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30 results on '"Chatry, C."'

3. Real-time fibered optically stimulated luminescence dosimeter based on SrS:Ce,Sm phosphor

Author

Benoit, D., Garcia, P., Matias-Vaille, S., Ravotti, F., Vaille, J.-R., Glaser, M., Brichard, B., Fernandez, A.F., Chatry, C., and Dusseau, L.

Subjects
Measuring instruments -- Analysis, Nuclear reactors -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

A novel real-time optical fibered dosimetry system based on optically stimulated luminescence (OSL) of SrS:Ce,Sm phosphor was developed and is presented. The advantages of this system are the combination of OSL and optical fibers, immediate readout, simplicity of use, low cost, reliability, flexibility, and robustness. Experimental results show an excellent linearity with the dose (0.01 to 6 Gy), repeatability better than 2%, radiation sensitivity up to 80 mV x c[Gy.sup.-1] and accuracy since error on dose is less than 5%. The applications targeted are the measurement of the dose delivered during a treatment in radiation therapy and the monitoring of the dose or dose-rate around or in nuclear reactor and accelerator facilities in high energy physics. Further experiments are still to be conducted in order to fully characterize the system and evaluate the feasibility of each application mentioned. Index Terms--Optical fiber, optically stimulated luminescence, OSL, radiation dosimetry, real-time dosimetry.

Published
2008

4. Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

Author

Boch, J., Saigne, F., Schrimpf, R.D., Vaille, J.-R., Dusseau, L., Ducret, S., Bernard, M., Lorfevre, E., and Chatry, C.

Subjects
Nuclear physics -- Research, Integrated circuits -- Research, Semiconductor chips -- Research, Standard IC, Business, Electronics, Electronics and electrical industries
Abstract

The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation. Index Terms--Bipolar technology, dose rate, enhanced low-dose-rate sensitivity (ELDRS), integrated circuit, switching experiment, total dose.

Published
2005

5. Single event transient propagation through digital optocouplers

Author

Adell, P.C., Mion, O., Schrimpf, R.D., Chatry, C., Calvel, P., and Melotte, M.R.

Subjects
Business, Electronics, Electronics and electrical industries
Abstract

A new approach for assessing the risk of upsetting digital optocouplers due to the propagation of single event transients (SETs) is proposed. The optocoupler's input current ([I.sub.f]) and propagation time ([t.sub.pHL]) are found to be the most critical parameters for this approach. A case study using the 6N140 optocoupler and SETs measured at the output of the National Semiconductor LM139 is detailed to validate the concept. Index Terms--Analog single event transients (SETs), optocouplers, radiation hardness assurance, SET propagation.

Published
2005

6. Proton damage effects on GaAs/GaAlAs vertical cavity surface emitting lasers.

Author

Le Metayer, P., Gilard, O., Germanicus, R., Campillo, D., Ledu, F., Cazes, J., Falo, W., and Chatry, C.

Subjects
IRRADIATION, INDUSTRIAL lasers, ENERGY dissipation, OPTOELECTRONIC devices
Abstract

A series of proton irradiations of GaAs/GaAlAs vertical cavity surface emitting lasers (VCSELs) has been carried out for the purpose of assessing the suitability of these devices for space applications. The irradiations were performed on biased and unbiased devices at energies of 30, 40, 50, and 60 MeV. Both current versus voltage (I–V) and optical power versus current (P–I) characteristics were measured before and after each irradiation phase. A simple circuit equivalent model for the VCSEL has been developed to analyze proton damage effects through the extraction of electrical parameters. The current threshold of VCSEL is shown to be the only important parameter modified by a high fluence (up to 10[sup 12] protons/cm[sup 2]) irradiation. Changes in the threshold current show radiation generated recombination centers to be the main cause of degradation. Due to carrier injection annealing related effects, we observed that unbiased devices show the greatest relative threshold increase (between 15% and 20% at 10[sup 13] protons/cm[sup 2]). The threshold current damage factor was also calculated. The analysis of the I–V characteristics shows that in the range of low fluences (10[sup 10]–10[sup 12] protons/cm[sup 2]) radiation induced ordering effects may compete with the usual radiation degradation that we observed at higher fluences. Consequently, the nonionizing energy loss approach, which is extensively used to predict the degradation of electronic devices under a full spectrum of energetic particles, is deemed to be not yet applicable for prediction of end-of-life performances of VCSELs. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2003
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7. Proton damage effects on GaAs/GaAlAs vertical cavity surface emitting lasers

Author

Metayer, P. Le, Gilard, O., Germanicus, R., Falo, W., Campillo, D., Cazes, J., Ledu, F., and Chatry, C.

Subjects
Irradiation -- Research, Gallium arsenide -- Optical properties, Physics
Abstract

Proton irradiations of GaAs/GaAlAs vertical cavity surface emitting lasers (VCSELS) were carried out to assess their suitability for space applications. The nonionizing energy loss approach is not found to be applicable for prediction of end-of-life performances of VCSELS.

Published
2003

8. Analysis of Single-Event Transients in Analog Circuits

Author

Adell, P., Schrimpf, R. D., Barnaby, H. J., Marec, R., Chatry, C., Calvel, P., Barillot, C., and Mion, O.

Subjects
Analog integrated circuits -- Testing, Error analysis -- Methods, Voltage regulators -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

A new methodology for understanding single-event transient (SET) phenomena in analog circuits is described. Device and circuit simulation techniques are coupled in order to reproduce experimental data obtained from the National Semiconductor LM124 operational amplifier and to determine the most sensitive parts of the integrated circuit. Experimental data obtained at the Physical Nuclear Institute from a low-power voltage regulator that uses the LM124 are also used to illustrate the method.

Published
2000

9. Non-ionizing energy loss: an additional wear-out mechanism in latent reliability degradation

Author

Naceur, M., Privat, A., Touboul, Antoine, Vaillé, J.-R., Lorfèvre, E., Bezerra, F., Chaumont, G., Chatry, N., Chatry, C., Saigné, Frédéric, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), STMicroelectronics, Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2012

10. Investigation of the bias effect on total dose induced degradation on bipolar linear microcircuits

Author

Velo, Y. Gonzalez, Boch, J., Roche, N., Perez, S., Vaillé, J.-R., Dusseau, L., Saigné, Frédéric, Lorfèvre, E., Schrimpf, R. d., Chatry, C., Canals, A., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherches sur les Macromolécules Végétales (CERMAV), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Centre National d'Études Spatiales [Toulouse] (CNES), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2009

11. The use of dose-rate switching experiments to characterize bipolar devices

Author

Boch, J., Velo, Y. Gonzalez, Saigné, Frédéric, Roche, N., Vaillé, J.-R., Dusseau, L., Schrimpf, R. D., Chatry, C., Lorfèvre, E., Ecoffet, R., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2009

14. Wireless passive high-doses radiation sensor

Author

Debourg, E, primary, Rifai, A, additional, Aubert, H., additional, Pons, P., additional, Augustyniak, I., additional, Knapkiewicz, P., additional, Dziuban, J., additional, Matusiak, M., additional, Olszacki, M., additional, Lavielle, D., additional, and Chatry, C., additional

Published
2014
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26. Etude de l'action des polluants atmosphériques sur le massif forestier de Roumare et essai d'évaluation des pertes de production ligneuse

Author

Chatry, C., Unité de recherche Amélioration, Génétique et Physiologie Forestières (AGPF), Institut National de la Recherche Agronomique (INRA), and Ecole Nationale des Ingénieurs des Travaux des Eaux et Forêts (ENITEF), Nogent sur Vernisson, FRA.

Subjects
[SDV]Life Sciences [q-bio], SEINE MARITIME, POLLUTION DE L'AIR
Abstract

*INRA Orléans, Documentation Ardon 45166 Olivet (FRA) Diffusion du document : INRA Orléans, Documentation Ardon 45166 Olivet (FRA)

Published
1975

28. Chipless passive sensor for wireless monitoring of high radiation doses in nuclear infrastructures

Author

Pons, P., Aubert, H., Debour, E., Rifai, A., Olszacki, M., Michal Matusiak, Augustyniak, I., Knapkiewicz, P., Dziuban, J., Lavielle, D., Chatry, C., Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, National Center for Nuclear Research (NCBJ), Wroclaw University of Science and Technology, TRAD [Labège], TRAD, IFFSTTAR, Inria, Université de Nantes, Le Cam, Vincent and Mevel, Laurent and Schoefs, Franck, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
Wireless and smart sensors, Electromagnetic sensors, [MATH.MATH-ST]Mathematics [math]/Statistics [math.ST], Energy SHM applications for power plants, [PHYS.MECA]Physics [physics]/Mechanics [physics], [STAT.TH]Statistics [stat]/Statistics Theory [stat.TH], [SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph]
Abstract

International audience; The dosimetry is one of the crucial techniques that are needed to assure personal safety and facilities security in the areas of high radioactivity as nuclear power plants or powerful experimental research infrastructure (LHC, XFEL, ITER). Until now, the common electronic dosimeters are based on the silicon diodes or field effect transistors what limits the measured dose value up to few Mrad, as the higher levels lead to the device saturation. The other techniques that allows for higher dose measurement (up to 100 Mrad and more) are based mostly on the variation of physic-chemical parameters of different materials but need the post measurement treatment of the sensor that has to be taken out of the monitored zone and use of the special equipment what makes the continuous measurement impossible. Moreover, in case of nuclear reactors the access to the radioactive zones is limited what leads to the measurement frequency in range of a few times per year. The solution that may overcome that problem is the use of the recently developed innovative concept of the passive sensors that are interrogated by the radar technique. Such a solution uses the small (millimeter sized) micro-resonators designed for the ultra high frequency (about 30GHz) that are connected to the antenna and serve as its load. Any change of the resonant frequency of the resonator may be detected as the shift in the radar echo of the antenna. The sensor is interrogated by the directional radar and the reflected signal is analyzed. The associate transduction principle is that the resonator changes its resonant frequency due to the variation of the specific measured physical value like temperature, pressure or humidity. In our case, we proposed to use the known principle of Hydrogen-pressure dosimeters (HPD) wh

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