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Abstract: In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO2/Si3N4/SiO2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention. [Copyright &y& Elsevier]

Abstract: In this work, we present an experimental and theoretical study of nitride-trap devices with a HTO/Al2O3 bi-layer blocking oxide. Such (Silicon/Alumina/HTO/Nitride/Oxide/Silicon) SAONOS devices are compared with standard (Silicon/HTO/Nitride/Oxide/Silicon) SONOS and (Silicon/Alumina/Nitride/Oxide/Silicon) SANOS memories. The role of the different layers (blocking oxide and control gate) is deeply analyzed, focusing on their impact on memory performance and reliability. Then, a semi-analytical model is developed, which provides a good understanding of the physical mechanisms at the origin of program/erase characteristics. [Copyright &y& Elsevier]

Abstract: In this paper, we evaluate the potentiality of hafnium aluminium oxide (HfAlO) high-k materials for control dielectric application in non-volatile memories. We analyze the electrical properties (conduction and parasitic trapping) of HfAlO single layers and SiO2/HfAlO/SiO2 triple layer stacks as a function of the HfAlO thickness and Hf:Al ratio. A particular attention is given to the electrical behaviour of the samples at high temperature, up to 250°C. Experimental results obtained on silicon nanocrystal memories demonstrate the high advantage of HfAlO based control dielectrics on the memory performances for Fowler–Nordheim operation. Then an analytical model is presented, to simulate the program erase characteristics in the transient regime and at saturation, depending on the high-k control dielectric properties. A very good agreement is obtained between the experimental data and the simulation results. [Copyright &y& Elsevier]

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. [Copyright &y& Elsevier]

The steady improvement in the performance of computing systems seen for many decades is levelling off as the miniaturization of semiconducting technology approaches the atomic limit, facing severe physical and technological issues. Neuromorphic computing is an emerging solution which makes use of silicon technology in a different way, inline with the computational principles observed in animal nervous systems. In this article, we argue that the nervous systems of insects in particular offer themselves as an ideal starting point for incorporation into realistic neuromorphic systems and review research in developing insect-inspired neuromorphic systems. We conclude with an exciting yet tangible vision of a full neuromorphic sensory-motor system where a liquid state machine modelling the function of the insect mushroom body links input to output and allows for amalgamation of the work discussed in a hierarchical framework of a full system inspired by the concept of how information flows through insects., (Copyright © 2018 Elsevier Inc. All rights reserved.)

In this paper, we present an alternative approach to perform spike sorting of complex brain signals based on spiking neural networks (SNN). The proposed architecture is suitable for hardware implementation by using resistive random access memory (RRAM) technology for the implementation of synapses whose low latency (<1μs) enables real-time spike sorting. This offers promising advantages to conventional spike sorting techniques for brain-computer interfaces (BCI) and neural prosthesis applications. Moreover, the ultra-low power consumption of the RRAM synapses of the spiking neural network (nW range) may enable the design of autonomous implantable devices for rehabilitation purposes. We demonstrate an original methodology to use Oxide based RRAM (OxRAM) as easy to program and low energy (<75 pJ) synapses. Synaptic weights are modulated through the application of an online learning strategy inspired by biological Spike Timing Dependent Plasticity. Real spiking data have been recorded both intra- and extracellularly from an in-vitro preparation of the Crayfish sensory-motor system and used for validation of the proposed OxRAM based SNN. This artificial SNN is able to identify, learn, recognize and distinguish between different spike shapes in the input signal with a recognition rate about 90% without any supervision.

We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm(-1)), in good agreement with predictions using ellipsometric optical constants of Cu.

The missing link: Ferrocene and porphyrin monolayers are tethered on silicon surfaces with short (see picture, left) or long (right) linkers. Electron transfer to the silicon substrate is faster for monolayers with a short linker.Ferrocene and porphyrin derivatives are anchored on Si(100) surfaces through either a short two-carbon or a long 11-carbon linker. The two tether lengths are obtained by using two different grafting procedures: a single-step hydrosilylation is used for the short linker, whereas for the long linker a multistep process involving a 1,3-dipolar cycloaddition is conducted, which affords ferrocene-triazole-(CH(2))(11)-Si or Zn(porphyrin)-triazole-(CH(2))(11)-Si links to the surface. The modified surfaces are characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Cyclic voltammetry experiments show that the redox activity of the tethered ferrocene or porphyrin is maintained for both linker types. Microelectrode capacitor devices incorporating these modified Si(100) surfaces are designed, and their capacitance-voltage (C-V) and conductance-voltage (G-V) profiles are investigated. Capacitance and conductance peaks are observed, which indicates efficient charge transfer between the redox-active monolayers and the electrode surface. Slower electron transfer between the ferrocene or porphyrin monolayer and the electrode surface is observed for the longer linker, which suggests that by adjusting the linker length, the electrical properties of the device, such as charging and discharging kinetics and retention time, could be tuned.