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Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes
- Source :
- IEEE Electron Device Letters. 42:1041-1044
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. We observe an etched-and-regrown junction with properties comparable to a continuously grown junction.
- Subjects :
- Materials science
business.industry
PIN diode
Schottky diode
Electronic, Optical and Magnetic Materials
law.invention
Length measurement
Quality (physics)
Critical parameter
law
Optoelectronics
Degradation (geology)
Power semiconductor device
Electrical and Electronic Engineering
Diffusion (business)
business
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........c594dd9927b6ef0f32516f382c0db04d