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1. Single-Chip Silicon Photonic Processor for Analog Optical and Microwave Signals

2. 25 Gb/s Colorless Transmitter Based on Reflective Electroabsorption Modulator for Ultra-Dense WDM-PON Application

3. Integration by Selective Area Growth of Multiple Semi‐Insulating Buried Heterostructure‐Distributed Feedback Lasers with Optimized Performance Over 100 nm in the O‐Band.

4. Heterogeneous tunable III-V-on-silicon-nitride mode-locked laser emitting wide optical spectra

5. Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

6. 25 Gb/s Colorless Transmitter Based on Reflective Electroabsorption Modulator for Ultra-Dense WDM-PON Application

8. Revealing of InP multi-layer stacks from KPFM measurements in the dark and under illumination

9. High-Speed Direct Modulation on III-V-on-SOI Distributed Feedback Lasers with Intrinsic Electro-Optical Bandwidth Over 20 GHz

11. Ultra-Fast Continuous Wavelength Sweep in III-V-on-SOI MOSCAP DFB Lasers

12. III-V-on-silicon nitride narrow-linewidth tunable laser based on micro-transfer printing

13. Integrated lasers on silicon for optical communications

14. Ultra-fast continuous wavelength sweep in III-V-on-SOI MOSCAP DFB lasers

16. Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range

17. Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings

18. Narrow-Linewidth Micro-Transfer-Printed III-V-on-Si Laser with 110 nm Tuning Range

20. Heterogeneously integrated III-V/Si Tunable lasers

22. Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells

23. Hybrid InP-SiN microring-resonator based tunable laser with high output power and narrow linewidth for high capacity coherent systems

24. Improving the understanding of the KPFM technique through analyses of InP multilayers with associated modelling

25. AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

26. Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

28. As-Grown InGaAsN Subcells for Multijunction Solar Cells by Molecular Beam Epitaxy

29. Reflective Electroabsorption Modulators for Beyond 25 Gb/s Colorless Transmissions

32. 25 Gb/s Colorless Transmitter Based on Reflective Electroabsorption Modulator for Ultra-dense WDM-PON Application

33. Ultra-Fast Tunable Laser Enabling 4 ns Coherent Slot Switching Beyond 100 Gbit/s

35. AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth.

37. The hybrid III-V on Si photonic platform revisited: achievements and challenges (Conference Presentation)

38. III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Photonic Integrated Circuits

40. A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

41. Low temperature plasma epitaxy of Silicon on III-V

42. Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition

45. Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

46. Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor deposition

48. Modelling of multijunction cells

49. Si1-xGex alloys on III-V (100): first steps in film growth by low temperature PECVD epitaxy

50. Hybrid III-V on Silicon Integrated Distributed Feedback Laser and Ring Resonator for 25 Gb/s Future Access Networks

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