement results. Eight dies have been measured, each from a different wafer, showing a robust design versus the technology. These results open new possibilities for the development of miniaturized low-loss compact passive devices. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2786–2789, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25598

Published
2010

50. Behaviour Study of Low-Loss Slow-Wave Coplanar Transmission Lines for RFIC Applications

Author

Marwa Abdelaziz, Darine Kaddour, Florence Podevin, H. Issa, Emmanuel Pistono, Jean-Marc Duchamp, and Philippe Ferrari

Subjects
Electric power transmission, Materials science, business.industry, Optoelectronics, RFIC, business
Abstract

Slow wave coplanar transmission lines (S-CPW), based on conventional coplanar CPW transmission lines with a floating patterned ground plane, consisting in floatting strips below the line, are good candidates for the integration of distributed RF circuits for front-end modules. They offer high quality factors when compared to conventional coplanar transmission lines. In this paper, guidelines are carried out for the design of such transmission lines. Simulations are first compared to already published measurements thus validating the simulation method used throughout the paper. Next, considering a standard 0.35 µm CMOS process, a design guideline is drawn in order to determine the characteristic impedance, the phase velocity and the dielectric effective constant of the S-CPW transmission lines, along with the attenuation loss and the quality factor. The effects of the floating strips duty cycle, the floating strip width and the ground plane width are studied.

Published
2008

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