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218 results on '"Bogdanowicz, J."'

1. Wafer-scale characterization for two-dimensional material layers

Author

Moussa, A., primary, Bogdanowicz, J., additional, Groven, B., additional, Morin, P., additional, Beggiato, M., additional, Saib, M., additional, Santoro, G., additional, Abramovitz, Y., additional, Houchens, K., additional, Ben Nissim, S., additional, Meir, N., additional, Hung, J., additional, Urbanowicz, A., additional, Koret, R., additional, Turovets, I., additional, Lee, B., additional, Lee, W.T., additional, Lorusso, G. F., additional, and Charley, A.-L., additional

Published
2024
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3. Centrality of collisions and total disintegration of nuclei

Author

Suleimanov, M. K., Abdinov, O. B., Anoshin, A. I., Bogdanowicz, J., and Kuznetsov, A. A.

Subjects
High Energy Physics - Experiment
Abstract

The interrelation of the processes of total disintegration of nuclei with the processes, characterized by the "centrality" of collisions and a minimum flow of energy of secondary particles emitted at a zero angle in pC, dC, 4HeC and 12CC interactions, is investigated at 4.2 A GeV/c . The events with total disintegration of nuclei are characterized by a high degree "centrality" of collisions and similar to the events having a minimum flow of energy of particles emitted at a zero angle., Comment: 10 pages

Published
1999

5. Inverses of slopes of invariant inclusive spectra of emitted protons and pi minus mesons in 4HeC and 12CC interactions with the total disintegration of nuclei

Author

Suleimanov, M. K., Abdinov, O. B., Anoshin, A. I., Bogdanowicz, J., and Kuznetsov, A. A.

Subjects
High Energy Physics - Experiment
Abstract

The ideas that extreme states of nuclear matter arise in events with total dis- integration of nuclei (TDN) and as these states arise, the properties of events qualitatively change with the number of protons emitted from the nucleus Q,star- ting from its certain boundary numbe Q*,are used in this paper for the experi- mentally search for extreme states of nuclear matter. For realization of these ideas, the invariant inclusive spectra of protons and pi minus mesons as a func- tion of their kinetic energies T in the lab. system for 4HeC and 12CC interacti- ons at the momentum 4.2 A GeV/c with different values of Q are used. The spect- ra are fitted by the exponential expressions and the Q-dependencies of the in- verses of slopes Ti are studied. It is found that these spectra have two compo- nents and contain the regime change points .In the TDN region the values of Ti for pi minus mesons begin to increase with increasing the number of protons. We consider this increasing to be a signal from the extreme states of nuclear mat- ter. The value of the "temperature" of these states is about 0.140 GeV., Comment: 14 pages

Published
1998

6. Single - particle correlations in events with the total disintegration of nuclei

Author

Suleimanov, M. K., Abdinov, O. B., Anoshin, A. I., Bagirov, A. M., Bogdanowicz, J., and Kuznetsov, A. A.

Subjects
High Energy Physics - Experiment
Abstract

New experimental data on the behaviour of the single-particle two-dimensional correlation functions R versus Q (Q is the number of nucleons emitted from nuc- lei) and Ap (Ap is the mass of projectile nuclei) are presented in this paper. The interactions of protons, d, 4He and 12C nuclei with carbon nuclei (at a momentum of 4.2 A GeV/c) are considered.The values of R are obtained separately for pi minus mesons and protons.In so doing,the values of R are normalized so that -1=

Published
1997
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7. Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET.

Author

Mols, Y., Bogdanowicz, J., Favia, P., Lagrain, P., Guo, W., Bender, H., and Kunert, B.

Subjects
*VERTICAL integration, *METAL oxide semiconductor field-effect transistors, *SILICON nanowires, *FIELD-effect transistors, *SEMICONDUCTOR nanowires, *TRENCHES, *X-ray diffraction, *EPITAXY
Abstract

We report on the uniform selective area growth of InAs and GaSb by metal-organic vapor phase epitaxy on a patterned shallow trench isolation SiO2/Si 300 mm template. High-quality InAs fins are realized via direct InAs nucleation on Si in the trenches. 60° interfacial misfit dislocation arrays formed along the {111} oriented InAs/Si interfaces accommodate most of the lattice mismatch such that threading dislocation generation from residual strain is minimized. GaSb grown on a thick GaAs buffer (partial filling of the trench) suffers from twin formation. The twin density is found to decrease with increasing growth temperature. To maximize the volume of low-defect density material inside the trench, the GaSb growth is initiated as close as possible to the trench bottom. Therefore, uniform high-quality GaSb fins are grown on a very thin low-temperature GaAs and the newly developed InAs seed in the V-groove. High-resolution x-ray diffraction reciprocal space maps show that the InAs and GaSb fins are nearly completely relaxed. The resistivity of undoped and n-doped InAs and undoped and p-doped GaSb fins is measured on as-grown material by micro-4-point-probe without the need for additional complicated device processing. The values are compared to those required for devices as presented in modeling papers. The result is encouraging for the ultra-large-scale integration of vertical nanowire III-V (tunnel) field-effect transistor on 300 mm Si. [ABSTRACT FROM AUTHOR]

Published
2019
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8. Measurement of the apex temperature of a nanoscale semiconducting field emitter illuminated by a femtosecond pulsed laser.

Author

Kumar, A., Bogdanowicz, J., Demeulemeester, J., Bran, J., Melkonyan, D., Fleischmann, C., and Vandervorst, W.

Subjects
*FEMTOSECOND pulses, *PULSED lasers, *ATOM-probe tomography, *ELECTRIC properties of silicon, *METHODOLOGY, *ELECTRIC fields
Abstract

Evaluating the thermal processes occurring inside an illuminated nanoscale semiconducting tip is of utmost importance for the physical understanding of laser assisted atom probe tomography (L-APT). In this paper, we present a methodology to evaluate the temperature at the apex of the tip using L-APT. The method is based on the known exponential dependence of the probability for field evaporation on the temperature and the electric field at the apex. We use this method to gain insights into the effect of tip shape, doping, and laser power on the peak temperature reached at the apex of an illuminated Si tip. [ABSTRACT FROM AUTHOR]

Published
2018
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15. On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography.

Author

Kumar, A., Demeulemeester, J., Bogdanowicz, J., Bran, J., Melkonyan, D., Fleischmann, C., Gencarelli, F., Shimura, Y., Wang, W., Loo, R., and Vandervorst, W.

Subjects
PHOTONIC band gap structures, MICROELECTRONICS, ATOM-probe tomography, THERMODYNAMICS, CLUSTER analysis (Statistics)
Abstract

Ge(1-x)Sn(x) has received a lot of interest for opto-electronic applications and for strain engineering in advanced complementary-metal-oxide-semiconductor technology, because it enables engineering of the band gap and inducing strain in the alloy. To target a reliable technology for mass application in microelectronic devices, the physical problem to be addressed is to unravel the complex relationship between strain relaxation (as induced by the growth of large layer thicknesses or a thermal anneal) and defect formation, and/or stable Sn-cluster formation. In this paper, we study the onset of Sn-cluster formation and its link to strain relaxation using Atom Probe Tomography (APT). To this end, we also propose a modification of the core-linkage [Stephenson et al., Microsc. Microanal. 13, 448 (2007)] cluster analysis method, to overcome the challenges of limited detection efficiency and lateral resolution of APT, and the quantitative assessment for very small clusters (<40 atoms) embedded in a random distribution of Sn-atoms. We concluded that the main relaxation mechanism for these layers is defect generation (misfit dislocations, threading dislocations, etc.), irrespective of the cause (thickness of layer or thermal anneal) of relaxation and is independent of the cluster formation. The low thermodynamic solubility limit of Sn in Ge seems to be the driving force for Sn-cluster formation. Finally, we also discuss the spatial distribution of Sn in clusters and relate them to the theoretically predicted stable Sn clusters [Ventura et al., Phys. Rev. B 79, 155202 (2009)]. [ABSTRACT FROM AUTHOR]

Published
2015
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18. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

Author

Porret, C., primary, Hikavyy, A., additional, Granados, J. F. Gomez, additional, Baudot, S., additional, Vohra, A., additional, Kunert, B., additional, Douhard, B., additional, Bogdanowicz, J., additional, Schaekers, M., additional, Kohen, D., additional, Margetis, J., additional, Tolle, J., additional, Lima, L. P. B., additional, Sammak, A., additional, Scappucci, G., additional, Rosseel, E., additional, Langer, R., additional, and Loo, R., additional

Published
2019
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19. A HUGE LEIOMYOMA OF THE KIDNEY: A RARE BENIGN TUMOR.

Author

Mbwambo, O. J., Kajerero, V. M., Amsi, P., Mnango, L. F., Mbwambo, J. S., Bright, F., Mteta, A. K., Bogdanowicz, J., and Ngowi, B. N.

Subjects
KIDNEY tumors, SMOOTH muscle diseases, HIV infections, VIRUS diseases, GENETIC mutation
Abstract

Leiomyoma of the kidney is a rare benign tumor originating from smooth muscle. Risk factors for leiomyoma include HIV infection, Ebstein bar virus infection, tuberous sclerosis and genetic mutations. Clinical and radiological differentiation of renal leiomyoma from other renal tumors including malignant tumors still remains a challenge and therefore the only way of differentiating it from rest is by histopathological examination. We report a case of this condition in 43 years old female who presented with flank mass and pain. [ABSTRACT FROM AUTHOR]

Published
2021

20. Mobility and Carrier Concentration Measurements on nm-Wide Semiconductor Fins

Author

Witthøft, M.-L., Folkersma, S., Bogdanowicz, J., Marangoni, T., Mackenzie, D., Vohra, A., Porret, C., Loo, R., Henrichsen, H. H., Hansen, O., Vandervorst, W., Petersen, D.H., Witthøft, M.-L., Folkersma, S., Bogdanowicz, J., Marangoni, T., Mackenzie, D., Vohra, A., Porret, C., Loo, R., Henrichsen, H. H., Hansen, O., Vandervorst, W., and Petersen, D.H.

Published
2018

30. Impact of the apex of an elongated dielectric tip upon its light absorption properties

Author

Bogdanowicz, J., Gilbert, M., Koelling, S., Vandervorst, W., and Publica

Abstract

This paper discusses the impact of the hemispherical ending of a conical dielectric tip on its optical absorption capabilities. We show that the bottleneck for light coupling via the apex is its ability to resonantly interact with the incident light, which is only possible for apex radii commensurate with the wavelength. Once light has been fed into the apex, however, the fundamental guided mode of the dielectric tip is excited independently from the apex size. The existence and propagation of the fundamental mode from the apex into the shank are supported experimentally by the observation of periodic ripples close to the apex of a silicon tip irradiated with high-fluence green laser pulses. The periodicity and attenuation of these ripples along the tip axis are in excellent agreement with the theoretical properties of the fundamental guided mode.

Published
2014

32. Characteristics ofπ − production in the collisions of 4.2 GeV/c/nucleond, α and12C beams with tantalum

Author

Agakishiev, H. H., Angelov, N., Ahababian, N., Baatar, T., Bałdin, A. M., Bartke, J., Bogdanowicz, J., Cheplakov, A. P., Didenko, L. A., Dzhmukhadze, S. V., Gasparian, A. P., Gudima, K. K., Grigalashvili, N. S., Grishin, V. G., Ivanovskaja, I. A., Jenik, L., Kanarek, T., Kvatadze, R. A., Kładnitskaya, E. N., Kopylova, D. K., Kowalski, M., Lyubimov, V. B., Mehtiev, R. R., Nikitina, V. E., Popova, V. M., Shcheglova, L. M., Shklovskaya, A. I., Simic, L., Solomin, A. N., Soloviev, M. I., Sulejmanov, M. K., Toneeva, G. P., Toneev, V. D., Abdinov, O. B., Backovic, S., Damianovic, V., Krpic, D., Krmpotic, D., Drndarevic, S., Balea, E., Balea, O., Boldea, V., Hakman, V., Ponta, T., Erofeeva, I. N., Murzin, V. S., Smirnova, L. N., Melnikova, N. N., Lyutov, S. I., Korbel, Z., Trka, T., Trkova, Ya., Grekova, L. D., Kerachev, P., Markov, P., Semerdzhiev, H., Chandraa, B., Batmunh, D., Tegoo, R., Tuvdendorz, D., Armutlijsky, D., Kocznev, H., Prokopeva, S., Białkowska, H., Kiełczewska, D., and Lang, K.

Published
1982
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33. Size of the proton emission region inp-C,d-C, α-C and C-C interactions at 4.2 GeV/c per incident nucleon from two-proton correlations

Author

Agakishiyev, G. N., Mekhteev, R. R., Boldea, V., Ditza, S., Bartke, J., Kowalski, M., Armutliyski, D., Bogdanowicz, J., Cheplakov, A. P., Didenko, L. A., Gasparian, A. P., Grishin, V. G., Ivanovskaya, I. A., Kanarek, T., Kladnitskaya, E. N., Kopylova, D. K., Lyubimov, V. B., Miller, K., Nikitina, V. F., Pluta, J., Soloviev, M. I., Togoo, R., Toneeva, G. P., Chubarian, M., Bekmirzayev, R. N., Sherkulov, U. D., Metreveli, Z. V., and Strugalski, Z.

Published
1987
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34. Multiplicity, momentum and angular distributions of protons from the interactions ofp, d, α andC with carbon at 4.2 GeV/c/nucleon momentum

Author

Armutlisky, D., Bogdanowicz, J., Didenko, L. A., Gasparian, A. P., Griszin, W. G., Ivanowskaya, L. A., Iovchev, K. I., Kanarek, T., Kladnitskaya, E. N., Kopylova, D. K., Lyubimov, W. B., Maneva, G. M., Miller, K., Nikitina, W. F., Pluta, J., Soloviev, M. I., Temnikov, P. P., Togoo, R., Toneev, W. D., Cheplakov, A. P., Chasnikov, I. Ya., Izbasarov, M. I., Vinitsky, A. Kh., Abdinov, O. B., Agakishiyev, H. N., Mehtiev, R. R., Backovic, S., Drandarevic, S., Krpic, D., Rak, L., Simic, L., Balea, E., Balea, O., Boldea, V., Dica, S., Ponta, T., Bartke, J., Kowalski, M., Gudima, K. K., Keloglu, Yu. P., Hansgen, K., Erofeeva, I. N., Melnikova, N. N., Murzin, V. S., Popova, V. M., Sivoklokov, C. Yu., Solomin, A. N., Shcheglova, L. M., Toneeva, G. P., Dolejsi, J., Trka, Z., Trkova, J., Bekmirzaev, R. N., Ismatova, F. A., Muminov, M. M., Sharipova, S. A., Sherkulov, U. D., Suvanov, I., Angelov, N., Akhababian, N., Grekova, L., Georgiev, P., Lukarska, I., Markov, P. K., Semerdzhiev, H., Edgarov, S. O., Inogamov, S. V., Kabilova, A. T., Yuldashev, A. A., Yuldashev, B. C., Amaglobeli, N. S., Dasaeva, M. A., Grigalashivili, N. S., Matreveli, Z. V., Tevzadze, Yu. V., Topuridze, M. V., Baatar, C., Batsaikhan, C., Sharkhu, G., Tuvdendorzh, D., Prokopieva, S., Białkowska, H., Chubarian, M. Ya., Gulkanian, G. P., Kirakosian, Z. A., Korchagin, S. A., and Ravinovich, L. M.

Published
1987
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36. Multiplicity, momentum and angular characteristics of π− mesons forpC,dC, αC and CC interactions at 4.2 GeV/c per nucleon

Author

Agakishiyev, H. N., Akhababian, N., Armutlijsky, D., Baldin, A. M., Bartke, J., Bekmirsaev, R., Bogdanowicz, J., Cheplakov, A. P., Didenko, L. A., Gasparian, A. P., Grigalashvili, N. S., Grishin, V. G., Gudima, K. K., Iovchev, K., Ivanovskaya, I. A., Kanarek, T., Kladnitskaya, E. N., Kopylova, D. K., Kowalski, M., Lyubimov, V. B., Mehtiyev, R. R., Metreveli, Z. V., Nikitina, V. F., Soloviev, M. I., Toneev, V. D., Chasnikov, I. Ya., Izbasarov, M. I., Vinitsky, A. Kh., Abdinov, O. B., Backovic, S., Drndarevic, S., Krmpotic, D., Krpic, D., Rak, L., Simic, L., Balea, E., Balea, O., Boldea, V., Hacman, S., Ponta, T., Keloglu, Yu. P., Hansgen, K., Erofeeva, I. N., Lyutov, S. I., Melnikova, N. N., Murzin, V. S., Popova, V. M., Shcheglova, L. M., Sivoklokov, S. Yu., Smirnova, L. N., Solomin, A. N., Toneeva, G. P., Dolejsi, J., Trka, Z., Trkova, Ya., Ismatova, F. A., Muminov, M. M., Suvanov, I., Angelov, N., Grekova, L. D., Kerachev, P., Markov, P., Penev, V., Semerdzhiev, H., Temnikov, P. P., Azimov, S. A., Edgorov, S. O., Inogamov, Sh. V., Yuldashev, A. A., Yuldashev, B. S., Amaglobeli, N. S., Dasaeva, M. A., Tevzadze, Yu. V., Baatar, Ts., Batmunh, D., Togoo, T., Tuvdendorzh, D., Kochnev, N. I., Prokopieva, S., Białkowska, H., Gulkanian, G. P., Kirakosian, Z. A., Korchagin, S. A., and Ravinovich, I. M.

Published
1985
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37. Peripheral and central nucleus-nucleus collisions at 4.2 GeV/c per nucleon

Author

Agakishiev, H. N., Abdinov, O. B., Mekhdiev, R. R., Suleimanov, M. K., Ahababian, N., Baatar, Ts., Baldin, A. M., Bartke, J., Bogdanowicz, J., Cheplakov, A. P., Gasparian, A. P., Grishin, V. G., Ivanovskaya, I. A., Kanarek, T., Kladnitskaya, E. N., Kondor, E., Kopylova, D. K., Kowalski, M., Kvatadze, R. A., Lyubimov, V. B., Nikitina, V. F., Soloviev, M. I., Toneev, V. D., Chasnikov, I. Ya., Izbasarov, M. I., Vinitsky, A. Kh., Backović, S., Damianović, V., Drndarević, S., Krmpotić, D., Krpić, D., Simić, L., Balea, E., Balea, O., Boldea, V., Hacman, S., Ponta, T., Gudima, K. K., Keloglu, Yu. P., Anoshin, A. I., Erofeeva, I. N., Didenko, L. A., Lyutov, S. I., Melnikova, N. N., Murzin, V. S., Popova, V. M., Sarycheva, L. I., Shcheglova, L. M., Smirnova, L. N., Solomin, A. N., Toneeva, G. P., Korbel, Z., Trka, Z., Trkova, Ya., Ismatova, F. A., Muminov, M. M., Suvonov, I., Angelov, N., Grekova, L. D., Kerachev, P., Semerdzhiev, H., Temnikov, P. P., Azimov, S. A., Edgorov, S. O., Inogamov, Sh. V., Yuldashev, A. A., Yuldashev, B. S., Amaglobeli, N. S., Grigalashvili, N. S., Dasaeva, M. A., Metreveli, Z. V., Tevzadze, Yu. V., Topuridze, M. V., Tuvdendorzh, D., Sharkhu, G., Armutlijsky, D., Kochnev, N., Prokopieva, S., Białkowska, H., Arakelian, S. G., Gulkanian, G. R., Kirakosian, Z. A., Korchagin, S. A., Ravinovich, I. M., and Vartanian, V. A.

Published
1983
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44. Optimal laser positioning for laser-assisted atom probe tomography

Author

Koelling, S., Innocenti, Nicolas, Bogdanowicz, J., Vandervorst, W., Koelling, S., Innocenti, Nicolas, Bogdanowicz, J., and Vandervorst, W.

Abstract

Laser-assisted atom probe tomography is a material analysis method based on field evaporating ions from a tip-shaped sample by a combination of a standing electric held and a short (pico- or lemtosecond) laser pulse. The laser-pulse thereby acts as a starting signal for a time-of-flight mass analysis of the ions whereby the thermal energy deposited in the tip by the laser pulse temporarily enables the evaporation of ions from the surface of the tip. Here we will use simulations of the laser absorption on a silicon tip to find the optimal position of the laser spot in order to maximize the mass resolution achieved during the experiments. We will confirm our simulations by showing that the experimentally observed mass resolution indeed changes as predicted by the simulations., QC 20131011

Published
2013
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