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Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: experimental and modeling analysis
- Source :
- Journal of Applied Physics. June 1, 2008, Vol. 103 Issue 11, 113113-1-113113-8
- Publication Year :
- 2008
-
Abstract
- Selective area growth modeling of the AlGaInAs material system is analyzed. High-resolution micro-photoluminescence and optical interferometer microscopy measurements have validated the simulated band gap and thickness variations for both bulk and multi-quantum well layers.
- Subjects :
- Aluminum compounds -- Chemical properties
Aluminum compounds -- Optical properties
Gallium -- Chemical properties
Gallium -- Optical properties
Indium -- Chemical properties
Indium -- Optical properties
Arsenic -- Chemical properties
Arsenic -- Optical properties
Photoluminescence -- Analysis
Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.182768089