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305 results on '"Decobert, J."'

7. III-V-on Si Tunable Lasers for Optical Communications

Author

Ramirez, Joan Manel, primary, Fanneau, Pierre, additional, Neel, Delphine, additional, Shen, Alexandre, additional, Malhouitre, Stephane, additional, Jany, Christophe, additional, Hassan, Karim, additional, Decobert, J., additional, and Bitauld, David, additional

Published
2022
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8. Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Author

Soresi, S., Da Lisca, M., Besancon, C., Vaissiere, N., Larrue, A., Calo, C., Alvarez, J., Longeaud, C., Largeau, L., Garcia-Linares, P., Tournié, E., Kleider, J.P., and Decobert, J.

Subjects
Renewable Energy, Sustainability and the Environment, III-V and Related Compound Semiconductors, Electrical and Electronic Engineering, Condensed Matter Physics, Evolving and Emerging Technologies: Tandems, Thin Film absorbers, III-V, New Materials and Concepts, Advanced Modelling, Electronic, Optical and Magnetic Materials
Abstract

8th World Conference on Photovoltaic Energy Conversion; 378-383, The integration of III-V multi-junction solar cells on Si substrates is one of the most encouraging prospects to combine high photovoltaic performance with a reduction of the manufacturing costs. We propose a prospective study for the realization of an InP/InGaAs tandem solar cell lattice-matched to InP on a commercially available Si template by direct MOVPE growth. The InP top cell and the InGaAs bottom cell were firstly separately grown and optimized using InP substrates, which exhibited conversion efficiencies of 13.5% and 11.4%, respectively. The two devices were then combined in a tandem device by introducing an intermediate InP/AlInAs lattice-matched tunnel junction, showing an efficiency of 18.4%. As an intermediate step towards the realization of the tandem device on Si, the InP and InGaAs single junction solar cells were grown on top of a commercial InP/GaP/Si template. Each cell was electrically characterized by external quantum efficiency and illuminated current-voltage under solar simulator: efficiencies of 3.6% and 2.0% for the InP and InGaAs solar cells were obtained, respectively. The material quality was also analyzed by means of X-ray diffraction, Atomic-Force Microscopy, Transmission Electron and Scanning Electron Microscopy.

Published
2023
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9. Ultra compact High responsivity photodiodes for >100 Gbaud applications

Author

Caillaud, C, Bertin, H, Bobin, A, Gnanamani, R, Vaissiere, N, Pommereau, F, Decobert, J, Maneux, C, III-V lab, a joint lab between NBLF, TRT and CEA-Leti, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Mukherjee, Chhandak, and Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; We demonstrated ultra-compact waveguide UTC photodiode with bandwidth efficiency product of 36 GHz on 50Ω load and above 55 GHz on 25Ω load, which allows to reach a bandwidth above 110 GHz with 0.6 A/W responsivity.

Published
2021

17. Optical and structural investigation in In(sub 1-x)Ga(sub x)P free-standing microrods

Author

Nakaema, M.K.K., Godoy, M.P.F., Brasil, M.J.S.P., Iikawa, F., Silva, D., Sacilotti, M., Decobert J., and Patriarche, G.

Subjects
Indium -- Structure, Indium -- Optical properties, Gallium compounds -- Optical properties, Gallium compounds -- Structure, Phosphorus compounds -- Optical properties, Phosphorus compounds -- Structure, Physics
Abstract

A structural and optical characterization of scepterlike micrometer-sized free-standing structures, composed of a long InGaP rod with a metallic sphere on its top, grown on polycrystalline InP substrates is presented. The InGaP rods present essentially constant Ga composition within a fluctuation of approximately 10% and efficient optical emission.

Published
2005

18. AlGaInAs MQW Laser Regrowth on Heterogenerous InP- on-SOI : Performance for Different Silicon Cavity Designs

Author

Besancon, C., primary, Néel, D., additional, Ramirez, J., additional, Bitauld, D., additional, Cerulo, G., additional, Make, D., additional, Vaissiere, N., additional, Pommereau, F., additional, Fournel, F., additional, Sanchez, L., additional, Dupré, C., additional, Muffato, V., additional, Hassan, K., additional, and Decobert, J., additional

Published
2021
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24. Growth and characterization of GaAlAs/GaAs and GaInAs/InP structures: the effect of a pulse metalorganic flow

Author

Sacilotti, M., Horiuchi, L., Decobert, J., Brasil, M.J., Cardosos, L.P., Ossart, P., and Ganiere, J.D.

Subjects
Gallium compounds -- Research, Indium -- Research, Epitaxy -- Research, Physics
Abstract

The metalorganic vapor phase epitaxy system (MOVPE) was used to grow gallium aluminum arsenate(GaAlAs)/gallium arsenide(GaAs) and gallium indium arsenate(GalInAs)/indium phosphite(InP) in order to study their layer heterostructures. Layers grown via high vapor pressure metalorganic sources exhibited fluctuations in the ternary alloy composition attributed to the pulse character of the high vapor pressure metalorganic flow. The study revealed information on GaAlAs/GaAs and GaInAs/InP characteristics such as photoluminiscence, chemical composition and x-ray diffraction.

Published
1992

29. Oxide confining layer on an InP substrate

Author

Legay, P., Caillet, F., Decobert, J., Leprince, L., Le Roux, G., and Quillec, M.

Subjects
Oxidation-reduction reaction -- Research, Chemical vapor deposition -- Usage, Superlattices as materials -- Research, Epitaxy -- Research, Physics
Abstract

Research was conducted to examine the wet thermal oxidation of a strained balanced superlattice structure that was epitaxially developed on InP and includes high Al content layers. The oxidation kinetics were considered as a function of oxidation duration and temperature. Results indicate the usefulness of the structure as a confining layer for monolithic long wavelength vertical cavity surface emitting layers.

Published
1999

32. APDs for Future Optical Access Systems beyond 25G

Author

Achouche, M., primary, Decobert, J., additional, Vaissiere, N., additional, Martin, F., additional, Fortin, C., additional, Paret, JF., additional, Lanteri, D., additional, Mekhazni, K., additional, Gariah, H., additional, Caillaud, C., additional, and Blache, F., additional

Published
2019
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35. Design, Fabrication and Characterization of Hybrid III-V/SOI Phase-Shift Free DFB Laser with Tapered Silicon Waveguide

Author

Gallet, A., primary, Hassan, K., additional, Jany, C., additional, Card, T., additional, DaFonseca, J., additional, Rebeyrol, V., additional, Girard, N., additional, Shen, A., additional, Make, D., additional, Provost, J-G., additional, Decobert, J., additional, Muffato, V., additional, Coquiard, A., additional, Malhouitre, S., additional, Olivier, S., additional, Debregeas, H., additional, Duan, G.-H., additional, and Grillot, F., additional

Published
2018
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36. Optical and structural investigation of In1-xGaxP free-standing microrods.

Author

Nakaema, M. K. K., Godoy, M. P. F., Brasil, M. J. S. P., Iikawa, F., Silva, D., Sacilotti, M., Decobert, J., and Patriarche, G.

Subjects
MICROMETERS, THICKNESS measurement, POLYCRYSTALS, CRYSTALS, CATALYSTS, PHYSICS
Abstract

We present a structural and optical characterization of scepterlike micrometer-sized free-standing structures, composed of a long InGaP rod with a metallic sphere on its top, grown on polycrystalline InP substrates. In contrast to the conventional vapor-liquid-solid growth method, no catalyst was deposited on the substrate. Instead, metallic In liberated from the InP substrate by phosphor evaporation works as the catalyst metal. We performed Raman scattering, photoluminescence spectroscopy, scanning electron microscopy, and energy dispersive x-ray spectroscopy measurements on individual structures. The alloy composition measured by microscopic techniques is in agreement with the values obtained by the optical measurements considering that the rod is strain free. The InGaP rods present essentially constant Ga composition within a fluctuation of ∼10% and efficient optical emission. We also observed a marked increase in the Raman-scattering signal at rod positions near the metallic sphere (the “neck”), which was attributed to a surface-enhanced Raman-scattering effect. Our results demonstrate the possibility of using InGaP rods for optical device applications. [ABSTRACT FROM AUTHOR]

Published
2005
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37. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Author

El Gmili, Y., Bonanno, P., Sundaram, S., Li, Xiaojian, Puybaret, R., Patriarche, G., Pradalier, C., Decobert, J., Voss, P., Salvestrini, Jean-Paul, Ougazzaden, A., Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), and THALES-ALCATEL

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017
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38. Development of III-V on Si Multijunction Photovoltaics by Wafer Bonding

Author

Vauche, L., Veinberg Vidal, E., Jany, C., Morales, C., Decobert, J., Dupre, C., and Mur, P.

Subjects
III-V-Based Devices for Terrestrial and Space Applications, Concentrator and Space Photovoltaics
Abstract

33rd European Photovoltaic Solar Energy Conference and Exhibition; 1228-1231, We report the fabrication of GaInP/AlGaAs/Si triple junction (3J) and AlGaAs/Si tandem (2J) solar cells using surface-activated wafer bonding (SAB). We observe maximum power conversion efficiency of 25.2% at 1-sun for a 3J device and 21.8% for a 2J device. The EQE analysis of the cells was carried out, which suggested that the 3J device performance was limited by the JSC generated at the Si subcell. We demonstrate that higher efficiencies are feasible through design and adjustment of anti-reflective coating (ARC), GaAs bonding layer thickness and Si subcell.

Published
2017
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39. Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: experimental and modeling analysis

Author

Dupuis, N., Decobert, J., Lagree, P.-Y., Lagay, N., Poingt, F., Kazmierski, C., Ramdane, A., and Ougazzaden, A.

Subjects
Aluminum compounds -- Chemical properties, Aluminum compounds -- Optical properties, Gallium -- Chemical properties, Gallium -- Optical properties, Indium -- Chemical properties, Indium -- Optical properties, Arsenic -- Chemical properties, Arsenic -- Optical properties, Photoluminescence -- Analysis, Physics
Abstract

Selective area growth modeling of the AlGaInAs material system is analyzed. High-resolution micro-photoluminescence and optical interferometer microscopy measurements have validated the simulated band gap and thickness variations for both bulk and multi-quantum well layers.

Published
2008

47. ElectroAbsorption modulated laser integrated with a semiconductor optiacl Amplifier for 125-km 10.3-Gb/s dispersion-penalty-free transmission

Author

Ngo, Minh Nguyet, Nguyen, Hoang Trung, Gosset, Christophe, Erasme, Didier, Deniel, Qian, Genay, Naveena, Guillamet, Ronan, Lagay, Nadine, Decobert, J., Poingt, Francis, Brenot, Romain, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), Télécom ParisTech, Orange Labs [Lannion], and France Télécom

Subjects
optical fibers, Chirp, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, electroabsorption modulated lasers, semiconductor optical amplifiers
Abstract

International audience; We report, for the first time, a transmission experiment over standard fiber at 1.55 _m using an electroabsorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA). We show clearly that negative pre-chirped signals can be obtained by adjusting both modulator and amplifier driving parameters. Negative chirp operation is evaluated through small-signal chirp measurement as well as through time-resolved dynamic chirp measurement. Signal chirp control at emission enhances transmission and increases optical reach. Thanks to the SOA gain and chirp compensation for modulator loss and chirp, dispersion-penalty-free over 125 km of optical fiber at 10.3 Gb/s is achieved. This novel fully integrated EML-SOA is very promising as a high-performance, compact and low-cost optical transmitter for the future access-metropolitan network convergence.

Published
2013
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48. Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission

Author

Caillaud, C., primary, Mestre Adrover, M. A., additional, Blache, F., additional, Pommereau, F., additional, Decobert, J., additional, Jorge, F., additional, Charbonnier, P., additional, Konczykowska, A., additional, Dupuy, J.-Y., additional, Mardoyan, H., additional, Mekhazni, K., additional, Paret, J.-F., additional, Faugeron, M., additional, Mallecot, F., additional, and Achouche, M., additional

Published
2015
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50. New approach of nano selective area growth for a precise control of GaN nanodots grown by MOVPE

Author

Martin, J., Martinez, A., Goh, W.H., Gautier, S., Dupuis, N., Le Gratiet, L., Decobert, J., Ramdane, A., Maloufi, N., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), and Salvestrini, Jean Paul

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

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