756 results on '"spintronic"'
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252. HETEROSTRUCTURES BASED ON THE LARGE-AREA Sb2Te3 TOPOLOGICAL INSULATOR FOR SPIN-CHARGE CONVERSION
- Author
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Longo, E, FANCIULLI, MARCO, LONGO, EMANUELE MARIA, Longo, E, FANCIULLI, MARCO, and LONGO, EMANUELE MARIA
- Abstract
I dispositivi elettronici che sfruttano proprietà legate allo spin elettronico costituiscono un settore molto promettente per lo sviluppo della nanoelettronica del futuro. Recentemente, gli isolanti topologici tridimensionali (IT-3D), quando posti a contatto con materiali ferromagnetici (FM), giocano un ruolo centrale nel contesto del miglioramento dell’efficienza di conversione tra spin e carica elettronici in eterostrutture di tipo FM/TI. L’oggetto principale di questa tesi è lo studio delle interazioni chimico-fisiche tra l’IT-3D Sb2Te3, nelle sue forme granulare ed epitassiale, con film di Fe e Co attraverso l’uso di tecniche di Diffrazione/Riflettività di raggi-X, spettroscopia di risonanza ferromagnetica (FMR) e pompaggio di spin in risonanza ferromagnetica (SP-FMR). In concomitanza con l’ottimizzazione delle proprietà dei materiali, un particolare interesse è stato rivolto verso l’impatto industriale della ricerca presentata. Per questo motivo, per la produzione di Sb2Te3 e di alcuni dei FM impiegati, sono state impiegate tecniche di deposizione di materiali su larga scala ( 4 pollici), quali la Metal Organic Chemical Vapor Deposition (MOCVD) e l’Atomic Layer Deposition (ALD) rispettivamente. Una approfondita caratterizzazione chimica, strutturale e magnetica dell’interfaccia Fe/ Sb2Te3-granulare ha evidenziato un marcato intermixing tra i materiali e una generale tendenza degli atomi di Fe nel legare con l’elemento calcogenuro quando presente in un IT. Attraverso trattamenti termici rapidi e a bassa temperatura sottoposti sui film di Sb2Te3 granulare prima della crescita del Fe, l’interfaccia Fe/Sb2Te3-granulare è risultata morfologicamente più netta e chimicamente stabile. Lo studio di film sottili di Co cresciuti attraverso ALD su Sb2Te3 granulare ha permesso la produzione di interfacce Co/Sb2Te3-granulare di alta qualità, con la possibilità inoltre di modificare le proprietà magneto-strutturali dei film di Co attraverso una selezione appropriata, Spin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was in
- Published
- 2021
253. Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride
- Author
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Varotto, S, Nessi, L, Cecchi, S, Slawinska, J, Noel, P, Petro, S, Fagiani, F, Novati, A, Cantoni, M, Petti, D, Albisetti, E, Costa, M, Calarco, R, Buongiorno Nardelli, M, Bibes, M, Picozzi, S, Attane, J, Vila, L, Bertacco, R, Rinaldi, C, Varotto S., Nessi L., Cecchi S., Slawinska J., Noel P., Petro S., Fagiani F., Novati A., Cantoni M., Petti D., Albisetti E., Costa M., Calarco R., Buongiorno Nardelli M., Bibes M., Picozzi S., Attane J. -P., Vila L., Bertacco R., Rinaldi C., Varotto, S, Nessi, L, Cecchi, S, Slawinska, J, Noel, P, Petro, S, Fagiani, F, Novati, A, Cantoni, M, Petti, D, Albisetti, E, Costa, M, Calarco, R, Buongiorno Nardelli, M, Bibes, M, Picozzi, S, Attane, J, Vila, L, Bertacco, R, Rinaldi, C, Varotto S., Nessi L., Cecchi S., Slawinska J., Noel P., Petro S., Fagiani F., Novati A., Cantoni M., Petti D., Albisetti E., Costa M., Calarco R., Buongiorno Nardelli M., Bibes M., Picozzi S., Attane J. -P., Vila L., Bertacco R., and Rinaldi C.
- Abstract
The development of spintronic devices has been limited by the poor compatibility between semiconductors and ferromagnetic sources of spin. The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. We show that ferroelectric switching by electrical gating is possible in germanium telluride, despite its high carrier density. We also show that spin-to-charge conversion has a similar magnitude to what is observed with platinum, but the charge current sign is controlled by the orientation of ferroelectric polarization. Comparison between theoretical and experimental data suggests that the inverse spin Hall effect plays a major role in switchable conversion.
- Published
- 2021
254. SYNTHESIS AND CHARACTERIZATION OF 2,6-DIISOPROPYLPHENOXY TETRAPYRAZINOPORPHYRAZINES AS POTENTIAL MOLECULAR QUBITS
- Author
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Marx, Benjamin
- Subjects
- tetrapyrazinoporphyrazine, phthalocyanine, spintronic, coherence, Inorganic Chemistry, Organic Chemistry
- Abstract
This thesis reports the synthesis of metal-free and metal-containing phthalocyanine derivatives using methods typical for that class of functional dyes. A mixture of the target compounds prepared here, one paramagnetic and one diamagnetic tetrapyrazinoporphyrazine, will be tested for their potential use in spintronics – the application of spin-active species in molecular electronics. Phthalocyanines and their derivatives are well-known for their ease of preparation and tunability; they have been utilized as sensitizers for photodynamic therapy of cancer and solar cells, as well as in catalysis and chemical sensing. Tetrapyrazinoporphyrazine complexes are compared with the parent phthalocyanine as their chemistry is similar but electronically are distinct. All compounds synthesized were investigated spectroscopically (UV-Vis, magnetic circular dichroism), electrochemically, and computationally; all methods showed the expected results typical of tetrapyrazinoporphyrazines. The paramagnetic vanadyl complex was confirmed by EPR spectroscopy and elucidated by single crystal X-ray diffraction. The green-colored macrocycles are substituted on their periphery by 2,6-diisopropylphenoxy groups; this creates a large nanoporous crystal stabilized by hydrophobic interactions that is useful for spintronic investigations. Under certain solvent conditions, a red linear trimeric product was isolated, and its optical properties and partial characterization is reported as well.
- Published
- 2022
255. Experimental and theoretical studies of synthesized [formula omitted] double perovskite material.
- Author
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Amraoui, S., Magoussi, H., Dehmani, Y., Ba Mohammed, B., Abouarnadasse, S., and Kerouad, M.
- Subjects
- *
ELECTRONIC density of states , *PEROVSKITE , *ELECTRONIC band structure , *FERROMAGNETIC materials , *DENSITY functional theory - Abstract
[Display omitted] • Bi 2 NiCrO 6 is synthesized by the sol–gel method. • Bi 2 NiCrO 6 shows a cubic structure with an Fm3m space group. • Bi 2 NiCrO 6 is a metallic and ferromagnetic material (μ=1.17μB). • Bi 2 NiCrO 6 is a good candidate for spintronic application. In this work, the experimental and theoretical studies of Bi 2 NiCrO 6 double perovskite material have been performed. The synthesis of Bi 2 NiCrO 6 is made by sol–gel method. The X-ray diffraction (XRD) characterisation of the material reveals that the double perovskite adopts a cubic structure (a = 7.75 Å) with Fm3m space group. Based on the Density Functional Theory (DFT) with spin polarized calculations, the electronic and magnetic properties have been investigated. From the total electronic density of states and the electronic band structure analysis, it is found that Bi 2 NiCrO 6 exhibits a metallic behavior. It is also found that the studied compound is ferromagnetic material with a total magnetic moment 1.17 μ B . The results show that Bi 2 NiCrO 6 material is a good candidate for using in devices that requires multifunctional operations including spintronic. [ABSTRACT FROM AUTHOR]
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- 2022
- Full Text
- View/download PDF
256. Binary weight network utilizing multi-functional spin-orbit torque device for image recognition.
- Author
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Dong, Kaifeng, Li, Wendi, Tao, Ying, Yang, Liu, Jin, Fang, Liu, Xiaoyang, Xu, Handong, and Wang, Xiaoguang
- Subjects
- *
IMAGE recognition (Computer vision) , *NANOELECTROMECHANICAL systems , *TORQUE , *COMPUTING platforms , *MAGNETIZATION - Abstract
• Binary synapse based on the deterministic switching of the magnetization states by encoding high and low resistance states. • Sigmoid neuron based on the stochastic switching probability of the magnetization in the free layer. • All-spin BWN based on the multi-functional nanoscale SOT devices achieves ∼81.73 % recognition accuracy on the CIFAR-10 dataset. Spintronic devices driven by spin–orbit torque (SOT) have a lot of potential for future neuromorphic computing hardware platforms. Nevertheless, problems such as multistate loss, weight time-dependent variability, and output discontinuity ensue when the device size is reduced to the nanoscale, which are contradictory to the requirements of traditional high-precision neural networks. In this study, we propose a high-precision all-spin neural network based on magnetization switching of a simple nanoscale multi-functional SOT device. The all-spin neural network is implemented by the Binary Weight Network, in which the binary synapse is encoded by the two states formed by the device's deterministic switching and the practical neuron is realized by its stochastic switching probability. Furthermore, we use a difference derivation training algorithm for the general-purpose network in a novel way to be more compatible with the discontinuous neuron output. Using this strategy, our network can reach ∼81.73 % recognition accuracy on the universal CIFAR-10 dataset, paving the way for future practical hardware implementation of nanoscale SOT devices in high-precision compact neuromorphic computing. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
257. Observation of room temperature metal free ferromagnetism in sulfur doped graphitic carbon nitride.
- Author
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Majumder, Chinmoy, Kumar Mondal, Tapas, Bhattacharya, Shatabda, and Saha, Shyamal K
- Subjects
- *
FERROMAGNETISM , *NITRIDES , *ELECTRON configuration , *SULFUR , *WAVE functions , *MAGNETIC properties - Abstract
• Sulfur doped g-C 3 N 4 samples by pyrolysis method. • Room temperature ferromagnetism. • Low-temperature positive magnetoresistance due to wave function shrinkage. • Negative magnetoresistance follows the weak localization effect. Generation of superior magnetic property in two-dimensional nanosheets is an important issue in condensed matter physics due to its potential exploitation in the field of Spintronic application. Metal-free ferromagnetism in 2D materials could generate a long spin lifetime due to its s/p electron configuration, which is the key factor for spin transfer. In the present work, we have synthesised 2D graphitic carbon nitride doped with sulfur (S) atom to investigate the magnetic property due to the interaction of the S atom with the lattice of graphitic carbon nitride. Due to S doping, we get a long-range ferromagnetic ordering in our sample, persisting upto room temperature, and the precise control of S concentration can tune the magnetic property of the system. Interestingly, the magnetotransport (MR) study shows a transition from positive MR at low temperature to negative MR at room temperature. The wave function shrinkage model explains the low-temperature positive MR, where the negative MR follows the weak localization effect. Thus, the overall magnetic and electrical response of S doped graphitic carbon nitride makes it a potential candidate for future spintronic application. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
258. High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors
- Author
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Nair, Sarath Mohanachandran, Mayahinia, Mahta, Tahoori, Mehdi B, Perumkunnil, Manu, Zahedmanesh, Houman, Croes, Kristof, Garello, Kevin, Marinelli, Tommaso, Evenblij, Timon, Kar, Gouri Sankar, and Catthoor, Francky
- Subjects
Technology ,magnetic tunnel junction (MTJ) ,Science & Technology ,Physics ,Engineering, Electrical & Electronic ,Spintronics ,Latches ,Flip-flops ,ELECTROMIGRATION ,Transistors ,Magnetization ,Physics, Applied ,Engineering ,Low power design ,radiation-hardened ,Physical Sciences ,Power demand ,process variations ,retention latch ,Magnetic tunneling ,spintronic - Abstract
ispartof: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY vol:21 issue:2 pages:258-266 status: published
- Published
- 2021
259. Circuits magnoniques à base de YIG ultra-mince nanostructuré pour les applications hyperfréquences
- Author
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Merbouche, Hugo, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Université Paris-Saclay, Abdelmadjid Anane, and Paolo Bortolotti
- Subjects
Magnonic ,Ondes de spins ,Spintronic ,Electronique de spin ,Spin-orbit torque ,SOT ,YIG ,Magnonique ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Spin waves ,Couple de spin orbite - Abstract
This thesis was aimed at studying the generation, propagation and manipulation of spin-waves in nanostructures of thin films of Y₃Fe₅O₁₂ (YIG) and one of its doped variants (BiYIG), in order to enable the design of spin-wave based signal processing schemes and devices operating at radiofrequencies. Two goals have been pursued in parallel: 1.Provide a better understanding of spin-wave radiofrequency devices for analog applications such as filters or delay lines. 2.Explore the physics of spin-orbit-torque (SOT) applied to propagating spin-waves and understand the non-linear phenomena that have so far hindered any practical magnonic amplification scheme. Prior to the present work, spin-orbit effects in YIG|Pt microstructures have been demonstrated to be a powerful new paradigm to control the propagation and emission of coherent spin-waves. An intense research effort has been put in the lab to grow epitaxial nanometer thick YIG films by pulsed laser deposition (PLD). The film thickness was reduced down to a few nanometers while preserving its excellent magnetic properties. More recently, ultra-thin Bi-doped YIG films have been developed, introducing a large and controllable perpendicular magnetic anisotropy term (PMA) while preserving the excellent damping properties of YIG. Additionally, the Bi atoms induce a very large Faraday rotation angle which increases the sensitivity of direct imaging methods like Brillouin Light Scattering microscopy (BLS) by nearly two orders of magnitude. This important step forward on the material aspect opened up new possibilities for the realization of magnonic devices that can have a large impact on the ICT industry. Indeed, microfabrication of YIG is now possible thanks to the advent of high-quality nanometer thick YIG films. In the meantime, BiYIG, with its controllable PMA and large magneto-optical coupling, quickly imposed itself as a material whose properties are particularly well suited to the study of SOT effects. During this thesis, analog devices have been fabricated using standard nano-lithography techniques. They are of two sorts: 1.A delay lines based on a 300 nm thick YIG film have been characterized. The impedance matching problem was analytically solved, and we demonstrated a clear path toward realistic optimized targets in terms of losses and functionalities. All the analysis and modeling tools have been implemented in open source python programs. 2.Additionally, we have studied the efficient implementation of radiofrequency filtering using periodic nanostructurations thanks to the advent of 20 nm thick YIG films with low damping. A width-modulated waveguide was studied, and the experimental results were accurately reproduced using full-scale micromagnetic simulations, paving the way toward the reliable optimization of magnonic crystals’ properties. Using a thickness-modulated waveguide, we strongly suppressed the extra losses induced by defects, demonstrating a very efficient implementation of a 1D magnonic crystal. Finally, active nano-magnonic devices have been fabricated. By engineering the perpendicular magnetic anisotropy of Bi-doped YIG, we showed that we can both achieve a very high temperature stability (50 times larger than YIG) on a wide range of temperatures (260K to 400K) and a suppression of the leading detrimental non-linear coupling term in supercritical SOT systems. The transient regime of the spin-current induced auto-oscillation was fully characterized, and a spin-wave amplification scheme based on the spin-orbit-torque phenomenon was demonstrated. We also revealed a frequency or wavevector dependence of the amplification efficiency in both the subcritical and the supercritical regime.; Cette thèse porte sur l’étude de la génération, la propagation et la détection d’ondes de spins dans des nanostructures élaborées à partir de couches ultra-minces (quelques nanomètres d’épaisseur) de Y₃Fe₅O₁₂ (YIG) et un de ses variant dopé (BiYIG). Le but est de permettre le développement de dispositifs pour le traitement des signaux hyperfréquences, basés sur les ondes de spins. Deux objectifs ont été poursuivis en parallèle : 1.Apporter une meilleure compréhension des dispositifs magnoniques hyperfréquence pour des application analogiques tel que les filtres ou les lignes à retard. 2.Explorer la physique du couple orbital de spin (SOT) appliqué aux ondes de spins progressives et comprendre les effets non-linéaires qui ont jusqu’à présent empêchés la réalisation d’un dispositif efficace d’amplification des ondes de spins. Ce travail repose sur les études démontrant que les effets spin-orbite dans les microstructures YIG|Pt constitue un puissant paradigme pour le control de la propagation et de l'émission d'ondes de spins. Il s’appuie également sur l’expertise développée au laboratoire dans la croissance de couches ultra fine épitaxiées de YIG, élaborées par ablation laser pulsée (PLD). Plus récemment, des couches ultra-minces de YIG dopé au Bismuth (BiYIG) ont été développées. L’introduction du Bi induit une forte anisotropie magnétique perpendiculaire (PMA), tout en préservant les excellentes propriétés dynamiques du YIG. Le Bi augmente également fortement la rotation Faraday et, par conséquent, améliore d’autant la sensibilité des méthodes d'imagerie directe, telle que la microscopie à diffusion Brillouin (BLS). Ces avancées importantes sur l'aspect matériaux ont ouvert de nouvelles possibilités pour la réalisation de dispositifs magnoniques. En effet, la micro-fabrication du YIG est désormais possible. Par ailleurs, le BiYIG, avec son anisotropie accordable et son fort couplage magnéto-optique, s'est rapidement imposé durant ma thèse comme un matériau parfaitement adapté à l’exploration des effets SOT. Au cours de cette thèse, des dispositifs analogiques ont été fabriqués à l'aide de techniques standard de nano-lithographie. Ils sont de deux sortes : 1.Des lignes à retard basées sur un film de YIG de 300 nm d'épaisseur ont été caractérisées. Le problème de l’adaptation d'impédance a été résolu de façon analytique, nous permettant d’établir des objectifs ciblés, basés sur nos paramètres expérimentaux, dans le but d’optimiser les caractéristiques techniques des lignes à retard magnoniques. Les outils d'analyse et de modélisation développés au cours de cette thèse ont été implémentés dans des programmes python et mis en libre accès. 2.Par ailleurs, nous avons démontré l’efficacité de filtres hyperfréquence basés sur la nano-structuration périodique de guides d’ondes de YIG fin (20 nm). Un guide d'ondes modulé en largeur a été étudié et les résultats expérimentaux reproduits avec précision à l'aide de simulations micromagnétiques à l’échelle, ouvrant la voie à une optimisation fiable des propriétés des structures périodiques de YIG (cristaux magnoniques). En utilisant un guide d'ondes modulé en épaisseur, nous avons fortement supprimé les pertes engendrées par les défauts de fabrication, démontrant une réalisation efficace d'un cristal magnonique 1D. Enfin, des dispositifs nano-magnoniques actifs ont été fabriqués. En modulant l'anisotropie du BiYIG, nous avons montré que nous pouvions obtenir une stabilité thermique très élevée sur une large gamme de températures et une suppression du terme de couplage non linéaire préjudiciable dans les systèmes SOT supercritiques. Le régime transitoire de l'auto-oscillation, induite par le courant de spin, a été entièrement caractérisé, et un dispositif d'amplification des ondes de spin, basé sur le phénomène de SOT, a été démontré. Une dépendance en fréquence ou en vecteur d’ondes de l’efficacité de l’amplification a été observée dans les régimes sous-critiques et sur-critiques.
- Published
- 2021
260. HETEROSTRUCTURES BASED ON THE LARGE-AREA Sb2Te3 TOPOLOGICAL INSULATOR FOR SPIN-CHARGE CONVERSION
- Author
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LONGO, EMANUELE MARIA, Longo, E, and FANCIULLI, MARCO
- Subjects
FIS/01 - FISICA SPERIMENTALE ,isolanti topologici ,ALD ,spin pumping ,FMR ,topologicalinsulator ,spintronic ,spintronica - Abstract
I dispositivi elettronici che sfruttano proprietà legate allo spin elettronico costituiscono un settore molto promettente per lo sviluppo della nanoelettronica del futuro. Recentemente, gli isolanti topologici tridimensionali (IT-3D), quando posti a contatto con materiali ferromagnetici (FM), giocano un ruolo centrale nel contesto del miglioramento dell’efficienza di conversione tra spin e carica elettronici in eterostrutture di tipo FM/TI. L’oggetto principale di questa tesi è lo studio delle interazioni chimico-fisiche tra l’IT-3D Sb2Te3, nelle sue forme granulare ed epitassiale, con film di Fe e Co attraverso l’uso di tecniche di Diffrazione/Riflettività di raggi-X, spettroscopia di risonanza ferromagnetica (FMR) e pompaggio di spin in risonanza ferromagnetica (SP-FMR). In concomitanza con l’ottimizzazione delle proprietà dei materiali, un particolare interesse è stato rivolto verso l’impatto industriale della ricerca presentata. Per questo motivo, per la produzione di Sb2Te3 e di alcuni dei FM impiegati, sono state impiegate tecniche di deposizione di materiali su larga scala ( 4 pollici), quali la Metal Organic Chemical Vapor Deposition (MOCVD) e l’Atomic Layer Deposition (ALD) rispettivamente. Una approfondita caratterizzazione chimica, strutturale e magnetica dell’interfaccia Fe/ Sb2Te3-granulare ha evidenziato un marcato intermixing tra i materiali e una generale tendenza degli atomi di Fe nel legare con l’elemento calcogenuro quando presente in un IT. Attraverso trattamenti termici rapidi e a bassa temperatura sottoposti sui film di Sb2Te3 granulare prima della crescita del Fe, l’interfaccia Fe/Sb2Te3-granulare è risultata morfologicamente più netta e chimicamente stabile. Lo studio di film sottili di Co cresciuti attraverso ALD su Sb2Te3 granulare ha permesso la produzione di interfacce Co/Sb2Te3-granulare di alta qualità, con la possibilità inoltre di modificare le proprietà magneto-strutturali dei film di Co attraverso una selezione appropriata di substrati. Con l’obbiettivo di migliorare le proprietà dei film di Sb2Te3, dei trattamenti termici specifici sono stati condotti su Sb2Te3 granulare appena cresciuto, ottenendo film di Sb2Te3 altamente orientati con una qualità cristallina vicina al cristallo singolo di tipo epitassiale. Questi substrati di Sb2Te3 sono stati utilizzati per produrre eterostrutture di Au/Co/Sb2Te3-epitassiale e Au/Co/Au/Sb2Te3-epitassiale per studiare la loro risposta di FMR. I dati di FMR per il campione Au/Co/Sb2Te3-epitassiale sono stati interpretati considerando un contributo di Two Magnon Scattering (TMS) dominante, verosimilmente a causa della presenza di rugosità magnetica all’interfaccia Co/Sb2Te3-epitassiale. L’introduzione di un interlayer di Au per evitare il contatto diretto tra Co e Sb2Te3 si è dimostrato vantaggioso per la totale eliminazione del contributo di TMS. Misure di SP-FMR sono state condotte sulla struttura ottimizzata Au/Co/Au/Sb2Te3-epitassiale, sottolineando il ruolo giocato dallo strato di Sb2Te3-epitassiale nel processo di SP. I segnali di SP ricavati da campioni di Au/Co/Au/Si(111) e Co/Au/Si(111) sono stati utilizzati per determinare l’efficienza di conversione spin-carica ottenuta dall’introduzione dello strato di Sb2Te3. L’efficienza estratta è stata calcolata interpretando i dati di SP-FMR attraverso i modelli di effetto Edelstein inverso ed effetto di Spin-Hall inverso, i quali hanno dimostrato che l’IT-3D Sb2Te3 è un candidato promettente per essere impiegato nella prossima generazione di dispositivi spintronici. Spin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was investigated studying their FMR response. The FMR data for the Au/Co/Sb2Te3 samples were interpreted considering the presence of a dominant contribution attributed to the Two Magnon Scattering (TMS), likely due to the presence of an unwanted magnetic roughness at the Co/epitaxial-Sb2Te3 interface. The introduction of a Au interlayer to avoid the direct contact between Co and Sb2Te3 layers was shown to be beneficial for the total suppression of the TMS effect. SP-FMR measurements were conducted on the optimized Au/Co/Au/epitaxial-Sb2Te3 structure, highlighting the role played by the epitaxial Sb2Te3substrate in the SP process. The SP signals for the Au/Co/Au/Si(111) and Co/Au/Si(111) reference samples were measured and used to determine the effective spin-to-charge conversion efficiency achieved with the introduction of the epitaxial Sb2Te3 layer. The extracted SCC efficiency was calculated interpreting the SP-FMR data using the Inverse Edelstein effect and Inverse Spin-Hall effect models, which demonstrated that the Sb2Te3 3D-TI is a promising candidate to be employed in the next generation of spintronic devices.
- Published
- 2021
261. An Overview of Spintronic True Random Number Generator
- Author
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Zhifeng Zhu, Kai Lu, Amit Shukla, Xi Zhao, Yemin Dong, Zhenxiao Fu, Yi Tang, and Yumeng Yang
- Subjects
Hardware security module ,Computer science ,Random number generation ,Materials Science (miscellaneous) ,Biophysics ,General Physics and Astronomy ,02 engineering and technology ,Encryption ,01 natural sciences ,0103 physical sciences ,spin obit torque ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,Physical and Theoretical Chemistry ,spintronic ,Throughput (business) ,Randomness ,Mathematical Physics ,Jitter ,010302 applied physics ,business.industry ,true random bit generators ,Spin-transfer torque ,spin transfer torque ,021001 nanoscience & nanotechnology ,magnetic tunnel junction ,lcsh:QC1-999 ,CMOS ,0210 nano-technology ,business ,lcsh:Physics - Abstract
A True Random Number Generator is an essential component in data encryption, hardware security, physical unclonable functions, and statistical analyses. Conventional CMOS devices usually exploit the thermal noise or jitter to generate randomness, which suffers from high energy consumption, slow bit generating rate, large area, and over-complicated circuit. In this mini review, we introduce the novel physical randomness generating mechanism based on the stochastic switching behavior of magnetic tunnel junctions. As compared to CMOS technologies, the random number generator based on spintronic devices can have many inherent advantages, such as simpler structure, compact area, higher throughput, and better energy-efficiency. Here, we review and compare various existing schemes at the device and circuit levels to achieve high performance magnetic tunnel junctions based on a True Random Number Generator. Future research trends and challenges are also discussed to stimulate more works in this area.
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- 2021
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262. Functionalized magnetic composite nano/ microfibres with highly oriented van der Waals CrI3 inclusions by electrospinning
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João P. Araújo, Anabela G. Rolo, Rosa M. F. Baptista, Etelvina de Matos Gomes, Loukya Boddapati, Francis Leonard Deepak, Vahideh Bayzi Isfahani, João Filipe Horta Belo da Silva, Bernardo Almeida, and Universidade do Minho
- Subjects
Phase transition ,Materials science ,Bioengineering ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,CrI3 ,symbols.namesake ,Spintronic ,Nano ,Magnetic properties ,2D magnets ,Antiferromagnetism ,General Materials Science ,Electrical and Electronic Engineering ,Composite material ,Science & Technology ,Magnetic moment ,Electrospinning ,Mechanical Engineering ,General Chemistry ,Nano/microfibres ,Functional systems ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Ferromagnetism ,Mechanics of Materials ,symbols ,van der Waals force ,0210 nano-technology ,Monoclinic crystal system - Abstract
This study reports on the synthesis of highly oriented chromium triiodide (CrI3) magnetic inclusions inside nano/microfibres with a polyethylene oxide matrix, prepared by the electrospinning technique. The structural, microstructural and spectroscopic analysis shows uniformly dispersed CrI3 nanosized inclusions inside the fibres, presenting a C2/m monoclinic structure at room temperature, where their c-axis is perpendicular to the fibre mat plane and the ab layers are in-plane. Analysis of the magnetic properties show that the samples have a ferromagnetic-paramagnetic phase transition at ∼55-56 K, lower than that of bulk CrI3. Noticeably, a field-driven metamagnetic transition is observed below ∼45 K, from M versus H curves, when the applied magnetic field is perpendicular to the fibre mat plane, while it is strongly reduced when the field is in-plane. This anisotropic behaviour is attributed to the field-induced changes from antiferromagnetic to ferromagnetic interlayer magnetic moment alignment along the CrI3 c-axis stacked layers. These CrI3 electrospun fibres then show an efficient cost-effective route to synthesize magnetic composite fibres with highly oriented van der Walls inclusions, for spintronic applications, taking advantage of their anisotropic 2D layered materials properties., We are grateful to the Fundacao Para a Ciencia e a Tecnologia (FCT) for the financial support through the Physics Centers of the Universities of Minho and Porto (Ref. UIDB/04650/2020) and projects UTAPEXPL/NTec/0046/2017, NORTE-01-0145-FEDER-028538 and PTDC/FIS-MAC/29454/2017. J H Belo thanks FCT for the Grant SFRH/BD/88440/2012, the project PTDC/FIS-MAC/31302/2017 and his contract DL57/2016 reference SFRH-BPD-87430/2012. J P Araujo and J H Belo thank the funding from the project, with reference POCI-01-0145-FEDER-032527. V B Isfahani acknowledges a Post-Doc grant from the project NORTE-01-0145-FEDER-028538. L Boddapati acknowledges the Nano TRAIN for Growth II program by the European Commission through the Horizon 2020 Marie Sklodowska-Curie COFUND Programme and support provided by the International Iberian Nanotechnology Laboratory. We are gratefull to Professor Michael Belsley, of the Physics Department at Minho University, for the fruitfull discussions on the manuscript.
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- 2021
263. Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review
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Eunseon Yu, Kaushik Roy, Cheng Wang, and Amogh Agrawal
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Computer science ,Process (engineering) ,Neurosciences. Biological psychiatry. Neuropsychiatry ,02 engineering and technology ,Review ,neuromorphic ,01 natural sciences ,computing ,0103 physical sciences ,Electronic engineering ,Implementation ,spintronic ,device ,Neuromorphic hardware ,010302 applied physics ,Resistive touchscreen ,General Neuroscience ,021001 nanoscience & nanotechnology ,multi-level ,Controllability ,Neuromorphic engineering ,Key (cryptography) ,ferroelectric ,0210 nano-technology ,RC321-571 ,Efficient energy use ,Neuroscience - Abstract
Achieving multi-level devices is crucial to efficiently emulate key bio-plausible functionalities such as synaptic plasticity and neuronal activity, and has become an important aspect of neuromorphic hardware development. In this review article, we focus on various ferromagnetic (FM) and ferroelectric (FE) devices capable of representing multiple states, and discuss the usage of such multi-level devices for implementing neuromorphic functionalities. We will elaborate that the analog-like resistive states in ferromagnetic or ferroelectric thin films are due to the non-coherent multi-domain switching dynamics, which is fundamentally different from most memristive materials involving electroforming processes or significant ion motion. Both device fundamentals related to the mechanism of introducing multilevel states and exemplary implementations of neural functionalities built on various device structures are highlighted. In light of the non-destructive nature and the relatively simple physical process of multi-domain switching, we envision that ferroic-based multi-state devices provide an alternative pathway toward energy efficient implementation of neuro-inspired computing hardware with potential advantages of high endurance and controllability.
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- 2021
264. Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain.
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Juszyński, P., Gryglas-Borysiewicz, M., Szczytko, J., Tokarczyk, M., Kowalski, G., Sadowski, J., and Wasik, D.
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- *
ANISOTROPY , *MAGNETIC materials , *EPITAXY , *STRAINS & stresses (Mechanics) , *TENSILE strength - Abstract
Magnetic properties of 20 nm thick (Ga,Mn)As layer deposited on (Ga,In)As buffer with very large epitaxial tensile strain are investigated. Ga 1− x In x As buffer with x =30% provides a 2% lattice mismatch, which is an important extension of the mismatch range studied so far (up to 0.5%). Evolution of magnetic anisotropy as a function of temperature is determined by magnetotransport measurements. Additionally, results of direct measurements of magnetization are shown. [ABSTRACT FROM AUTHOR]
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- 2015
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265. Electronic structure and magnetism of new ilmenite compounds for spintronic devices: FeBO3 (B = Ti, Hf, Zr, Si, Ge, Sn).
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Ribeiro, R.A.P., Jr.Camilo, A., and de Lazaro, S.R.
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IRON compounds , *ELECTRONIC structure , *MAGNETISM , *ILMENITE , *SPINTRONICS , *DENSITY functional theory - Abstract
First-principles calculations were performed in the framework of Density Functional Theory (DFT) within hybrid functional (B3LYP) to study the electronic structure and magnetic properties of new ilmenite FeBO 3 (B=Ti, Hf, Zr, Si, Ge, Sn) materials. In particular, the magnetic exchange interaction between Fe 2+ layers is dependent on the interlayer distance and it can be controlled by ionic radius of B-site cation. Thus, Fe(Ti, Si, Ge)O 3 are antiferromagnetic materials, while Fe(Zr, Hf, Sn)O 3 are ferromagnetic. We also argue that antiferromagnetic materials and FeZrO 3 are convectional semiconductors, whereas FeHfO 3 and FeSnO 3 exhibit intrinsic half-metallic behavior, making them promising candidates for spintronic devices. [ABSTRACT FROM AUTHOR]
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- 2015
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266. Electronic structure and magnetic properties of quaternary Heusler alloys CoRhMnZ (Z = Al, Ga, Ge and Si) via first-principle calculations.
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Benkabou, M., Rached, H., Abdellaoui, A., Rached, D., Khenata, R., Elahmar, M.H., Abidri, B., Benkhettou, N., and Bin-Omran, S.
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- *
CHROMIUM-cobalt-nickel-molybdenum alloys , *MAGNETIC properties of Heusler alloys , *COBALT compounds , *ELECTRONIC structure , *FERROMAGNETIC materials , *APPROXIMATION theory - Abstract
First-principle calculations are performed to predict the electronic structure and elastic and magnetic properties of CoRhMnZ (Z = Al, Ga, Ge and Si) Heusler alloys. The calculations employ the full-potential linearized augmented plane wave. The exchange-correlations are treated within the generalized gradient approximation of Perdew–Burke and Ernzerhof (GGA-PBE). The electronic structure calculations show that these compounds exhibit a gap in the minority states band and are clearly half-metallic ferromagnets, with the exception of the CoRhMnAl and CoRhMnGa, which are simple ferromagnets that are nearly half metallic in nature. The CoRhMnGe and CoRhMnSi compounds and their magnetic moments are in reasonable agreement with the Slater-Pauling rule, which indicates the half metallicity and high spin polarization for these compounds. At the pressure transitions, these compounds undergo a structural phase transition from the Y-type I → Y-type II phase. We have determined the elastic constants C 11 , C 12 and C 44 and their pressure dependence, which have not previously been established experimentally or theoretically. [ABSTRACT FROM AUTHOR]
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- 2015
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267. The electronic, magnetic and optical properties of Cr-doped MC (M=Si, Ge and Sn): A density functional theory approach.
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Rostami, Mohammad, Moradi, Mahmood, Javdani, Zohre, and Salehi, Hamdollah
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DENSITY functional theory , *OPTICAL properties , *DOPING agents (Chemistry) , *SPINTRONICS , *OPTICAL devices , *CHROMIUM compounds - Abstract
The electronic, magnetic and optical properties of Cr-doped MC (M=Si, Ge and Sn) are investigated in the framework of density functional theory. The results of our calculations in mBJ-GGA approximation show that all of these compounds are half-metallic ferromagnets with a magnetic moment of 2 µ β per supercell. We find that all of these materials have high spin-flip gaps, and they can preserve their half-metallicity up to high lattice compressions, therefore, they could be used in spintronic devices. The optical properties of pure and doped MC semiconductors such as dielectric function, absorption and reflectivity are also considered. It is found that the Cr-doped semiconductors can be used in optical devices in larger ranges of frequencies than the corresponding undoped ones. [ABSTRACT FROM AUTHOR]
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- 2015
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268. Dynamics of the incorporation of Co into the wurtzite ZnO matrix and its magnetic properties.
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Mesquita, A., Rhodes, F.P., da Silva, R.T., Neves, P.P., de Zevallos, A.O., Andreeta, M.R.B., Jr.de Lima, M.M., Cantarero, A., da Silva, I.S., Boselli, M.A., Gratens, X., Chitta, V.A., Doriguetto, A.C., Ferraz, W.B., Sabioni, A.C.S., and de Carvalho, H.B.
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COBALT , *ZINC oxide , *MAGNETIC properties of metals , *MICROSTRUCTURE , *DOPING agents (Chemistry) , *SOLUBILITY - Abstract
Bulk Co-doped ZnO (Zn 1− x Co x O) samples were prepared and studied with particular emphasis on their compositions, structures, and magnetic properties. A detailed microstructural analysis was conducted to investigate the nature of Co incorporation into the wurtzite ZnO matrix. The Zn 1− x Co x O ceramic samples were prepared using the standard solid-state reaction method with different Co molar concentrations of up to 30%. A Co solubility limit of approximately 23% was determined. For samples with Co concentrations greater than 23%, a segregated phase identified as Zn-doped CoO (Co 1− y Zn y O with y = 0.23) was observed. The magnetic characterization for the single-phase samples revealed a paramagnetic behavior with antiferromagnetic coupling of Co 2+ ions within the ZnO matrix. In order to get more insight about the magnetic results Monte Carlo simulations were conducted for different magnetic couplings and different Co distributions over the volume of the samples. We discussed the observed magnetic behavior of our samples by considering the main theories regarding the magnetic properties of dilute magnetic oxides. An inhomogeneous distribution of Co ions within the grains was inferred from the microstructural and magnetic characterization. [ABSTRACT FROM AUTHOR]
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- 2015
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269. Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop.
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Windbacher, Thomas, Makarov, Alexander, Sverdlov, Viktor, and Selberherr, Siegfried
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MAGNETIZATION , *FLIP-flop circuits , *GAUSSIAN distribution , *MAGNETISM , *CONTINUOUS distributions - Abstract
Recently, we proposed an alternative non-volatile magnetic flip flop which allows high integration density. This work extends the up to now gained results to the devices’ functionality under statistically distributed magnetization variations of its free layer. Assuming position uncorrelated random fluctuations in the free layer, that the variations are fixed with respect to time, and that small deviations from its mean are more likely than big ones, a Gaussian distribution was chosen to model the random fluctuations. The random variations were added to the simulations as a position dependent Zeeman term and their influence was varied by changing the variance of the distribution scaled in percent of the free layers saturation magnetization. The results with and without thermal excitation show that the flip flop is capable of operating under high free layer field variations. [ABSTRACT FROM AUTHOR]
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- 2015
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270. Estudo da característica estrutural e morfológica do semicondutor magnético diluído dopado com 0,15 e 0,25 mols de Ni2+ sintetizado por reação de combustão.
- Author
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Morais, A., Torquato, R. A., and Costa, A. C. F. M.
- Abstract
Copyright of Revista Eletrônica de Materiais e Processos is the property of Revista Eletronica de Materiaia e Processos and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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- 2015
271. Mn–Ge nanocluster formation vs. diluted magnetic semiconductuor formation.
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Portavoce, A., Abbes, O., Spiesser, A., Girardeaux, C., Michez, L., and Le Thanh, V.
- Subjects
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MAGNESIUM , *GALLIUM , *DILUTED magnetic semiconductors , *NANOFABRICATION , *SPINTRONICS , *BINARY metallic systems - Abstract
The possible fabrication of spintronic devices based on the Mn–Ge binary system supports extensive investigations on the magnetic properties of Mn–Ge structures. However, the global magnetic signal of a given sample is sometime complex due to the coexistence of several objects of unknown magnetic properties. We report the existence of ferromagnetic Mn–Ge nanoclusters (2–4 nm) containing only 4–6% Mn with a Curie temperature of ∼43.5 K, usually attributed to an 1.2% Mn-rich diluted magnetic semiconductuor. [ABSTRACT FROM AUTHOR]
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- 2015
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272. Theoretical investigations of an influence of Ti on electronic structure and magnetic properties of half-metallic Fe2Mn1−xTixSi0.5Al0.5 alloys.
- Author
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Go, Anna
- Subjects
- *
TITANIUM compounds , *ELECTRONIC structure , *IRON-manganese alloys , *MAGNETIC properties of metals , *NUMERICAL calculations - Abstract
Ab-initio electronic structure calculations are carried out for quinternary Fe 2 Mn 1− x Ti x Si 0.5 Al 0.5 alloys basing on the density functional theory. When x =0, the alloy is a half-metallic ferromagnet with magnetic moment following the Slater–Pauling rule. Main carrier of magnetism of the alloy is manganese with the magnetic moment of about 2.5 μ B . Replacement of Mn by Ti, changes its electronic and magnetic structure. Half-metallicity is present up to Ti concentration x =0.375. However, the further increase of Ti content leads to a strong decrease of electronic spin polarization. When the concentration of Ti increases, total magnetic moment strongly decreases. Fe magnetic moment, in the presence of titanium, changes its orientation into antiparallel in respect to the total magnetic moment and its absolute value increases with increasing Ti content. However, absolute value of Fe magnetic moment does not exceed 0.17 μ B . Ti exhibits very weak spin polarization with magnetic moment not higher than 0.05 μ B . [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF
273. High Curie temperature in halfmetallic ferromagnets (Zn, Cr, Ti)Se and (Zn, Cr, Ti)Te for spintronic devices : Ab initio and Monte Carlo treatments
- Author
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Bouziani, I, Benhouria, Y., Essaoudi, I, Ainane, A., Ahuja, Rajeev, Bouziani, I, Benhouria, Y., Essaoudi, I, Ainane, A., and Ahuja, Rajeev
- Abstract
The current study is purposed to investigate the magnetic- and electronic-properties of Zn1-2xCrxTixSe and Zn1-2xCrxTixTe systems by means of Ab initio and Monte Carlo calculations. We have predicted that the two systems show ferromagnetic halfmetallic behavior with 100% spin polarization at the Fermi level and their ferromagnetic stability is attributed to the double exchange coupling. Our calculations suggest further that these compounds exhibit a 2nd order ferromagnetic transition with high Curie temperature. Thus, (Zn, Cr, Ti)Se and (Zn, Cr, Ti)Te compounds are strong candidates for spintronic devices, especially for magnetic random access memories (MRAM) based on the spin transfer torque.
- Published
- 2020
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274. Electronic Nano-device Fabrications and Measurements
- Author
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Ren, Haowen, Fullerton, Eric E. F.1, Ren, Haowen, Ren, Haowen, Fullerton, Eric E. F.1, and Ren, Haowen
- Abstract
The first part of this dissertation mainly focus on thin film solid oxide fuel cells. In recent years, solid oxide fuel cells are becoming more popular as a green energy source of electricity due to their high efficiency and low carbon emission. However, high operation temperature and materials costs are the main issues impeding the application of this technique. In this presentation, by applying magnetron sputtering technique to fabricate thin film solid oxide fuel cell, we are able to operate the cells under much lower temperature with superior performance under hydrogen or hydrocarbon fuels. Different composite nano-porous cathodes and anodes are fabricated and characterized, all showing reliable, reproducible and scalable results. The second part of the dissertation focus on fabrication and characterizations of spintronic devices, including Si-doped single crystalline Ni nanowires, spin-triplet spintronic and SOT-MRAM devices. Spintronics has been widely applied in data storage applications such as hard disk drives, STT-MRAMs, and SOT-MRAMs, etc. Recently, development of spintronics theories and experiments has allowed it to expand to broader applications, such as domain wall MRAMs, neuromorphic computing and quantum computing. In this section, we will introduce the growth of Si-doped single crystalline Ni nanowires, the effects from AMR, OMR and domain wall MR at low magnetic fields and electron-magnon interaction at high magnetic fields. We studied superconducting triplet spin valve devices. In general, singlet Cooper pairs generated from superconducting layers cannot survive in magnetic layer. However, if we introduce an inhomogeneous moments between these two layers, triplets Cooper pair appeared and can survive much longer than singlet Cooper pair in ferromagnetic materials. In our study, we fabricated epitaxial Ni and Co superconducting spin-triplet spin valves to study this effect. By rotating the soft NiFe layer to break the linearity of magnetizations
- Published
- 2020
275. Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing
- Author
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Longo, E, Wiemer, C, Cecchini, R, Longo, M, Lamperti, A, Khanas, A, Zenkevich, A, Cantoni, M, Rinaldi, C, Fanciulli, M, Mantovan, R, Longo, Emanuele, Wiemer, Claudia, Cecchini, Raimondo, Longo, Massimo, Lamperti, Alessio, Khanas, Anton, Zenkevich, Andrei, Cantoni, Matteo, Rinaldi, Christian, Fanciulli, Marco, Mantovan, Roberto, Longo, E, Wiemer, C, Cecchini, R, Longo, M, Lamperti, A, Khanas, A, Zenkevich, A, Cantoni, M, Rinaldi, C, Fanciulli, M, Mantovan, R, Longo, Emanuele, Wiemer, Claudia, Cecchini, Raimondo, Longo, Massimo, Lamperti, Alessio, Khanas, Anton, Zenkevich, Andrei, Cantoni, Matteo, Rinaldi, Christian, Fanciulli, Marco, and Mantovan, Roberto
- Abstract
When coupled with ferromagnetic layers (FM), topological insulators (TI) are expected to boost the charge‐to‐spin conversion efficiency across the FM/TI interface. In this context, a thorough control and optimization of the FM/TI interface quality are requested. Here, the evolution of the chemical, structural, and magnetic properties of the Fe/Sb2Te3 heterostructure is presented as a function of a rapid mild thermal annealing conducted on the Sb2Te3‐TI (up to 200 °C). While the bilayer is not subjected to any thermal treatment upon Fe deposition, the annealing of Sb2Te3 markedly improves its crystalline quality, leading to an increase in the fraction of ferromagnetic Fe atoms at the buried Fe/Sb2Te3 interface and a slight lowering of the magnetic coercivity of the Fe layer. The method is an efficient tool to clean up the Fe/Sb2Te3 interface, which may be extended to different FM/TI heterostructures. Simultaneously to the interface reconstruction, a constant ≈20% fraction of FeTe develops at the interface. Since FeTe can display superconductivity, the Fe/Sb2Te3 system could have potentialities for exploiting phenomena at the edge of magnetism, superconductivity and topology.
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- 2020
276. ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3
- Author
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Longo, E, Mantovan, R, Cecchini, R, Overbeek, M, Longo, M, Trevisi, G, Lazzarini, L, Tallarida, G, Fanciulli, M, Winter, C, Wiemer, C, Overbeek, MD, Winter, CH, Longo, E, Mantovan, R, Cecchini, R, Overbeek, M, Longo, M, Trevisi, G, Lazzarini, L, Tallarida, G, Fanciulli, M, Winter, C, Wiemer, C, Overbeek, MD, and Winter, CH
- Abstract
Taking the full advantage of the conformal growth characterizing atomic layer deposition (ALD), the possibility to grow Co thin films, with thickness from several tens down to few nanometers on top of a granular topological insulator (TI) Sb2Te3 film, exhibiting a quite high surface roughness (2–5 nm), was demonstrated. To study the Co growth on the Sb2Te3 substrate, we performed simultaneous Co depositions also on sputtered Pt substrates for comparison. We conducted a thorough chemical-structural characterization of the Co/Sb2Te3 and Co/Pt heterostructures, confirming for both cases, not only an excellent conformality, but also the structural continuity of the Co layers. X-ray diffraction (XRD) and high-resolution transmission electron microscope (HRTEM) analyses evidenced that Co on Sb2Te3 grows preferentially oriented along the [00l] direction, following the underlying rhombohedric substrate. Differently, Co crystallizes in a cubic phase oriented along the [111] direction when deposited on Pt. This work shows that, in case of deposition of crystalline materials, the ALD surface selectivity and conformality can be extended to the definition of local epitaxy, where in-plane ordering of the crystal structure and mosaicity of the developed crystallized grains are dictated by the underlying substrate. Moreover, a highly sharp and chemically-pure Co/Sb2Te3 interface was evidenced, which is promising for the application of this growth process for spintronics. [Figure not available: see fulltext.].
- Published
- 2020
277. Backhopping in magnetic tunnel junctions: Micromagnetic approach and experiment.
- Author
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Frankowski, Marek, Skowroński, Witold, Czapkiewicz, Maciej, and Stobiecki, Tomasz
- Subjects
- *
MAGNETIC tunnelling , *MAGNETIZATION , *TUNNEL junctions (Materials science) , *COUPLING reactions (Chemistry) , *THICKNESS measurement - Abstract
Micromagnetic simulations of Current Induced Magnetization Switching (CIMS) loops in CoFeB/MgO/CoFeB exchange-biased Magnetic Tunnel Junctions (MTJ) are discussed. Our model uses the Landau–Lifshitz–Gilbert equation with the Slonczewski׳s Spin-Transfer-Torque (STT) component. The current density for STT is calculated from the applied bias voltage and tunnel magnetoresistance which depends on the local magnetization vectors arrangement. We take into account the change in the anti-parallel state resistance with increasing bias voltage. Using such model we investigate influence of the interlayer exchange coupling, between free and reference layers across the barrier, on the backhopping effect in anti-parallel to parallel switching. We compare our simulated CIMS loops with the experimental data obtained from MTJs with different MgO barrier thicknesses. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF
278. Interface induced manipulation of perpendicular exchange bias in Pt/Co/(Pt,Cr)/CoO thin films.
- Author
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Akdoğan, N., Yağmur, A., Öztürk, M., Demirci, E., Öztürk, O., and Erkovan, M.
- Subjects
- *
COBALT oxides , *INTERFACES (Physical sciences) , *PLATINUM compounds , *METALLIC thin films , *FERROMAGNETIC materials , *EFFECT of temperature on metals - Abstract
Perpendicular exchange bias has been manipulated by changing ferromagnetic film thickness and spacer layer in Pt/Co/(Pt,Cr)/CoO thin films. The exchange bias characteristics, blocking temperature, and magnetization of thin films strongly depend on the spacer layer (Pt,Cr) between ferromagnetic and antiferromagnetic layers. While Pt/Co/Pt/CoO thin films show perpendicular exchange bias, Pt/Co/Cr/CoO has exchange bias with easy magnetization axis in the film plane. We have also observed very small hysteretic behavior from the hard axis magnetization curve of Pt/Co/Cr/CoO film. This can be attributed to misalignment of the sample or small perpendicular contribution from Pt/Co bottom interface. We have also investigated the temperature and spacer layer dependent exchange bias properties of the samples. We observed higher H EB and H C for the thicker Co layer in the Pt/Co/Pt/CoO sample. In addition, onset of exchange bias effect starts at much lower temperatures for Pt/Co/Cr/CoO thin film. This clearly shows that Cr spacer layer not only removes the perpendicular exchange bias, but also reduces the exchange interaction between Co and CoO and thus lowers the T B . [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF
279. Prediction of electronic and half metallic properties of Mn_2YSn (Y = Mo, Nb, Zr) Heusler alloys
- Author
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L. Zekri, N. Zekri, M. Sayah, M. Mokhtari, F. Dahmane, R. Khenata, and S. Zeffane
- Subjects
Materials science ,magnetic moment ,Physics and Astronomy (miscellaneous) ,half metallic ,FOS: Physical sciences ,02 engineering and technology ,Type (model theory) ,Condensed Matter - Soft Condensed Matter ,01 natural sciences ,Spin magnetic moment ,symbols.namesake ,Lattice constant ,0103 physical sciences ,010306 general physics ,spintronic ,Condensed Matter - Materials Science ,Condensed matter physics ,Magnetic moment ,Spin polarization ,Spintronics ,Fermi level ,Materials Science (cond-mat.mtrl-sci) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,lcsh:QC1-999 ,heusler ,symbols ,Soft Condensed Matter (cond-mat.soft) ,Density functional theory ,0210 nano-technology ,lcsh:Physics - Abstract
We investigate the structural, electronic and magnetic properties of the full Heusler compounds Mn$_2$YSn (Y = Mo, Nb, Zr) by first-principles density functional theory using the generalized gradient approximation. It is found that the calculated lattice constants are in good agreement with the theoretical values. We observe that the Cu$_2$MnAl-type structure is more stable than the Hg$_2$CuTi type. The calculated total magnetic moments of Mn$_2$NbSn and Mn$_2$ZrSn are 1 $\mu_{\text{B}}$ and 2 $\mu_{\text{B}}$ at the equilibrium lattice constant of 6.18 \AA and 6.31 \AA, respectively, for the Cu$_2$MnAl-type structure. Mn$_2$MoSn have a metallic character in both Hg$_2$CuTi and Cu$_2$MnAl type structures. The total spin magnetic moment obeys the Slater-Pauling rule. Half-metal exhibits 100% spin polarization at the Fermi level. Thus, these alloys are promising magnetic candidates in spintronic devices., Comment: 9 pages, 3 figures, 2 tables
- Published
- 2021
280. Voltage-controlled ON−OFF ferromagnetism at room temperature in a single metal oxide film
- Author
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Christophe Detavernier, Andreas Wagner, Sònia Estradé, Veronica Sireus, Maik Butterling, Dustin A. Gilbert, Enric Menéndez, Peyton D. Murray, Francesca Peiró, Jolien Dendooven, Josep Nogués, Maciej Oskar Liedke, Pau Torruella, Jordi Sort, Eva Pellicer, Kai Liu, Alberto Manuel Quintana, Agencia Estatal de Investigación (España), European Research Council, Generalitat de Catalunya, Ministerio de Ciencia, Innovación y Universidades (España), Ministerio de Economía y Competitividad (España), European Commission, National Science Foundation (US), Quintana, Alberto, Menéndez, Enric, Dendooven, Jolien, Murray, Peyton D., Gilbert, Dustin A., Liu, Kai, Pellicer, Eva, Sort, Jordi, Quintana, Alberto [0000-0002-9813-735X], Menéndez, Enric [0000-0003-3809-2863], Dendooven, Jolien [0000-0002-2385-3693], Murray, Peyton D. [0000-0003-0389-0611], Gilbert, Dustin A. [0000-0003-3747-3883], Liu, Kai [0000-0001-9413-6782], Pellicer, Eva [0000-0002-8901-0998], and Sort, Jordi [0000-0003-1213-3639]
- Subjects
magnetic phase transition ,Materials science ,on-off ferromagnetism ,Magnetism ,Voltage control of magnetism ,Oxide ,General Physics and Astronomy ,02 engineering and technology ,010402 general chemistry ,7. Clean energy ,01 natural sciences ,chemistry.chemical_compound ,Paramagnetism ,Co3O4 ,Electrolyte ,MD Multidisciplinary ,General Materials Science ,Multiferroics ,Nanoscience & Nanotechnology ,spintronic ,Spintronics ,business.industry ,Ion migration ,On−off ferromagnetism ,ionic transport ,positron annihilation ,General Engineering ,Heterojunction ,Magnetostriction ,021001 nanoscience & nanotechnology ,electric field ,3. Good health ,0104 chemical sciences ,chemistry ,Ferromagnetism ,Optoelectronics ,0210 nano-technology ,business ,Magneto-ionics - Abstract
Electric-field-controlled magnetism can boost energy efficiency in widespread applications. However, technologically, this effect is facing important challenges: mechanical failure in strain-mediated piezoelectric/magnetostrictive devices, dearth of room-temperature multiferroics, or stringent thickness limitations in electrically charged metallic films. Voltage-driven ionic motion (magneto-ionics) circumvents most of these drawbacks while exhibiting interesting magnetoelectric phenomena. Nevertheless, magneto-ionics typically requires heat treatments and multicomponent heterostructures. Here we report on the electrolyte-gated and defect-mediated O and Co transport in a Co3O4 single layer which allows for room-temperature voltage-controlled ON-OFF ferromagnetism (magnetic switch) via internal reduction/oxidation processes. Negative voltages partially reduce Co3O4 to Co (ferromagnetism: ON), resulting in graded films including Co- and O-rich areas. Positive bias oxidizes Co back to Co3O4 (paramagnetism: OFF). This electric-field-induced atomic-scale reconfiguration process is compositionally, structurally, and magnetically reversible and self-sustained, since no oxygen source other than the Co3O4 itself is required. This process could lead to electric-field-controlled device concepts for spintronics., Financial support by the European Research Council (SPINPORICS 2014-Consolidator Grant, Agreement No. 648454), the Spanish Government (Projects MAT2017-86357-C3-1-R and associated FEDER), the Generalitat de Catalunya (2017-SGR-292) and the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No. 665919 is acknowledged. E.P. is grateful to MINECO for the “Ramon y Cajal” contract (RYC-2012-10839). The ICN2 is funded by the CERCA programme/Generalitat de Catalunya. ICN2 also acknowledges the support from the Severo Ochoa Program (MINECO, Grant SEV-2013-0295). Work at UCD is supported by the US NSF (DMR1610060 and ECCS-1611424).
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- 2021
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281. Exchange-field-controllable 0-? transition in asymmetric Josephson spin-valve heterostructure
- Author
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Wachiraporn Choopan
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Critical current ,Ferromagnet ,Spintronic ,Josephson junction ,Electronic switching - Abstract
Naresuan University Journal: Science and Technology, 29, 2, 96-105
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- 2021
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282. Mesoscopic magnetic systems: from fundamental properties to devices
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Salvador Pané, Paolo Vavassori, Dirk Grundler, Christopher H. Marrows, Laura J. Heyderman, Denys Makarov, and Julie Grollier
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spin valve ,Materials science ,Physics and Astronomy (miscellaneous) ,Spin valve ,FOS: Physical sciences ,neuromorphic ,Applied Physics (physics.app-ph) ,Spin wave ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Computer Science::General Literature ,mesoscopic magnetism ,spintronic ,plasmonic ,nanomachine ,Mesoscopic physics ,Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed matter physics ,Spintronics ,Skyrmion ,Physics - Applied Physics ,spin ice ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,magnetic tunnel junction ,magnonic ,Spin ice ,Tunnel magnetoresistance ,skyrmion ,Neuromorphic engineering ,nanomagnetism ,artificial crystal ,spin wave - Abstract
Here we review various themes of current research within mesoscopic magnetic systems., Comment: APL Special Topic Guest Editorial
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- 2021
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283. DFT based investigation of the structural, magnetic, electronic, and half-metallic properties of solid In$_{1-x}$Ti$_{x}$Sb solutions
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S. Amrani, M. Berber, and M. Mebrek
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Condensed Matter - Materials Science ,Physics and Astronomy (miscellaneous) ,Physics ,QC1-999 ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,Condensed Matter Physics ,dft ,electronic structures ,fplaw ,half-metallic ,ferromagnetic ,tb-mbj ,spintronic - Abstract
With the intention to reveal the effect of the substitution, Ti-doped InSb alloy, we accomplished a first-principles prediction within the FPLAPW+lo method. We used GGA-PBEsol scheme attached with the improved TB-mBJ approach to predict structural, electronic, and magnetic properties of In$_{1-x}$Ti$_{x}$Sb with concentration $x = 0$, $0.125$, $0.25$, $0.50$, $0.75$, $0.875$, and $1$. Our lattice parameters are found in favorable agreement with the available theoretical and experimental data. The calculation shows that all structures are energetically stable. The substitutional doping transforms the ionic character of the InSb compound in half-metallic ferromagnetic comportment for concentration $x = 0$, $0.125$, $0.25$, and $0.50$, with a spin polarization of $100$% at the Fermi level, and metallic nature for In$_{0.25}$Ti$_{0.75}$Sb and In$_{0.125}$Ti$_{0.875}$Sb. The total magnetic moments are also estimated at about 1 $\mu_{\text{B}}$. In$_{0.875}$Ti$_{0.125}$Sb, In$_{0.75}$Ti$_{0.25}$Sb, and In$_{0.50}$Ti$_{0.50}$Sb have half-metallic ferromagnets comportment and they can be upcoming applicants for spintronics applications., Comment: 13 pages, 17 figures, 3 tables
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- 2021
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284. Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning
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Bell, G
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- 2012
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285. First-principles prediction of structural, electronic, magnetic and optical properties of ErN and TmN in the hexagonal structure.
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Belhachi, S.
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OPTICAL properties , *MAGNETIC properties , *BAND gaps , *DIELECTRIC function , *OPTICAL computing , *MOSSBAUER spectroscopy , *PLANE wavefronts - Abstract
The objective of this work is to study theoretically the structural, electronic, magnetic, and optical characteristics of ErN and TmN in the hexagonal structure for the first time. In order to help understanding and provide a thorough description of physicals properties of ErN and TmN compounds, we employ one of the most accurate approaches (Full-potential linearized augmented plane wave (FP-LAPW+lo) in this study, and to assess the correlation of local electrons, the LSDA+U (U is the onsite Coulomb energy) type calculation is frequently used. This theoretical result indicates that these materials (ErN and TmN) are found to be ferromagnetic semiconductors, and have an indirect band gap of 2.31 eV and 2.24 eV respectively with a total magnetic moment of 3.00 µ B and 1.99 µ B for ErN and TmN respectively. This study computes and discusses optical features such as dielectric function, refraction coefficient, and extinction coefficient. [ABSTRACT FROM AUTHOR]
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- 2022
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286. Influence of oxygen vacancies on the ferromagnetism in Co-doped ZnO: An ab-initio study.
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Galindez, E.F., Mendoza-Estrada, V., González-García, A., López-Pérez, W., González-Hernández, R., and Dussan, A.
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- *
DILUTED magnetic semiconductors , *MAGNETIC moments , *ZINC oxide , *CURIE temperature , *MAGNETIC properties , *FERROMAGNETISM - Abstract
Electronic and magnetic properties of cobalt doped ZnO, with and without O vacancies, were investigated using a b - i n i t i o calculations. Calculation shows that Co-doped ZnO can achieve different magnetic stable configurations as dependent on oxygen vacancy (V O) concentrations. The electronic structure illustrates that when there are V O in the structure, the ferromagnetic phase is the most stable configuration with the highest Curie temperature. Also, DOS and pDOS show that the total magnetic moment mainly consists of interaction between Co, V O , and O atoms, where the largest contributions come from the d -Co and p -O orbitals. The magnetization per Co atom shows a strong correlation with the formation energy decrease, which increases with the impurity-vacancy distance. Finally, the presence of V O results in a lower average magnetic moment per unit cell, which was also observed in the spatial spin-density distribution. These results indicate that V O in Co-doped ZnO could be the crucial key to achieve stable ferromagnetism in this diluted magnetic semiconductor with potential applications in spintronic devices. • Stabilization of room temperature has a dependence on oxygen vacancy concentration. • Oxygen vacancies in the cell result in a lower average magnetic moment per Cobalt. • There is an antiferromagnetic interaction zone around oxygen atoms and vacancies. • Ferromagnetic phase is the most stable configuration with the highest Curie temperature. [ABSTRACT FROM AUTHOR]
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- 2022
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287. Fe3O4 thin films epitaxially growth model on TiO2-terminated SrTiO3(100).
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Cheng, Bin, Liu, Xing, and Hu, Jifan
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IRON oxides , *THIN films , *ELECTRIC properties , *EPITAXY - Abstract
The advanced interface of Fe 3 O 4 /SrTiO 3 , popular in spintronic, has attracted considerable attention. Some experiments have given controversial results on the structure at the Fe 3 O 4 /SrTiO 3 (100) interface. One opinion suggests the formation of interfacial antiferromagnetic FeO layers, while another opinion suggests that are γ-Fe 2 O 3 layers. Here, we propose a theoretical model that what kind of iron oxide stacking sequence forming on the substrate depends on the substrate termination charge. We give a tentative and easy-to-understand growth model for epitaxy, which agrees with the opinion of γ-Fe 2 O 3 layers formation at the Fe 3 O 4 /SrTiO 3 (100) interface. This theoretical model agrees well with the experimental curve and gives a prediction for the different Fe ions concentration depending on thickness. The calculation results of the Fe ions concentration adjacent to the substrate surface show that there are almost no B-site Fe ions at the interface. It indicates that there are unusual electric and magnetic properties at interface. Our growth model illustrates that the possible magnetically dead layer at the interface is responsible for the decrease of the magnetization in the thin films. • This growth mode give credit to the results of interfacial ferrimagnetic γ-Fe 2 O 3 layer in Fe 3 O 4 /SrTiO 3 (100). • The model curve agrees with the experimental curve, gives prediction for the Fe ions concentration depending on thickness. • There are almost no B-site Fe at interface. There exists possible magnetically dead layer at the interface. • The growth mode and the oxidation level are determined by the TiO 2 -termination charge. • The magnetite film grown on SrTiO 3 (001) exhibiting vertical compressive and lateral tensile strain has been explained. [ABSTRACT FROM AUTHOR]
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- 2022
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288. Modulating spintronic properties of Nitrogen passivated borophene nanoribbons.
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Vatankhahan, Adeleh and Movlarooy, Tayebeh
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GREEN'S functions , *NANORIBBONS , *DENSITY functional theory , *CURIE temperature , *FERROMAGNETIC materials - Abstract
• Modulating Spintronic properties of Nitrogen passivated borophene Nanoribbons. • Stability, magnetic, and transport features of zigzag borophene nanoribbons (ZBNRs) • Calculations done using non-equilibrium Green's function and density functional theory. • The stability of the nanoribbon increases by passivating the edges. • The magnetic features of borophene nanoribbon are affected by the hanging bond of the edges. • The Curie temperature for N passivated on both edges of ZBNR is higher than 6000 K. We investigate the stability, magnetic, and transport features of pristine zigzag borophene nanoribbons (ZBNRs) and those edge-passivated by H and N atoms. The calculations were performed using non-equilibrium Green's function and density functional theory approach. Our main focus is to study the transport properties of N-passivated ZBNRs. The results show that the stability of the nanoribbon increases by passivating the edges. The magnetic features of borophene nanoribbon are affected by the hanging bond of the edges. Hydrogenation can remove the magnetism on the edge, but the passivation by N atoms can increase the magnetic properties. It is revealed that the Nitrogenation causes the negative differential resistance (NDR) phenomenon and 65% spin filtering effect. The estimated Curie temperature for N atom passivated on both edges of ZBNR (NN-ZBNR) is higher than 6000 K, indicating that NN-ZBNR may be good room-temperature ferromagnetic material for spintronic applications in the future. [ABSTRACT FROM AUTHOR]
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- 2022
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289. Magnetic, Optoelectronic, and Thermodynamic Properties of Sr2CrXO6 (X = La and Y): Half-Metallic and Ferromagnetic Behavior
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Haid, Slimane, Bouadjemi, Bouabdellah, Bentata, Samir, Lantri, Tayeb, Çoruh, Ali, Zitouni, Ali, Bouhafs, Bachir, and Aziz, Zoubir
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- 2018
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290. Ab Initio Study of Electronic, Magnetic, and Thermoelectric Response of ZTi2O4 (Z = Mg, Zn, and Cd) Through mBJ Potential
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Yousaf, M., Mahmood, Q., Hassan, M., Rashid, M., and Laref, A.
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- 2018
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291. Search for New Half-Metallic Ferromagnets in Quaternary Diamond-Like Compounds I–II2–III–VI4 and I2–II–IV–VI4 (I = Cu; II = Mn, Fe, Co; III = In; IV = Ge, Sn; VI = S, Se, Te)
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Berri, Saadi
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- 2018
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292. Electronic structures at Magnetic Tunnel Junction interfaces: EELS experiments and FEFF calculations
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March, K., Imhoff, D., Krill, G., Colliex, C., Richter, Silvia, editor, and Schwedt, Alexander, editor
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- 2008
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293. High blocking temperature in SnO2 based super-paramagnetic diluted magnetic semiconductor.
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Mounkachi, O., Salmani, E., El Moussaoui, H., Masrour, R., Hamedoun, M., Ez-Zahraouy, H., Hlil, E. K., and Benyoussef, A.
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- *
STANNIC oxide , *HIGH temperature metallurgy , *PARAMAGNETIC materials , *DILUTED magnetic semiconductors , *DOPING agents (Chemistry) , *NANOCRYSTAL synthesis - Abstract
(Fe,Cu)-doped SnO2 nanocrystals was synthesized using the co-precipitation method. Magnetic Properties Measurement System (MPMS) revealed that for simple doping, Fe-doped SnO2 soft ferromagnetism at low temperature appears, while the ferromagnetic phase is stable at temperature higher than room temperature for Cu co-doping element. The ferromagnetism is significantly enhanced by the Cu addition to Fe-doped SnO2, according to the ZFC and FC magnetizations and the hysteresis loops. The evidences for the existence of superparamagnetism are characterized and high blocking temperature super-paramagnetism in (Fe,Cu)-doped SnO2 nanocrystals was observed. Based on first-principles calculations, we have investigated electronic structures and magnetic properties of Fe-doped SnO2 and (Fe,Cu)-doped SnO2 with and without defect with LDA and LDA-SIC approximations. The results suggest that the oxygen vacancies (VO) play a critical role in the activation of ferromagnetism in Fe doped SnO2. For (Fe,Cu)-doped SnO2 the results exhibit that Cu strongly influences on the magnetic properties of these doped systems which are in good agreement with the experimental observations. Electronic structure show that the presence of Cu promote the ferromagnetic bound magnetic polaron interaction through the carriers introduce by d (Cu). [ABSTRACT FROM AUTHOR]
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- 2014
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294. Fabrication and magnetic characterization of nanometer-sized ellipses of the ferromagnetic insulator EuS.
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Wolf, M. J., Sürgers, C., Fischer, G., Scherer, T., and Beckmann, D.
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MICROFABRICATION , *MAGNETIC properties of metals , *NANOSTRUCTURED materials , *FERROMAGNETISM , *ELECTRIC insulators & insulation , *SULFIDES analysis - Abstract
The magnetic properties of ferromagnetic elements can be tailored by making use of the shape anisotropy of finite-size systems. One material class of particular interest are ferromagnetic insulators, which can be used as spin filters for spintronics applications. Here we present a way to fabricate nanoscale ellipses of the ferromagnetic insulator europium sulfide (EuS) and investigate their magnetic properties. We observe a distinct influence of the magnetic field orientation on the shape of the magnetization curve. This could be used to separately control the individual magnetic elements of a magnetoresistive device using a ferromagnetic insulator. [ABSTRACT FROM AUTHOR]
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- 2014
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295. Etude théorique de l'anisotropie magnétique dans des systèmes hybrides pour la spintronique moléculaire
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Le Laurent, Ludovic, Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Groupe Modélisation et Théorie (GMT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Université Paris-Saclay, Cyrille Barreteau, STAR, ABES, Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Service de physique de l'état condensé (SPEC - UMR3680), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Spintronic ,Anisotropie ,Magnétisme ,Magnetism ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Anisotropy ,Spintronique ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] - Abstract
Magnetic anisotropy is a property of great importance both for applications (magnetic storage, ...) and for its fundamental interest. In this manuscript, we are more precisely interested in the computation of the magneto-crystalline anisotropy energy (MCA) that results from spin-orbit coupling. It is a delicate quantity to determine for several reasons : it is generally very small (of the order of meV per atom at most) and depends crucially on many physical and numerical parameters. In particular, it is strongly dependent on the symmetries of the system, the crystal lattice, but also on the nature of the materials, in this case the transition metals 3d. We are more particularly interested in magnetic thin films for which the MCA is calculated as the difference in system energy between a magnetization parallel to the surface of the material and a magnetization orthogonal to it. In particular, we use codes based on density functional theory (DFT, Quantum ESPRESSO and Quantum ATK) and a tight-binding code (TB). The MCA being obtained as an energy difference between two spin orientations using the force theorem. The objective of this PhD thesis is to understand and describe in detail the behavior of the MCA in magnetic thin films and the different ways to tune and modify (controllably or not) its magnitude. Thanks to our computational tools, we have extracted the main trends and highlighted the essential parameters that allow us to control the anisotropy. One of them is of particular interest, the hybridization of orbitals between a 3d transition metal and non-magnetic carbon atom, giving rise to important variations in anisotropy. Such systems are called hybrid-systems, and give us information on the transmission of magnetic properties (polarization, anisotropy) between neighboring atoms., L'anisotropie magnétique est une propriété de grande importance aussi bien pour les applications (stockage magnétiques, ...) que pour son intérêt fondamental. Dans ce manuscrit, nous nous intéressons plus précisément au calcul de l'énergie d'anisotropie magnéto-cristalline (MCA) qui est issue du couplage spin-orbite. C'est une grandeur délicate à déterminer pour plusieurs raisons : elle est en général très faible (de l'ordre du meV par atome au maximum) et elle dépend crucialement de nombreux paramètres physiques et numériques. Elle est notamment fortement dépendante des symétries du système, du réseau cristallin, mais aussi de la nature des matériaux, ici des métaux de transition 3d. Nous nous intéressons plus particulièrement à des couches minces magnétiques pour lesquelles la MCA est calculée comme étant la différence d'énergie du système entre une aimantation parallèle à la surface du matériau et une aimantation orthogonale à celle-ci. Nous utilisons en particulier des codes basés sur théorie de la fonctionnelle densité (DFT, Quantum ESPRESSO et Quantum ATK) et un code de liaisons fortes (TB). La MCA étant obtenue comme une différence d'énergie entre deux orientations de spin en utilisant le théorème de force. L'objectif de cette thèse de doctorat est de comprendre et de décrire en détails le comportement de la MCA dans des films minces magnétiques et les différentes manières de modifier de manière contrôlée (ou non) cette grandeur. Grâce à nos outils de calcul, nous avons extrait des grandes tendances et mis en évidence les paramètres essentiels qui permettent de piloter l'anisotropie. L'une d'entre elles retient particulièrement notre attention, l'hybridation d'orbitales entre un métal de transition 3d et un atome de carbone non-magnétique, donnant lieu d'importantes variations d'anisotropie. De tels systèmes sont dits hybrides, et nous renseignent sur les capacités de transmission du magnétisme (polarisation, anisotropie) entre atomes voisins.
- Published
- 2020
296. Theoretical study of magnetic anisotropy in hybrid systems for molecular spintronic
- Author
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Laurent, Ludovic Le, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Saclay, Cyrille Barreteau, and Le Laurent, Ludovic
- Subjects
[PHYS]Physics [physics] ,magnétisme ,magnetism ,anisotropy ,spintronic ,spintronique ,[PHYS] Physics [physics] ,anisotropie - Abstract
Magnetic anisotropy is a property ofgreat importance both for applications (magnetic storage,...) and for its fundamental interest. In this manuscript,we are more precisely interested in the computationof the magneto-crystalline anisotropy energy(MCA) that results from spin-orbit coupling. It is adelicate quantity to determine for several reasons : itis generally very small (of the order of meV per atomat most) and depends crucially on many physical andnumerical parameters. In particular, it is strongly dependenton the symmetries of the system, the crystallattice, but also on the nature of the materials, in thiscase the transition metals 3d. We are more particularlyinterested in magnetic thin films for which the MCA iscalculated as the difference in system energy betweena magnetization parallel to the surface of the materialand a magnetization orthogonal to it.In particular, we use codes based on density functionaltheory (DFT, Quantum ESPRESSO and Quantum ATK)and a tight-binding code (TB). The MCA being obtainedas an energy difference between two spin orientationsusing the force theorem. The objective of thisPhD thesis is to understand and describe in detail thebehavior of the MCA in magnetic thin films and the differentways to tune and modify (controllably or not) itsmagnitude. Thanks to our computational tools, we haveextracted the main trends and highlighted the essentialparameters that allow us to control the anisotropy. Oneof them is of particular interest, the hybridization of orbitalsbetween a 3d transition metal and non-magneticcarbon atom, giving rise to important variations in anisotropy.Such systems are called hybrid-systems, andgive us information on the transmission of magneticproperties (polarization, anisotropy) between neighboringatoms., L’anisotropie magnétique est une propriétéde grande importance aussi bien pour les applications(stockage magnétique, ...) que pour son intérêtfondamental. Dans ce manuscrit, nous nous intéressonsplus précisément au calcul de l’énergie d’anisotropiemagnéto-cristalline (MCA) qui est issue du couplagespin-orbite. C’est une grandeur délicate à déterminerpour plusieurs raisons : elle est en général très faible (del’ordre du meV par atome au maximum) et elle dépendcrucialement de nombreux paramètres physiques et numériques.Elle est notamment fortement dépendantedes symétries du système, du réseau cristallin, maisaussi de la nature des matériaux, ici des métaux detransition 3d. Nous nous intéressons plus particulièrementà des couches minces magnétiques pour lesquellesla MCA est calculée comme étant la différence d’énergiedu système entre une aimantation parallèle à la surfacedu matériau et une aimantation orthogonale à celle-ci.Nous utilisons en particulier des codes basés sur théoriede la fonctionnelle densité (DFT, Quantum ESPRESSOet Quantum ATK) et un code de liaisons fortes (TB).La MCA étant obtenue comme une différence d’énergieentre deux orientations de spin en utilisant le théorèmede force. L’objectif de cette thèse de doctorat est decomprendre et de décrire en détails le comportementde la MCA dans des films minces magnétiques et lesdifférentes manières de modifier de manière contrôlée(ou non) cette grandeur. Grâce à nos outils de calcul,nous avons extrait des grandes tendances et mis enévidence les paramètres essentiels qui permettent depiloter l’anisotropie. L’une d’entre elles retient particulièrementnotre attention, l’hybridation d’orbitalesentre un métal de transition 3d et un atome de carbonenon-magnétique, donnant lieu d’importantes variationsd’anisotropie. De tels systèmes sont dits hybrides, etnous renseignent sur les capacités de transmission dumagnétisme (polarisation, anisotropie) entre atomesvoisins.
- Published
- 2020
297. Phase Transition and Electronic Structures of All-d-Metal Heusler-Type X2MnTi Compounds (X = Pd, Pt, Ag, Au, Cu, and Ni)
- Author
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Feng Zhou, R. Khenata, Mengxin Wu, Xiaotian Wang, and Minquan Kuang
- Subjects
Phase transition ,Materials science ,02 engineering and technology ,Electronic structure ,01 natural sciences ,DFT ,lcsh:Chemistry ,Metal ,Tetragonal crystal system ,Phase (matter) ,0103 physical sciences ,spintronic ,Original Research ,010302 applied physics ,Spintronics ,General Chemistry ,021001 nanoscience & nanotechnology ,electronic structure ,Crystallography ,Chemistry ,lcsh:QD1-999 ,Ferromagnetism ,visual_art ,Density of states ,visual_art.visual_art_medium ,electronic properties ,Heusler alloys ,0210 nano-technology - Abstract
In this work, we investigated the phase transition and electronic structures of some newly designed all-d-metal Heusler compounds, X2MnTi (X = Pd, Pt, Ag, Au, Cu, and Ni), by means of the first principles. The competition between the XA and L21 structures of these materials was studied, and we found that X2MnTi favors to feature the L21-type structure, which is consistent with the well-known site-preference rule (SPR). Under the L21 structure, we have studied the most stable magnetic state of these materials, and we found that the ferromagnetic state is the most stable due to its lower energy. Through tetragonal deformation, we found that the L21 structure is no longer the most stable structure, and a more stable tetragonal L10 structure appeared. That is, under the tetragonal strain, the material enjoys a tetragonal phase transformation (i.e., from cubic L21 to tetragonal L10 structure). This mechanism of L21-L10 structure transition is discussed in detail based on the calculated density of states. Moreover, we found that the energy difference between the most stable phases of L10 and L21, defined as ΔEM (ΔEM = ECubic-ETetragonal), can be adjusted by the uniform strain. Finally, the phonon spectra of all tetragonal X2MnTi (X = Pd, Pt, Ag, Au, Cu, and Ni) phases are exhibited, which provides a powerful evidence for the stability of the tetragonal L10 state. We hope that our research can provide a theoretical guidance for future experimental investigations.
- Published
- 2020
298. Electronic structure and magnetic properties of the perovskite cerium manganese oxide from ab initio calculations.
- Author
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Berri, Saadi, Maouche, Djamel, Ibrir, Miloud, and Bakri, Badis
- Subjects
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MANGANESE oxides , *ELECTRONIC structure , *AB initio quantum chemistry methods , *GROUND state (Quantum mechanics) , *FERROMAGNETISM , *DENSITY of states , *PEROVSKITE - Abstract
We have performed first-principle calculations of the structural, electronic and magnetic properties of cerium manganese oxide (CeMnO) 3 , using full-potential linearized augmented plane-wave (FP-LAPW) scheme within GGA and GGA+ U approaches. Features such as the lattice constant, bulk modulus and its pressure derivative are reported. Also, we have presented our results of the band structure and the density of states. The results show a half-metallic ferromagnetic ground state for CeMnO 3 in GGA+U treatment, whereas semi-metallic ferromagnetic character is observed in GGA. The results obtained, make the cubic CeMnO 3 a candidate material for future spintronic application. [ABSTRACT FROM AUTHOR]
- Published
- 2014
- Full Text
- View/download PDF
299. Exploration and prediction of topological electronic materials based on first-principles calculations.
- Author
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Weng, Hongming, Dai, Xi, and Fang, Zhong
- Subjects
TOPOLOGICAL insulators ,ELECTRONIC materials ,CONDENSED matter physics ,QUANTUM Hall effect ,QUANTUM numbers - Abstract
The class of topological insulator materials is one of the frontier topics of condensed matter physics. The great success of this field is due to the conceptual breakthroughs in theories for topological electronic states and is strongly motivated by the rich variety of material realizations, thus making the theories testable, the experiments operable, and the applications possible. First-principles calculations have demonstrated unprecedented predictive power for material selection and design. In this article, we review recent progress in this field with a focus on the role of first-principles calculations. In particular, we introduce the Wilson loop method for the determination of topological invariants and discuss the band inversion mechanism for the selection of topological materials. Recent progress in quantum anomalous Hall insulators, large-gap quantum spin Hall insulators, and correlated topological insulators is also covered. [ABSTRACT FROM AUTHOR]
- Published
- 2014
- Full Text
- View/download PDF
300. Benchmarking spintronic logic devices based on magnetoelectric oxides.
- Author
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Nikonov, Dmitri E. and Young, Ian A.
- Subjects
SPINTRONICS ,LOGIC devices ,MAGNETOELECTRIC effect ,OXIDES ,SEMICONDUCTORS - Abstract
Active research is ongoing in logic devices beyond complementary metal–oxide–semiconductor electronics. One of the most promising classes of such devices is spintronic/nanomagnetic devices. Switching of magnetization by spin torque (ST) demonstrated in spintronic devices results in relatively high switching energy. An attractive option for lowering switching energy is magnetoelectric (ME) switching achieved by placing other materials (mostly oxides) adjacent to ferromagnets. We review recent experiments on ME switching, classify them according to the ME phenomena into surface anisotropy, exchange bias, and magnetostrictive, and compare switching parameters for these classes. Then, we perform micromagnetic simulations of switching by the effective ME field of both stand-alone nanomagnets and spintronic interconnects. We determine the threshold values of ME field for switching and the resulting switching time. These switching requirements are incorporated into the previously developed benchmarking framework for spintronic logic devices and circuits. We conclude that ME switching results in 1 to 2 orders of magnitude improvement of switching energy and several time improvement of switching delay compared with ST switching across various schemes of spin logic devices. [ABSTRACT FROM PUBLISHER]
- Published
- 2014
- Full Text
- View/download PDF
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