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Effect of high-k materials in the control dielectric stack of nanocrystal memories
- Source :
- Scopus-Elsevier
- Publication Year :
- 2004
-
Abstract
- In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
- Subjects :
- Materials science
Silicon
business.industry
Silicon dioxide
Gate dielectric
chemistry.chemical_element
Dielectric
Settore ING-INF/01 - Elettronica
chemistry.chemical_compound
Engineering (all)
chemistry
Nanocrystal
Nanoelectronics
Stack (abstract data type)
Electronic engineering
Optoelectronics
business
High-κ dielectric
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Scopus-Elsevier
- Accession number :
- edsair.doi.dedup.....21b32c8b32c15f3c8f1a5c6aaedced04