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We report the design, fabrication, and measurement of the field emission (FE) characteristics of AlGaN/GaN nanoscale lateral vacuum diodes with triangular cathodes and cathode to anode spacings from 50 to 600 nm. The FE characteristics of the AlGaN/GaN diodes with metallic or AlGaN/GaN anodes show successful rectification with forward bias FE current in the range of microamperes or milliamperes, respectively, when biased within a maximum range varying from 10 to 30 V. In the forward bias mode, the measured current I m vs applied anode to cathode bias V m are well fitted to Murphy–Good profiles associated with FE at higher biases, and an Ohmic leakage profile below the threshold for FE. Our results are the first successful demonstration of FE of electrons between the two two-dimensional electron gases (2DEGs) present on both sides of a nanogap formed by electron lithography through an AlGaN/GaN heterojunction. A qualitative explanation of the loop-type FE characteristics of both AlGaN/GaN vacuum diodes, with either metallic or AlGaN/GaN anodes, is presented. [ABSTRACT FROM AUTHOR]

Interface engineering is pivotal for enhancing the performance and stability of devices with layered structures, including solar cells, electronic devices, and electrochemical systems. Incorporating the interfacial dipole between the bulk layers effectively modulates the energy level difference at the interface and does not significantly influence adjacent layers overall. However, interfaces can drastically affect adjoining layers in ultrathin devices, which are essential for next‐generation electronics with high integrity, excellent performance, and low power consumption. In particular, the interfacial effect is pronounced in ultrathin semiconductors, which have a weak electric field screening effect. Herein, the substantial interfacial impact on the ultrathin silicon is shown, the p‐ to n‐type inversion of the semiconductor solely through the deposition of a self‐assembled monolayer (SAM) without external bias. The effects of SAMs with different interfacial dipoles are investigated by using Hall measurement and surface analytic techniques, such as UPS, XPS, and KPFM. Furthermore, the lateral electronic junction of the ultrathin silicon is engineered by the regioselective deposition of SAMs with opposite dipoles, and the device exhibits rectification behavior. When the interfacial dipole of SAM is manipulated, the rectification ratio changes sensitively, and thus the fabricated diode shows potential to be developed as a sensing platform. [ABSTRACT FROM AUTHOR]

Direct‐current triboelectric nanogenerators (DC‐TENGs) arising from electrostatic breakdown have garnered significant attention due to their advantages of rectification‐free operation, constant current output, and high output power density. Previous studies have primarily concentrated on improving its performance through structural design and parameter optimization, neglecting the potential benefits of external charge excitation. Here, a facile and universal strategy coupling charge pump and electric field enhancing effect with DC‐TENG (CE‐DC‐TENG) is proposed to improve the output performance of DC‐TENG. An alternating current TENG is used as the charge pump. A field‐enhancing conductive layer, which is introduced under the main DC‐TENG, is connected with the pump TENG to accumulate the charge and enhance the electric field for electrostatic breakdown. The effectiveness of this method is demonstrated by linear and rotary sliding mode TENGs. Furthermore, a fully integrated rotary sliding mode CE‐DC‐TENG is designed and fabricated, and it exhibits impressive performance with a 13‐fold higher power density of 1.56 W m−2 compared to conventional DC‐TENG. Moreover, it can directly power small electronics or be combined with a designed power management circuit for more efficient energy conversion. This work presents a new design strategy for improving the performance of DC‐TENG and facilitating its practical applications. [ABSTRACT FROM AUTHOR]

Optoelectronic devices based on geometrically asymmetric architecture have recently attracted attention due to their high performance as photodetectors and simple fabrication process. Herein, a p‐type 2D MoSe2 photodetector based on geometrically asymmetric contacts is reported for the first time. The device exhibits a high current rectification ratio of ≈104 and a large self‐powered photovoltage responsivity of ≈4.38 × 107 V W−1, as well as a maximum photocurrent responsivity of ≈430 mA W−1 along with a response time of ≈2.3 ms under 470 nm wavelength at 3 V bias voltage. The photocurrent responsivity is further enhanced to an ultrahigh responsivity of ≈1615 mA W−1 by applying a gate bias voltage due to the electrostatic modulation of carrier concentration in the MoSe2 channel. The simple fabrication process of the geometrically asymmetric MoSe2 diodes along with their high photodetection and diode rectifying performance make them excellent candidates for electronic and optoelectronic applications. [ABSTRACT FROM AUTHOR]

A high proportion of distributed generators (DGs) connected to the distribution network causes a significant change in the normal and fault currents of the system as well as in the linearization of the characteristics. It is difficult to adapt to conventional protection. This paper theoretically analyzes the possible impact of fault current characteristics on traditional protection based on single-ended informativeness after connecting to DGs. From the perspective of protection action, the evaluation index system of DG protection is established by considering the maximum short-circuit current output from DG. Combined with the relay protection requirements, the calculation method of evaluation indexes is given concerning the protection characteristics and expert experience. An analytic hierarchy process (AHP) and a CRITIC combination assignment method based on the principle of minimum information identification are proposed. The scores of different types of protection before and after DG access are calculated using the proposed methodology employing a typical distribution network example. The proposed method can quantitatively obtain the distribution network protection adaptability boundary. In the actual calculation example selected in this paper, a DG can reasonably improve the adaptability of the three-stage current protection when it increases the current amplitude at a penetration rate of 50%; the DG needs to adjust the three-stage current protection rectification value when it decreases the current amplitude at a penetration rate of 20%; and adaptive overcurrent protection and inverse time limit current protection need to be adjusted when the penetration rate of DG is 50%. Compared with the traditional protection evaluation method, the method adopted in this paper can intuitively derive the weak link between protection handling faults after DG access as well as the appropriate capacity of DG to improve protection performance. It can provide a powerful reference for the optimization of protection schemes after the high percentage of DG access. [ABSTRACT FROM AUTHOR]

This article presents two power converters with controllers attached to the Free‐Piston Stirling Linear Generator (FPSLG) and energy storage system (ESS). The rectifier uses hysteresis‐SVPWM current regulation and CB‐SPWM, while the buck‐boost converter utilizes the dual‐loop PI control method. The storage battery receives energy from a linear‐generator with a rectifier and converter. The FPSE and linear motors in the FPSLG convert thermal to electrical energy. A two‐level electrical energy conversion technique using a three‐phase AC signal to DC and DC‐DC converter has been devised to reduce output electrical energy oscillation as well as stabilize the generating system's DC power. Initially, the FPSE's nonlinear model and the three‐phase permanent magnet linear‐motor's linear mathematical model were created and followed by the ESS and control mechanism simulation. The simulation shows that the ESS system and control approach can give stable power to the storage battery using linear‐generator power. The PR controller replaces the PI controller in the position loop to improve frequency and displacement tracing. The control system design was simulated in MATLAB and the topology's feasibility and correctness were confirmed. Comparative analysis shows that, rectifier uses the H‐SVPWM's unity power factor of AC and stability controllability of the DC‐side voltage is better than the CB‐SPWM approach. [ABSTRACT FROM AUTHOR]

Ionic FETs have enormous potential for energy conversion, sensing, and ionic circuits due to their efficient regulation of the nanochannel. Here ionic FETs based on single‐crystal silicon nanopores and the rectification of the fabricated devices are studied. The electrical characterization results demonstrated that since the silicon‐based nanopores have the advantage of modulating the surface charge due to their semiconductor nature and benefitting from the effective 3D gating effect on the nanochannel, the magnitude and polarity of surface charge can be modulated by the gate voltage. The rectification effect can be adjusted by applying a certain voltage and fulfilling a transition between anion selectivity and cation selectivity when the surface charge polarity is reversed. Moreover, current–voltage characteristics of the reported ionic FET can be switched between ohmic and diode‐like regimes. The proposed ionic FETs supply a novel platform to study the ionic properties and have great potential to be applied in large‐scale ionic circuits due to their excellent performance. Finally, simulation results prove the surface charge modulated by the gate voltage determines the magnitude and direction of rectification, which is consistent with the reported experiment result. [ABSTRACT FROM AUTHOR]

The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices. The nonlinear Hall effect (NLHE) in non-centrosymmetric materials could enable various device applications, but it is usually limited by small voltage outputs and low operational temperatures. Here, the authors report NLHE in semiconducting tellurium thin flakes, showing a second-harmonic voltage output up to 2.8 mV at 300 K. [ABSTRACT FROM AUTHOR]

We investigated a flat-type p*-p LED composed of a p*-electrode with a local breakdown conductive channel (LBCC) formed in the p-type electrode region by applying reverse bias. By locally connecting the p*-electrode to the n-type layer via an LBCC, a flat-type LED structure is applied that can replace the n-type electrode without a mesa-etching process. Flat-type p*-p LEDs, devoid of the mesa process, demonstrate outstanding characteristics, boasting comparable light output power to conventional mesa-type n-p LEDs at the same injection current. However, they incur higher operating voltages, attributed to the smaller size of the p* region used as the n-type electrode compared to conventional n-p LEDs. Therefore, despite having comparable external quantum efficiency stemming from similar light output, flat-type p*-p LEDs exhibit diminished wall-plug efficiency (WPE) and voltage efficiency (VE) owing to elevated operating voltages. To address this, our study aimed to mitigate the series resistance of flat-type p*-p LEDs by augmenting the number of LBCCs to enhance the contact area, thereby reducing overall resistance. This structure holds promise for elevating WPE and VE by aligning the operating voltage more closely with that of mesa-type n-p LEDs. Consequently, rectifying the issue of high operating voltages in planar p*-p LEDs enables the creation of efficient LEDs devoid of crystal defects resulting from mesa-etching processes. [ABSTRACT FROM AUTHOR]

The cascaded H‐bridge (CHB) converter can achieve rich functions, such as active rectification, active power filtering, distributed energy storage, etc. The control of the CHB converter is a multiobjective optimization problem. Finite control set model predictive control (FCS‐MPC) is an effective method developed in recent years to solve this problem. However, because of the large amount of calculation, traditional FCS‐MPC cannot be directly used to control the multilevel CHB converter. It is also difficult to tune the weighting factors in traditional FCS‐MPC. To solve these problems, this paper proposes an improved sequential MPC (IS‐MPC) method for the CHB converter. The proposed method divides the control objectives of the CHB converter into different layers according to their priorities and the control degrees of freedom of each layer can be adjusted according to the system state. Simulation and hardware‐in‐the‐loop (HIL) implementation on a three‐phase 7‐level CHB converter shows that the proposed method can effectively control the ac current and submodule voltage of the CHB converter and reduce the switching loss. Moreover, it significantly reduced the calculation burden of traditional FCS‐MPC, and the use of the weighting factors is also avoided. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC. [ABSTRACT FROM AUTHOR]

In this work, polycrystalline n-CrSe2 nanosheets with thickness of 100 nm are grown on p-type Si wafers by the thermal deposition technique under vacuum pressure of 10−5 mbar. Structural and optical investigations showed the preferred growth of the trigonal phase of CrSe2 on Si substrates. Direct allowed transitions within an energy band gap of 2.60 eV were found to be dominant in the films. Silver contacts on the layers allowed construction of hybrid optoelectronic device structure formed from Ag/p-Si Schottky arm and p -Si/ n -CrSe2 pn junction. The device runs in such a way that forward biasing of the Schottky arm is accompanied by a reverse biasing of the pn junction. It is observed that the hybrid device structure can perform as a high-frequency capacitor. The capacitance–voltage characteristic curves show that these capacitors can respond to ac signals with frequencies of 100 MHz. They also exhibit bandstop filter characteristics allowing the passing of signals with return loss and voltage standing wave ratios exceeding 10 dB and 1.76, respectively, at 60 MHz. The device under study displayed rectifying and photo-sensing properties with an asymmetry ratio of 60 in the dark and 217 under excitation of visible light. Visible light excitation of these photosensors displayed voltage biasing dependence in their current responsivity, external quantum efficiency and specific detectivity, reaching values of 0.24 A/W, 65.2% and 4.83 × 109 Jones, respectively. The features of the hybrid devices which use CrSe2 nanosheets as active media make them good candidates for use in radio wave and visible light communication technologies. [ABSTRACT FROM AUTHOR]

Considerable efforts have recently been made to augment the power density of moisture‐enabled electric generators. However, due to the unsustainable ion/water molecule concentration gradients, the ion‐directed transport gradually diminishes, which largely affects the operating lifetime and energy efficiency of generators. This work introduces an electrode chemistry regulation strategy into the ionic diode‐type energy conversion structure, which demonstrates 1240 h power generation in ambient humidity. The electrode chemical regulation can be achieved by adding Cl−. The purpose is to destroy the passivation film on the electrode interface and provide a continuous path for ion‐electron coupling conduction. Moreover, this device simultaneously satisfies the requirements of fast trapping of moisture molecules, high rectification ratio transport of ions, and sustained ion‐to‐electron current conversion. A single device can deliver an open‐circuit voltage of about 1 V and a peak short‐circuit current density of 350 µA cm−2. Finally, the first‐principle calculations are carried out to reveal the mechanism by which the electrode surface chemistry affects the power generation performance. [ABSTRACT FROM AUTHOR]

Metal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the THz rectification process in the structure of an MOS transistor. The rectification depends on the nonlinear effect of the carrier dynamics. The paper shows that the so-called self-mixing effect occurs within the interface region between the source and the channel. The basic tool used numerical TCAD simulations, which offer a direct interpretation of different aspects of this interaction. The complex, 2D effect is examined in terms of its basic aspects by comparing the MOS structure with a simplified case study structure. We demonstrate that a contribution to the output-rectified voltage detectable at the drain arises from the charging of the drain well capacitance due to the diffusion of excess electrons from the self-mixing interaction occurring at the source barrier. In addition, the paper provides a quantitative description of the rectification process through the definition of the output equivalent circuit, offering a new perspective for the design of detection systems. [ABSTRACT FROM AUTHOR]

This research presents a unique bidirectional converter based on the active switched-inductor and switched-capacitor networks of the ASL-SU2C converter. The converter's primary advantages are its high voltage gain and reduced switch stress. This was accomplished by the converter using three inductors, two switched-capacitors, two switches, and diodes. Switches are used in place of diodes to enable bidirectional power flow in the proposed work, and synchronous rectification is used to boost efficiency by reducing conduction losses. Two inductors and two switches on the low voltage side of the converter aid in lowering the average switch current and, consequently, the current stress. The control operation is made simpler by the fact that two switches on the high voltage side (HVS) have one duty cycle and the other two switches on the low voltage side (LVS) have a different duty cycle. Consequently, two switches will always have identical duty cycles. In order to validate the theoretical findings, the performance of the transformerless bidirectional switched-inductor switched-capacitor (TBSISC) topology is examined in steady state, compared to that of other bidirectional converters, its efficiency is calculated, and experiments with a 500 W prototype are conducted. [ABSTRACT FROM AUTHOR]

It is impossible to imagine modern electronic circuitry without a p–n junction—an essential building block for transistors, rectifiers, amplifiers, photovoltaics, etc. Conventional fabrication processes (ion implantation or chemical diffusion) result in an immutable potential configuration depriving reconfigurability. In contrast, the superior electrostatic tunability, dangling bonds‐ and reconstruction‐free interfaces are some of the key features of 2D based heterostructures, making them promising candidates for cutting‐edge optoelectronic and memory applications. Herein, the intercoupled 2D ferroelectricity of 훼‐In2Se3 is utilized to introduce micron‐scale, non‐volatile electrostatic doping in ambipolar WSe2, enabling reconfigurable p–n junction. The actuation mechanism is based on the strong polarization field along the edge topology of In2Se3. The fabricated device presents stable p–n to n–p switching, a superior rectification ratio of ≈106, and a low leakage current of ≈10−12 A. Furthermore, the switchable short‐circuit current response is utilized to demonstrate a novel self‐powered, non‐volatile memory based on photovoltaic reading. The ferroelectric non‐volatility coupled with the ability to control the device operation using optical and electrical signals paves the way for ultrathin energy‐efficient, multi‐level optoelectronic and in‐memory logic devices. [ABSTRACT FROM AUTHOR]

This work reports on the properties of heterojunctions consisting of n-type Ga2O3 layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with p-type NiO and Cu2O counterparts, deposited by radio frequency and reactive, direct-current magnetron sputtering, respectively. After a comprehensive investigation of the properties of the single layers, the fabricated junctions on indium tin oxide (ITO)-coated glass showed high rectification, with an open circuit voltage of 940 mV for Ga2O3/Cu2O and 220 mV for Ga2O3/NiO under simulated solar illumination. This demonstrates in praxis the favorable band alignment between the sprayed Ga2O3 and Cu2O, with small conduction band offset, and the large offsets anticipated for both energy bands in the case of Ga2O3/NiO. Large differences in the ideality factors between the two types of heterojunctions were observed, suggestive of distinctive properties of the heterointerface. Further, it is shown that the interface between the high-temperature-deposited Ga2O3 and the ITO contact does not impede electron transport, opening new possibilities for the design of solar cell and optoelectronic device architectures. [ABSTRACT FROM AUTHOR]

A critical stage in developing high-density memristors is addressing the sneak current within the crossbar architecture. One of the effective strategies to endow the memristive cell with the ability to prevent sneak currents when it is in a low resistance state is to give it an inherent diode, known as a self-rectifying memristive cell. This study demonstrates the Schottky diode inside the MAPbI3-based memristive cell, a consequence of its interaction with the tungsten (W) electrode. The performance of memory devices is reliable with low-voltage operation, a resistance window having over ten of magnitude, and the retention time remains over 104 s. Prominently, the self-rectifying behavior is sustainable over 150 cycles and exhibits a rectification ratio of approximately 102 times. Density functional theory calculation reveals the presence of unoccupied gap states on an interfaced MAPbI3 surface, serving as electron trapping states during the charge transport across the W/MAPbI3 Schottky interface. Consequently, the conduction mechanism is primarily governed by an interfacial-controlled model, notably Schottky emission. This improvement promises to eliminate sneak currents in future crossbar array fabrication. [ABSTRACT FROM AUTHOR]

Due to their effective ionic-to-electronic signal conversion and mechanical flexibility, organic neural implants hold considerable promise for biocompatible neural interfaces. Current approaches are, however, primarily limited to passive electrodes due to a lack of circuit components to realize complex active circuits at the front-end. Here, we introduce a p-n organic electrochemical diode using complementary p- and n-type conducting polymer films embedded in a 15-μm -diameter vertical stack. Leveraging the efficient motion of encapsulated cations inside this polymer stack and the opposite doping mechanisms of the constituent polymers, we demonstrate high current rectification ratios ( 10 5 ) and fast switching speeds (230 μs). We integrate p-n organic electrochemical diodes with organic electrochemical transistors in the front-end pixel of a recording array. This configuration facilitates the access of organic electrochemical transistor output currents within a large network operating in the same electrolyte, while minimizing crosstalk from neighboring elements due to minimized reverse-biased leakage. Furthermore, we use these devices to fabricate time-division-multiplexed amplifier arrays. Lastly, we show that, when fabricated in a shank format, this technology enables the multiplexing of amplified local field potentials directly in the active recording pixel (26-μm diameter) in a minimally invasive form factor with shank cross-sectional dimensions of only 50×8 μ m 2 . Organic neural implants hold considerable promise for biocompatible neural interfaces. Here, the authors employ polymer-based organic electrochemical diodes and transistors to develop neuron-sized complex circuits, enabling multiplexing without crosstalk and demonstrate that, when integrated onto ultra-thin plastic, these circuits achieve high performance while maintaining minimal invasiveness. [ABSTRACT FROM AUTHOR]

1ϕ Z/quasi-Z source (ZSI/qZSI) inverters are nowadays increasingly used in a variety of power applications like renewable energy. During the rectification process of AC to DC side, the low-frequency ripples (2ω) are present in the DC side inductor current, capacitor voltage and also in DC-link voltage. These low-frequency ripples are the double line frequency power ripples that occur at two times the fundamental frequency i.e. at 100 Hz. In the case of renewable energy applications such as PV and fuel cells, these ripples are most hazardous. Due to current and voltage (2ω) ripples, the extraction of power from PV/fuel cell reduces. It also decreases its lifetime. These low-frequency ripples also increase the output current and voltage distortion. Ultimately it affects the performance of a system and degrades its power quality. Passive power decoupling techniques are used to eliminate/reduce low-frequency power ripples (2ω). The primary contribution of this article is to show a comprehensive overview of the passive power decoupling technique for the second harmonic (2ω) power elimination over two decades. This article also provides a proposed modified control strategy that achieves the elimination/reduction of (2ω) ripple in inductor current and capacitor voltage at the lowest values of qZS inductor and capacitor. The simulation and experimental results are also obtained for the proposed model. [ABSTRACT FROM AUTHOR]

In recent years, 2D reconfigurable phototransistors (RPTs) have been applied in broadband convolutional processing, retinomorphic hardware devices, and non‐volatile memorizers. However, there has been a lack of investigation into all‐2D Schottky junctions used in RPT with polarity control behavior. Herein, a vertically stacked multilayered WS2/WTe2 Schottky RPT is reported. The semimetal characteristics of 1T'‐WTe2 is designed to form a built‐in electric field of 69 meV across the heterojunction and WS2 exhibits gate‐tunable characteristics. Therefore, reconfigurable rectifying behavior and self‐driven bidirectional photo response can be achieved. The phototransistor possesses a gate‐tunable rectification ratio ranging from 10−2 to 105, and the corresponding logic half‐wave rectifier shows excellent switchable rectifying states. Under 635 nm illumination, the responsivity can be adjusted from −1325 to 430 mA W−1 with reversed signs. Meanwhile, the maximum power conversion efficiency is 2.84%, and the specific detectivity is 1.47 × 1012 Jones. The device shows both negative and positive responsivity with linear gate dependence within a voltage window of 10 V. Impressively, nonvolatile photovoltaic performance can be demonstrated by reversing short‐circuit current and open‐circuit voltage by applying and releasing pulsed gate voltage. Finally, reconfigurable polarization behavior, single‐pixel imaging, and the optical logic circuit are applicable to the heterostructure. [ABSTRACT FROM AUTHOR]

To enhance the stability and disturbance rejection of wireless charging systems for electric vehicles, we designed a bilateral collaborative control strategy based on BP neural networks, achieving closed-loop constant voltage control for the secondary rectification circuit. Integrating BP neural network adaptive PID parameters with dual-phase-shift control, this strategy outperforms conventional incremental PID controllers in terms of response time and overshoot. Validated on an 11 kW experimental platform, our approach demonstrated efficient response under disturbances; with a load switch from 10 Ω to 12 Ω, the system exhibited a mere 5% fluctuation rate and an impressive efficiency of up to 92.96%. [ABSTRACT FROM AUTHOR]

Graphene and several other two-dimensional (2D) carbon-based structures, including C3N, C3B, C2N, C3N4 (s-triazine), and C3N4 (tri-triazine), have attracted considerable attention due to their excellent thermal, mechanical, and electrical properties. In this study, the correlations between the interfacial thermal conductance (ITC) across these 2D nanostructures and the lattice-dynamical properties of the system, including (i) the phonon density of state (DOS) overlap between the sides of the interface and (ii) the percentage of different classes of vibrational modes for each heterostructure, are investigated. The results show that the percentage of localized interfacial modes is a strong descriptor for predicting ITC—even more effective than the widely accepted phonon DOS overlap. Moreover, the ITC between all combinations of these six carbon-based materials, its dependence on the length of the heterostructure, and the thermal rectification effect present in each interface structure is studied using non-equilibrium molecular dynamics simulations. The results show that the maximum and minimum ITC for infinite length systems belong to graphene/C3N and C2N/C3N4 (tri-triazine) heterostructures with values of 35.81 and 2.21 GW m−2 K−1, respectively. Comparing the thermal resistances at the interface and in the bulk of these heterostructures show that thermal transport in carbon-based 2D materials is influenced by the thermal resistance across their interfaces. These results not only contribute to our fundamental understanding of interfacial heat transfer, but can also serve as the basis for the design of nanoelectronic devices based on 2D materials, where the device level performance will indeed be influenced by interfacial phenomena. [ABSTRACT FROM AUTHOR]

Living organisms can sense extracellular forces via mechanosensitive ion channels, which change their channel conformations in response to external pressure and regulate ion transport through the cell membrane. Such pressure-regulated ion transport is critical for various biological processes, such as cellular turgor control and hearing in mammals, but has yet to be achieved in artificial systems using similar mechanisms. In this work, we construct a nanoconfinement by reversibly blocking a single nanopore with a nanoparticle and report anomalous and ultra-mechanosensitive ionic transport across the resulting nanoconfinement upon assorted mechanical and electrical stimuli. Our observation reveals a suppressed ion conduction through the system as the applied pressure increases, which imitates certain behaviors of stretch-inactivated ion channels in biological systems. Moreover, pressure-induced ionic current rectification is also observed despite the high ionic concentration of the solution. Using a combined experimental and simulation study, we correlate both phenomena to pressure-induced nanoparticle rotation and the resulting physical structure change in the blocked nanopore. This work presents a mechanosensitive nano-confinement requiring minimal fabrication techniques and provides new opportunities for bio-inspired nanofluidic applications. [ABSTRACT FROM AUTHOR]

Non-destructive and reversible modulations of polarity and carrier concentration in transistors are essential for complementary devices. The fabricated multi-gated WSe2 devices obtain dynamic electrostatic field induced electrically configurable functions and demonstrate as diode with high rectification ratio of 4.1 × 105, as well as n- and p-type inverter with voltage gain of 19.9 and 12.1, respectively. Benefiting from the continuous band alignment induced modulation of channel underneath the dual gates, the devices exhibit high-performance photodetection in wide spectral range. The devices yield high photo-responsivity (5.16 A W-1) and large 'light/'dark ratio (1 × 105). Besides, the local gate fields accelerate the separation of photo-induced carriers, leading to fast response without persistent current. This strategy takes the advantage of the simplified design and continues to deliver integrated circuits with high density. The superior electrical and photodetection characteristics exhibit great potency in the domain of future optoelectronics. [ABSTRACT FROM AUTHOR]

2D materials provide an effective strategy for the construction of fast‐responsive and highly sensitive Schottky heterojunction devices. However, the strong Fermi pinning at the contact between bulk metallic electrodes and 2D semiconductor materials greatly hinders the wide application of such devices in optoelectronics. Herein, a self‐powered photodetector with high performance is fabricated based on an all‐2D van der Waals (vdWs) heterojunction composed of metallic 2H‐NbSe2 and semiconducting MoSe2. Benefiting from the strong built‐in electric field, the device exhibits a high rectification ratio of 2.1 × 103. Furthermore, the photovoltaic effect can be observed in a broad spectrum ranging from 405 to 980 nm without external voltage, where a maximum responsivity of 64.92 A W−1, a maximum specific detectivity of 2.39 × 1014 Jones, and a large on–off current ratio >105 are obtained at 650 nm. Simultaneously, the efficient charge separation at the high‐quality heterointerface of NbSe2/MoSe2 results in a fast response/recovery time of 180/80 µs. This work demonstrates the promising potential of the 2D metallic NbSe2 as an electrode forming a Schottky heterojunction to realize a high‐performance broadband photodetector for near‐infrared communication. [ABSTRACT FROM AUTHOR]

Summary: A new second‐generation current conveyor‐based full‐wave rectifier (FWR) is proposed in this work. The proposed voltage‐mode FWR comprises a single active building block, four diodes, and three grounded resistors without needing any passive element matching problems. It does not suffer from any bias voltages and/or currents; therefore, it does not need extra circuitry. It can simultaneously provide positive and negative rectifications; thus, it is flexible. The proposed FWR has high input impedance; accordingly, it can be easily cascadable. Several simulations via the SPICE program and some experiments by using the AD844s are achieved. 0.18‐μm TSMC CMOS technology parameters are used in the simulations. [ABSTRACT FROM AUTHOR]

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Most atomically thin piezoelectrics suffer from weak piezoelectric response or current rectification along the thickness direction, which largely hinders their applications in a vertical crossbar architecture. Therefore, exploring new types of ultrathin materials with strong longitudinal piezoelectric coefficient and rectification is highly desired. In this study, the monolayer of van der Waals CuInP2S6 (CIPS) is successfully exfoliated and its strong piezoelectricity in the out‐of‐plane direction with an effective coefficient d33eff of ≈5.12 pm V−1, which is one or two orders of magnitude higher than that of most existing monolayer materials with intrinsic d33, is confirmed. A prototype vertical device is further constructed and the current rectification is achieved through the flexoelectricity induced by the scanning tip force. The switching between low and high rectification states can be readily controlled by tuning the mechanical loads. These findings manifest that CIPS possesses promising application in vertical nanoscale piezoelectric devices and provides a novel strategy for achieving a good current rectification in ultrathin piezoelectrics. [ABSTRACT FROM AUTHOR]

The synthesis of the nanosized multifunctional thin film provides new solutions for many technological issues and consider a great step for miniaturized technology. Toward these goals, AgSbTe 2 semi-nanocrystalline thin films of different thicknesses were synthesized by the thermal evaporation technique. The structural features were investigated by X-ray diffraction, and selected area electron diffraction (SAED) yielding a semi-nanocrystalline thin film of grain size ranging from 9.98 to 21.38 nm. The energy-dispersive X-ray spectroscopy (EDAX) verified the high purity and stoichiometry of the deposited films. For optoelectronic application, many optical parameters, including band gap (E g), Urbach energy (E u), Refractive index (n), dispersion energy (E d), electronic polarizability (α e), and interband transition strength (J CV) were extensively discussed. The optical band gap reduced from 1.41 to 1.04 eV upon increasing the thickness from 150 to 550 nm. The temperature dependence of the electrical resistivity (ρ) of nanosized thin film was measured and the activation energy was estimated and it was found that the resistivity increased up to 450 K asserting the semiconductor behavior of the films. As for diode application, The Ag/2D-MoS 2 /p-AgSbTe 2 (550 nm)/n-Si/Al heterostructure diode was constructed by thermal evaporation and all the diode parameters alongside conduction mechanism were studied in detail. AgSbTe 2 -based diode showed a low rectification ratio; however, the ideality factor (n) and zero bias barrier height (Φ b) had optimal values of about 1.40 and 0.75 at room temperature, respectively. [ABSTRACT FROM AUTHOR]

Most atomically thin piezoelectrics suffer from weak piezoelectric response or current rectification along the thickness direction, which largely hinders their applications in a vertical crossbar architecture. Therefore, exploring new types of ultrathin materials with strong longitudinal piezoelectric coefficient and rectification is highly desired. In this study, the monolayer of van der Waals CuInP2S6 (CIPS) is successfully exfoliated and its strong piezoelectricity in the out‐of‐plane direction with an effective coefficient d33eff of ≈5.12 pm V−1, which is one or two orders of magnitude higher than that of most existing monolayer materials with intrinsic d33, is confirmed. A prototype vertical device is further constructed and the current rectification is achieved through the flexoelectricity induced by the scanning tip force. The switching between low and high rectification states can be readily controlled by tuning the mechanical loads. These findings manifest that CIPS possesses promising application in vertical nanoscale piezoelectric devices and provides a novel strategy for achieving a good current rectification in ultrathin piezoelectrics. [ABSTRACT FROM AUTHOR]

We have demonstrated a capacitively coupled Hall‐type MHD generator using ECR plasma. To clarify the characteristics of the fabricated MHD generator, we measured the power generation characteristics as a function of magnetic field strength using a DC Hall‐type MHD power generation experiment. The results showed that the output power decreased due to magnetic pressure at the higher magnetic field. However, the output power corresponded to the theoretical value at the lower magnetic field. An AC Hall‐type MHD power generation experiment was conducted using an AC magnetic field. As a result, full‐wave rectification voltage was observed as per theory. Finally, capacitively coupled Hall‐type MHD power generation experiments were conducted, and full‐wave rectified waveforms were observed as in AC Hall‐type MHD power generation. These waveforms were similar to the output waveforms predicted from theory. These results show that the capacitively coupled Hall‐type MHD generator is feasible. [ABSTRACT FROM AUTHOR]

Thermal control elements, i.e., thermal diodes, switches, and regulators, can control the heat flow in an analogous way in how electronic devices control electrical currents. In particular, a thermal diode allows a larger heat flux in one direction than in the other. This has aroused the interest of researchers working on the thermal management of electronics, refrigeration, and energy conversion. Solid-state thermal diodes are attractive because they are silent, reliable, lightweight, and durable. While some solid-state thermal diodes have been developed at the nano- and microscale, the leap to the macroscale has yet to be made. A macroscale thermal diode would play a crucial role in the future development of applications related to caloric refrigeration and heat pumping. Additionally, the temperature changes of caloric materials (due to the caloric effect) are ideal for testing these thermal devices. This paper aims to numerically evaluate the influence of a macroscopic solid-state thermal diode in a magnetocaloric refrigeration device under transient and quasi-steady-state conditions. Materials with different temperature-dependent properties were analyzed, and the most promising ones were selected for the operating range of a magnetocaloric device (290–296 K). The highest achieved magnetocaloric thermal rectification ratio under transient conditions was up to 295-times higher than with quasi-steady-state operation. This shows that transient operation should be considered for future progress with this technology. [ABSTRACT FROM AUTHOR]

The paper presents a simple control and high-accuracy measurement method for a four-electrode conductivity probe based on the principle of the bi-directional voltage pulse. The two-way differential AC (alternating current) pulse voltage signal for the reference resistance and solution resistance is modulated into the single DC stationary voltage response signal to drop the demand for software and hardware and effectively eliminate the influence of excitation voltage pulse amplitude on measurement accuracy, and then the synchronous rectification DC measurement is proposed without any control timing. Meanwhile, the mathematical expression between the single output DC voltage signal and the solution conductivity is given. The test results in the laboratory and in the field indicate that the relative error of the conductivity measurement is within 2.5% in a conductance range of 10 uS/cm to 200 mS/cm, and the proposed measurement method has a good application prospect in application. [ABSTRACT FROM AUTHOR]

In recent years, flexible electronics have been an area of considerable interest due to the development of materials such as transparent semiconductor oxides, which are compatible with flexible substrates. Herein, lithography and magnetron sputtering are used to fabricate a flexible p–n diode of SnOx thin films on a polyimide substrate and electrical characterization is performed by varying the bending cycles. Using specific oxygen concentrations in the reactive gas mixture of the sputtering system, transparent p‐SnO0.8 (8.0% ppO2) and n‐SnO1.2 (18.5% ppO2) on polyimide substrates are successfully deposited. Electrical results show the SnOx diode exhibits a threshold voltage of 2.24 V and a great rectification ratio of 102. It is found the diode has excellent I–V rectifying behavior even when subjected to bending with a radius of curvature of 10 mm. It is important to note that after 200 bending cycles at a curvature radius of 50 mm, the p‐SnOx/n‐SnOx diode retains its rectifying behavior, making it attractive for large‐scale applications in transparent and flexible electronics. [ABSTRACT FROM AUTHOR]

Semiconductor junctions are of great significance for the development of electronic and optoelectronic devices. Here, controllable switching is demonstrated from a Schottky junction to a p–n junction in a partially ionic liquid‐gated MoS2 device with two types of metal contacts. Excellent rectification behavior with a current on‐off ratio exceeding 106 is achieved in both Schottky and p–n junction modes. The formation of Schottky junction at the Pd electrode/MoS2 contact and p–n junction at the p‐MoS2/n‐MoS2 interface is revealed by spatially resolved photocurrent mappings. The switching between the two junctions under ionic gate modulation is correlated with the evolution of the energy band, further validated by the finite element simulation. The device exhibits excellent photodetection properties in the p–n junction mode, including an open circuit voltage up to 0.84 V, a responsivity of 0.24 A W−1, a specific detectivity of 1.7 × 1011 Jones, a response time of hundreds of microseconds and a linear dynamic range of up to 91 dB. The electric field control of such high‐performance Schottky and p–n junctions opens up fresh perspectives for studying the behavior of junction and the development of 2D electronic devices. [ABSTRACT FROM AUTHOR]

The article titled "The first European transistor. A success that could have been but wasn't" talks about the invention of the transistor in Europe. It mentions that the point-contact transistor from Bell Labs in the US and the "transistrón" in France were invented almost simultaneously. In Paris, two German scientists invented the transistrón, a solid-state amplifier similar to the transistor from Bell Labs. Although the resemblance between the two devices was astonishing, the transistrón did not receive the same recognition as the transistor. The article also mentions the background of semiconductor research in Germany during World War II. It states that this area acts as an asymmetric barrier for the flow of electrons, restricting the current flow to a single direction and rectifying the input signal. It is mentioned that during the war, German scientific leaders urged further research on radar systems operating at microwave frequencies. However, Germany did not consider it necessary to investigate microwave frequency radars, and this affected their radar technology. Additionally, it is mentioned that Mataré and Welker intensified their studies on semiconductor-based rectifiers, particularly those made of silicon and germanium, for the detection of microwave radar echoes. During the 1930s, silicon and germanium were considered metals due to impurities in the available samples in Germany. However, during World War II, it was discovered that higher purity silicon and germanium behaved as semiconductors. Two German scientists, Welker and Mataré, worked in Paris to manufacture germanium rectifiers and discovered consistent amplification in June 1948, six months after Bardeen and Brattain's transistor at Bell Labs. Despite their success, they failed to interest ministerial authorities. They later founded Intermetall and continued working in Paris before seeking employment in Germany. The article narrates the story of Herbert Mataré and Heinrich Welker, two European scientists who were pioneers in the research and development of transistors in the 1950s. Mataré founded a company called Intermetall in Düsseldorf, Germany, which manufactured germanium rectifiers and transistors. On the other hand, Welker worked at Siemens in Erlangen, where he researched III-V compound semiconductors. Although both made significant advances in transistor technology, the United States took the lead in the semiconductor industry due to its infrastructure and resources. [Extracted from the article]

L-Histidine (C6H9N3O2), one of the most prominent positively charged amino acids, has shown a lot of potential as a future molecular device. A subcomponent of proteins, L-Histidine has been acknowledged for its applications in designing future switching devices and logic gates. Interpreting its transport parameters while aligning it as a central molecule with a series of metallic electrodes using a self-consistent function and implementing the density functional theory and non-equilibrium Green's function (NEGF-DFT) approach for our computational analysis, we observe that the proposed devices exhibit dissimilar rectification ratios (RR), besides demonstrating negative differential resistance (NDR) regimes. The RRs of DFT-D3 corrected and the uncorrected molecular device is also compared to verify the impact of van der Waals (vdW)-type interaction on current–voltage characteristics. The molecular device with copper electrodes yields the maximum rectification ratio of 8.1, while the device with palladium electrodes yields the highest peak-to-valley current ratio of 1.28. Such a study proffers the idea of choosing proper electrodes for exploring the rectification ratio of biomolecules. Moreover, using these L-Histidine-based molecular devices, we have proposed AND Logic gate and OR Logic gate, which can pave the way to an alternate research area of using peptides as future molecular devices. [ABSTRACT FROM AUTHOR]

For Schottky barrier‐modulated memristors based on 2D semiconductors, it has, to date, not been possible to achieve control over defect type and concentration as the measured switching characteristics vary considerably even under similar fabrication conditions. In this work, four distinct types of memristors are identified based on the combination of low and high resistance sequences, as well as volatile and nonvolatile characteristics. All these four types of memristors were previously observed experimentally by different research labs. It is found that the specific behavior of each memristor type can be explained by the Schottky barrier height modulation and current rectification arising from the concerted effects of the concentration, charge polarity and mobility of defects. The conditions required to realize the four types of 2D semiconductor‐based memristors are analyzed and design guidelines for fabricating each of these four types of memristors are provided. [ABSTRACT FROM AUTHOR]

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The article presents a study which proposed Hayness-Shockley experiment analogs to investigate photocarrier surface extraction. Topics discussed include fundamental indium thin oxide (ITO) thin-film properties and surface photovoltage (SPV) of the heterojunctions, planar silicon (Si) device performance under dark, and quantum efficiency for planar Si devices.

As a promising two-dimensional (2D) layered material, black arsenic phosphorus (b-AsP) alloys have received growing attention due to their unique properties and their ability for high-performance broadband photodetection. However, high dark current and slow response speed have already become bottlenecks for further development. Manual vertical van der Waals heterojunctions made of different 2D materials offer opportunities to alleviate such bottlenecks in a simple and low-energy way. The rational design of band alignment can facilitate device performance. In this work, we design and achieve a type-I vertically stacked WSe2/b-As0.084P0.916 device, which exhibits a rectification ratio of 102 along with an unusual backward current as low as 10−12 A. As such, this device can function as an ultrasensitive photodetector, which shows excellent photoresponse properties from the visible to near-infrared region (275–850 nm), with a responsivity of 244 A/W, a specific detectivity of 2.27 × 1012 Jones, and a fast response speed of τrise ≈ 5.1 ms and τdecay ≈ 4 ms. Compared to the dark state, the hole mobility under light stimulation is raised more than ten times (from 1.1 to 12.1 cm2 V−1 s−1), which contributes to numerous excited electron–hole pair transfers from WSe2 to b-As0.084P0.916. The responsivity and detectivity increase by 5 and 3 orders of magnitude, respectively, after applying gate voltage, indicating remarkable gate-controlled properties. These results suggest that the WSe2/b-As0.084P0.916 heterostructure is a promising candidate for future electronic and optoelectronic applications. [ABSTRACT FROM AUTHOR]

The integrants of proteins, i.e., amino acids, have grossed exceptional recognition for their applications towards designing imminent switching devices. Among 20 amino acids, L-Lysine (i.e., positively charged) has the highest number of CH2 chains, and such chains affect the rectification ratio in several biomolecules. Towards molecular rectification, we investigate the transport parameters of L-Lysine in conjunction with five different coinage metal electrodes, i.e., Au, Ag, Cu, Pt and Pd to form five distinct devices. We deputize the NEGF-DFT formulism for computing conductance, frontier molecular orbitals, current–voltage, and molecular projected self-Hamiltonian calculations using a self-consistent function. We focus on the most widely used electron exchange correlation combination, i.e., the PBE version of GGA with DZDP basis set. The molecular devices under inquisition exhibit phenomenal rectification ratios (RR) in conjunction with negative differential resistance (NDR) regimes. The nominated molecular device offers a substantial rectification ratio of 45.6 with platinum electrodes and a prominent peak to valley current ratio of 1.78 with copper electrodes. We deduce from these findings that L-Lysine based molecular devices would implicit in future bio-nanoelectronic devices. The OR and AND logic gates are also proposed hinged on highest rectification ratio of L-Lysine-based devices. [ABSTRACT FROM AUTHOR]

Roman ceramics provide a unique glimpse into the daily life and culture of ancient Roman society. These ceramics were used for a variety of purposes, from storing food and drink to serving as decoration in homes and public spaces. In this article, we will explore some of the key archaeological features found on Roman ceramics and what they can tell us about Roman society. The main challenge is to create a Digital Twin of the ARS objects and artefacts using geometric capturing and semantic modelling of archaeological information. Moreover, the individualization and comparison of features, along with their visualization, extraction, and rectification, results in a strategy and application for comparison of these features using both geometrical and archaeological aspects with a comprehensible rule set. This method of a semi-automatic semantic model-based comparison workflow for archaeological features on Roman ceramics is showcased, discussed, and concluded in three use cases: woman and boy, human--horse hybrid, and bears with local twists and shifts. [ABSTRACT FROM AUTHOR]

THz detection in a silicon structure can be an effective instrument not only for image detection, and material and gas sensing, but also for communications. Next-generation 6G communications assume the possibility of achieving a large-band transmission, using free space propagation with THz carriers. This possibility relies on the availability of an effective, low-cost detector technology. THz detection by self-mixing can provide an effective amplitude demodulation of the incoming carrier, with antennas directly fabricated on the chip. In this case, the speed of the detectors represents a crucial point in the definition of the bandwidth whereby several GHz are indeed required by the communication systems. The self-mixing process is intrinsically very fast, since it depends on the non-linear interaction of the radiation with the majority carriers inside the semiconductor structure. In this paper, we evaluate analytically the time dependence of the onset of the rectified voltage. A potential propagation along the detector channel follows the self-mixing rectification, accompanied by the charging of the parasitic capacitances of the structure. A numerical simulator can easily evaluate the delay due to this propagation along the structure, but the transient of the true origin of the signal, i.e., the establishment of the self-mixing voltage, at the current time, can be only inferred by analytical approach. In this work, we use the model developed for the THz rectification in the depletion region of an MOS capacitance to develop a transient model of the formation of the characteristic self-mixing charge dipole, and of the generation of the rectified potential. Subsequently, we show by TCAD simulations the propagation of the effect on the semiconductor structure, which surrounds the rectifying barrier, and evaluate the overall time response of a detector. [ABSTRACT FROM AUTHOR]

A recent experiment [Hortelano et al., Semicond. Sci. Technol. 32, 125005 (2017)] reported a rectification effect that appeared in curved narrow ballistic channels of a two-dimensional electron gas when the strength of a magnetic field applied to the channels was tuned. The phenomenon was reproduced by classical billiard simulations as resulting from a transmission asymmetry caused by diffuse boundary scattering. However, this manifests breakdown of a commonly used simple model for diffuse boundary since the magnetic-field dependence of the transmission in two-terminal geometries has to be symmetric in equilibrium. We demonstrate here that this tendency of the system predicted by the billiard simulations is a real transmission asymmetry effect that emerges in the nonequilibrium transport. We perform nonequilibrium quantum-mechanical simulations with taking into account Coulomb repulsion. Experimental observations are presented to demonstrate consistencies with the numerical results. [ABSTRACT FROM AUTHOR]

Ag2ZnSnSe4 (AZTSe) thin films were synthesized using a simple solution approach combined with a post-selenization technique. A single phase of the AZTSe film with kesterite structure and high crystal quality was obtained at the optimized selenization temperature and time. The AZTSe film showed an optical bandgap of 1.4 eV, an n-type conduction with an electron concentration of 5.7 × 1015 cm−3, and a mobility of 9.1 cm2 V−1 s−1. An optimized n-type AZTSe film was fabricated on a p-GaN/sapphire to form an n-AZTSe/p-GaN heterojunction. The current–voltage measurement of the n-AZTSe/p-GaN heterojunction photodetector showed good rectification characteristics. The response wavelength of the photodetector covered a wide range from ultraviolet to infrared (370–960 nm). The response peak was located at 810 nm with a responsivity of 2.9 × 10−4 A/W. [ABSTRACT FROM AUTHOR]

Non-reciprocal charge transport in supercurrent diodes (SDs) has polarized growing interest in the last few years for their potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid superconductor/semiconductor structures or metallic systems subject to moderate magnetic fields, thus showing limited potentiality for practical applications in SCE. Here, we report the design and realization of a monolithic device that shows a valuable SD effect by exploiting a Dayem bridge-based superconducting quantum interference device. Our structure allows reaching rectification efficiencies (η) up to ∼ 6 %. Moreover, the absolute value and the polarity of η can be selected on demand by the modulation of an external magnetic flux or by a gate voltage, thereby guaranteeing high versatility and improved switching speed. Furthermore, our SD operates in a wide range of temperatures up to about 70% of the superconducting critical temperature of the titanium film composing the interferometer. Our SD effect can find extended applications in SCE by operating in synergy with widespread superconducting technologies such as nanocryotrons, rapid single flux quanta, and memories. [ABSTRACT FROM AUTHOR]

Band alignment engineering is crucial and feasible to enrich the functionalities of van der Waals heterojunctions (vdWHs) for rectifying functions in next-generation information storage technologies. However, band alignment tunability is volatile as it needs a sustained external field to maintain the Femi level of single components, which hinders the implementation of nonvolatile functions. Here, the ferroelectric semiconducting nature of alpha-In2Se3 is utilized to design vdWHs based on two-dimensional transition metal dichalcogenides (TMDs)/alpha-In2Se3, where TMDs are used as the channel, and the ferroelectric semiconductor alpha-In2Se3 is assembled as an asymmetric gate. A density functional theory validates that the band offset in a homogeneous TMDs channel is tuned by coupling the effect of the semiconducting nature and asymmetric ferroelectric gate of alpha-In2Se3, which induces simultaneous rectifying and memory functions. This includes a programmable rectifying ratio of up to 104, ultra-large memory window (110 V), programming/erasing of 104, and good endurance. The tuned band offset from the asymmetric ferroelectric semiconductor gate is conceptualized as a guideline to realize a simultaneous rectifying and memory device with high programmability. [ABSTRACT FROM AUTHOR]