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MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices.
- Source :
-
Optics express [Opt Express] 2012 Jun 18; Vol. 20 (13), pp. 13612-21. - Publication Year :
- 2012
-
Abstract
- We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm(-1)), in good agreement with predictions using ellipsometric optical constants of Cu.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 20
- Issue :
- 13
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 22714426
- Full Text :
- https://doi.org/10.1364/OE.20.013612