Cite
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
MLA
Luke Yates, et al. “Demonstration of >6.0-KV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions.” IEEE Transactions on Electron Devices, vol. 69, Apr. 2022, pp. 1931–37. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dd4bd53bd04bdfc11189bf647be1a0b6&authtype=sso&custid=ns315887.
APA
Luke Yates, Brendan P. Gunning, Mary H. Crawford, Jeffrey Steinfeldt, Michael L. Smith, Vincent M. Abate, Jeramy R. Dickerson, Andrew M. Armstrong, Andrew Binder, Andrew A. Allerman, & Robert J. Kaplar. (2022). Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions. IEEE Transactions on Electron Devices, 69, 1931–1937.
Chicago
Luke Yates, Brendan P. Gunning, Mary H. Crawford, Jeffrey Steinfeldt, Michael L. Smith, Vincent M. Abate, Jeramy R. Dickerson, et al. 2022. “Demonstration of >6.0-KV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions.” IEEE Transactions on Electron Devices 69 (April): 1931–37. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dd4bd53bd04bdfc11189bf647be1a0b6&authtype=sso&custid=ns315887.