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Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
- Source :
- IEEE Transactions on Electron Devices. 69:1931-1937
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........dd4bd53bd04bdfc11189bf647be1a0b6