1. Study of Si-Ge interdiffusion with phosphorus doping.
- Author
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Feiyang Cai, Anjum, Dalaver H., Xixiang Zhang, and Xia, Guangrui (Maggie)
- Subjects
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PHOSPHORUS , *DIFFUSION , *CATALYTIC doping , *FERMI level , *THERMAL analysis - Abstract
Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0:75 < xGe < 1, a mid-1018 to low-1019 cm-3 P doping, and a dislocation density of 108 to 109 cm-2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2-8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n²=n²i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2- defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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