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Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces
- Source :
- Advanced Materials Research. 338:530-533
- Publication Year :
- 2011
- Publisher :
- Trans Tech Publications, Ltd., 2011.
-
Abstract
- The nucleation mechanism during the epitaxial graphene films on Si-terminated SiC (0001) surfaces was investigated by atomic force microscopy (AFM) and Raman scattering spectrum. By imaging the change of Si-terminated SiC substrate surfaces, we observed the process of the initial nucleation and the wrinkle formation of graphene. The nucleation of epitaxial graphene phase initiates at 1450°C and the wrinkle formation depends on the thermal decomposition time.
Details
- ISSN :
- 16628985
- Volume :
- 338
- Database :
- OpenAIRE
- Journal :
- Advanced Materials Research
- Accession number :
- edsair.doi...........ce127d7d04d6f169139b970ef5db5b4b
- Full Text :
- https://doi.org/10.4028/www.scientific.net/amr.338.530