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DC and transient performance of 4H-SiC double-implant MOSFETs
- Source :
- IEEE Transactions on Electron Devices. August, 2008, Vol. 55 Issue 8, p1824, 6 p.
- Publication Year :
- 2008
-
Abstract
- SiC vertical MOSFETs are fabricated and characterized with blocking voltages of about 1 kV and a specific on-resistance as low as 8.3 m[omega].[cm.sup.2]. The internal body diode's reverse recovery characteristics have shown injection-limited conduction, which are attributed to the implanted P-anode layers.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.184770516