AgSbTe2 semi-nanocrystalline thin films as a multifunctional platform for optoelectronic and diode applications.

The synthesis of the nanosized multifunctional thin film provides new solutions for many technological issues and consider a great step for miniaturized technology. Toward these goals, AgSbTe 2 semi-nanocrystalline thin films of different thicknesses were synthesized by the thermal evaporation technique. The structural features were investigated by X-ray diffraction, and selected area electron diffraction (SAED) yielding a semi-nanocrystalline thin film of grain size ranging from 9.98 to 21.38 nm. The energy-dispersive X-ray spectroscopy (EDAX) verified the high purity and stoichiometry of the deposited films. For optoelectronic application, many optical parameters, including band gap (E g), Urbach energy (E u), Refractive index (n), dispersion energy (E d), electronic polarizability (α e), and interband transition strength (J CV) were extensively discussed. The optical band gap reduced from 1.41 to 1.04 eV upon increasing the thickness from 150 to 550 nm. The temperature dependence of the electrical resistivity (ρ) of nanosized thin film was measured and the activation energy was estimated and it was found that the resistivity increased up to 450 K asserting the semiconductor behavior of the films. As for diode application, The Ag/2D-MoS 2 /p-AgSbTe 2 (550 nm)/n-Si/Al heterostructure diode was constructed by thermal evaporation and all the diode parameters alongside conduction mechanism were studied in detail. AgSbTe 2 -based diode showed a low rectification ratio; however, the ideality factor (n) and zero bias barrier height (Φ b) had optimal values of about 1.40 and 0.75 at room temperature, respectively. [ABSTRACT FROM AUTHOR]