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Mm-wave single-pole double-throw switches: HBT-vs MOSFET-based designs
- Source :
- 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS), 19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, 19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon, France. ⟨10.1109/NEWCAS50681.2021.9462753⟩, NEWCAS, 19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon( virtual), France. ⟨10.1109/NEWCAS50681.2021.9462753⟩
- Publication Year :
- 2021
- Publisher :
- HAL CCSD, 2021.
-
Abstract
- International audience; This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS), 19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, 19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon, France. ⟨10.1109/NEWCAS50681.2021.9462753⟩, NEWCAS, 19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon( virtual), France. ⟨10.1109/NEWCAS50681.2021.9462753⟩
- Accession number :
- edsair.doi.dedup.....c0603bdbb5003d26f65a7d7b28d55e37