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Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces

Authors :
Shao Bo Dun
Qing Bin Liu
Jia Li
Jingjing Wang
Zhi Hong Feng
Source :
Advanced Materials Research. 338:530-533
Publication Year :
2011
Publisher :
Trans Tech Publications, Ltd., 2011.

Abstract

The nucleation mechanism during the epitaxial graphene films on Si-terminated SiC (0001) surfaces was investigated by atomic force microscopy (AFM) and Raman scattering spectrum. By imaging the change of Si-terminated SiC substrate surfaces, we observed the process of the initial nucleation and the wrinkle formation of graphene. The nucleation of epitaxial graphene phase initiates at 1450°C and the wrinkle formation depends on the thermal decomposition time.

Details

ISSN :
16628985
Volume :
338
Database :
OpenAIRE
Journal :
Advanced Materials Research
Accession number :
edsair.doi...........ce127d7d04d6f169139b970ef5db5b4b
Full Text :
https://doi.org/10.4028/www.scientific.net/amr.338.530