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This paper is concerned with organic contamination from a partially fluorinated o-ring used in a furnace for a high-temperature process. The organic outgas was confirmed by Fourier transform infrared analysis of the furnace exhaust gas. Experiments from practical trench dynamic random access memory disclosed that outgassed organic contaminants from the nitride process would severely worsen the tunneling leakage current performance of the storage dielectric and lead to fatal yield loss even though the cell capacitance was almost uninfluenced. To eliminate this yield detractor requires several test runs prior to real production after installation of the partially fluorinated o-ring; otherwise, a fully fluorinated o-ring is needed. From a cost viewpoint, the latter is highly suggested. [ABSTRACT FROM AUTHOR]

Embedded cores are being increasingly used in the design of large system-on-a-chip (SoC). Because of the high complexity of SoC, the design verification is a challenge for system integrators. To reduce the verification complexity, the port-order fault (POF) model was proposed. It has been used for verifying core-based designs and the corresponding verification pattern generation has been developed. Here, the authors present an automorphic technique to improve the efficiency of the automatic verification pattern generation (AVPG) for SoC design verification based on the POF model. On average, the size of pattern sets obtained on the ISCAS-85 and MCNC benchmarks are 45% smaller and the run time decreases 16% as compared with the previous results of AVPG. [ABSTRACT FROM AUTHOR]

Presents an automatic-verification pattern generation (AVPG) for system-on-a-chip design verification based on the port-order fault (POF) model. Details of experiments on combinational and sequential benchmarks; Mechanism of conducting POF verification; Description of a verification pattern generation algorithm; Discussion on the combinational AVPG.

Owing to the delayed introduction of high-k storage dielectric for trench DRAM, a new technology to extend the existing NO storage dielectric becomes a prerequisite. For trench DRAM, the nitride film of NO-based storage dielectric has been proved to possess higher quality by proper N2O treatment, which enables further reduction in nitride thickness and extension of scaling limit for the existing storage dielectric. A 164% leakage current improvement without sacrificing the cell capacitance can be achieved through this process, while keeping the outstanding reliability performance of less than 438 ppm failure rate after a ten-year operation. Most importantly, this new process can be fully integrated into incumbent furnace process, which means that no additional tool investment is required, and it is crucial for trench DRAM manufacturers to maintain their competitive advantage before the high-k material prevails at 65 nm technology node. [ABSTRACT FROM AUTHOR]

A simplified and integrated technique has been proposed to form an oxide/nitride storage dielectric in a single-furnace process by low-pressure oxidation and nitride film deposition with an extra N2O treatment for the trench dynamic random access memory (DRAM). Compared to the conventional nitride/oxide dielectric, this newly developed dielectric enjoys cell-capacitance-enhancement factor as high as 12.5% without degrading the leakage current and electron-trapping property. From the reliability test, the qualification for the DRAM application is also proven by the dielectric lifetime longer than 10-years. Most importantly, this technique can reduce the production cycle time without an additional equipment investment, which is essential in the cost-competitive DRAM arena. [ABSTRACT FROM AUTHOR]

A crosstalk effect leads to increases in delay and power consumption and, in the worst-case scenario, to inaccurate results. With the scale down of technology to deep-submicrometer level, the crosstalk effect between adjacent wires becomes more and more serious, particularly between long on-chip buses. In this paper, we propose a deassembler/ assembler technique to eliminate undesirable crosstalk effects on bus transmission. By taking advantage of the prefetch process, where the instruction/data fetch rate is always higher than the instruction/data commit rate, the proposed method incurs almost no penalty in terms of dynamic instruction count. In addition, when the bus width is 128 b, the required number of extra bus wires is only 7 as compared to the 85 extra bus wires needed in the work of Victor and Keutzer. [ABSTRACT FROM AUTHOR]

A novel autosomal recessive mutation arose spontaneously in a breeding colony of Chinese Kunming mice. The characteristics of these mutant mice include progressive irreversible hair loss soon after birth, rhinocerotic appearance, and shorter life span. Histological evaluation of skin revealed the homogeneous enlargement of utriculi, and the formation of several rows of large cysts. Sequencing the complete cDNA of the hairless gene identified two polymorphisms and a homozygous transition for a G→A at nucleotide position 3110 (exon 12) leading to the substitution of tryptophan by a nonsense codon, designated W911X. This allele was named rhinocerotic and short-lived, with the symbol hrrhsl. Addition of hairless gene mutation into the expanding hairless mutation database allows further development of genotype/phenotype correlations towards understanding inherited atrichia. [ABSTRACT FROM AUTHOR]