1,175 results on '"A. A. Allerman"'
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2. Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield☆
3. First principles study of hBN-AlN short-period superlattice heterostructures
4. Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
5. Tunnel-injected sub-260 nm ultraviolet light emitting diodes
6. Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
7. Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air
8. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
9. Origins of epitaxial macro-terraces and macro-steps on GaN substrates.
10. Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
11. Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
12. Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs
13. Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
14. Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage
15. Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
16. Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition.
17. X-ray topography characterization of gallium nitride substrates for power device development
18. AlGaN High Electron Mobility Transistor for High Temperature Logic
19. Low Voltage Drop AlGaN UV-A Laser Structures with Transparent Tunnel Junctions and Optimized Quantum Wells
20. High-Al-content heterostructures and devices
21. Multi-active region AlGaN UV LEDs with transparent tunnel junctions
22. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors
23. High Al-content AlGaN-based HEMTs
24. High-Brightness Ultraviolet Lasers for Leap-Ahead National Security Applications
25. Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride
26. Strong coupling in the sub-wavelength limit using metamaterial nanocavities
27. Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors
28. Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
29. Enhancement of Rabi Splitting in a Microcavity with an Embedded Superlattice
30. Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices
31. Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy
32. III-Nitride ultra-wide-bandgap electronic devices
33. Origins of epitaxial macro-terraces and macro-steps on GaN substrates
34. Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
35. Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
36. AlGaN High Electron Mobility Transistor for High-Temperature Logic
37. Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate.
38. (Invited) Electron Channeling Contrast Imaging for Rapid Characterization of Compound Semiconductors
39. (Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains
40. Electron Channeling Contrast Imaging (ECCI) for Rapid Characterization of Compound Semiconductors.
41. Vertical Gallium Nitride MOSFETs for Electric Drivetrains.
42. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
43. Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis.
44. Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation
45. Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes
46. Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes
47. (Invited) Advancements in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
48. AlGaN High Electron Mobility Transistor for High Temperature Logic.
49. Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes .
50. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy.
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