36 results on '"Dunne, Greg"'
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2. Trap and inversion layer mobility characterization using Hall Effect in silicon carbide-based MOSFETs with gate oxides grown by sodium enhanced oxidation
3. Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs
4. DC and transient performance of 4H-SiC double-implant MOSFETs
5. Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers
6. Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
7. Epitaxial Growth and Characterization of SiC on Different Orientations
8. Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
9. Readiness of SiC MOSFETs for Aerospace and Industrial Applications
10. High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
11. Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications
12. Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
13. 3kV 4H-SiC Thyristors for Pulsed Power Applications
14. Performance and Reliability of SiC MOSFETs for High-Current Power Modules
15. Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
16. Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
17. Wafer-Level Hall Measurement on SiC MOSFET
18. Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
19. Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors
20. Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
21. Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
22. 950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
23. Comparison of metal-oxide-semiconductor capacitors on c- and m-plane gallium nitride
24. Comparison of 4H-SiC Separate Absorption and Multiplication Region Avalanche Photodiodes Structures for UV Detection
25. Epitaxial Growth and Characterization of SiC on Different Orientations
26. Epitaxial Growth and Characterization of SiC on Different Orientations.
27. Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering
28. Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
29. Silicon Carbide Power Devices for Use in Hybrid-EV
30. High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
31. The Fans Speak Out.
32. The Fans Speak Out.
33. Letters To The Editor.
34. A Conversation with Scott Cairns
35. Hojoki: Visions of a Torn World (review)
36. Lifelong friends: first pictures of victims of horror pile-up on A2.
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