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188 results on '"Cyril Buttay"'

1. Phase-Shifted Full Bridge DC–DC Converter for Photovoltaic MVDC Power Collection Networks

Author

Pierre Le Metayer, Quentin Loeuillet, Francois Wallart, Cyril Buttay, Drazen Dujic, and Piotr Dworakowski

Subjects
DC-DC power converters, photovoltaic systems, medium voltage, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

The connection of photovoltaic sources to a medium voltage dc collection network requires a dc-dc converter having specific grid-connected converter capabilities. This article presents the application of a phase-shifted full bridge (PSFB) converter for medium voltage dc collection networks suited to photovoltaic power plants. The unidirectional structure of the converter is beneficial in terms of cost and simplicity of hardware implementation of the MV circuit components. The design of the PSFB converter is presented considering ratings of 250 kW power, 1.2 kV input, and 20 kV output. A converter model and a novel PSFB input voltage control regulating the dc-link voltage are developed and verified. A tuning method is given taking into account the effect of different transformer leakage inductance values. The behaviour of the PSFB under the PV power production profile and MV network faults is studied in simulation and verified against a reduced-scale prototype with ratings of 30 kW and 350 V / 600 V operating at 20 kHz. The experimental verification of the control is performed considering a real PV power profile. The experimental results under faults show the same response as in simulations. The PSFB fault response is observed to be superior compared to other dc–dc topologies with capacitive output filter only, making it suitable for grid-connected operation.

Published
2023
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2. Optical Detection of Partial Discharges Under Fast Rising Square Voltages in Dielectric Liquids

Author

Somya Anand, Eric Vagnon, Martin Guillet, and Cyril Buttay

Subjects
Partial discharge, square voltages, high dV/dt, ac, optical method, photomultiplier tube, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

Partial discharge (PD) measurement of an insulation system is widely used as a diagnostic tool for the quality control of high voltage apparatuses. In ac, the conventional method of PD detection is well established. However, under square voltages such as those generated across power electronic converters, the conventional method cannot discriminate between PDs and switching transients. In this context, this paper demonstrates PD detection under fast-rising square voltages by deploying a photomultiplier tube. For this, an experimental set-up generating unipolar square voltage (USV) waveforms is developed, generating a dV/dt in the range of 10-100 kV/ $\mu \text{s}$ . The device under test (DUT) comprises of needle-barrier plane configuration immersed in dielectric liquids. Barriers differing in permittivity and thicknesses are chosen to test with two types of dielectric liquids, to assess varying conditions. The results thus obtained show a lower partial discharge inception voltage (PDIV) in USV than in bipolar ac for the same DUT specimen. The phase-resolved (PR) PD patterns exhibit a higher PD occurrence during rising and falling front of the USV waveform. Experimental results demonstrate the relevance of the PMT as a PD detector for square voltage waveforms exhibiting high dV/dt in dielectric liquids.

Published
2022
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3. Modeling and test of a thermosyphon loop for the cooling of a megawatt-range power electronics converter

Author

Majededdine Moustaid, Vincent Platel, Martin Guillet, Hugo Reynes, and Cyril Buttay

Subjects
Passive cooling, Power Electronics, Novec 649, Loop Thermosyphon, Heat, QC251-338.5
Abstract

A thermosyphon loop, designed for the thermal management of a large Medium voltage power converter 5 MW overall, corresponding to a 2.4 kW thermal load per cooling unit) is presented. The device is mainly made of an evaporator, a condenser and a reservoir connected with plastic liquid and vapor lines. Novec 649 (3M) has been chosen as the working fluid due to environmental and electrical concerns. A model of the loop is described, and its predictions are compared with experiments. A first comparison yields a maximum mean deviation of 20 % between experimental results and numerical simulation at the maximum coolant temperature. The main sources of errors are identified, and improvements are proposed for better model accuracy.

Published
2022
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26. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Author

Yuan Qin, Benjamin Albano, Joseph Spencer, James Spencer Lundh, Boyan Wang, Cyril Buttay, Marko Tadjer, Christina DiMarino, and Yuhao Zhang

Subjects
Acoustics and Ultrasonics, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Abstract

Power semiconductor devices are fundamental drivers for advances in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for a smaller chip size, lower loss and higher frequency compared with their silicon (Si) counterparts, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Packaging in particular is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to their low intrinsic carrier density and increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, requires new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for device–package electrothermal co-design and high-temperature packages that can withstand the high electric fields expected in UWBG devices.

Published
2023
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29. (Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga 2 O 3 Devices?

Author

Christina DiMarino, Ruizhe Zhang, Cyril Buttay, Guo-Quan Lu, Kohei Sasaki, Boyan Wang, Jack Knoll, Yuhao Zhang, Ming Xiao, Joseph Spencer, Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University [Blacksburg], Novel Crystal Technology Inc, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, business.industry, Thermal resistance, 0502 economics and business, 05 social sciences, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Optoelectronics, 050207 economics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021
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30. Break-even distance for MVDC electricity networks according to power loss criteria

Author

Pierre Le Métayer, Juan Paez, Sellé Touré, Cyril Buttay, Drazen Dujic, Eric Lamard, Piotr Dworakowski, SuperGrid Institute SAS, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Ecole Polytechnique Fédérale de Lausanne (EPFL), and Compagnie Nationale du Rhône (CNR)

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, Medium voltage, Efficiency, Power transmission, Photovoltaic, DC collector network
Abstract

International audience; The medium voltage direct current (MVDC) technology is emerging in electricity networks including point-to-point transmission, distribution networks and collection networks for renewable energy sources. In this article the MVDC break-even distance (with respect to AC distribution) is calculated according to the overall energy efficiency criteria. The break-even distance is found to vary from less than 10 km to several tens of kilometres depending on power and voltage ratings and network topology.

Published
2021

31. Characterization of 4.5 kV Charge-Balanced SiC MOSFETs

Author

Jack Knoll, Cyril Buttay, Christina DiMarino, Reza Ghandi, Mina Shawky, Sheng-Hung Yen, Stacey Kennerly, and Ibrahim M. Eshera

Subjects
Materials science, business.industry, Insulated-gate bipolar transistor, Microstructure, Capacitance, chemistry.chemical_compound, chemistry, MOSFET, Limit (music), Silicon carbide, Optoelectronics, Breakdown voltage, business, Voltage
Abstract

This work demonstrates a novel charge-balanced (CB) silicon carbide (SiC) MOSFET that boasts a specific on-resistance of 10 mΩ•cm2 at 4.5 kV breakdown voltage, surpassing the 1-D SiC unipolar limit. This is achieved through buried p-doped regions inside the drift layers, which are more easily scalable to higher voltages compared to the p-doped pillars used in super-junction (SJ) devices. Medium-voltage CB SiC MOSFETs with different p-doped bus widths and pitches have been fabricated and characterized in this work. The unique microstructure of these devices causes interesting macro-scale characteristics, such as distinctive steps in the capacitance–voltage curves and a turn-on voltage tail that reduces with increased temperature. The switching energy of the CB MOSFET is 92% lower than that of an IGBT at 150 °C. This paper presents and interprets these intriguing static and dynamic characteristics.

Published
2021
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32. High Power Density Design of Power Electronic Interrupter in Hybrid DC Circuit Breaker

Author

Rolando Burgos, Cyril Buttay, Steve Schmalz, Jian Liu, Dong Dong, Lakshmi Ravi, Center for Power Electronics Systems - CPES (Blacksburg, USA), Virginia Polytechnic Institute and State University [Blacksburg], Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and innovation Center - Eaton Corporation

Subjects
Materials science, business.industry, 020208 electrical & electronic engineering, 05 social sciences, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, 02 engineering and technology, Thermal conduction, Interrupter, Power (physics), Hybrid dc circuit breaker, 0202 electrical engineering, electronic engineering, information engineering, Snubber, 0501 psychology and cognitive sciences, trade-off analysis, business, high power density, 050107 human factors, Dc circuit breaker, Circuit breaker, Voltage, Power density, power electronic interrupter
Abstract

International audience; Circuit protection is a key enabler for future medium-voltage direct-current (MVDC) distribution systems. Hybrid dc circuit breaker (HCB) offers low conduction losses and reasonably fast response times, but suffers from large size. In this paper, a high power density power electronic interrupter design is introduced for the HCB. The device selection and tradeoff analysis of voltage clamping circuit are investigated. A small sized module with two parallel 1.7 kV discrete IGBTs are selected as main switches. The RC snubber and MOV are carefully designed to guarantee no tail current bump and sufficient turn-off voltage margin. Experimental results at 12 kV and 1 kA are provided to verify the operation of the prototype.

Published
2021
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33. Surge Current Capability of IGBT Based Power Electronic Interrupter Modules for Hybrid DC Circuit Breaker Applications

Author

Steven Christopher Schmalz, Lakshmi Ravi, Rolando Burgos, Cyril Buttay, Dong Dong, Jian Liu, Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University [Blacksburg], Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and innovation Center - Eaton Corporation

Subjects
Computer science, 02 engineering and technology, Interrupter, 7. Clean energy, Transient voltage suppressor, Failure modes, IGBT, hybrid circuit breaker, Power electronics, 0202 electrical engineering, electronic engineering, information engineering, 0501 psychology and cognitive sciences, surge current capability, 050107 human factors, Circuit breaker, business.industry, 020208 electrical & electronic engineering, 05 social sciences, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, Insulated-gate bipolar transistor, Modular design, Power (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, Current (fluid), business, power electronic interrupter
Abstract

International audience; The power electronic interrupter (PEI) is a key component of the dc hybrid circuit breaker (HCB) as it facilitates the arc-less opening of the mechanical switch by taking over the fault current during the interruption process. A modular implementation of the PEI enables design scalability allowing the use of high peak current density discrete IGBTs in a seriesparallel configuration as needed for the maximum transient voltage and peak fault current levels seen by the system. In this paper, surge current turn-off experiments are conducted on discrete IGBTs to determine the limiting factors for fault current interruption. Experimental data are provided to show IGBT performance under two different PEI module configurations and identified failure modes are discussed along with main design tradeoffs.

Published
2021
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34. Electrical and optical partial discharge assessment of dielectric barriers in mineral oil and synthetic ester

Author

Cyril Buttay, Somya Anand, Ayyoub Zouaghi, Martin Guillet, Oussim Agri, Eric Vagnon, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and SuperGrid Institute SAS

Subjects
Materials science, Partial discharge measurement, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Dielectric, Oil insulation, Correlation, Chemical engineering, Partial discharges, Discharges (electric), Partial discharge, medicine, Optical variables measurement, Mineral oil, Oils, medicine.drug
Abstract

International audience; In high voltage direct current (HVDC) topology, the transformer insulation system continuously experiences nonsinusoidal voltage waveforms due to its proximity with the power converters. This may cause changes in the discharge mechanisms, and as a consequence, the isolation system might undergo accelerated degradation. This study aims at investigating partial discharge (PD) measurements with different combination of solid/liquid insulation systems along with pressboard/mineral oil which is predominantly used in transformers. In this study, different barriers were tested in mineral oil and synthetic ester liquid. Also, an optical detection technique has been used beside electrical detection to acquire phase resolved partial discharge (PRPD) patterns, as it is a promising detection technique even in the presence of complex electrical waveforms. The optical detection was found to detect PD events during same phase as electrical detection and a correlation was established between two detection techniques. Moreover, the PRPD pattern and partial discharge inception voltage (PDIV) of different solid/liquid combination tested during this work have been presented.

Published
2021
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35. Packaged Ga2O3 Schottky Rectifiers with Over 60 A Surge Current Capability

Author

Guo-Quan Lu, Cyril Buttay, Yuhao Zhang, Boyan Wang, Shengchang Lu, Jingcun Liu, Ming Xiao, Ruizhe Zhang, Kohei Sasaki, Zichen Zhang, Chao Ding, Virginia Polytechnic Institute and State University [Blacksburg], Novel Cystal Technology, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, Thermal runaway, Schottky barrier, 02 engineering and technology, 7. Clean energy, gallium oxide, Index Termultra-wide bandgap, Thermal conductivity, Power electronics, 0202 electrical engineering, electronic engineering, information engineering, Power semiconductor device, thermal management, Electrical and Electronic Engineering, ruggedness, surge current, Diode, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Schottky diode, package, simulation, [SPI.TRON]Engineering Sciences [physics]/Electronics, ultra-wide bandgap, Optoelectronics, Current (fluid), business
Abstract

International audience; Ultra-wide-bandgap gallium oxide (Ga2O3) devices have recently emerged as promising candidates for power electronics; however, the low thermal conductivity (kT) of Ga2O3 causes serious concerns about their electrothermal ruggedness. This work presents the first experimental demonstrations of large-area Ga2O3 Schottky barrier diodes (SBDs) packaged in the bottom-side-cooling and double-side-cooling configurations, and for the first time, characterizes the surge current capabilities of these packaged Ga2O3 SBDs. Contrary to popular belief, Ga2O3 SBDs with proper packaging show high surge current capabilities. The double-side-cooled Ga2O3 SBDs with a 3x3 mm2 Schottky contact area can sustain a peak surge current over 60 A, with a ratio between the peak surge current and the rated current superior to that of similarly-rated commercial SiC SBDs. The key enabling mechanisms for this high surge current are the small temperature dependence of on-resistance, which strongly reduces the thermal runaway, and the double-side-cooled packaging, in which the heat is extracted directly from the Schottky junction and does not need to go through the low-kT bulk Ga2O3 chip. These results remove some crucial concerns regarding the electrothermal ruggedness of Ga2O3 power devices and manifest the significance of their die-level thermal management.

Published
2021
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36. Figures-of-Merit and current metric for the comparison of IGCTs and IGBTs in Modular Multilevel Converters

Author

Colin Charnock Davidson, Rolando Burgos, Cyril Buttay, Florent Morel, Arthur Boutry, Dong Dong, Bruno Lefebvre, SuperGrid Institute SAS, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Virginia Tech [Blacksburg], and General Electric grid solutions

Subjects
Multilevel converters, Current (mathematics), business.industry, Computer science, 020209 energy, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 02 engineering and technology, Insulated-gate bipolar transistor, Modular design, Converters, IGCT, IGBT, Integrated gate-commutated thyristor, Conduction losses, Simple (abstract algebra), Metric (mathematics), 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Figure of merit, Switching losses, business
Abstract

International audience; IGCTs and IGBTs are compared in the case of a HVDC MMC. Specific figures of merit, and a current metric providing simple means to compare them, are introduced and discussed. Simulation results of a MMC model and figures of merit are shown to provide consistent results, proving that the proposed figures of merit are a very simple and fast way to select the best semiconductor switch. Furthermore, our analysis supports the growing interest in IGCTs for MMCs, as they are found to produce the lowest level of losses.

Published
2020
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37. Experimental validation and comparison of a SiC MOSFET based 100 kW 1.2 kV 20 kHz three-phase dual active bridge converter using two vector groups

Author

Philippe Ladoux, Thomas Lagier, Cyril Buttay, Piotr Dworakowski, Elissa Cresenta Anak Justin, Philippe Camail, Andrzej Wilk, SuperGrid Institute SAS, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Faculty of Electrical and Control Engineering [GUT Gdańsk] (EIA), and Gdańsk University of Technology (GUT)

Subjects
Materials science, ZVS converters, business.industry, 020209 energy, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, 02 engineering and technology, Experimental validation, Medium frequency, Silicon Carbide (SiC), law.invention, Power flow, MOSFET, Three-phase, law, Voltage Source Converter (VSC), 0202 electrical engineering, electronic engineering, information engineering, Two-vector, Transformer, business, High Voltage power converter, Galvanic isolation
Abstract

International audience; The Dual Active Bridge appears as a promising DC-DC converter topology when galvanic isolation and bidirectional power flow are required. Among its advantages, Zero Voltage Switching allows the switching losses to be significantly reduced. For high power applications, the three-phase topology variant may be interesting in order to reach a higher power density, especially when a three-phase transformer is implemented instead of three single-phase transformers. Moreover, the transformer vector group offers a new degree of freedom for the designers. In this paper, the authors present the experimental validation of a 1.2 kV-100 kW-20 kHz three-phase Dual Active Bridge converter using two medium frequency transformers and different vector groups.

Published
2020
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38. Surge Current Capability of Ga2O3 Schottky Diodes

Author

Cyril Buttay, Hiu-Yung Wong, Boyan Wang, Ming Xiao, Christina Dimarino, Yuhao Zhang, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), San Jose State University [San José] (SJSU), Virginia Tech [Blacksburg], and Buttay, Cyril

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; β-Ga2O3 is an attractive material to build power electronic semiconductor devices, because because of its ultra-wide bandgap and the availability of large-diameter wafers growing from its own melt. However, device performance may be limited by the relatively poor thermal conductivity of the material. In this paper, we investigate the behavior of β-Ga2O3 Schottky diodes in the condition of forward current surge. An analytical electro-thermal device model is calibrated with experimental devices and TCAD simulations. Then this device model is incorporated into a SPICE electro-thermal network model, which is used to simulate the device temperature rise during the surge transient, considering various device and packaging configurations (i.e. various chip thicknesses, single-side or double-side cooling). It is found that providing heat is removed through both sides of the die, a β-Ga2O3 Schottky diode offers a robustness to surge current comparable to that of a SiC Schottky diode. The low thermal conductivity of β-Ga2O3 is found to be balanced by the enhanced heat extraction from top-side cooling as well as the intrinsic low on-resistance (and conduction loss) increase with temperature in β-Ga2O3 devices.

Published
2020

39. Système incluant un module électrique de puissance et une gaine contre les arcs électriques

Author

Cyril Buttay, Hugo Reynes, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SuperGrid Institute SAS, and Buttay, Cyril

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Published
2020

40. Module électronique de puissance comportant un support diélectrique

Author

Cyril Buttay, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), ANR-10-IEED-0005,SUPERGRID,réseaux électriques haute et très haute tension(2010), Buttay, Cyril, and réseaux électriques haute et très haute tension - - SUPERGRID2010 - ANR-10-IEED-0005 - IEED - VALID

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Published
2020

41. SiC MOSFETs robustness for diode-less applications

Author

Denis Labrousse, Hervé Morel, Stéphane Lefebvre, Marwan Ali, C. Cheng, Oriol Avino-Salvado, Cyril Buttay, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), and Safran Tech

Subjects
Silicon, Computer science, intrinsic diode, chemistry.chemical_element, robustness, 02 engineering and technology, 01 natural sciences, Silicon Carbide (SiC), MOSFET, Robustness (computer science), Power electronics, 0103 physical sciences, Electronic engineering, Electrical and Electronic Engineering, threshold voltage, Diode, 010302 applied physics, reliability, oxide traps, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 021001 nanoscience & nanotechnology, Threshold voltage, diode-less, chemistry, 0210 nano-technology
Abstract

International audience; Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterised. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.

Published
2018
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42. High temperature ageing of microelectronics assemblies with SAC solder joints

Author

Hervé Morel, Pierre Bondue, Wissam Sabbah, Alexandrine Guédon-Gracia, Hélène Fremont, Cyril Buttay, Oriol Avino-Salvado, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, PIA (investissements d'avenir) GENOME PREMICES, and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
Maximum temperature, Materials science, business.industry, 020208 electrical & electronic engineering, Metallurgy, Intermetallic, Failure mechanism, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Microstructure, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Ageing, Soldering, 0202 electrical engineering, electronic engineering, information engineering, Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, Safety, Risk, Reliability and Quality, business, Electronic systems
Abstract

International audience; In some applications, electronic systems are expected to operate at high ambient temperature (e.g. 150 °C). In this paper, we investigate the failure mechanism and microstructure evolution of solder-free (SAC) solder joints at a maximum temperature of 175 °C. It is found that no new failure mechanisms are triggered, and that ageing tests for solder can be accelerated at 175 °C. In particular, the growth rate of the interfacial intermetallic compound (IMC) is found to be consistent with that observed at lower temperatures.

Published
2017
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43. Die Interconnection for Power Module 3.0

Author

Vincent Bley, Cyril Buttay, Denis Labrousse, Mickael Petit, Bojan Djuric, Yoann Pascal, Matériaux Diélectriques dans la Conversion d’Energie (LAPLACE-MDCE), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), Mitsubishi Electric R&D Centre Europe [France] (MERCE-France), Mitsubishi Electric [France], Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), and Buttay, Cyril

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience

Published
2019

44. An investigation of current distribution over four GaN HEMTs in parallel configurations

Author

Jean-François Mogniotte, Stephane Azzopardi, Bruno Allard, Charles Joubert, Hervé Morel, Cyril Buttay, Thilini Wickramasinghe, Pascal Bevilacqua, Thanh-Long Le, Christian Martin, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), and Safran Tech

Subjects
Materials science, Spice, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, parallel, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Parasitic extraction, 010302 applied physics, business.industry, GaN HEMT, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, high frequency, Dissipation, Threshold voltage, CVR, Optoelectronics, Coaxial, business, Index Terms-current balancing, Shunt (electrical), Voltage
Abstract

International audience; GaN HEMTs are desirable for parallel configurations due to (i) relatively steady threshold voltage over a wide temperature range and (ii) the positive temperature coefficient of their on-resistances. However, their operations are sensitive to the circuit parasitics and dissimilarities between devices. This paper investigates the current distribution among four parallel GaN HEMTs, considering two symmetrical circuit layouts of a power cell. For switching experiments, 25 V input voltage and a maximum load current of 7 A are considered. Current through each GaN HEMT is measured using stud-type, high bandwidth, coaxial shunt current sensors (CSs). The same circuit is further investigated by removing the current sensors. A second circuit is built by eliminating the CSs as to achieve high current. The circuit is tested up to 27 A/ 80 V. Here, only the voltage measurements and thermal images are obtained. Thermal images are used to evaluate the power dissipation between the four HEMTs and to correlate them with the current measurements. Further, the current waveforms are simulated using a SPICE model. The parasitic elements of the layout are calculated by ANSYS Q3D.

Published
2019
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45. Thermal Considerations of a Power Converter with Components Embedded in Printed Circuit Boards

Author

Cyril Buttay, Nicolas Degrenne, Johan Le Lesle, Florent Morel, Remy Caillaud, Roberto Mrad, Stefan Mollov, Mitsubishi Electric R&D Centre Europe [France] (MERCE-France), Mitsubishi Electric [France], Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Dissipation, Inductor, 7. Clean energy, Industrial and Manufacturing Engineering, Manufacturing cost, Finite element method, Electronic, Optical and Magnetic Materials, Power (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, Printed circuit board, Thermal conductivity, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, 020201 artificial intelligence & image processing, Electrical and Electronic Engineering, business, Electronic circuit
Abstract

Printed circuit board (PCB) technology is attractive for power electronic systems as it offers a low manufacturing cost for mass production. Integration technologies such as device embedding have been developed to take advantage of the interlayer space in multi-layer PCBs and to increase the performances (electrical and thermal). However, the PCB technology offers limited power dissipation due to the low thermal conductivity [≈0.3 W/( $\text {m} \cdot \text {K}$ )] of its composite substrate. In this article, we consider PCB embedding for a 3.3-kW ac/dc bidirectional converter. We describe the integration of not only the power dies but also the gate drive circuits and the power inductor, with a special focus on thermal management. The manufacturing processes of the boards are presented. Two thermal models based on finite elements (FEs) of this converter stage are introduced. The accuracy of these models is validated against experiments. The results show that a simplified FE model offers satisfying accuracy and fast simulation, even considering the relatively complex structure and layout of the PCBs.

Published
2019
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46. Study of convective condensation in a thermosiphon loop

Author

Majed Eddine Moustaid, Vincent Platel, Cyril Buttay, SuperGrid Institute SAS, LABORATOIRE DE THERMIQUE ENERGETIQUE ET PROCEDES (EA1932) (LATEP), Université de Pau et des Pays de l'Adour (UPPA), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract

International audience; In this article, we focus on the condenser of a loop thermosiphon designed to cool power electronic component. The objective here is to condense Novec 649, our chosen working fluid for this loop. It is a fluid recently developed by 3M, which is known for having low environmental impact and non-flammable. We first present a theoretical analysis with the calculation and the hypotheses leading to the design of the multi-tubular condenser. Then we present a full size thermosiphon built for experimental validation. A discussion then addresses some of the design hypotheses. Three main parameters are studied : the tilting angle of the condenser (from horizontal to vertical orientations), the temperature of the coolant and finally the mass flow effect at different saturation temperatures. In our setup, we dissipate up to 2.4 kW at the evaporator level. The produced vapor is then condensed in the heat exchanger using cold water flowing at countercurrent. A number of measurements are made via thermocouples and pressure sensors located at both ends of the condenser to measure the average heat exchange coefficient.

Published
2019

47. Evaluation of the PCB-embedding technology for a 3.3 kW converter

Author

Johan Le Lesle, Stefan Mollov, Florent Morel, Nicolas Degrenne, Cyril Buttay, Roberto Mrad, Remy Caillaud, Mitsubishi Electric R&D Centre Europe [France] (MERCE-France), Mitsubishi Electric [France], Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Materials science, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, 02 engineering and technology, Semiconductor device, Hardware_PERFORMANCEANDRELIABILITY, Inductor, 7. Clean energy, law.invention, Inductance, Capacitor, law, visual_art, Electronic component, 0202 electrical engineering, electronic engineering, information engineering, Gate driver, visual_art.visual_art_medium, Hardware_INTEGRATEDCIRCUITS, 020201 artificial intelligence & image processing, business, Electronic circuit, Diode, Hardware_LOGICDESIGN
Abstract

International audience; This paper presents a converter fully made using PCB embedding technology (including the semiconductor devices , but also their gate driver circuits as well as the passive components). This converter is rated at a high-power (3.3 kW) considering the PCB technology. Here, the focus is given to the experimental validation of the embedding process, with the characterization of many of the embedded devices (SiC MOS-FETs, diodes, capacitors). These results show that most of the components were unaffected by the process, with the noticeable exception of the large inductors which exhibit variations in the inductance values as well as a large ac resistance. Finally, the converter is successfully assembled an tested at low power.

Published
2019
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48. Design of a Low-Capacitance Planar Transformer for a 4 kW/500 kHz DAB Converter

Author

Charles Joubert, Christian Martin, Oriol Avino-Salvado, Pierre Demumieux, Fabien Sixdenier, Cyril Buttay, Jean Sylvio Ngoua Teu Magambo, Thomas Loher, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Safran Tech, Technical University of Berlin / Technische Universität Berlin (TU), European Project: 730038,GaNOMIC, and Technische Universität Berlin (TU)

Subjects
Leakage inductance, Materials science, business.industry, Planar Transformer, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, 02 engineering and technology, Stray Elements, Capacitance, 500 kHz, law.invention, Inductance, Planar, law, Electromagnetic coil, 0202 electrical engineering, electronic engineering, information engineering, DAB, Transformer, business, Electrical conductor
Abstract

International audience; Increasing electrification in transport sectors, from automotive to aerospace, highlights the need for low size and high power density components. The recent advent of planar technology theoretically allows to reduce considerably the size of the magnetic components. This article focuses on the design of a high frequency planar transformer intended to be used in a 4 kW 500 kHz DAB converter. In particular, the inter-winding capacitances are assessed, as they have a strong influence on the behaviour of the DAB, and in some extreme cases may impede operation entirely. Analytical and finite element models are used to evaluate the stray elements of the transformer (resistance of the conductors, inter-winding capacitance and leakage inductance), and the resulting circuit model is compared with experimental measurements. This work focuses on influences of design parameters on the transformer stray elements.

Published
2019
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49. Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Author

Cyril Buttay, Hervé Morel, Ilyas Dchar, SuperGrid Institute SAS, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
Silicon, Computer science, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, chemistry.chemical_element, 02 engineering and technology, Semiconductor device, chemistry.chemical_compound, chemistry, Etching (microfabrication), Power module, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, business, Failure mode and effects analysis, Short circuit
Abstract

International audience; Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.

Published
2019

50. Sintered-Silver Bonding of High-Temperature Piezoelectric Ceramic Sensors

Author

Remi Robutel, Jianfeng Li, Stanislas Hascoet, Justine Billore, Cyril Buttay, SuperGrid Institute SAS, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Faculty of Engineering [Nottingham], and University of Nottingham, UK (UON)

Subjects
010302 applied physics, Materials science, Piezoelectric sensor, 020208 electrical & electronic engineering, Sintering, 02 engineering and technology, Nanoindentation, 01 natural sciences, Focused ion beam, Piezoelectricity, Industrial and Manufacturing Engineering, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], visual_art, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, visual_art.visual_art_medium, Shear strength, Ceramic, Electrical and Electronic Engineering, Composite material, Porosity
Abstract

International audience; Silver sintering is used to bond five components together, in order to form a piezoelectric sensor. A description is provided of the preparation of these components, and of the manufacturing steps, which are carried out at a low temperature (280 °C). The resulting sensor assemblies are then characterized: cross-sectional views show that the silver layer has a very dense structure , with less than 1 % porosity, although further focused-ion beam investigations show that this porosity is closer to 15 %. The shear strength is approximately 30 MPa. The Young's modulus of the silver bondline is measured using nanoindentation, and is found to be comparable with that of bulk silver (56.6 GPa). Finally, a silver-sintered sensor is compared with a sensor bonded using conventional techniques, showing that an improvement in sensitivity by a factor of more than 3 is achieved.

Published
2017
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