A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

A triple channel Camel high electron mobility transistor (HEMT) structure is developed and compared with conventional double channel (DC) HEMTs. It is shown that the Camel HEMT features a supply layer positioned between two high mobility InGaAs channels which leads to low gate leakage current due to tunneling, increased breakdown voltage compared to DC-HEMTs and higher dynamic performance due to the Camel HEMTs excellent output conductance. The Camel HEMT also provides high current density and static and dynamic characteristics with smooth variations.