Growth and characterization of GaAlAs/GaAs and GaInAs/InP structures: the effect of a pulse metalorganic flow

The metalorganic vapor phase epitaxy system (MOVPE) was used to grow gallium aluminum arsenate(GaAlAs)/gallium arsenide(GaAs) and gallium indium arsenate(GalInAs)/indium phosphite(InP) in order to study their layer heterostructures. Layers grown via high vapor pressure metalorganic sources exhibited fluctuations in the ternary alloy composition attributed to the pulse character of the high vapor pressure metalorganic flow. The study revealed information on GaAlAs/GaAs and GaInAs/InP characteristics such as photoluminiscence, chemical composition and x-ray diffraction.