Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers

Authors :: Tilak, Vinayak
Matocha, Kevin
Dunne, Greg
Source :: IEEE Transactions on Electron Devices. Nov, 2007, Vol. 54 Issue 11, p2823, 7 p.
Publication Year :: 2007
Abstract: The main scattering mechanisms limiting mobility in SiC MOSFETs were examined with the help of Hall-effect mechanisms of n-channel MOS devices. Findings reveal that surface-roughness scattering and Coulomb scattering were the main scattering mechanisms limiting electron mobility found in SiC MOSFETs at room temperature.

Subjects :: Hall effect -- Analysis
Metal oxide semiconductor field effect transistors -- Design and construction
Silicon carbide -- Mechanical properties
Silicon carbide -- Electric properties
Electrons -- Scattering
Electrons -- Analysis
Business
Electronics
Electronics and electrical industries

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