Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100)

Authors :: Boulmer, J.
Desmur-Larre, A.
Guedj, C.
Debarre, D.
Boucaud, P.
Julien, F.H.
Finkman, E.
Laval, R.
Ozenne, J.B.
Yang, H.
Bouchier, D.
Godet, C.
Roca, I Cabarrocas P.
Calvarin, G.
Clerc, C.
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM)
Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Source :: Laser-Induced Thin Film Processing, Laser-Induced Thin Film Processing, Feb 1995, San Jose, United States. pp.367-372
Publication Year :: 1995
Publisher :: HAL CCSD, 1995.

Subjects :: [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]

Language :: English
Database :: OpenAIRE
Journal :: Laser-Induced Thin Film Processing, Laser-Induced Thin Film Processing, Feb 1995, San Jose, United States. pp.367-372
Accession number :: edsair.dedup.wf.001..86f57a6ce3a933aa2076621d901be5f7

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