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365 results on '"Sic substrate"'

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151. Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

152. Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

153. Ni, NiSi2 and Si Secondary Ohmic Contacts on SiC with High Thermal Stability

154. Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC

155. Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

156. Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements

157. InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz

158. Very Smooth Ultrananocrystalline Diamond Film Growth by a Novel Pretreatment Technique

159. Oxidation Transitions for SiC Part II. Passive-to-Active Transitions

160. Interfacial Properties of Silicon Nitride Grown on Epitaxial Graphene on 6H-SiC Substrate

161. The Study of SiC Substrate MgB2 thick Films Growing along C Axis

162. Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate

164. Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces

165. Surface morphology and electrical property evolution of super-thin Pt film on 6H-SiC substrate during annealing

166. Influence of the Strain of AlN Buffer Layer on the Strain Evolution of GaN Epilayer Grown on 3-in 6H-SiC Substrate

167. 3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

168. Observations on C-Face SiC Graphene Growth in Argon

169. Hetero-Epitaxial Defects and Optical Characteristics of SiCGe Layers Grown on 6H-SiC Substrate

170. Growth and characteristics of annealed ZnO layer on 6H–SiC substrate

171. AlGaN/GaN/AlGaN double heterojunction HEMTs on n‐type SiC substrates

172. Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

173. Increase of SiC Substrate Resistance Induced by Annealing

174. Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies

175. Studies of interfacial layers between 4H-SiC (0001) and graphene

176. High-Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

178. Effect of composition and joining parameters on microstructure and mechanical properties of silicon carbide joints

179. Surface Passivation Using Silane for Epitaxial Growth of Graphene on SiC substrate

180. Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate

181. Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers

182. STRUCTURAL STUDY ON INTERFACE BETWEEN THICK GALLIUM LAYER AND SiC SUBSTRATE BY X-RAY REFLECTIVITY UNDER TRANSMISSION GEOMETRY

183. Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence

184. Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing

185. Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET

186. Developing graphene based MMICs on SiC substrate

187. Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

188. AlN/GaN HEMT technology with in-situ SiNx passivation

189. Temperature Dependence of Functional Properties of Graphene Hall-Effect Sensors Grown on Si Face and C Face of 4H-SiC Substrate

190. GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

191. High PAE high reliability AlN/GaN double heterostructure

192. Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate

193. High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

194. Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates

195. Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

196. Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

197. SiC Substrate Doping Profiles Using Commercial Optical Scanners

198. Influence of macro defects in SiC substrate on AlGaN/GaN HEMT DC characteristics

199. Impact of III/V ratio on polytype and crystalline quality of AlN grown on 4H‐SiC (11$ \bar 2 $0) substrate by molecular‐beam epitaxy

200. Structure of Co deposited 6H–SiC(0001)

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