Author: "ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)" - Searchworks@Jio Institute Digital Library Search Results

Your search keyword '"ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)"' showing total 69 results

Start Over Author "ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)"

69 results on '"ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)"'

1. Effects of zinc nitrate and HMTA on the formation mechanisms of ZnO nanowires on Au seed layers

Author: Clément Lausecker, Bassem Salem, Xavier Baillin, Vincent Consonni, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), the French RENATECH network, ANR-17-CE09-0033,ROLLER,Réseaux ordonnés de nanofils de ZnO résistifs et unipolaires pour capteurs souples adaptés aux milieux biologiques(2017), ANR-17-CE24-0003,DOSETTE,Hétérostructures de Type II Basées sur des Nanofils de ZnO Ordonnés pour les Photodétecteurs UV Auto-Alimentés(2017), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and ANR-10-EQPX-0033,IMPACT,Caractérisation et Test In-situ des Matériaux, Procédés et des Architectures(2010)
Subjects: chemical bath deposition, ZnO nanowires, Au seed layers, HMTA, General Materials Science, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, [CHIM.INOR]Chemical Sciences/Inorganic chemistry, Condensed Matter Physics
Abstract: International audience; The ability to form ZnO nanowire arrays with dedicated morphological properties is crucial for the development of efficient piezoelectric devices such as piezoelectric nanogenerators and sensors. However, their integration typically requires the use of metallic seed layers for their synthesis by chemical bath deposition, from which their morphological control is still very limited. In this context, the formation mechanisms of ZnO nanowires from Au seed layers are carefully investigated for different precursor (i.e., zinc nitrate and hexamethylenetetramine (HMTA)) concentrations in the range of 1–100 mM, where drastic variations of the morphological properties are observed. By coupling $in\ situ$ pH measurements and thermodynamic computations, we perform an in-depth analysis of the thermodynamic properties of the chemical bath, where the predominant role of the NO$_3$$^–$ ions in the evolution of the pH of the chemical bath is revealed. An original approach is further developed to carefully determine the hydrolysis ratio of HMTA molecules, which is found to vary in the range of 20–45% with the precursor concentration, and to directly impact the supersaturation ratio of Zn(II) species. From these results, we identify the presence of three different growth regimes depending on the precursor concentrations, each of them giving rise to ZnO nanowire arrays with specific morphological properties. These results highlight the critical importance of the thermodynamic properties of the chemical bath in the formation process of ZnO nanowires from Au seed layers and provide key elements of understanding to efficiently optimize their morphology for their integration into piezoelectric devices.
Published: 2023
Full Text: View/download PDF

2. Short-range mechanisms in the creation of a ZnO/InGaAs interface

Author: Gianluca Ciatto, Evgeniy V. Skopin, Marie-Ingrid Richard, Dillon D. Fong, Hubert Renevier, Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Material Science Division [ANL] (MSD), Argonne National Laboratory [Lemont] (ANL), ANR-11-NANO-0014,MOON,Optimisation de la croissance par MOCVD/ALD d' oxyde nanostructuré pour la conversion de l'énergie solaire par le couplage entre la modélisation et l'analyse in situ par le rayonnement synchrotron et par des méthodes optiques(2011), ANR-15-IDEX-0002,UGA,IDEX UGA(2015), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: [PHYS]Physics [physics], General Materials Science, General Chemistry, Condensed Matter Physics
Abstract: International audience; We perform quantitative analysis of the X-ray absorption data taken in situ during the earliest cycles of the ZnO atomic layer deposition on atomically flat InGaAs (001) surfaces. As deposition progresses, we observe a transition from an amorphous structure to a nanocrystalline one. The former retains much of the characteristics of a ZnO crystal in the Zn coordination shell, while the latter shows atomic ordering up to at least the third neighbor shell of Zn atoms, despite the absence of Bragg X-ray diffraction peaks. We show that the different chemical preparation of the substrate surface affects the ZnO local structure and that, counterintuitively, a stronger short-range order is obtained in the nanostructures characterized by lower local order at the interface. We propose a model that accounts for these findings.
Published: 2022
Full Text: View/download PDF

3. La$_2$NiO$_{4+\delta}$ ‐based memristive devices integrated on Si‐based substrates

Author: Thoai‐Khanh Khuu, Gauthier Lefèvre, Carmen Jiménez, Hervé Roussel, Adeel Riaz, Serge Blonkowski, Eric Jalaguier, Ahmad Bsiesy, Mónica Burriel, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), the financial support of the 'Nanosciences aux limites de la Nanoélectronique' Fundation and CNRS Renatech network, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), ANR-14-ACHN-0012,MicroSwitch,Ingénierie de couches minces d'oxydes pour les dispositifs futurs de la micro et nanoélectronique(2014), and ANR-10-LABX-0044,CEMAM,Center of Excellence in Multifunctional Architectured Materials(2010)
Subjects: anthanum nickelate, valence change memories (VCMs), Mechanics of Materials, memristive devices, resistive switching, General Materials Science, [CHIM.MATE]Chemical Sciences/Material chemistry, lanthanum nickelate, metal organic chemical vapor deposition (MOCVD), Industrial and Manufacturing Engineering
Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/admt.202200329.; International audience; Valence change memories, in which internal redox reactions control the change in resistance are promising candidates for resistive random accessmemories (ReRAMs) and neuromorphic computing elements. In this context, La$_2$NiO$_{4+\delta}$ (L2NO4), a mixed ionic-electronic conducting oxide, well known for its highly mobile oxygen interstitial ions, emerges as a potential switching material for novel L2NO4-based memristive devices. However, their integration in complementary metal oxide semiconductor (CMOS) technology still has to be demonstrated, as the major focus of previous studies has been carried out on epitaxial films grown on single crystals. In this work, the optimization of the deposition temperature and precursor solution composition is presented, allowing to obtain high-quality polycrystalline L2NO4 thin films grown by metal organic chemical vapor deposition on a platinized silicon substrate, and to use these films to build memristive devices in vertical configuration with Ti top electrodes. A bipolar analog-type transition in resistance can be achieved in Ti/L2NO4/Pt memristive devices. While the “forming” process required for the devices based on nonoptimized L2NO4 thin films is considered as a drawback, the Ti/optimized L2NO4/Pt devices are formingfree and exhibit a good cyclability. These results prove the switching response of L2NO4-based devices in a vertical configuration for the first time.
Published: 2022
Full Text: View/download PDF

4. Role of working temperature and humidity in acetone detection by SnO$_2$ covered ZnO nanowire network based sensors

Author: Fanny Morisot, Claudio Zuliani, Mireille Mouis, Joaquim Luque, Cindy Montemont, Tony Maindron, Céline Ternon, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), ams Sensors UK ltd, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Minatec, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016)
Subjects: SnO2 sensing layer, General Chemical Engineering, ZnO nanowire networks, microhotplate, General Materials Science, [SDV.IB]Life Sciences [q-bio]/Bioengineering, temperature effect, acetone detection, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, humidity effect
Abstract: Special Issue "Semiconductor Nanowires: From Synthesis and Characterization to Devices"; International audience; A randomly oriented nanowire network, also called nanonet (NN), is a nano-microstructure that is easily integrated into devices while retaining the advantages of using nanowires. This combination presents a highly developed surface, which is promising for sensing applications while drastically reducing integration costs compared to single nanowire integration. It now remains to demonstrate its effective sensing in real conditions, its selectivity and its real advantages. With this work, we studied the feasibility of gaseous acetone detection in breath by considering the effect of external parameters, such as humidity and temperature, on the device’s sensitivity. Here the devices were made of ZnO NNs covered by SnO$_2$ and integrated on top of microhotplates for the fine and quick control of sensing temperature with low energy consumption. The prime result is that, after a maturation period of about 15 h, the devices are sensitive to acetone concentration as low as 2 ppm of acetone at 370 °C in an alternating dry and wet (50% of relative humidity) atmosphere, even after 90 h of experiments. While still away from breath humidity conditions, which is around 90% RH, the sensor response observed at 50% RH to 2 ppm of acetone shows promising results, especially since a temperature scan allows for ethanol’s distinguishment.
Published: 2022
Full Text: View/download PDF

5. Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

Author: Céline Ternon, Valérie Stambouli, Fanny Morisot, Ganesh Jayakumar, Nicolas Spinelli, Mireille Mouis, Christoforos G. Theodorou, Laetitia Rapenne, Per-Erik Hellström, X. Mescot, Bassem Salem, Monica Vallejo-Perez, Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Royal Institute of Technology [Stockholm] (KTH ), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), ANR-16-PILO-0003,Convergence,Frictionless Energy Efficient Convergent Wearables For Healthcare and Lifestyle Applications(2016), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016)
Subjects: Materials science, GOPS-based functionalization, General Chemical Engineering, Aptamer, Nanowire, nanonet, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Article, lcsh:Chemistry, Thrombin, Scanning transmission electron microscopy, Fluorescence microscope, medicine, field effect transistors, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, UV-assisted functionalization, ComputingMilieux_MISCELLANEOUS, 021001 nanoscience & nanotechnology, Grafting, 0104 chemical sciences, silicon nanowires, lcsh:QD1-999, Surface modification, Field-effect transistor, 0210 nano-technology, aptamer grafting, medicine.drug
Abstract: Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA&ndash, 15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electrical properties of the Si NN&ndash, FETs was studied. First, the results that were obtained for the optimization of the (3-Glycidyloxypropyl)trimethoxysilane (GOPS)-based biofunctionalization process by using UV radiation are reported. The biofunctionalized devices were analyzed by atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM), proving that TBA&ndash, 15 probes were properly grafted on the surface of the devices, and by means of epifluorescence microscopy it was possible to demonstrate that the UV-assisted GOPS-based functionalization notably improves the homogeneity of the surface DNA distribution. Later, the electrical characteristics of 80 devices were analyzed before and after the biofunctionalization process, indicating that the results are highly dependent on the experimental protocol. We found that the TBA&ndash, 15 hybridization capacity with its complementary strand is time dependent and that the transfer characteristics of the Si NN&ndash, FETs obtained after the TBA&ndash, 15 probe grafting are also time dependent. These results help to elucidate and define the experimental precautions that must be taken into account to fabricate reproducible devices.
Published: 2020
Full Text: View/download PDF

6. Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor

Author: Nader Sadeghi, Robert Soriano, Gilles Cunge, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: inorganic chemicals, 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Absorption spectroscopy, Analytical chemistry, 02 engineering and technology, Surfaces and Interfaces, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Dissociation (chemistry), Surfaces, Coatings and Films, Volumetric flow rate, Delocalized electron, [SPI]Engineering Sciences [physics], 0103 physical sciences, Capacitively coupled plasma, Emission spectrum, 0210 nano-technology, Spectroscopy, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; Vacuum ultraviolet-absorption spectroscopy (AS) and emission spectroscopy (ES) from delocalized probe plasma are implemented in the downstream chamber of a soft-etch industrial plasma reactor. A capacitively coupled plasma plasma, running in the upper compartment in He/NF$_3$/NH$_3$/H$_2$ mixtures at about 1 Torr, produces reactive species which flow through a shower head into a downstream chamber, where they can etch different μ-electronic materials: Si, SiO$_2$, SiN, etc. The ES reveals the presence of F atoms, while the dissociation rates of NF$_3$ and NH$_3$ are deduced from the AS, as well as the density of HF molecules, produced by chemical chain-reactions between dissociation products of NF$_3$, NH$_3$, and H$_2$. The variations of HF density as a function of the NH$_3$ flow rate suggest the possible formation of NH$_4$F molecules in the plasma
Published: 2020
Full Text: View/download PDF

7. Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template

Author: Y. Bogumilowicz, Mickael Martin, Thierry Baron, Sylvain David, F. Ducroquet, R. Alcotte, T. Cerba, J. Moeyaert, Franck Bassani, Patrice Gergaud, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and ANR-13-NANO-0001,MOSINAS,MOSFET à hétérostructure et film ultra mince d'InAs sur substrat silicium(2013)
Subjects: Silicon, Materials science, Thin films, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 01 natural sciences, Gallium arsenide, Metalorganic vapor phase epitaxy, Electrical resistivity and conductivity, 0103 physical sciences, Materials Chemistry, Surface roughness, Thin film, [PHYS]Physics [physics], 010302 applied physics, business.industry, Doping, Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business, Semiconducting III-V materials
Abstract: International audience; Integration of III-V semiconductors on a Si platform is interesting for both nanoelectronic and optoelectronic devices. Among the different challenges, the formation of low resistive contacts remains essential. In this paper, the growth by metalorganic chemical vapor deposition of thin InAs film as intermediate layer between the III-V materials and the metal has been studied on different templates: Si(100), GaAs/Si(100) and In0.53Ga0.47As/InP/GaAs/Si(100). We have shown that the formation of a continuous layer with low surface roughness is obtained at a growth temperature below 500 °C with a two steps growth mode. The influence of the substrate on which the InAs is deposited, is investigated through morphological and structural properties. We observed an evolution of the InAs surface morphology versus the templates used. The surface roughness value obtained is 2.5 nm, 0.9 nm and 2 nm respectively for a 30 nm InAs layer grown on Si(100), GaAs/Si(100) and In0.53Ga0.47As/InP/GaAs/Si (100). Structural characterization shows that InAs crystal quality is better when GaAs/Si(100) are used as templates compared to growth on Si(100) and In0.53Ga0.47As/InP/GaAs/Si(100). The n-type doping using silicon as impurity allows a doping level of 5 ×1019 cm−3 for all InAs layers, which favors the formation of lowresistance contacts. Moreover we measured aa minimum resistivity of 6 ×10−4 Ω·cm−1 for InAs on Si(100) and 10−4 Ω·cm−1 for InAs on GaAs/Si(100) and In0.53Ga0.47As/InP/GaAs/Si(100).
Published: 2018
Full Text: View/download PDF

8. Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

Author: B. Mohamad, Gerard Ghibaudo, Gilles Reimbold, Charles Leroux, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)
Subjects: Materials science, Analytical chemistry, Equivalent oxide thickness, 02 engineering and technology, 01 natural sciences, Capacitance, law.invention, law, Gate oxide, 0103 physical sciences, Materials Chemistry, Work function, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Thin film, 010302 applied physics, business.industry, Transistor, Observable, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Dipole, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; For advanced gate stacks, effective work function (WFeff) and equivalent oxide thickness (EOT) are fundamental parameters for technology optimization. On FDSOI transistors, and contrary to the bulk technologies, while EOT can still be extracted at strong inversion from the typical gate-to-channel capacitance (Cgc), it is no longer the case for WFeff due to the disappearance of an observable flat band condition on capacitance characteristics. In this work, a new experimental method, the Cbg(VBG) characteristic, is proposed in order to extract the well flat band condition (VFB, W). This characteristic enables an accurate and direct evaluation of WFeff. Moreover, using the previous extraction of the gate oxide (tfox), and buried oxide (tbox) from typical capacitance characteristics (Cgc and Cbc), it allows the extraction of the channel thickness (tch). Furthermore, the measurement of the well flat band condition on Cbg(VBG) characteristics for two different Si and SiGe channel also proves the existence of a dipole at the SiGe/SiO2 interface.
Published: 2018
Full Text: View/download PDF

9. Interesting aspects of electronic transport along and across grain boundaries in 2D materials

Author: Cresti, Alessandro, Cresti, Alessandro, Laboratoires d'excellence - Minatec Novel Devices Scaling Laboratory - - MINOS Lab2010 - ANR-10-LABX-0055 - LABX - VALID, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), GDR-I Graphene & Co, GDR PULSE (Processus ULtimes d’épitaxie de Semiconducteurs), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat]
Abstract: International audience
Published: 2020

10. Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder

Author: Mireille Mouis, Kan-Hao Xue, Jejune Park, François Triozon, Alessandro Cresti, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Huazhong University of Science and Technology [Wuhan] (HUST), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: Materials science, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electron transport chain, chemistry.chemical_compound, chemistry, Chemical physics, 0103 physical sciences, Grain boundary, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Molybdenum disulfide, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019
Full Text: View/download PDF

11. Grain boundaries in transition metal dichalcogenides: Electron transport properties

Author: Park, Jejune, Mouis, Mireille, Triozon, François, Kan-Hao, Xue, Cresti, Alessandro, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Huazhong University of Science and Technology [Wuhan] (HUST), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Cresti, Alessandro, and Laboratoires d'excellence - Minatec Novel Devices Scaling Laboratory - - MINOS Lab2010 - ANR-10-LABX-0055 - LABX - VALID
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

12. Electron transport along and through MoS2 grain boundaries

Author: Park, Jejune, Mouis, Mireille, Triozon, François, Kan-Hao, Xue, Cresti, Alessandro, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Huazhong University of Science and Technology [Wuhan] (HUST), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Cresti, Alessandro, and Laboratoires d'excellence - Minatec Novel Devices Scaling Laboratory - - MINOS Lab2010 - ANR-10-LABX-0055 - LABX - VALID
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

13. InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Author: J. Moeyaert, P. Bezard, Mickael Martin, Sylvain David, P. Hauchecorne, Georges Beainy, R. Alcotte, E. Eustache, Bassem Salem, M. Bawedin, T. Cerba, Thierry Baron, Gilles Patriarche, Eric Tournié, Franck Bassani, Hervé Boutry, Xavier Chevalier, G. Lombard, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Arkema (ARKEMA), Arkema (Arkema), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and ANR-15-IDEX-0002,UGA,IDEX UGA(2015)
Subjects: Materials science, Fabrication, 02 engineering and technology, Substrate (electronics), Field effect transistors, 01 natural sciences, Inorganic Chemistry, Etching (microfabrication), High electron mobility transistors, 0103 physical sciences, Materials Chemistry, Lamellar structure, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Thin layers, Semiconducting III–V materials, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Etching, Organometallic vapor phase epitaxy, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Layer (electronics)
Abstract: International audience; We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (0 0 1)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20 nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30 nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15 nm spaced by almost 10 nm. Early electrical characterizations exhibit a current flow through the connected fins.
Published: 2019
Full Text: View/download PDF

14. GaAs WET and Siconi Cleaning Sequences for an Efficient Oxide Removal

Author: Pascal Besson, Laurent Vallier, M. C. Roure, Mickael Martin, Jean-Paul Barnes, M. Rebaud, Virginie Loup, P.E. Raynal, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Equipex IMPACT program [ANR-10-EQX-33], and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: 010302 applied physics, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Materials science, chemistry, Chemical engineering, 0103 physical sciences, Oxide, 02 engineering and technology, 021001 nanoscience & nanotechnology, 0210 nano-technology, 01 natural sciences, Electronic, Optical and Magnetic Materials
Abstract: International audience; Before metal deposit or epitaxial regrowth steps, efficient surface preparations are mandatory in order to remove both contaminants (C, F) and surface oxides. In this paper, we assess several cleaning sequences and compare their efficiency toward GaAs oxides removal. As III/V materials are very reactive in the air, in-situ surface preparation schemes (conducted for instance in a Siconi chamber) might be useful on GaAs surfaces. This way, the queue-time issues associated with wet surface preparations could be avoided. In this study, GaAs substrates were chemically oxidized to first characterize the oxide removal efficiency of HF, HCl and Siconi processes. Then, a new surface preparation strategy was proposed based on i) a wet chemical treatment followed by ii) a standard Siconi process. In situ Parallel Angle Resolved X-ray Photoelectron Spectroscopy was used to study the chemical composition of the native or chemical oxides and evaluate the impact of the various treatments on the GaAs surface. SIMS analyses were used to measure/quantify the efficiency of surface preparations on Carbon and Arsenic / Gallium oxides removal.
Published: 2019
Full Text: View/download PDF

15. Impact of edge roughness on the electron transport properties of MoS2 ribbons

Author: François Triozon, Alessandro Cresti, Jejune Park, Mireille Mouis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: [PHYS]Physics [physics], Materials science, Condensed matter physics, Mean free path, General Physics and Astronomy, Conductance, 02 engineering and technology, Surface finish, Edge (geometry), 021001 nanoscience & nanotechnology, 01 natural sciences, Electron transport chain, [SPI]Engineering Sciences [physics], Nanoelectronics, 0103 physical sciences, Ribbon, Nanometre, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology
Abstract: International audience; Edge roughness is expected to play a major role in narrow ribbons obtained from two-dimensional materials, due to the large length/surface ratio of the disordered edges with respect to the whole system surface. In the case of semiconducting transition metal dichalcogenides, a physical and quantitative understanding of the impact of edge roughness on the transport properties of ribbons with nanometer widths is essential in view of their potential applications in ultrascaled nanoelectronics. By means of atomistic quantum transport simulations, we show that the conductance due to edge states within the bulk gap is strongly suppressed by roughness. The corresponding localization length is found to be in the order of few nanometers. At low carrier energies outside the gap, edge roughness drives the system into the diffusive transport regime. The study of the mean free path, under different conditions of roughness and for different ribbon widths, shows that the conductance is moderately affected for widths above 10 nm and lengths in the order of 100 nm, with a more significant degradation for ultra-narrow ribbons
Published: 2018
Full Text: View/download PDF

16. Simulation of electron transport in rough MoS2 ribbons

Author: Park, Jejune, Mouis, Mireille, Triozon, François, Cresti, Alessandro, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Cresti, Alessandro, and Laboratoires d'excellence - Minatec Novel Devices Scaling Laboratory - - MINOS Lab2010 - ANR-10-LABX-0055 - LABX - VALID
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract: session: Electronic properties; International audience
Published: 2018

17. Evidence of fast and low-voltage A2RAM ‘1’ state programming

Author: Joris Lacord, Sorin Cristoloveanu, Maryline Bawedin, Jean-Charles Barbe, Sebastien Martinie, Francois Tcheme Wakam, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016)
Subjects: 010302 applied physics, Silicon, Computer science, chemistry.chemical_element, 02 engineering and technology, band-to-band tunneling, TCAD simulation, 021001 nanoscience & nanotechnology, programming methodology, 01 natural sciences, 1T-DRAM, Software development process, Matrix (mathematics), Impact ionization, chemistry, 0103 physical sciences, Electronic engineering, State (computer science), impact ionization, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Low voltage, Quantum tunnelling, A2RAM, Voltage
Abstract: session Memoty (7.4); International audience; For the first time, we demonstrate a new concept for programming the `1' state in A2RAM based on the impact ionization in the bridge, which can be assisted by the band-to-band tunneling effect in the top part of the silicon film. This new programming method reduces the programming voltage and writing time, making the A2RAM suitable as 1T-DRAM. Evidenced through TCAD simulation, the feasibility in matrix environment is also demonstrated.
Published: 2018
Full Text: View/download PDF

18. Direct examination of Si atoms spatial distribution and clustering in GaAs thin films with atom probe tomography

Author: R. Alcotte, Georges Beainy, Adeline Grenier, Jean-Paul Barnes, Mickael Martin, Thierry Baron, Franck Bassani, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), RENATECH programs, ANR-13-NANO-0001,MOSINAS,MOSFET à hétérostructure et film ultra mince d'InAs sur substrat silicium(2013), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: inorganic chemicals, Materials science, Silicon, chemistry.chemical_element, Flux, 02 engineering and technology, Atom probe, 01 natural sciences, Molecular physics, law.invention, law, Hall effect, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, Thin film, 010302 applied physics, [PHYS]Physics [physics], Mechanical Engineering, Metals and Alloys, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, Degradation (geology), Charge carrier, 0210 nano-technology
Abstract: International audience; In this contribution, we report on the Si atoms spatial distribution via Atom Probe Tomography (APT) in Si-doped GaAs thin films grown by MOCVD. As a result, we clearly identify the presence of Si precipitates occurring with increasing Si content in the layers. Using ToF-SIMS characterizations, we have been able to highlight the increasing evolution of the silicon content in the material as a function of silicon flux while that of the charge carriers studied by Hall effect decreases. Thus, this degradation of the electrical properties was directly linked to the observed clusters by APT.
Published: 2018
Full Text: View/download PDF

19. Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study

Author: Corentin Grillet, Alessandro Cresti, Marco G. Pala, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: Materials science, Phonon, 02 engineering and technology, nonequilibrium Green’s function (NEGF), 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum tunnelling, 010302 applied physics, Subthreshold conduction, business.industry, Scattering, III–V semiconductors, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, vertical tunnel field-effect transistor (TFET), Electronic, Optical and Magnetic Materials, Semiconductor, Logic gate, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; We present full-quantum simulations of a vertical III-V semiconductor tunnel field-effect transistor based on a broken-gap heterojunction, where the GaSb bottom layer and the InAs top layer are separated by a large-gap AlSb interlayer. Our approach based on the nonequilibrium Green's function formalism takes into account the scattering with acoustic and optical phonons. The impact of different design options, such as the length of the gate overlap, the gate extensions, and the barrier thickness, is comprehensively investigated. We show that, under specific conditions, steep subthreshold swings smaller than 30 mV/dec can be achieved with an ON/OFF current ratio larger than 107for a supply voltage of 0.3 V.
Published: 2018
Full Text: View/download PDF

20. Performance and Reliability of a Fully Integrated 3D Sequential Technology

Author: M. Vinet, M. Casse, F. Gaillard, Perrine Batude, Gerard Ghibaudo, A. Tsiara, C. Fenouillet-Beranger, K. Triantopoulos, Laurent Brunet, X. Garros, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nano 2017, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: 010302 applied physics, Computer science, Transistor, Process (computing), 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, PMOS logic, law.invention, Reliability engineering, Reliability (semiconductor), law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Inverter, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, NMOS logic
Abstract: session T7: Process and Material Technology; International audience; We investigate in detail, for the first time, both performance and reliability of a 3D sequential integration process. It is clearly demonstrated that the top level transistor can be successfully processed at 630°C with almost no impact on the performance and reliability of the bottom level. It is also highlighted that top level devices meet the P&NBTI reliability requirements. Finally an example of successful and robust 3D logic integration is proposed based on a 3D inverter combining a top-level PMOS with a bottom-level NMOS.
Published: 2018
Full Text: View/download PDF

21. Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Author: Sylvain David, Thierry Baron, Nicolas Bernier, Mickael Martin, Joyce Roque, Benedikt Haas, Jean-Luc Rouvière, Patrice Gergaud, François Bertin, Névine Rochat, Bassem Salem, J. Moeyaert, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 692527,H2020,H2020-ECSEL-2015-1-RIA-two-stage,3DAM(2016), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), Silicon, Band gap, business.industry, chemistry.chemical_element, Cathodoluminescence, 02 engineering and technology, Chemical vapor deposition, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry, 0103 physical sciences, Scanning transmission electron microscopy, Optoelectronics, 0210 nano-technology, business, Quantum well, Indium
Abstract: International audience; In0.3Ga0.7As quantum wells (QW) embedded in AlGaAs barriers and grown on oxidized patterned (001) silicon substrates by metalorganic chemical vapor deposition using the aspect ratio trapping method are studied. An appropriate method combining cathodoluminescence and high resolution scanning transmission electron microscopy characterization is performed to spatially correlate the optical and structural properties of the QW. A triple period (TP) ordering along the < 111 > direction induced by the temperature decrease during the growth to favor indium incorporation and aligned along the oxidized patterns is observed in the QW. Local ordering affects the band gap and contributes to the decrease of the optical emission efficiency. Using thermal annealing, we were able to remove the TP ordering and improve the QW optical emission by two orders of magnitude.
Published: 2018
Full Text: View/download PDF

22. Statistical analysis of CBRAM endurance

Author: Gilbert Sassine, G. Molas, Q. Raffay, D. Alfaro Robayo, E. Nowak, Cecile Nail, Mathieu Bernard, Gerard Ghibaudo, Jean-Francois Nodin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: 010302 applied physics, Resistive touchscreen, Bridging (networking), Materials science, Programmable metallization cell, 0103 physical sciences, Statistical analysis, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 01 natural sciences, Electrical conductor, Aluminum oxide, Resistive random-access memory
Abstract: session T6: RRAM; International audience; In this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al 2 O 3 based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al 2 O 3 thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer.
Published: 2018
Full Text: View/download PDF

23. Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

Author: Licinius Benea, Maryline Bawedin, Cécile Delacour, Sorin Cristoloveanu, T. Cerba, I. Ionica, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Thermodynamique et biophysique des petits systèmes (TPS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), AGIR-POLE CLEPS, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), and Thermodynamique et biophysique des petits systèmes (NEEL - TPS)
Subjects: 010302 applied physics, SOI, [PHYS]Physics [physics], Materials science, Condensed matter physics, Silicon, nanoindentation, chemistry.chemical_element, Ψ-MOSFET, 02 engineering and technology, Nanoindentation, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, metal-semiconductor contact, Pressure measurement, Electrical transport, chemistry, law, 0103 physical sciences, MOSFET, field-effect, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Drain current
Abstract: session poster; International audience; The effect of probe-induced nanoindentation on the electrical transport in Ψ-MOSFET is presented. Systematic measurements were performed in order to evaluate the dependence of the drain current on the probe pressure in different operating regimes. This enabled to investigate the existence of the metallic Si-II crystallographic form of silicon, which emerges at high pressures and shows a significant impact in the accumulation regime.
Published: 2018
Full Text: View/download PDF

24. Doping profile extraction in thin SOI films: application to A2RAM

Author: Maryline Bawedin, S. Cristoloveanu, F. Tcheme Wakam, Sebastien Martinie, J.-Ch. Barbe, Gerard Ghibaudo, Joris Lacord, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), Lacord, Joris, Laboratoires d'excellence - Minatec Novel Devices Scaling Laboratory - - MINOS Lab2010 - ANR-10-LABX-0055 - LABX - VALID, and Revolutionary embedded memory for internet of things devices and energy reduction - REMINDER - - H20202016-01-01 - 2018-12-31 - 687931 - VALID
Subjects: Materials science, Silicon, electrical characterization, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, 01 natural sciences, [SPI]Engineering Sciences [physics], Memory cell, 0103 physical sciences, Materials Chemistry, doping profile, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Doping profile, 010302 applied physics, SOI, business.industry, Extraction (chemistry), Experimental data, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, C-V characteristic, chemistry, Logic gate, Optoelectronics, 0210 nano-technology, business, A2RAM
Abstract: session 1: Fabrication and Process characterization; International audience; We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data.
Published: 2018
Full Text: View/download PDF

25. Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures

Author: Marco G. Pala, Alessandro Cresti, Jiang Cao, François Triozon, Jejune Park, Tyndall National Institute [Cork], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: Materials science, nonequilibrium G reen’s functions, Ocean Engineering, 02 engineering and technology, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Planar, quantum transport simulation, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Safety, Risk, Reliability and Quality, Quantum tunnelling, 010302 applied physics, business.industry, tunnel field-effect transistor, Transistor, 2 D materials, Heterojunction, 021001 nanoscience & nanotechnology, Tunnel field-effect transistor, Nanoelectronics, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Realization (systems)
Abstract: International audience; Thanks to their thinness, self-passivated surface and large variety, two-dimensional materials have attracted much interest for their possible application in nanoelectronics. In particular, semiconducting transition metal dichalcogenides and their van der Waals heterostructures are very promising for the realization of low-power tunnel fieldeffect transistors. By means of self-consistent quantum transport simulations, we explore the performances of two alternative architectures for the devices: the planar architecture and the vertical architecture. While for the former, which is based on a p-i-n junction, the tunneling occurs laterally within the same two-dimensional material layer, in the latter the tunneling occurs through the vertical heterostructure between two different materials, which are chosen to have a convenient band alignment. Our results enable a comparison of the performance of two architectures in the ideal case, and can serve as a first guide for the choice of the transistor design based on the desired application.
Published: 2018
Full Text: View/download PDF

26. Parasitic bipolar effect in ultra-thin FD SOI MOSFETs

Author: Sorin Cristoloveanu, Irina Ionica, Maryline Bawedin, Fanyu Liu, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: CT208,Catrene, European Project: 325633,EC:FP7:SP1-JTI,ENIAC-2012-2,PLACES2BE(2012), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, business.industry, Heterostructure-emitter bipolar transistor, Electrical engineering, Silicon on insulator, Ultra-thin FD SOI, Parasitic bipolar transistor, Condensed Matter Physics, Parasitic bipolar effect, Electronic, Optical and Magnetic Materials, Band-to-band tunneling, Materials Chemistry, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Current (fluid), business, Gate current, Quantum tunnelling
Abstract: International audience; The parasitic bipolar effect is investigated in fully-depleted silicon-on-insulator (FD SOI) n-type MOSFETs with ultra-thin films (5–10 nm). Our measurements show that at low drain bias the drain leakage current is governed by the gate current. Beyond VD > 1.0 V, leakage current amplification is observed in short-channel 10-nm thick devices. With film thickness shrinking, the current amplification is suppressed. We explain this amplification by the turn-on of the lateral parasitic bipolar transistor. TCAD simulations confirm that the parasitic bipolar is activated due to holes generated by band-to-band tunneling at the drain side and accumulated in the floating body. An effective method for the extraction of bipolar gain is proposed based on the comparison of leakage current in short- and long-channel devices. The experimental method is validated through simulations.
Published: 2015
Full Text: View/download PDF

27. Table-top deterministic and collective colloidal assembly using videoprojector lithography

Author: Marc Zelsmann, Thibault Honegger, Emmanuel Picard, Emmanuel Hadji, Julien Cordeiro, David Peyrade, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Rapid prototyping, Materials science, Fabrication, General Physics and Astronomy, Nanoparticle, Nanotechnology, Maskless Lithography, Colloid, Manipulation, Device, Microelectronics, Lithography, [PHYS]Physics [physics], business.industry, Colloidal Assembly, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Surfaces, Coatings and Films, Surface, Videoprojector, Nanoparticles, Table (database), Capillary Force Assembly, business, Maskless lithography
Abstract: International audience; In the field of micro- and nanotechnology, most lithography and fabrication tools coming from the microelectronic industry are expensive, time-consuming and may need some masks that have to be subcontracted. Such approach is not suitable for other fields that require rapid prototyping such as chemistry, life science or energy and may hinder research creativity. In this work, we present two table-top equipments dedicated to the fabrication of deterministic colloidal particles assemblies onto micro-structured substrates. We show that, with a limited modification of the optics of a standard videoprojector, it is possible to quickly obtain substrates with thousands of micrometric features. Then, we combine these substrates with thermodynamic colloidal assembly and generate arrays of particles without defects. This work opens the way to a simple and table-top fabrication of devices based on colloidal particles. (C) 2015 Elsevier B.V. All rights reserved.
Published: 2015
Full Text: View/download PDF

28. Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Author: Y. Bogumilowicz, T. Cerba, Hervé Boutry, Eric Tournié, Thierry Baron, Patrice Gergaud, Jean-Luc Rouvière, R. Alcotte, M. Bawedin, Franck Bassani, Laurent Cerutti, Mickael Martin, J. Moeyaert, Jean-Baptiste Rodriguez, Sylvain David, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Subjects: Phase boundary, Materials science, Silicon substrate, 02 engineering and technology, Chemical vapor deposition, Two-step growth, 01 natural sciences, Metal organic chemical vapor deposition, Metal, Surface roughness, Si substrate, 0103 physical sciences, Materials Chemistry, 010302 applied physics, [PHYS]Physics [physics], Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, X-ray diffraction, Crystallography, Chemical engineering, visual_art, visual_art.visual_art_medium, 0210 nano-technology, Layer (electronics), Gallium antimonide, Rocking-curve
Abstract: International audience; Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm) have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by metal organic chemical vapor deposition using a two-step growth process. By adjusting the growth temperature and the thickness of the nucleation layer, antiphase boundary free GaSb layers as thin as 250 nm are obtained. The 12% lattice mismatch between GaSb and Si is accommodated by both the formation of threading dislocations and a periodic array of 90° misfit dislocations at the interface. A GaSb layer inserted between AlSb barriers has been grown on an optimized GaSb/(001)-Si buffer layer and exhibits room temperature photoluminescence.
Published: 2018
Full Text: View/download PDF

29. High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

Author: J. Micout, M. Casse, J.-P. Colinge, L. Desvoivres, Vincent Delaye, C. Fenouillet-Beranger, S. Barraud, X. Garros, Perrine Batude, J.M. Hartmann, R. Bortolin, V. Mazzocchi, Frédéric Mazen, G. Romano, B. Mathieu, N. Rambal, V. Balan, Zineb Saghi, F. Allain, M.-P. Samson, P. Besombes, C. Comboroure, M. Vinet, Quentin Rafhay, Joris Lacord, Claude Tabone, Alain Toffoli, Gerard Ghibaudo, C. Vizioz, Benoit Sklenard, V. Lapras, L. Lachal, Laurent Brunet, Virginie Loup, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010)
Subjects: Materials science, Fabrication, business.industry, 020208 electrical & electronic engineering, Doping, Recrystallization (metallurgy), 02 engineering and technology, Epitaxy, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, 020201 artificial intelligence & image processing, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract: session 32: Process and Manufacturing Technology (32.2); International audience; For the first time, a low temperature (LT) FinFET process is demonstrated, using Solid Phase Epitaxy Regrowth (SPER), gate last integration and Self Aligned Contact (SAC). The LT devices exhibit performances close to those of the High Temperature Process Of Reference (HT POR). Several techniques of SPER doping are investigated and an innovative Double SPER (DSPER) process using two amorphization/recrystallization steps, is demonstrated. This DSPER process has the advantage of doping the bulk of the S/D junctions. This work opens the door to the fabrication of high-performance LT FinFETs for 3D sequential integration.
Published: 2017
Full Text: View/download PDF

30. Towards 500°C SPER activated devices for 3D sequential integration

Author: Maud Vinet, Vincent Delaye, Zineb Saghi, Perrine Batude, Benoit Sklenard, J.-P. Colinge, L. Pasini, V. Mazzocchi, Claire Fenouillet-Beranger, R. Berthelon, Laurent Brunet, J. Micout, Joris Lacord, Frédéric Mazen, B. Mathieu, Sylvain Joblot, Quentin Rafhay, Gerard Ghibaudo, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: Materials science, Dopant, business.industry, Optoelectronics, Recrystallization (metallurgy), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Dopant Activation, business, Epitaxy
Abstract: session: Monolithic 3D 3; International audience; This work investigates the possibility to reduce the Solid Phase Epitaxy Regrowth (SPER) temperature for dopant activation needed in 3D sequential integration. The electrical results obtained on 28nm FDSOI devices show that 500°C SPER can yield similar performance to that of 600°C SPER and 1050°C spike anneal. This paper highlights the advantages of using a -oriented channel and tilted implantation to successfully reduce the SPER thermal budget. It also confirms that the channel can be used as a seed for the recrystallization. The analysis takes into account the SPER rate dependence on temperature, crystalline orientation, dopant type and dopant concentration.
Published: 2017
Full Text: View/download PDF

31. Reliability analysis on low temperature gate stack process steps for 3D sequential integration

Author: C-M. V. Lu, F. Martin, Gerard Ghibaudo, R. Gassilloud, Perrine Batude, G. Reimbold, O. Faynot, C. Fenouillet-Beranger, X. Garros, A. Tsiara, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), nano 2017, and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: 010302 applied physics, reliability, Negative-bias temperature instability, Materials science, Annealing (metallurgy), business.industry, gate stack, Nanowire, Gate stack, Equivalent oxide thickness, low temperature, Dopant Activation, 01 natural sciences, nanowires, 3D sequential integration, 0103 physical sciences, Optoelectronics, process, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Forming gas, business, Scaling
Abstract: session: Monolithic 3D 3; International audience; In this study we investigate the effect of some of the steps during a low temperature gate stack process flow, necessary for 3D sequential integration. These are: the nitridation of the high-k layer, the post nitridation annealing temperature and finally, the back end forming gas. Using Time Dependent Defect Spectroscopy, we could evaluate the impact of pre-existing traps on the quality of the gate stack (t 0 reliability) which shows no major differences between the splits, since they all have a low temperature dopant activation process. However, by applying Negative Bias Temperature Instability measurements, we observe that with the split of N 2 /H 2 nitridation, we have the best compromise of a small Equivalent Oxide Thickness and a low degradation. At the same time we see no difference at the stress impact between the two Post Nitridation Anneal temperatures. In that way we are able to move to lower temperatures. Finally, using the Deuterium as a back end forming gas we can have a set of guidelines, for some of the major process steps, to achieve high performance and low degradation, necessary for future scaling.
Published: 2017
Full Text: View/download PDF

32. Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices

Author: L. Pasini, Jean Coignus, Perrine Batude, J. Micout, N. Rambal, R. Gassilloud, Claire Fenouillet-Beranger, Maud Vinet, C.-M. V. Lu, Mikael Casse, Xavier Garros, Quentin Rafhay, G. Romano, Gerard Ghibaudo, Laurent Brunet, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics, This work is partly funded by the French Public Authorities through NANO 2017 program and EQUIPEX FDSOI11, ST-LETI Alliance program and by LabEx Minos ANR-10-LABX-55-01., IEEE, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010)
Subjects: 0209 industrial biotechnology, Work (thermodynamics), Materials science, business.industry, 020206 networking & telecommunications, 02 engineering and technology, Temperature measurement, Length measurement, 020901 industrial engineering & automation, Logic gate, MOSFET, Thermal, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optoelectronics, Degradation (geology), Extraction (military), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract: session B2L-G: Advanced CMOS Characterization and Reliability; International audience; — 3D sequential integration requires top FETs processing with a low thermal budget (500°C). The analysis of the origin of the performance difference between Low Temperature (LT) MOSFET and high temperature standard process must take into account a potential EOT modification for short gate lengths. In this work, the difficulty of precise EOT extraction for scaled devices is observed by CV measurements and an alternative methodology using IV measurements is proposed. This methodology has been applied to an extension first integration, and the extraction accuracy is high enough to conclude to an EOT regrowth for the low temperature nFETs only. Thus, the origin of performance degradation between LT and HT, previously attributed to larger access resistance, highlights also a detrimental role of gate stack instability. The origin of this variation is attributed to oxygen ingress, through the thin extension first liner which should be suppressed by minor process optimizations.
Published: 2017
Full Text: View/download PDF

33. Optimization guidelines of A2RAM cell performance through TCAD simulations

Author: F. Tcheme Wakam, J. Lacord, S. Martinie, J.-Ch. Barbe, M. Bawedin, S. Cristoloveanu, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016)
Subjects: 010302 applied physics, Engineering, Hardware_MEMORYSTRUCTURES, TCAD, electrical characterization, business.industry, Potential candidate, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Reliability engineering, 1T-DRAM, DRAM, 0103 physical sciences, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Technology CAD, optimization, Dram, A2RAM
Abstract: session: Future Devices (12.4); International audience; A2RAM belongs to the 1T-DRAM family and is a potential candidate to replace the traditional 1T/1C- DRAM [1-2]. In this paper, we propose a TCAD simulation [3] methodology to assess A2RAM performance, validated through experimental measurement. It is then used to provide further insight in A2RAM and optimization guidelines.
Published: 2017
Full Text: View/download PDF

34. Comparison of RTN and TDDS methods for trap extraction in trigate nanowires

Author: A. Tsiara, X. Garros, A. Vernhet, S. Barraud, O. Faynot, G. Ghibaudo, G. Reimbold, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), nano 2017, and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: 010302 applied physics, Random Telegraph Noise-RTN, Materials science, Noise measurement, Nanowire, Dielectric, Trap (plumbing), 01 natural sciences, Molecular physics, Noise (electronics), Stress (mechanics), nanowires, 0103 physical sciences, MOSFET, Electronic engineering, traps, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Spectroscopy, Time Dependent Defect Spectroscopy-TDDS
Abstract: session 3E: Reliability Testing; International audience; In this paper we present a direct comparison of the two basic techniques for trap extraction, the Random Telegraph Noise (RTN) and the Time Dependent Defect Spectroscopy (TDDS). By using the method of histograms, extracted from the measured drain current transients, we divided the recorded defects in three different categories. Results show that we night be able to detect traps deeper in the oxide and, also, near the dielectric/channel interface. As we scale down, we found a better correlation between the two methods, while the after stress results show a merging of the slopes compared to the bimodal distribution that appeared at the beginning.
Published: 2017
Full Text: View/download PDF

35. Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

Author: Michel Haond, C. Leroux, G. Reimbold, B. Mohamad, Gerard Ghibaudo, Denis Rideau, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)
Subjects: Buried oxide thickness, Materials science, Quantum simulator, Equivalent oxide thickness, 02 engineering and technology, Substrate (electronics), Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Gate oxide, 0103 physical sciences, Materials Chemistry, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Work function, Electrical and Electronic Engineering, Channel thickness, Effective work function, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Fully depleted silicon on insulator, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, Node (circuits), Equivalent oxide thickne, 0210 nano-technology, AND gate
Abstract: International audience; Effective work function and equivalent oxide thickness are fundamental parameters for technology optimization. In this work, a comprehensive study is done on a large set of FDSOI devices. The extraction of the gate stack parameters is carried out by fitting experimental CV characteristics to quantum simulation, based on self-consistent solution of one dimensional Poisson and Schrodinger equations. A reliable methodology for gate stack parameters is proposed and validated. This study identifies the process modules that impact directly the effective work function from those that only affect the device threshold voltage, due to the device architecture. Moreover, the relative impacts of various process modules on channel thickness and gate oxide thickness are evidenced.
Published: 2017
Full Text: View/download PDF

36. Impact of low thermal processes on reliability of high-k/metal gate stacks

Author: Artemisia Tsiara, Xavier Garros, C.-M. V. Lu, Claire Fenouillet-Beranger, Gerard Ghibaudo, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nano 2017, and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: Materials science, Silicon, chemistry.chemical_element, Time-dependent gate oxide breakdown, Nanotechnology, 01 natural sciences, Noise (electronics), law.invention, Gate oxide, law, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Metal gate, Instrumentation, High-κ dielectric, 010302 applied physics, business.industry, Process Chemistry and Technology, Transistor, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Field-effect transistor, business
Abstract: International audience; The time dependent defect spectroscopy method has been used to analyze the impact of low thermal budget (TB) processes on the quality of high-k/metal gate stacks. For n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), it is shown that reducing the TB of the process does not seem to degrade the t0-reliability of the gate oxide. The density of pre-existing high-k defects responsible for random telegraph noise (RTN) has a small increase for the low temperature (LT) process, and, at the same time, the location of the traps, inside the oxide, remains the same. On the other hand, for p-type MOSFETs, the gate stack reliability is affected by the thermal budget, and there is a large increase in the density of RTN defects for the LT process compared to the high temperature reference. Finally, it is observed that, for low thermal budget, the nature of the traps changes and there is a modification of the depth of the traps within the interfacial layer which are, now, closer to the Si interface. This study gives guidelines to achieve good trade off performance/reliability for a 3D CoolCube™ integration process.
Published: 2017
Full Text: View/download PDF

37. Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

Author: N. Perrissin, Jyotirmoy Chatterjee, Stéphane Auffret, Ricardo C. Sousa, Clarisse Ducruet, Bernard Dieny, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CROCUS Technology, ANR-13-NANO-0010,EXCALYB,Cellules MRAM sub-20nm et intégration CMOS de circuits hybrides(2013), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 669204,H2020,ERC-2014-ADG,MAGICAL(2015)
Subjects: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Annealing (metallurgy), Perpendicular magnetic anisotropy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Tunnel magnetoresistance, Nuclear magnetic resonance, 0103 physical sciences, Electrode, Thermal, Perpendicular, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Antiferromagnetism, 0210 nano-technology, Anisotropy
Abstract: International audience; The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boosts up the annealing stability and increases the effective perpendicular anisotropy by 30% compared to the Ta cap. Correspondingly, an increase in the FeCoB critical thickness characterizing the transition from perpendicular to in-plane anisotropy was observed. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode highly robust against annealing up to 570 °C. The stiffening of the overall stack resulting from the W insertion due to its very high melting temperature seems to be the key mechanism behind the extremely high thermal robustness. The Gilbert damping constant of FeCoB with the W/Ta cap was found to be lower when compared with the Ta cap and stable with annealing. The evolution of the magnetic properties of bottom pinned perpendicular magnetic tunnel junctions (p-MTJ) stack with the W2/Ta1 nm cap layer shows back-end-of-line compatibility with increasing tunnel magnetoresistance up to the annealing temperature of 425 °C. The pMTJ thermal budget is limited by the synthetic antiferromagnetic hard layer which is stable up to 425 °C annealing temperature while the storage layer is stable up to 455 °C.
Published: 2017
Full Text: View/download PDF

38. Reaction of Ni film with In0.53Ga0.47As: Phase formation and texture

Author: Tra Nguyen-Thanh, Nathalie Boudet, Patrice Gergaud, Laetitia Rapenne, Philippe Rodriguez, S. Zhiou, Nils Blanc, Fabrice Nemouchi, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CRG et Grands Instruments (CRG ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), ANR-11-EQPX-0010,CRGF,Lignes synchrotron françaises à l'ESRF(2011), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), ANR-10-LABX-0044,CEMAM,Center of Excellence in Multifunctional Architectured Materials(2010), CRG & Grands instruments (NEEL - CRG), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Materials science, Annealing (metallurgy), Intermetallic, General Physics and Astronomy, 02 engineering and technology, Crystal structure, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Crystallography, Reciprocal lattice, Lattice constant, 0103 physical sciences, X-ray crystallography, Scanning transmission electron microscopy, 0210 nano-technology, Stoichiometry
Abstract: International audience; The solid-state reaction between Ni and In In$_{0.53}$Ga$_{0.47}$As on an InP substrate was studied by X-ray diffraction (XRD) and scanning transmission electron microscopy-energy-dispersive X-ray spec-troscopy techniques. Due to the monocrystalline structural aspect of the so-formed intermetallic, it was necessary to measure by XRD a full 3D reciprocal space mapping in order to have a complete overlook over the crystalline structure and texture of the intermetallic. The formation of the inter-metallic was studied upon several different Rapid Thermal Annealings on the as-deposited samples. Pole figures analysis shows that the intermetallic features a hexagonal structure (P6$_3$$/mmc$) with an NiAs-type (B8) structure. Although only one hexagonal structure is highlighted, the intermetallic exhibits two different domains characterized by different azimuthal orientations, axiotaxial relationship, and lattice parameters. The intermetallic phases seem to present a rather wide range of stoichiometry according to annealing temperature. The texture, structure, and stoichiometry of the intermetallic are discussed along with the evolution of lattice parameters of the Ni-InGaAs phase.
Published: 2016
Full Text: View/download PDF

39. Investigation of Cycle-to-Cycle Variability in HfO 2 -Based OxRAM

Author: O. Cueto, Gerard Ghibaudo, Luca Perniola, Gabriel Molas, Daniele Garbin, Carlo Cagli, G. Piccolboni, Boubacar Traore, Elisa Vianello, Barbara De Salvo, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 621217,EC:FP7:SP1-JTI,ENIAC-2013-2,PANACHE(2014)
Subjects: 010302 applied physics, Materials science, Condensed matter physics, Oxide, 02 engineering and technology, Approx, 021001 nanoscience & nanotechnology, Hafnium compounds, 01 natural sciences, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Correlation, High resistance, chemistry.chemical_compound, chemistry, OxRAM, 0103 physical sciences, Conductive filament, Electronic engineering, Electrical and Electronic Engineering, Variability, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Low resistance, HfO2
Abstract: International audience; This letter studies the intrinsic variability in oxide-based resistive RAM technology, highlighting the presence of a short range (≈40) correlation of resistances among cycles (for both low resistance state and high resistance state). Experimental results demonstrate the existence of a resistance correlation, and an analytical model is proposed in order to explain the findings. The presence of the correlation seems to indicate that the conductive filament, which is believed to be the basis of resistive RAM behavior, keeps for a limited number of cycling operations a memory of its morphology. The extension of this correlation depends on the programming conditions.
Published: 2016
Full Text: View/download PDF

40. Sub-10 nm Silicon Nanopillar Fabrication Using Fast and Brushless Thermal Assembly of PS- b -PDMS Diblock Copolymer

Author: Javier Arias-Zapata, Sandrine Arnaud, Olivier Marconot, Jérôme Garnier, Denis Buttard, Sophie Böhme, Cécile Girardot, Marc Zelsmann, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: [PHYS]Physics [physics], Plasma etching, Fabrication, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry, Polymer chemistry, Thermal, Copolymer, Grazing-incidence small-angle scattering, General Materials Science, Composite material, 0210 nano-technology, Wetting layer, Nanopillar
Abstract: International audience; A new approach to obtaining spherical nanodomains using polystyrene-block-polydimethylsiloxane (PS-b-PDMS) is proposed. To reduce drastically the process time, we blended a copolymer with cylindrical morphology with a PS homopolymer. Adding PS homopolymer into a low-molar-mass cylindrical morphology PS-b-PDMS system drives it toward a spherical morphology. Besides, by controlling the as-spun state, spherical PDMS nanodomains could be kept and thermally arranged. This PS-homopolymer addition allows not only an efficient, purely thermal arrangement process of spheres but also the ability to work directly on nontreated silicon substrates. Indeed, as shown by STEM measurements, no PS brush surface treatment was necessary in our study to avoid a PDMS wetting layer at the interface with the Si substrate. Our approach was compared to a sphere-forming diblock copolymer, which needs a longer thermal annealing. Furthermore, GISAXS measurements provided complete information on PDMS sphere features. Excellent long-range order spherical microdomains were therefore produced on flat surfaces and inside graphoepitaxy trenches with a period of 21 nm, as were in-plane spheres with a diameter of 8 nm with a 15 min thermal annealing. Finally, direct plasma-etching transfer into the silicon substrate was demonstrated, and 20 nm high silicon nanopillars were obtained, which are very promising results for various nanopatterning applications.
Published: 2016
Full Text: View/download PDF

41. Study of the formation and degradation of intermetallics formed by solid-state reaction of Ni on InGaAs

Author: Zhiou, Seifeddine, Nguyen, Thanh Tra, Rodriguez, Philippe, Nemouchi, Fabrice, Gergaud, Patrice, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CRG & Grands instruments (NEEL - CRG), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), ANR-11-EQPX-0010,CRGF,Lignes synchrotron françaises à l'ESRF(2011), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), Rodriguez, Philippe, Laboratoires d'excellence - Minatec Novel Devices Scaling Laboratory - - MINOS Lab2010 - ANR-10-LABX-0055 - LABX - VALID, Equipements d'excellence - Lignes synchrotron françaises à l'ESRF - - CRGF2011 - ANR-11-EQPX-0010 - EQPX - VALID, Equipements d'excellence - Plateforme FDSOI pour le node 11nm - - FDSOI112010 - ANR-10-EQPX-0030 - EQPX - VALID, and CRG et Grands Instruments (CRG )
Subjects: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2016

42. Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Author: C. Sabbione, Nicolas Bernier, Philippe Kowalczyk, Françoise Hippert, Walter Batista-Pessoa, Cristian Mocuta, Pierre Noé, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G ), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 621217,EC:FP7:SP1-JTI,ENIAC-2013-2,PANACHE(2014), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Subjects: Materials science, Superlattice, Stacking, chalcogenide superlattices, 02 engineering and technology, 01 natural sciences, Pulsed laser deposition, Biomaterials, symbols.namesake, 0103 physical sciences, General Materials Science, physical vapor deposition, [PHYS]Physics [physics], 010302 applied physics, interfacial phase-change memory, General Chemistry, GeTe, Sputter deposition, 021001 nanoscience & nanotechnology, Phase-change memory, Chemical physics, Physical vapor deposition, symbols, van der Waals force, 0210 nano-technology, Sb2Te3, Biotechnology, Molecular beam epitaxy
Abstract: International audience; Van der Waals layered GeTe/Sb2Te3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb2Te3 SLs are made by periodically stacking ultrathin GeTe and Sb2Te3 crystalline layers. The mechanism of the resistance change in iPCM devices is still highly debated. Recent experimental studies on SLs grown by molecular beam epitaxy or pulsed laser deposition indicate that the local structure does not correspond to any of the previously proposed structural models. Here, a new insight is given into the complex structure of prototypical GeTe/Sb2Te3 SLs deposited by magnetron sputtering, which is the used industrial technique for SL growth in iPCM devices. X-ray diffraction analysis shows that the structural quality of the SL depends critically on its stoichiometry. Moreover, high-angle annular dark-field-scanning transmission electron microscopy analysis of the local atomic order in a perfectly stoichiometric SL reveals the absence of GeTe layers, and that Ge atoms intermix with Sb atoms in, for instance, Ge2Sb2Te5 blocks. This result shows that an alternative structural model is required to explain the origin of the electrical contrast and the nature of the resistive switching mechanism observed in iPCM devices.
Published: 2018
Full Text: View/download PDF

43. Robust EOT and effective work function extraction for 14 nm node FDSOI technology

Author: Michel Haond, B. Mohamad, Denis Rideau, G. Reimbold, Gerard Ghibaudo, Charles Leroux, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 325633,EC:FP7:SP1-JTI,ENIAC-2012-2,PLACES2BE(2012)
Subjects: 010302 applied physics, Work (thermodynamics), Materials science, Quantum simulator, Equivalent oxide thickness, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, Gate oxide, fully depleted silcon on insulator, 0103 physical sciences, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Work function, Node (circuits), buried oxide thickness, equivalent oxide thickness, Effective work function, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, AND gate, channel thickness
Abstract: session 10: end of Scaling and Beyond CMOS; International audience; Effective work function and equivalent oxide thickness are fundamental parameters for technology optimization. In this work, a comprehensive study is done on a large set of FDSOI devices. The extraction of the gate stack parameters is carried out by fitting experimental CV characteristics to quantum simulation, based on self-consistent solution of one dimensional Poisson and Schrodinger equations. A reliable methodology for gate stack parameters is proposed and validated. This study identifies the process modules that impact directly the effective work function from those that only affect the device threshold voltage, due to the device architecture. Moreover, the relative impacts of various process modules on channel thickness and gate oxide thickness are evidenced.
Published: 2016
Full Text: View/download PDF

44. Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm

Author: P. Nguyen, S. Barraud, Nicolas Bernier, M. Vinet, Sebastien Martinie, Sorin Cristoloveanu, C. Le Royer, Louis Hutin, F. Glowacki, F. Allain, A. Villalon, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 257267,ICT,FP7-ICT-2009-5,STEEPER(2010), and European Project: 323841,EC:FP7:ICT,FP7-ICT-2013-C,SISPIN(2013)
Subjects: Fabrication, Materials science, Tunnel FET, Band gap, SiGe, Gate length, Silicon on insulator, Nanotechnology, 02 engineering and technology, 01 natural sciences, SGOI, TFET, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, ION, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Metal gate, Saturation (magnetic), Quantum tunnelling, 010302 applied physics, SOI, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, Optoelectronics, 0210 nano-technology, business
Abstract: We report the fabrication and the characterization of tunnel FETs fabricated on SiGe-On-Insulator with a High-κ Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on I D ( V G ) characteristics is presented and analyzed: compressive Si 0.75 Ge 0.25 enables to increase by a factor of 25 the saturation currents, even at small gate length ( L G = 50 nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).
Published: 2016
Full Text: View/download PDF

45. Toward the III-V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Author: R. Alcotte, T. Baron, Y. Bogumilowicz, Pascal Pochet, Franck Bassani, R. Cipro, J. Moeyaert, J. B. Pin, Sylvain David, Errol Antonio C. Sanchez, X.Y. Bao, M. Martin, Damien Caliste, T. Cerba, Z. Ye, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Subjects: Silicon, Materials science, Physics and Astronomy (miscellaneous), Hydrogen, Annealing (metallurgy), FOS: Physical sciences, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Vacancy defect, 0103 physical sciences, Surface-Morphology, Metalorganic vapour phase epitaxy, Total pressure, 010302 applied physics, [PHYS]Physics [physics], Condensed Matter - Materials Science, Antiphase Boundaries, business.industry, GaAs, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, CMOS, chemistry, Optoelectronics, Density functional theory, 0210 nano-technology, business
Abstract: The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (APBs) at the III-V/Si(001) interface. Density functional theory (DFT) has been used to demonstrate the existence of a double-layer steps on nominal Si(001) which is formed during annealing under proper hydrogen chemical potential. This phenomenon could be explained by the formation of dimer vacancy lines which could be responsible for the preferential and selective etching of one type of step leading to the double step surface creation. To check this hypothesis, different experiments have been carried in an industrial 300 mm MOCVD where the total pressure during the anneal step of Si(001) surface has been varied. Under optimized conditions, an APBs-free GaAs layer was grown on a nominal Si(001) surface paving the way for III-V integration on silicon industrial platform., Comment: 9 pages, 3 figures
Published: 2016
Full Text: View/download PDF

46. VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study

Author: Marco Pala, C. Grillet, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), ANR-13-NANO-0001,MOSINAS,MOSFET à hétérostructure et film ultra mince d'InAs sur substrat silicium(2013), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: 010302 applied physics, Materials science, Phonon scattering, Condensed matter physics, Subthreshold conduction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ion, symbols.namesake, Formalism (philosophy of mathematics), 0103 physical sciences, symbols, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Hamiltonian (quantum mechanics), Scaling, Quantum, Quantum tunnelling
Abstract: session 8: Modeling2; International audience; We performed 2D full-quantum simulations of ultrathin InAs nMOSFETs and address a supply-voltage scaling investigation to evaluate the performance of such devices at different channel lengths. By adopting an 8×8 k · p Hamiltonian within the non-equilibrium Green's functions formalism in the presence of phonon scattering, we take into account non-parabolicity, band-to-band tunneling and strain effects, we find that at VDS> 0.6V the transfer characteristics in the off-state are strongly deteriorated by hole-induced barrier lowering, while at VDS= 0.5V, the simulated device reaches on-currents (Ion) close to 500A/m, along with subthreshold swings (SS) as low as 65mV/dec.
Published: 2016
Full Text: View/download PDF

47. Resistive memory variability: A simplified trap-assisted tunneling model

Author: Mourad Azzaz, Elisa Vianello, Luca Perniola, Quentin Rafhay, Daniele Garbin, Gerard Ghibaudo, Philippe Candelier, B. DeSalvo, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), STMicroelectronics [Grenoble] (ST-GRENOBLE), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 621217,EC:FP7:SP1-JTI,ENIAC-2013-2,PANACHE(2014), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), and ANR-10-LABX-0055/10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: Work (thermodynamics), Engineering, 02 engineering and technology, 01 natural sciences, RRAM, Trap (computing), OxRAM, 0103 physical sciences, Materials Chemistry, Electronic engineering, Statistical physics, Tunneling current, Electrical and Electronic Engineering, Variability, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum tunnelling, 010302 applied physics, Resistive touchscreen, Trap assisted tunneling, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Resistive random-access memory, 0210 nano-technology, business
Abstract: International audience; This work presents a model that allows to explain the resistance variability of OxRAM devices, both in high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution. The model is able to capture both cycle-to-cycle (temporal) and device-to-device (spatial) variability.
Published: 2016
Full Text: View/download PDF

48. Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

Author: Vincent Delaye, Marc Bocquet, B. De Salvo, T. Magis, G. Ghibaudo, Damien Deleruyelle, C. Pellissier, G. Piccolboni, Marc Gely, C. Carabasse, C. Cagli, Daniele Garbin, E. Vianello, Jean-Michel Portal, L. Perniola, G. Molas, R. Coquand, O. Cueto, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 621217,EC:FP7:SP1-JTI,ENIAC-2013-2,PANACHE(2014), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Engineering, Artificial neural network, business.industry, Electrical engineering, NAND gate, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Resistive random-access memory, Planar, Neuromorphic engineering, 0103 physical sciences, Computer data storage, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Neuromorphic circuits, Electronic circuit
Abstract: International audience; Combining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1]. 3D RRAM based neural networks were also proposed to emulate the potentiation and depression of a synapse [2], but more complex circuits were not discussed. In previous works [3-4], various RRAM based neuromorphic circuits were proposed and investigated, using planar devices.
Published: 2015
Full Text: View/download PDF

49. Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

Author: B. Sagnes, Carlos Navarro, Francois Andrieu, Frédéric Martinez, Sorin Cristoloveanu, Maryline Bawedin, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-JS03-0001,AMNESIA,Dispositifs Mémoires Nanométriques Innovants pour Applications Ultra Basse Consommation(2011), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015), European Project: 325633,EC:FP7:SP1-JTI,ENIAC-2012-2,PLACES2BE(2012), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, Transistor, General Physics and Astronomy, chemistry.chemical_element, Silicon on insulator, Nanotechnology, 02 engineering and technology, Semiconductor device, 021001 nanoscience & nanotechnology, 01 natural sciences, Semimetal, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, law, 0103 physical sciences, MOSFET, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Communication channel
Abstract: International audience; Supercoupling effect prevents the simultaneous formation of inversion and accumulation channels at the two interfaces of ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Our work highlights that short-channel effects enhance supercoupling and turn it into a two-dimensional mechanism. The lateral influence of source and drain terminals is evidenced with experimental data and examined by 2D numerical simulations which reveal the roles of gate length and drain bias. The critical Si-film thickness, below which supercoupling arises, is significantly increased in short-channel transistors. The impact of back-gate and drain bias, BOX thickness, and quantum effects is documented and practical applications are discussed.
Published: 2015
Full Text: View/download PDF

50. Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Author: Carlo Cagli, Gilles Reimbold, A. Persico, Elisa Vianello, Gabriel Molas, Quentin Rafhay, Gerard Ghibaudo, Clement Nguyen, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), ANR-10-LABX-0055/10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Subjects: Engineering, 02 engineering and technology, 01 natural sciences, Transient voltage suppressor, RRAM, law.invention, Switching time, Parasitic capacitance, Memory cell, law, 0103 physical sciences, Electronic engineering, switching time, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, HfO2, 010302 applied physics, endurance, business.industry, Transistor, Electrical engineering, pulsed measurements, Nanosecond, 021001 nanoscience & nanotechnology, Resistive random-access memory, Resistor, 0210 nano-technology, business
Abstract: session 2: Non-Volatile Memories; International audience; In this paper we present a high speed dynamical characterization of a HfO2-based Resistive Random Access Memory (RRAM) device. Thanks to a dedicated integrated device, in one Transistor one Resistor (1T1R) configuration, featuring an electrical pad between the selector and the memory cell, we provide very accurate programming measurements at the nanosecond range. The low parasitic capacitance (4pF) allows to detect and recording the transient voltage across the memory cell with a 400 ps resolution. The set voltage as a function of programming speed can thus be measured over a broad time range (10 ns-1 ms). The impact of the programming speed on the cell endurance is assessed. The effect of temperature on programming speed is also shown. It is demonstrated that the tested sample achieves SET with 1.3 V/15 ns pulse, and 1Mcycle is guaranteed with these programming conditions.
Published: 2015
Full Text: View/download PDF

Catalog

Books, media, physical & digital resources

See catalog results

Searchworks

Select search scope, currently: Articles Catalog books, media & more in Jio Institute collections Articles journal articles & other e-resources

Search

Search Constraints

Refine your results

Search Limiters

Topic

Publication Year Range

Language

Journal

Database

Publisher

69 results on '"ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)"'

Search Results

Catalog

Select search scope, currently: Articles

Catalog

books, media & more in Jio Institute collections

Articles

journal articles & other e-resources