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Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: experimental and modeling analysis

Authors :
Dupuis, N.
Decobert, J.
Lagree, P.-Y.
Lagay, N.
Poingt, F.
Kazmierski, C.
Ramdane, A.
Ougazzaden, A.
Source :
Journal of Applied Physics. June 1, 2008, Vol. 103 Issue 11, 113113-1-113113-8
Publication Year :
2008

Abstract

Selective area growth modeling of the AlGaInAs material system is analyzed. High-resolution micro-photoluminescence and optical interferometer microscopy measurements have validated the simulated band gap and thickness variations for both bulk and multi-quantum well layers.

Details

Language :
English
ISSN :
00218979
Volume :
103
Issue :
11
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.182768089