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Your search keyword '"Boulmer, J."' showing total 185 results
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185 results on '"Boulmer, J."'

1. Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Author

Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Debarre, D., and Mangelinck, D.

Subjects
Condensed Matter - Superconductivity, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. The boron spatial distribution is found to be compatible with local density of states measurements performed by scanning tunneling spectroscopy. These results, combined with the observations of very low impurity level and of a sharp two-dimensional interface between doped and undoped regions show, that the Si:B material obtained by GILD is a well-defined random substitutional alloy endowed with promising superconducting properties., Comment: 4 pages

Published
2011
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2. Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers

Author

Dahlem, F., Kociniewski, T., Marcenat, C., Grockowiak, A., Pascal, L., Achatz, P., Boulmer, J., Debarre, D., Klein, T., Bustarret, E., and Courtois, H.

Subjects
Condensed Matter - Superconductivity, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a homogeneous superconductor, with an energy gap dispersion below +/- 10%. The spectral shape, the amplitude and temperature dependence of the superconductivity gap follow the BCS model, bringing further support to the hypothesis of a hole pairing mechanism mediated by phonons in the weak coupling limit., Comment: 4 pages, 3 figures

Published
2010
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3. Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Author

Marcenat, C., Kacmarcik, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., and Debarre, D.

Subjects
Condensed Matter - Superconductivity
Abstract

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. in Nature (London) 444, 465 (2006)., Comment: 4 pages including 4 figures, submitted to PRB-Rapid Communication

Published
2009
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10. Superconductivity in doped cubic silicon

Author

Bustarret, E., Marcenat, C., Achatz, P., Kačmarčik, J., Levy, F., Huxley, A., Ortega, L., Bourgeois, E., Blase, X., Debarre, D., and Boulmer, J.

Subjects
Environmental issues, Science and technology, Zoology and wildlife conservation
Abstract

Author(s): E. Bustarret (corresponding author) [1, 7]; C. Marcenat (corresponding author) [3, 7]; P. Achatz [1, 3]; J. Kačmarčik [1, 4]; F. Lévy [3]; A. Huxley [3, 8]; L. Ortéga [...]

Published
2006
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14. Pulsed laser etching of silicon: dopant profile modification and dopant desorption induced by surface melting

Author

Desmur, A., Bourguignon, B., Boulmer, J., Ozenne, J.-B., Budin, J.-P., Debarre, D., and Aliouchouche, A.

Subjects
Silicon -- Research, Etching -- Analysis, Annealing -- Analysis, Physics
Abstract

Estimates of laser-induced alterations of dopant profile and desorption for silicon and dopants such as B, As, Sb under laser melting, chlorine-induced chemical etching and laser annealing reveals that surface melting causes laser etching of silicon through chlorine. Desorption, diffusion and separation of dopant atoms influences dopant profile and density. Desorption depends on the dopant atom and is increased by surface melting, resulting in dopant rearrangement and etching of silicon.

Published
1994

18. Realization of Si1−x − yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

Author

Boulmer, J., primary, Boucaud, P., additional, Guedj, C., additional, Débarre, D., additional, Bouchier, D., additional, Finkman, E., additional, Prawer, S., additional, Nugent, K., additional, Desmur-Larré, A., additional, Godet, C., additional, and Roca i Cabarrocas, P., additional

Published
1996
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28. Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

Author

Guedj, C., Boulmer, J., Bouchier, D., Clerc, C., Calvarin, G., Godet, C., Roca I Cabarrocas, Pere, Houze, F., Mencaraglia, D., CSNSM PS1, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), and Lorgeril, Jocelyne

Subjects
[PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
Published
1996

30. Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100)

Author

Boulmer, J., Desmur-Larre, A., Guedj, C., Debarre, D., Boucaud, P., Julien, F.H., Finkman, E., Laval, R., Ozenne, J.B., Yang, H., Bouchier, D., Godet, C., Roca, I Cabarrocas P., Calvarin, G., Clerc, C., Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)

Subjects
[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
Published
1995

32. Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Author

Marcenat, C., primary, Kačmarčík, J., additional, Piquerel, R., additional, Achatz, P., additional, Prudon, G., additional, Dubois, C., additional, Gautier, B., additional, Dupuy, J. C., additional, Bustarret, E., additional, Ortega, L., additional, Klein, T., additional, Boulmer, J., additional, Kociniewski, T., additional, and Débarre, D., additional

Published
2010
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33. Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

Author

Kurdi, M. El, primary, Ngo, T.-P., additional, Checoury, X., additional, Sauvage, S., additional, Fishman, G., additional, Kociniewski, T., additional, Debarre, D., additional, Boulmer, J., additional, Boucaud, P., additional, Damlencourt, J. F., additional, Kermarrec, O., additional, Bensahel, D., additional, Jakomin, R., additional, and Sagnes, I., additional

Published
2009
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